DE69935822D1 - Einkristalline Siliziumscheibe und Verfahren zu ihrer Herstellung - Google Patents

Einkristalline Siliziumscheibe und Verfahren zu ihrer Herstellung

Info

Publication number
DE69935822D1
DE69935822D1 DE69935822T DE69935822T DE69935822D1 DE 69935822 D1 DE69935822 D1 DE 69935822D1 DE 69935822 T DE69935822 T DE 69935822T DE 69935822 T DE69935822 T DE 69935822T DE 69935822 D1 DE69935822 D1 DE 69935822D1
Authority
DE
Germany
Prior art keywords
production
single crystal
silicon wafer
crystal silicon
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69935822T
Other languages
English (en)
Other versions
DE69935822T2 (de
Inventor
Masahiro Sakurada
Hideki Yamanaka
Tomohiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69935822D1 publication Critical patent/DE69935822D1/de
Publication of DE69935822T2 publication Critical patent/DE69935822T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
DE69935822T 1998-06-11 1999-06-02 Einkristalline Siliziumscheibe und Verfahren zu ihrer Herstellung Expired - Lifetime DE69935822T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17971098A JP3943717B2 (ja) 1998-06-11 1998-06-11 シリコン単結晶ウエーハ及びその製造方法
JP17971098 1998-06-11

Publications (2)

Publication Number Publication Date
DE69935822D1 true DE69935822D1 (de) 2007-05-31
DE69935822T2 DE69935822T2 (de) 2007-12-27

Family

ID=16070529

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935822T Expired - Lifetime DE69935822T2 (de) 1998-06-11 1999-06-02 Einkristalline Siliziumscheibe und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (2) US6190452B1 (de)
EP (1) EP0964082B1 (de)
JP (1) JP3943717B2 (de)
KR (1) KR100582240B1 (de)
DE (1) DE69935822T2 (de)
TW (1) TWI233455B (de)

Families Citing this family (42)

