DE69828834D1 - Ferroelektrische Speicherzelle und deren Herstellungsverfahren - Google Patents
Ferroelektrische Speicherzelle und deren HerstellungsverfahrenInfo
- Publication number
- DE69828834D1 DE69828834D1 DE69828834T DE69828834T DE69828834D1 DE 69828834 D1 DE69828834 D1 DE 69828834D1 DE 69828834 T DE69828834 T DE 69828834T DE 69828834 T DE69828834 T DE 69828834T DE 69828834 D1 DE69828834 D1 DE 69828834D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- production process
- ferroelectric memory
- ferroelectric
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US905380 | 1992-06-29 | ||
US08/812,579 US5731608A (en) | 1997-03-07 | 1997-03-07 | One transistor ferroelectric memory cell and method of making the same |
US812579 | 1997-03-07 | ||
US834499 | 1997-04-04 | ||
US08/834,499 US6018171A (en) | 1997-03-07 | 1997-04-04 | Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same |
US08/870,375 US6048738A (en) | 1997-03-07 | 1997-06-06 | Method of making ferroelectric memory cell for VLSI RAM array |
US08/869,534 US5942776A (en) | 1997-03-07 | 1997-06-06 | Shallow junction ferroelectric memory cell and method of making the same |
US870375 | 1997-06-06 | ||
US869534 | 1997-06-06 | ||
US08/870,161 US5932904A (en) | 1997-03-07 | 1997-06-06 | Two transistor ferroelectric memory cell |
US08/905,380 US5962884A (en) | 1997-03-07 | 1997-08-04 | Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same |
US870161 | 2001-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69828834D1 true DE69828834D1 (de) | 2005-03-10 |
DE69828834T2 DE69828834T2 (de) | 2006-01-12 |
Family
ID=27560309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69828834T Expired - Lifetime DE69828834T2 (de) | 1997-03-07 | 1998-03-06 | Ferroelektrische Speicherzelle und deren Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0869557B1 (de) |
JP (1) | JP4080050B2 (de) |
KR (1) | KR100288372B1 (de) |
DE (1) | DE69828834T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807416A (zh) * | 2017-05-03 | 2018-11-13 | 格芯公司 | 包括基于埋置铁电材料的储存机制的非易失性晶体管元件 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6011285A (en) * | 1998-01-02 | 2000-01-04 | Sharp Laboratories Of America, Inc. | C-axis oriented thin film ferroelectric transistor memory cell and method of making the same |
US6242771B1 (en) * | 1998-01-02 | 2001-06-05 | Sharp Laboratories Of America, Inc. | Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications |
US6339238B1 (en) | 1998-10-13 | 2002-01-15 | Symetrix Corporation | Ferroelectric field effect transistor, memory utilizing same, and method of operating same |
US6441414B1 (en) | 1998-10-13 | 2002-08-27 | Symetrix Corporation | Ferroelectric field effect transistor, memory utilizing same, and method of operating same |
DE19850852A1 (de) * | 1998-11-04 | 2000-05-11 | Siemens Ag | Ferroelektrischer Transistor und Verfahren zu dessen Herstellung |
US6048740A (en) * | 1998-11-05 | 2000-04-11 | Sharp Laboratories Of America, Inc. | Ferroelectric nonvolatile transistor and method of making same |
US6151241A (en) * | 1999-05-19 | 2000-11-21 | Symetrix Corporation | Ferroelectric memory with disturb protection |
US6495878B1 (en) | 1999-08-02 | 2002-12-17 | Symetrix Corporation | Interlayer oxide containing thin films for high dielectric constant application |
CN1358326A (zh) * | 1999-06-10 | 2002-07-10 | 塞姆特里克斯公司 | 高介电常数的金属氧化物薄膜 |
JP3390704B2 (ja) * | 1999-08-26 | 2003-03-31 | 株式会社半導体理工学研究センター | 強誘電体不揮発性メモリ |
JP2001127265A (ja) * | 1999-10-29 | 2001-05-11 | Matsushita Electronics Industry Corp | 半導体記憶装置およびその駆動方法 |
EP1126525A3 (de) | 2000-02-15 | 2005-10-19 | Matsushita Electric Industrial Co., Ltd. | Halbleiterspeicheranordnung, deren Verfahren zum Treiben, und deren Herstellungsverfahren |
EP1501128A1 (de) * | 2003-07-23 | 2005-01-26 | STMicroelectronics S.r.l. | Dreidimensionale ferroeleektrische Speicherzelle und deren Herstellungsverfahren |
JP2006073939A (ja) | 2004-09-06 | 2006-03-16 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
KR100772024B1 (ko) * | 2006-04-14 | 2007-10-31 | 조선대학교산학협력단 | Cmp를 이용한 fram 제조방법 |
KR100866314B1 (ko) * | 2006-12-13 | 2008-11-03 | 서울시립대학교 산학협력단 | 엠에프엠에스형 전계효과 트랜지스터 및 강유전체 메모리장치 |
KR101559995B1 (ko) * | 2007-10-26 | 2015-10-15 | 서울시립대학교 산학협력단 | 엠에프엠에스형 전계효과 트랜지스터 및 강유전체 메모리 장치와 이들의 제조방법 |
WO2009054707A2 (en) * | 2007-10-26 | 2009-04-30 | University Of Seoul Industry Cooperation Foundation | Mfms-fet, ferroelectric memory device, and methods of manufacturing the same |
KR101418593B1 (ko) * | 2007-11-15 | 2014-07-10 | 서울시립대학교 산학협력단 | 엠에프엠에스형 전계효과 트랜지스터 및 강유전체 메모리장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3089671B2 (ja) * | 1991-02-08 | 2000-09-18 | 日産自動車株式会社 | 半導体記憶装置 |
US5303182A (en) * | 1991-11-08 | 1994-04-12 | Rohm Co., Ltd. | Nonvolatile semiconductor memory utilizing a ferroelectric film |
US5541870A (en) * | 1994-10-28 | 1996-07-30 | Symetrix Corporation | Ferroelectric memory and non-volatile memory cell for same |
JP2982652B2 (ja) * | 1995-04-21 | 1999-11-29 | 日本電気株式会社 | 半導体装置 |
-
1998
- 1998-03-05 JP JP05396898A patent/JP4080050B2/ja not_active Expired - Fee Related
- 1998-03-06 EP EP98301688A patent/EP0869557B1/de not_active Expired - Lifetime
- 1998-03-06 DE DE69828834T patent/DE69828834T2/de not_active Expired - Lifetime
- 1998-03-07 KR KR1019980007591A patent/KR100288372B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807416A (zh) * | 2017-05-03 | 2018-11-13 | 格芯公司 | 包括基于埋置铁电材料的储存机制的非易失性晶体管元件 |
CN108807416B (zh) * | 2017-05-03 | 2023-06-20 | 格芯(美国)集成电路科技有限公司 | 包括基于埋置铁电材料的储存机制的非易失性晶体管元件 |
Also Published As
Publication number | Publication date |
---|---|
JPH10294389A (ja) | 1998-11-04 |
DE69828834T2 (de) | 2006-01-12 |
EP0869557B1 (de) | 2005-02-02 |
EP0869557A3 (de) | 1999-01-07 |
KR100288372B1 (ko) | 2001-06-01 |
EP0869557A2 (de) | 1998-10-07 |
JP4080050B2 (ja) | 2008-04-23 |
KR19980080005A (ko) | 1998-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |