TW428308B - Memory structure in ferroelectric nonvolatile memory and readout method therefor - Google Patents

Memory structure in ferroelectric nonvolatile memory and readout method therefor

Info

Publication number
TW428308B
TW428308B TW088114120A TW88114120A TW428308B TW 428308 B TW428308 B TW 428308B TW 088114120 A TW088114120 A TW 088114120A TW 88114120 A TW88114120 A TW 88114120A TW 428308 B TW428308 B TW 428308B
Authority
TW
Taiwan
Prior art keywords
ferroelectric
ferroelectric capacitors
field effect
effect transistor
voltage pulse
Prior art date
Application number
TW088114120A
Other languages
English (en)
Inventor
Hiroshi Ishiwara
Original Assignee
Semiconductor Tech Acad Res Ct
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Tech Acad Res Ct filed Critical Semiconductor Tech Acad Res Ct
Application granted granted Critical
Publication of TW428308B publication Critical patent/TW428308B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
TW088114120A 1998-08-28 1999-08-18 Memory structure in ferroelectric nonvolatile memory and readout method therefor TW428308B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24285698 1998-08-28
JP13851499A JP3239109B2 (ja) 1998-08-28 1999-05-19 強誘電体不揮発性メモリとその読み出し方法

Publications (1)

Publication Number Publication Date
TW428308B true TW428308B (en) 2001-04-01

Family

ID=26471521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088114120A TW428308B (en) 1998-08-28 1999-08-18 Memory structure in ferroelectric nonvolatile memory and readout method therefor

Country Status (7)

Country Link
US (2) US6188600B1 (zh)
EP (1) EP0982779B1 (zh)
JP (1) JP3239109B2 (zh)
KR (1) KR100335791B1 (zh)
CN (1) CN1220985C (zh)
DE (1) DE69937523D1 (zh)
TW (1) TW428308B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8394699B2 (en) 2006-08-21 2013-03-12 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US8399920B2 (en) 2005-07-08 2013-03-19 Werner Juengling Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US8426273B2 (en) 2005-08-30 2013-04-23 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US8446762B2 (en) 2006-09-07 2013-05-21 Micron Technology, Inc. Methods of making a semiconductor memory device
US8551823B2 (en) 2006-07-17 2013-10-08 Micron Technology, Inc. Methods of forming lines of capacitorless one transistor DRAM cells, methods of patterning substrates, and methods of forming two conductive lines
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

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JP3390704B2 (ja) 1999-08-26 2003-03-31 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
JP2001358310A (ja) * 2000-06-12 2001-12-26 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2002015588A (ja) * 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその駆動方法
EP1187140A3 (en) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
US6720596B2 (en) 2000-10-17 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for driving the same
JP2002270786A (ja) * 2001-03-09 2002-09-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW571403B (en) * 2001-06-22 2004-01-11 Matsushita Electric Ind Co Ltd Semiconductor device and the driving method
US6574134B1 (en) * 2002-01-18 2003-06-03 Macronix International Co., Ltd. Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability
DE50212506D1 (de) * 2002-02-25 2008-08-28 Infineon Technologies Ag Verfahren zum Auslesen des Inhalts einer Speicherzelle zum Speichern von Daten
JP2007123528A (ja) * 2005-10-27 2007-05-17 Sanyo Electric Co Ltd メモリ
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
US7936553B2 (en) 2007-03-22 2011-05-03 Paratek Microwave, Inc. Capacitors adapted for acoustic resonance cancellation
US8467169B2 (en) 2007-03-22 2013-06-18 Research In Motion Rf, Inc. Capacitors adapted for acoustic resonance cancellation
KR101162729B1 (ko) * 2007-07-30 2012-07-05 삼성전자주식회사 전기장센서의 센싱감도향상방법, 전기장 센서를 채용한저장장치, 및 그 정보재생방법
CN101266832B (zh) * 2008-03-31 2010-06-02 清华大学 一种铁电存储器数据读出加速装置及方法
CN101271728B (zh) * 2008-04-22 2011-05-11 清华大学 一种抑制小信号干扰的铁电存储器存储阵列结构
US8194387B2 (en) 2009-03-20 2012-06-05 Paratek Microwave, Inc. Electrostrictive resonance suppression for tunable capacitors
US8958233B2 (en) * 2011-10-18 2015-02-17 Micron Technology, Inc. Stabilization of resistive memory
JP5613188B2 (ja) * 2012-02-13 2014-10-22 株式会社東芝 プログラマブルロジックスイッチ
US8867256B2 (en) * 2012-09-25 2014-10-21 Palo Alto Research Center Incorporated Systems and methods for writing and non-destructively reading ferroelectric memories
US10475738B2 (en) * 2016-12-27 2019-11-12 United Microelectronics Corp. Multi-threshold voltage semiconductor device
US11527551B2 (en) * 2020-10-30 2022-12-13 Ferroelectric Memory Gmbh Memory cell arrangements and methods thereof
US11335391B1 (en) * 2020-10-30 2022-05-17 Ferroelectric Memory Gmbh Memory cell arrangement and method thereof
KR20230093493A (ko) * 2020-11-04 2023-06-27 후아웨이 테크놀러지 컴퍼니 리미티드 강유전체 메모리 및 저장 장치