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WO1999010570A1 (fr) * 1997-08-26 1999-03-04 Sumitomo Metal Industries, Ltd. Cristal unique de silicium de grande qualite et procede de fabrication
JP3943717B2 (ja) * 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
TW593798B (en) * 1998-11-20 2004-06-21 Komatsu Denshi Kinzoku Kk Production of silicon single crystal wafer
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
KR100781728B1 (ko) * 2000-01-25 2007-12-03 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 제조조건을 결정하는 방법 및 실리콘 웨이퍼 제조방법
TW588127B (en) * 2000-02-01 2004-05-21 Komatsu Denshi Kinzoku Kk Apparatus for pulling single crystal by CZ method
US6275293B1 (en) * 2000-05-10 2001-08-14 Seh America, Inc. Method for measurement of OSF density
JP2001342097A (ja) * 2000-05-30 2001-12-11 Komatsu Electronic Metals Co Ltd シリコン単結晶引上げ装置及び引上げ方法
JP3570343B2 (ja) * 2000-06-09 2004-09-29 三菱住友シリコン株式会社 単結晶製造方法
JP3624827B2 (ja) * 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
JP4150167B2 (ja) * 2001-02-16 2008-09-17 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
JP2003002785A (ja) * 2001-06-15 2003-01-08 Shin Etsu Handotai Co Ltd 表層部にボイド無欠陥層を有する直径３００ｍｍ以上のシリコン単結晶ウエーハおよびその製造方法
JP2003321297A (ja) * 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶ウェーハ
US7129123B2 (en) * 2002-08-27 2006-10-31 Shin-Etsu Handotai Co., Ltd. SOI wafer and a method for producing an SOI wafer
JP2004153081A (ja) * 2002-10-31 2004-05-27 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法
US6798526B2 (en) * 2002-09-12 2004-09-28 Seh America, Inc. Methods and apparatus for predicting oxygen-induced stacking fault density in wafers
TW200428637A (en) * 2003-01-23 2004-12-16 Shinetsu Handotai Kk SOI wafer and production method thereof
JPWO2004083496A1 (ja) * 2003-02-25 2006-06-22 株式会社Sumco シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
US7112509B2 (en) * 2003-05-09 2006-09-26 Ibis Technology Corporation Method of producing a high resistivity SIMOX silicon substrate
JP4151474B2 (ja) 2003-05-13 2008-09-17 信越半導体株式会社 単結晶の製造方法及び単結晶
JP4193610B2 (ja) * 2003-06-27 2008-12-10 信越半導体株式会社 単結晶の製造方法
JP2005015313A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP2005015312A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP2005162599A (ja) * 2003-12-03 2005-06-23 Siltron Inc 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法
US20050128572A1 (en) * 2003-12-12 2005-06-16 Griggs Jesse B. Jig for microscopic inspection of bulk micro defects in single crystals
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
WO2007007456A1 (ja) * 2005-07-13 2007-01-18 Shin-Etsu Handotai Co., Ltd. 単結晶の製造方法
JP4983161B2 (ja) * 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
KR20080086893A (ko) * 2005-12-27 2008-09-26 신에쓰 가가꾸 고교 가부시끼가이샤 Ｓｏｉ 웨이퍼의 제조 방법 및 ｓｏｉ 웨이퍼
EP2022876A4 (de) 2007-05-30 2010-05-05 Sumco Corp Vorrichtung zum hochziehen von siliciumeinkristallen
US8771415B2 (en) * 2008-10-27 2014-07-08 Sumco Corporation Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer
JP5161169B2 (ja) * 2009-08-06 2013-03-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上げ装置及び引上げ方法
KR101056774B1 (ko) 2010-08-10 2011-08-16 (주)아즈텍 피티씨알을 이용한 챔버의 온도구배 측정 방법
JP5993550B2 (ja) * 2011-03-08 2016-09-14 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
CN102136061B (zh) * 2011-03-09 2013-05-08 中国人民解放军海军航空工程学院 一种矩形石英晶片缺陷自动检测分类识别方法
JP6418085B2 (ja) * 2015-07-03 2018-11-07 株式会社Sumco シリコン単結晶の検査方法および製造方法
CN111781204A (zh) * 2020-06-16 2020-10-16 天津中环领先材料技术有限公司 一种半导体圆硅片环状层错的测试方法
CN112504724A (zh) * 2020-12-10 2021-03-16 北方民族大学 一种蓝宝石晶片c面生长位错密度的检测方法
CN113138195A (zh) * 2021-04-16 2021-07-20 上海新昇半导体科技有限公司 晶体缺陷的监控方法及晶棒生长方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103714B2 (ja) 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP2509477B2 (ja) * 1991-04-20 1996-06-19 コマツ電子金属株式会社 結晶成長方法及び結晶成長装置
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
IT1280041B1 (it) 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH10152395A (ja) * 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US6190631B1 (en) * 1997-04-09 2001-02-20 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
CN1253610C (zh) * 1997-04-09 2006-04-26 Memc电子材料有限公司 低缺陷密度、自间隙原子受控制的硅
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3919308B2 (ja) * 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
JP3943717B2 (ja) * 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP4467096B2 (ja) * 1998-09-14 2010-05-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶製造方法および半導体形成用ウェハ
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法

Also Published As

Publication number Publication date
KR100582240B1 (ko) 2006-05-24
US6482260B2 (en) 2002-11-19
JP3943717B2 (ja) 2007-07-11
US20010000093A1 (en) 2001-04-05
DE69935822T2 (de) 2007-12-27
TWI233455B (en) 2005-06-01
US6190452B1 (en) 2001-02-20
EP0964082A1 (de) 1999-12-15
KR20000006112A (ko) 2000-01-25
EP0964082B1 (de) 2007-04-18
JP2000001391A (ja) 2000-01-07

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