DE69925199D1 - Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung - Google Patents

Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung

Info

Publication number
DE69925199D1
DE69925199D1 DE69925199T DE69925199T DE69925199D1 DE 69925199 D1 DE69925199 D1 DE 69925199D1 DE 69925199 T DE69925199 T DE 69925199T DE 69925199 T DE69925199 T DE 69925199T DE 69925199 D1 DE69925199 D1 DE 69925199D1
Authority
DE
Germany
Prior art keywords
composition
polishing
surface treatment
silicon wafers
polishing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69925199T
Other languages
English (en)
Other versions
DE69925199T2 (de
Inventor
Yutaka Inoue
Masatoki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of DE69925199D1 publication Critical patent/DE69925199D1/de
Application granted granted Critical
Publication of DE69925199T2 publication Critical patent/DE69925199T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69925199T 1998-06-22 1999-06-21 Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung Expired - Lifetime DE69925199T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP17465698 1998-06-22
JP17465698 1998-06-22
JP11684899 1999-04-23
JP11684899 1999-04-23
JP16942899A JP3810588B2 (ja) 1998-06-22 1999-06-16 研磨用組成物
JP16942899 1999-06-16

Publications (2)

Publication Number Publication Date
DE69925199D1 true DE69925199D1 (de) 2005-06-16
DE69925199T2 DE69925199T2 (de) 2006-02-23

Family

ID=27313245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69925199T Expired - Lifetime DE69925199T2 (de) 1998-06-22 1999-06-21 Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung

Country Status (6)