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* Cited by examiner, † Cited by third party
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JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
JP3021614B2 (ja) 1990-11-06 2000-03-15 オリンパス光学工業株式会社 メモリ素子
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
JPH06119793A (ja) * 1992-10-07 1994-04-28 Matsushita Electric Ind Co Ltd 読み出し専用記憶装置
US5523964A (en) 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
JPH07122661A (ja) 1993-10-27 1995-05-12 Olympus Optical Co Ltd 強誘電体メモリ装置
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
WO1995026570A1 (fr) 1994-03-29 1995-10-05 Olympus Optical Co., Ltd. Dispositif a memoire ferro-electrique
JPH08180673A (ja) * 1994-12-27 1996-07-12 Nec Corp 強誘電体メモリセル及びそのアクセス装置
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
US6046929A (en) * 1998-04-06 2000-04-04 Fujitsu Limited Memory device with two ferroelectric capacitors per one cell

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8399920B2 (en) 2005-07-08 2013-03-19 Werner Juengling Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US8916912B2 (en) 2005-07-08 2014-12-23 Micron Technology, Inc. Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US9536971B2 (en) 2005-07-08 2017-01-03 Micron Technology, Inc. Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
US8426273B2 (en) 2005-08-30 2013-04-23 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US8877589B2 (en) 2005-08-30 2014-11-04 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US8551823B2 (en) 2006-07-17 2013-10-08 Micron Technology, Inc. Methods of forming lines of capacitorless one transistor DRAM cells, methods of patterning substrates, and methods of forming two conductive lines
US9129847B2 (en) 2006-07-17 2015-09-08 Micron Technology, Inc. Transistor structures and integrated circuitry comprising an array of transistor structures
US8394699B2 (en) 2006-08-21 2013-03-12 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US8446762B2 (en) 2006-09-07 2013-05-21 Micron Technology, Inc. Methods of making a semiconductor memory device
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

Also Published As

Publication number Publication date
US6362500B2 (en) 2002-03-26
CN1220985C (zh) 2005-09-28
CN1246709A (zh) 2000-03-08
KR100335791B1 (ko) 2002-05-09
EP0982779A3 (en) 2000-05-17
DE69937523D1 (de) 2007-12-27
EP0982779A2 (en) 2000-03-01
JP2000138351A (ja) 2000-05-16
EP0982779B1 (en) 2007-11-14
US6188600B1 (en) 2001-02-13
KR20000017596A (ko) 2000-03-25
JP3239109B2 (ja) 2001-12-17
US20010000688A1 (en) 2001-05-03

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