DE69529858D1 - Oberflächenbehandlung für Halbleitersubstrat - Google Patents

Oberflächenbehandlung für Halbleitersubstrat

Info

Publication number
DE69529858D1
DE69529858D1 DE69529858T DE69529858T DE69529858D1 DE 69529858 D1 DE69529858 D1 DE 69529858D1 DE 69529858 T DE69529858 T DE 69529858T DE 69529858 T DE69529858 T DE 69529858T DE 69529858 D1 DE69529858 D1 DE 69529858D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
surface treatment
treatment
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69529858T
Other languages
English (en)
Other versions
DE69529858T2 (de
Inventor
Tetsuo Aoyama
Rieko Nakano
Akira Ishihama
Koichiro Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Sharp Corp
Original Assignee
Mitsubishi Gas Chemical Co Inc
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc, Sharp Corp filed Critical Mitsubishi Gas Chemical Co Inc
Publication of DE69529858D1 publication Critical patent/DE69529858D1/de
Application granted granted Critical
Publication of DE69529858T2 publication Critical patent/DE69529858T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Detergent Compositions (AREA)
DE69529858T 1994-03-28 1995-03-27 Oberflächenbehandlung für Halbleitersubstrat Expired - Lifetime DE69529858T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8251894 1994-03-28
JP06082518A JP3074634B2 (ja) 1994-03-28 1994-03-28 フォトレジスト用剥離液及び配線パターンの形成方法

Publications (2)

Publication Number Publication Date
DE69529858D1 true DE69529858D1 (de) 2003-04-17
DE69529858T2 DE69529858T2 (de) 2004-02-12

Family

ID=13776765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529858T Expired - Lifetime DE69529858T2 (de) 1994-03-28 1995-03-27 Oberflächenbehandlung für Halbleitersubstrat

Country Status (5)