Country Link
US (1) US20010003672A1 (de)
EP (1) EP0967260B1 (de)
JP (1) JP3810588B2 (de)
CN (3) CN1265440C (de)
DE (1) DE69925199T2 (de)
MY (1) MY124691A (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447693B1 (en) * 1998-10-21 2002-09-10 W. R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
US6488729B1 (en) 1999-09-30 2002-12-03 Showa Denko K.K. Polishing composition and method
WO2001023485A1 (en) * 1999-09-30 2001-04-05 Showa Denko K. K. Polishing composition and method
JP2004127327A (ja) * 1999-12-27 2004-04-22 Showa Denko Kk 磁気ディスク基板研磨用組成物
US6454820B2 (en) * 2000-02-03 2002-09-24 Kao Corporation Polishing composition
JP3563017B2 (ja) 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法
KR100481651B1 (ko) 2000-08-21 2005-04-08 가부시끼가이샤 도시바 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
KR100396881B1 (ko) * 2000-10-16 2003-09-02 삼성전자주식회사 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법
DE10063488A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Siliciumdioxid-Filmen
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
TW200400554A (en) * 2002-03-04 2004-01-01 Fujimi Inc Polishing composition and method for forming wiring structure
DE60332881D1 (de) * 2002-04-30 2010-07-15 Hitachi Chemical Co Ltd Poliermittel und Polierverfahren
KR100506056B1 (ko) * 2002-06-24 2005-08-05 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 조성물 및 이를 이용한 반도체소자의 형성 방법
US20040108297A1 (en) * 2002-09-18 2004-06-10 Memc Electronic Materials, Inc. Process for etching silicon wafers
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4212861B2 (ja) * 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
CN100440445C (zh) * 2002-11-08 2008-12-03 福吉米株式会社 抛光组合物和清洗组合物
KR100516884B1 (ko) * 2002-12-09 2005-09-23 제일모직주식회사 실리콘 웨이퍼의 최종 연마용 슬러리 조성물
KR100516886B1 (ko) * 2002-12-09 2005-09-23 제일모직주식회사 실리콘 웨이퍼의 최종 연마용 슬러리 조성물
KR100497412B1 (ko) * 2002-12-12 2005-06-28 제일모직주식회사 실리콘 웨이퍼의 최종 연마용 슬러리 조성물
JP2004247428A (ja) * 2003-02-12 2004-09-02 Fujimi Inc 研磨用組成物及びそれを用いる研磨方法
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP4532149B2 (ja) * 2004-03-30 2010-08-25 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
JP2006005246A (ja) * 2004-06-18 2006-01-05 Fujimi Inc リンス用組成物及びそれを用いたリンス方法
DE602005000732T2 (de) * 2004-06-25 2007-12-06 Jsr Corp. Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4808394B2 (ja) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR100645307B1 (ko) 2004-12-31 2006-11-14 제일모직주식회사 실리콘 웨이퍼용 경면 연마 슬러리 조성물
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
JP4918223B2 (ja) * 2005-01-13 2012-04-18 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US8752291B2 (en) 2007-10-11 2014-06-17 Extundo Incorporated Method for marking tubes in a shell and tube heat exchanger
KR101548756B1 (ko) 2008-06-11 2015-08-31 신에쓰 가가꾸 고교 가부시끼가이샤 합성 석영 유리 기판용 연마제
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
KR101485630B1 (ko) 2008-07-11 2015-01-22 니타 하스 인코포레이티드 연마 조성물
DE102008044646B4 (de) * 2008-08-27 2011-06-22 Siltronic AG, 81737 Verfahren zur Herstellung einer Halbleiterscheibe
TWI457423B (zh) * 2008-11-10 2014-10-21 旭硝子股份有限公司 A polishing composition, and a method for manufacturing a semiconductor integrated circuit device
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
KR101719029B1 (ko) * 2010-09-24 2017-03-22 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 린스용 조성물
CN102533117A (zh) * 2010-12-13 2012-07-04 安集微电子（上海）有限公司 一种用于3d封装tsv硅抛光的化学机械抛光液
WO2012099845A2 (en) 2011-01-21 2012-07-26 Cabot Microelectronics Corporation Silicon polishing compositions with improved psd performance
JP2011181948A (ja) * 2011-04-25 2011-09-15 Fujimi Inc 研磨用組成物及びそれを用いた研磨パッドの目詰まり低減方法
JP2013004839A (ja) * 2011-06-20 2013-01-07 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法
MY153723A (en) * 2012-03-22 2015-03-13 Lembaga Getah Malaysia An antistatic rubber compound and antistatic tire
CN102766408B (zh) * 2012-06-28 2014-05-28 深圳市力合材料有限公司 一种适用于低下压力的硅晶片精抛光组合液及其制备方法
CN103865401A (zh) * 2012-12-10 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液的应用
DE102013213839A1 (de) 2013-07-15 2015-01-15 Siltronic Ag Verfahren zur Herstellung einer hochdotierten Halbleiterscheibe
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
JP6255287B2 (ja) * 2014-03-24 2017-12-27 株式会社フジミインコーポレーテッド 研磨方法およびそれに用いられる研磨用組成物
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP6559410B2 (ja) * 2014-09-30 2019-08-14 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016181889A1 (ja) * 2015-05-08 2016-11-17 株式会社フジミインコーポレーテッド 研磨用組成物
JP6387944B2 (ja) * 2015-11-12 2018-09-12 信越半導体株式会社 研磨剤及び研磨方法
CN109401632A (zh) * 2018-11-20 2019-03-01 吴江市格瑞福金属制品有限公司 一种用于铸件的环保型抛光液及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913665B1 (de) * 1965-02-23 1974-04-02
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
JPS6230333A (ja) * 1985-05-20 1987-02-09 ナルコ　ケミカル　カンパニ− シリコンウエ−ハの研磨方法及び組成物
JPS63272460A (ja) * 1987-04-28 1988-11-09 Mitsubishi Monsanto Chem Co ウエハ−用研磨剤組成物
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
JP2877440B2 (ja) * 1989-06-09 1999-03-31 ナルコ ケミカル カンパニー コロイド状シリカ研磨性スラリー
JPH03202269A (ja) * 1989-10-12 1991-09-04 Nalco Chem Co 低ナトリウム低金属シリカ研磨スラリー
JPH0475338A (ja) * 1990-07-18 1992-03-10 Seiko Epson Corp 機械・化学研磨法
JPH04355920A (ja) * 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd 半導体素子形成用基板およびその製造方法
JP3290189B2 (ja) * 1991-04-11 2002-06-10 旭電化工業株式会社 シリコンウェハーの研磨方法
DE69611653T2 (de) * 1995-11-10 2001-05-03 Tokuyama Corp., Tokuya Poliersuspensionen und Verfahren zu ihrer Herstellung
JPH09266145A (ja) * 1996-03-28 1997-10-07 Shin Etsu Handotai Co Ltd シリコンウエーハの製造方法およびシリコンウエーハ
JP3841873B2 (ja) * 1996-04-30 2006-11-08 株式会社フジミインコーポレーテッド 研磨用砥粒及び研磨用組成物
JP3521614B2 (ja) * 1996-05-15 2004-04-19 株式会社神戸製鋼所 シリコン用研磨液組成物
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition

Also Published As

Publication number Publication date
CN1516246A (zh) 2004-07-28
EP0967260B1 (de) 2005-05-11
EP0967260A1 (de) 1999-12-29
JP3810588B2 (ja) 2006-08-16
MY124691A (en) 2006-06-30
CN1285687C (zh) 2006-11-22
CN1240223A (zh) 2000-01-05
JP2001003036A (ja) 2001-01-09
DE69925199T2 (de) 2006-02-23
CN1265440C (zh) 2006-07-19
US20010003672A1 (en) 2001-06-14
CN1515641A (zh) 2004-07-28
CN1129657C (zh) 2003-12-03

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