DE69925199D1 - Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung - Google Patents

Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung

Info

Publication number
DE69925199D1
DE69925199D1 DE69925199T DE69925199T DE69925199D1 DE 69925199 D1 DE69925199 D1 DE 69925199D1 DE 69925199 T DE69925199 T DE 69925199T DE 69925199 T DE69925199 T DE 69925199T DE 69925199 D1 DE69925199 D1 DE 69925199D1
Authority
DE
Germany
Prior art keywords
composition
polishing
surface treatment
silicon wafers
polishing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69925199T
Other languages
English (en)
Other versions
DE69925199T2 (de
Inventor
Yutaka Inoue
Masatoki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of DE69925199D1 publication Critical patent/DE69925199D1/de
Publication of DE69925199T2 publication Critical patent/DE69925199T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
DE69925199T 1998-06-22 1999-06-21 Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung Expired - Lifetime DE69925199T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP17465698 1998-06-22
JP17465698 1998-06-22
JP11684899 1999-04-23
JP11684899 1999-04-23
JP16942899A JP3810588B2 (ja) 1998-06-22 1999-06-16 研磨用組成物
JP16942899 1999-06-16

Publications (2)

Publication Number Publication Date
DE69925199D1 true DE69925199D1 (de) 2005-06-16
DE69925199T2 DE69925199T2 (de) 2006-02-23

Family

ID=27313245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69925199T Expired - Lifetime DE69925199T2 (de) 1998-06-22 1999-06-21 Polierverfahren für Silizium-Wafer unter Verwendung einer Polierzusammensetzung und einer Oberflächenbehandlungszusammensetzung

Country Status (6)

Country Link
US (1) US20010003672A1 (de)
EP (1) EP0967260B1 (de)
JP (1) JP3810588B2 (de)
CN (3) CN1129657C (de)
DE (1) DE69925199T2 (de)
MY (1) MY124691A (de)

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KR100645307B1 (ko) 2004-12-31 2006-11-14 제일모직주식회사 실리콘 웨이퍼용 경면 연마 슬러리 조성물
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
JP4918223B2 (ja) * 2005-01-13 2012-04-18 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
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JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
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CN102533117A (zh) * 2010-12-13 2012-07-04 安集微电子（上海）有限公司 一种用于3d封装tsv硅抛光的化学机械抛光液
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CN102766408B (zh) * 2012-06-28 2014-05-28 深圳市力合材料有限公司 一种适用于低下压力的硅晶片精抛光组合液及其制备方法
CN103865401A (zh) * 2012-12-10 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液的应用
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JP6255287B2 (ja) * 2014-03-24 2017-12-27 株式会社フジミインコーポレーテッド 研磨方法およびそれに用いられる研磨用組成物
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Also Published As

Publication number Publication date
DE69925199T2 (de) 2006-02-23
CN1240223A (zh) 2000-01-05
CN1516246A (zh) 2004-07-28
CN1265440C (zh) 2006-07-19
JP2001003036A (ja) 2001-01-09
EP0967260A1 (de) 1999-12-29
MY124691A (en) 2006-06-30
US20010003672A1 (en) 2001-06-14
CN1129657C (zh) 2003-12-03
EP0967260B1 (de) 2005-05-11
CN1285687C (zh) 2006-11-22
CN1515641A (zh) 2004-07-28
JP3810588B2 (ja) 2006-08-16

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