Country Link
US (1) US5630904A (de)
EP (1) EP0680078B1 (de)
JP (1) JP3074634B2 (de)
KR (1) KR100242144B1 (de)
DE (1) DE69529858T2 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3200528B2 (ja) * 1995-01-19 2001-08-20 三菱電機株式会社 ドライエッチングの後処理方法
US5767018A (en) * 1995-11-08 1998-06-16 Advanced Micro Devices, Inc. Method of etching a polysilicon pattern
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5911836A (en) * 1996-02-05 1999-06-15 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
JP3755776B2 (ja) * 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
WO1998022568A1 (en) * 1996-11-22 1998-05-28 Advanced Chemical Systems International, Inc. Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning
JPH10154712A (ja) * 1996-11-25 1998-06-09 Fujitsu Ltd 半導体装置の製造方法
US6140243A (en) * 1996-12-12 2000-10-31 Texas Instruments Incorporated Low temperature process for post-etch defluoridation of metals
JP4386968B2 (ja) * 1996-12-24 2009-12-16 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体基板から残留物をストリッピングするための１，３−ジカルボニル化合物キレート剤を含む処方物
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JP2001508239A (ja) * 1997-01-09 2001-06-19 アドバンスド ケミカル システムズ インターナショナル，インコーポレイテッド 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法
US5882425A (en) * 1997-01-23 1999-03-16 Semitool, Inc. Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching
JPH10223615A (ja) * 1997-02-12 1998-08-21 Nitto Denko Corp レジスト材と側壁保護膜との一括除去方法
SG85093A1 (en) * 1997-03-07 2001-12-19 Chartered Semiconductor Mfg Apparatus and method for polymer removal after metal etching in a plasma reactor
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
US6012469A (en) * 1997-09-17 2000-01-11 Micron Technology, Inc. Etch residue clean
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6593282B1 (en) * 1997-10-21 2003-07-15 Lam Research Corporation Cleaning solutions for semiconductor substrates after polishing of copper film
US6479443B1 (en) 1997-10-21 2002-11-12 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film
US6303551B1 (en) 1997-10-21 2001-10-16 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film
KR19990059076A (ko) * 1997-12-30 1999-07-26 김영환 반도체 소자의 금속 배선 부식 방지 방법
JP3161521B2 (ja) * 1998-03-13 2001-04-25 日本電気株式会社 半導体装置の製造方法および洗浄装置
US6009888A (en) * 1998-05-07 2000-01-04 Chartered Semiconductor Manufacturing Company, Ltd. Photoresist and polymer removal by UV laser aqueous oxidant
US6310020B1 (en) * 1998-11-13 2001-10-30 Kao Corporation Stripping composition for resist
US6627553B1 (en) 1998-11-27 2003-09-30 Showa Denko K.K. Composition for removing side wall and method of removing side wall
AU1410200A (en) * 1998-11-27 2000-06-19 Showa Denko Kabushiki Kaisha Composition for removing sidewall and method of removing sidewall
GB2349984A (en) * 1999-03-04 2000-11-15 Ibm Decontamination of electronic cards from copper salts
US6287972B1 (en) * 1999-03-04 2001-09-11 Philips Semiconductor, Inc. System and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication
US6355576B1 (en) * 1999-04-26 2002-03-12 Vlsi Technology Inc. Method for cleaning integrated circuit bonding pads
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6344432B1 (en) * 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP3410403B2 (ja) 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
US6413923B2 (en) 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6207565B1 (en) * 2000-01-13 2001-03-27 Vlsi Technology, Inc Integrated process for ashing resist and treating silicon after masked spacer etch
US6194326B1 (en) * 2000-04-06 2001-02-27 Micron Technology, In. Low temperature rinse of etching agents
WO2002004233A1 (en) 2000-07-10 2002-01-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6425956B1 (en) * 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
KR100399354B1 (ko) * 2001-08-14 2003-09-26 삼성전자주식회사 금속 배선을 갖는 반도체 소자의 애싱 방법
KR20030046868A (ko) * 2001-12-07 2003-06-18 주식회사 덕성 유기막 제거용 시너
KR100536044B1 (ko) * 2001-12-14 2005-12-12 삼성전자주식회사 신너 조성물 및 이를 사용한 포토레지스트의 스트립핑 방법
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
WO2003091376A1 (en) * 2002-04-24 2003-11-06 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
US7045455B2 (en) * 2003-10-23 2006-05-16 Chartered Semiconductor Manufacturing Ltd. Via electromigration improvement by changing the via bottom geometric profile
US7192910B2 (en) 2003-10-28 2007-03-20 Sachem, Inc. Cleaning solutions and etchants and methods for using same
KR20070007172A (ko) * 2004-03-31 2007-01-12 다다히로 오미 회로 기판, 회로 기판의 제조방법 및 회로 기판을 갖춘표시 장치
KR100604853B1 (ko) * 2004-05-15 2006-07-26 삼성전자주식회사 산화막 제거용 식각액 및 그 제조 방법과 반도체 소자의제조 방법
JP2005347587A (ja) * 2004-06-04 2005-12-15 Sony Corp ドライエッチング後の洗浄液組成物および半導体装置の製造方法
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US7682458B2 (en) 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
KR100690347B1 (ko) * 2005-04-09 2007-03-09 주식회사 엘지화학 박리액 조성물, 이를 이용한 박리 방법 및 그 박리 장치
TWI622639B (zh) * 2005-06-07 2018-05-01 恩特葛瑞斯股份有限公司 金屬及介電相容犠牲抗反射塗層清洗及移除組成物
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
US8021490B2 (en) * 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
KR101771978B1 (ko) 2009-10-20 2017-08-28 코넬 유니버시티 불소 함유 중합체 재료의 패턴형성된 구조를 만드는 방법 및 불소 함유 중합체
JP2012255909A (ja) * 2011-06-09 2012-12-27 Tosoh Corp レジスト剥離剤及びそれを用いた剥離方法
KR20170002933A (ko) 2015-06-30 2017-01-09 동우 화인켐 주식회사 스트리퍼 조성액
CN112310121A (zh) * 2020-10-22 2021-02-02 Tcl华星光电技术有限公司 阵列基板及其制备方法、显示面板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE405886T1 (de) * 1989-06-26 1991-08-14 Hashimoto Chemical Industries Co., Ltd., Sakai, Osaka Oberflaechenbehandlungsmittel fuer praezisionsoberflaechenbehandlung.
JP2906590B2 (ja) * 1990-06-14 1999-06-21 三菱瓦斯化学株式会社 アルミニウム配線半導体基板の表面処理剤
US5244539A (en) * 1992-01-27 1993-09-14 Ardrox, Inc. Composition and method for stripping films from printed circuit boards
JP3048207B2 (ja) * 1992-07-09 2000-06-05 イー．ケー．シー．テクノロジー．インコーポレイテッド 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
US5378312A (en) * 1993-12-07 1995-01-03 International Business Machines Corporation Process for fabricating a semiconductor structure having sidewalls

Also Published As

Publication number Publication date
EP0680078A2 (de) 1995-11-02
JPH07271056A (ja) 1995-10-20
JP3074634B2 (ja) 2000-08-07
EP0680078B1 (de) 2003-03-12
KR100242144B1 (ko) 2000-02-01
DE69529858T2 (de) 2004-02-12
EP0680078A3 (de) 1997-10-22
KR950034568A (ko) 1995-12-28
US5630904A (en) 1997-05-20

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