DE69937523D1 - Speicherstruktur in ferroelektrischem nichtflüchtigen Speicher und diesbezügliche Auslesemethode - Google Patents

Speicherstruktur in ferroelektrischem nichtflüchtigen Speicher und diesbezügliche Auslesemethode

Info

Publication number
DE69937523D1
DE69937523D1 DE69937523T DE69937523T DE69937523D1 DE 69937523 D1 DE69937523 D1 DE 69937523D1 DE 69937523 T DE69937523 T DE 69937523T DE 69937523 T DE69937523 T DE 69937523T DE 69937523 D1 DE69937523 D1 DE 69937523D1
Authority
DE
Germany
Prior art keywords
memory
readout method
ferroelectric nonvolatile
nonvolatile memory
memory structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937523T
Other languages
English (en)
Inventor
Hiroshi Ishiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Technology Academic Research Center
Original Assignee
Semiconductor Technology Academic Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Technology Academic Research Center filed Critical Semiconductor Technology Academic Research Center
Application granted granted Critical
Publication of DE69937523D1 publication Critical patent/DE69937523D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
DE69937523T 1998-08-28 1999-08-23 Speicherstruktur in ferroelektrischem nichtflüchtigen Speicher und diesbezügliche Auslesemethode Expired - Lifetime DE69937523D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24285698 1998-08-28
JP13851499A JP3239109B2 (ja) 1998-08-28 1999-05-19 強誘電体不揮発性メモリとその読み出し方法

Publications (1)

Publication Number Publication Date
DE69937523D1 true DE69937523D1 (de) 2007-12-27

Family

ID=26471521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937523T Expired - Lifetime DE69937523D1 (de) 1998-08-28 1999-08-23 Speicherstruktur in ferroelektrischem nichtflüchtigen Speicher und diesbezügliche Auslesemethode

Country Status (7)

Country Link
US (2) US6188600B1 (de)
EP (1) EP0982779B1 (de)
JP (1) JP3239109B2 (de)
KR (1) KR100335791B1 (de)
CN (1) CN1220985C (de)
DE (1) DE69937523D1 (de)
TW (1) TW428308B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3390704B2 (ja) 1999-08-26 2003-03-31 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
JP2001358310A (ja) * 2000-06-12 2001-12-26 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2002015588A (ja) * 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその駆動方法
EP1187140A3 (de) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Betriebsverfahren eines Halbleiterspeichers
US6720596B2 (en) 2000-10-17 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for driving the same
JP2002270786A (ja) * 2001-03-09 2002-09-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW571403B (en) * 2001-06-22 2004-01-11 Matsushita Electric Ind Co Ltd Semiconductor device and the driving method
US6574134B1 (en) * 2002-01-18 2003-06-03 Macronix International Co., Ltd. Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability
DE50212506D1 (de) * 2002-02-25 2008-08-28 Infineon Technologies Ag Verfahren zum Auslesen des Inhalts einer Speicherzelle zum Speichern von Daten
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7867851B2 (en) 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
JP2007123528A (ja) * 2005-10-27 2007-05-17 Sanyo Electric Co Ltd メモリ
US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US7589995B2 (en) 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
US8467169B2 (en) 2007-03-22 2013-06-18 Research In Motion Rf, Inc. Capacitors adapted for acoustic resonance cancellation
US7936553B2 (en) * 2007-03-22 2011-05-03 Paratek Microwave, Inc. Capacitors adapted for acoustic resonance cancellation
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
KR101162729B1 (ko) * 2007-07-30 2012-07-05 삼성전자주식회사 전기장센서의 센싱감도향상방법, 전기장 센서를 채용한저장장치, 및 그 정보재생방법
CN101266832B (zh) * 2008-03-31 2010-06-02 清华大学 一种铁电存储器数据读出加速装置及方法
CN101271728B (zh) * 2008-04-22 2011-05-11 清华大学 一种抑制小信号干扰的铁电存储器存储阵列结构
US8194387B2 (en) 2009-03-20 2012-06-05 Paratek Microwave, Inc. Electrostrictive resonance suppression for tunable capacitors
US8958233B2 (en) * 2011-10-18 2015-02-17 Micron Technology, Inc. Stabilization of resistive memory
JP5613188B2 (ja) * 2012-02-13 2014-10-22 株式会社東芝 プログラマブルロジックスイッチ
US8867256B2 (en) * 2012-09-25 2014-10-21 Palo Alto Research Center Incorporated Systems and methods for writing and non-destructively reading ferroelectric memories
US10475738B2 (en) * 2016-12-27 2019-11-12 United Microelectronics Corp. Multi-threshold voltage semiconductor device
US11335391B1 (en) * 2020-10-30 2022-05-17 Ferroelectric Memory Gmbh Memory cell arrangement and method thereof
US11527551B2 (en) * 2020-10-30 2022-12-13 Ferroelectric Memory Gmbh Memory cell arrangements and methods thereof
CN116195378A (zh) * 2020-11-04 2023-05-30 华为技术有限公司 一种铁电存储器及存储设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
JP3021614B2 (ja) 1990-11-06 2000-03-15 オリンパス光学工業株式会社 メモリ素子
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
JPH06119793A (ja) * 1992-10-07 1994-04-28 Matsushita Electric Ind Co Ltd 読み出し専用記憶装置
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
JPH07122661A (ja) * 1993-10-27 1995-05-12 Olympus Optical Co Ltd 強誘電体メモリ装置
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
WO1995026570A1 (fr) * 1994-03-29 1995-10-05 Olympus Optical Co., Ltd. Dispositif a memoire ferro-electrique
JPH08180673A (ja) 1994-12-27 1996-07-12 Nec Corp 強誘電体メモリセル及びそのアクセス装置
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
US6046929A (en) * 1998-04-06 2000-04-04 Fujitsu Limited Memory device with two ferroelectric capacitors per one cell

Also Published As

Publication number Publication date
KR100335791B1 (ko) 2002-05-09
US6362500B2 (en) 2002-03-26
CN1220985C (zh) 2005-09-28
EP0982779A2 (de) 2000-03-01
US6188600B1 (en) 2001-02-13
KR20000017596A (ko) 2000-03-25
EP0982779B1 (de) 2007-11-14
CN1246709A (zh) 2000-03-08
JP3239109B2 (ja) 2001-12-17
US20010000688A1 (en) 2001-05-03
TW428308B (en) 2001-04-01
JP2000138351A (ja) 2000-05-16
EP0982779A3 (de) 2000-05-17

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