DE405886T1 - Oberflaechenbehandlungsmittel fuer praezisionsoberflaechenbehandlung. - Google Patents
Oberflaechenbehandlungsmittel fuer praezisionsoberflaechenbehandlung.Info
- Publication number
- DE405886T1 DE405886T1 DE199090306927T DE90306927T DE405886T1 DE 405886 T1 DE405886 T1 DE 405886T1 DE 199090306927 T DE199090306927 T DE 199090306927T DE 90306927 T DE90306927 T DE 90306927T DE 405886 T1 DE405886 T1 DE 405886T1
- Authority
- DE
- Germany
- Prior art keywords
- surface treatment
- precision
- precision surface
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004381 surface treatment Methods 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16323089 | 1989-06-26 | ||
JP1246860A JP2852355B2 (ja) | 1989-06-26 | 1989-09-21 | 微細加工表面処理剤 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE405886T1 true DE405886T1 (de) | 1991-08-14 |
Family
ID=26488740
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69029228T Expired - Lifetime DE69029228T2 (de) | 1989-06-26 | 1990-06-25 | Oberflächenbehandlungsmittel für Präzisionsoberflächenbehandlung |
DE199090306927T Pending DE405886T1 (de) | 1989-06-26 | 1990-06-25 | Oberflaechenbehandlungsmittel fuer praezisionsoberflaechenbehandlung. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69029228T Expired - Lifetime DE69029228T2 (de) | 1989-06-26 | 1990-06-25 | Oberflächenbehandlungsmittel für Präzisionsoberflächenbehandlung |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0405886B1 (de) |
DE (2) | DE69029228T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4101564A1 (de) * | 1991-01-21 | 1992-07-23 | Riedel De Haen Ag | Aetzloesung fuer nasschemische prozesse der halbleiterherstellung |
DE4104881A1 (de) * | 1991-02-18 | 1992-08-20 | Riedel De Haen Ag | Aetzloesung fuer nasschemische prozesse der halbleiterherstellung |
JP3074634B2 (ja) * | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | フォトレジスト用剥離液及び配線パターンの形成方法 |
DE19805525C2 (de) * | 1998-02-11 | 2002-06-13 | Sez Semiconduct Equip Zubehoer | Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen |
DE10221075A1 (de) * | 2002-05-10 | 2003-11-27 | Toepfer Ct Esser Gmbh | Chemische Zusammensetzung zur Oberflächenbehandlung |
JP4799843B2 (ja) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法 |
DE102007006151B4 (de) | 2007-02-07 | 2008-11-06 | Siltronic Ag | Verfahren zur Verringerung und Homogenisierung der Dicke einer Halbleiterschicht, die sich auf der Oberfläche eines elektrisch isolierenden Materials befindet |
KR20180068591A (ko) | 2016-12-14 | 2018-06-22 | 삼성전자주식회사 | 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법 |
CN112151511A (zh) * | 2020-08-17 | 2020-12-29 | 中国科学院微电子研究所 | 一种半导体结构及其制备方法 |
CN114369460B (zh) * | 2021-12-09 | 2023-07-11 | 湖北兴福电子材料股份有限公司 | 一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1621662A1 (de) * | 1966-02-11 | 1971-06-03 | Telefunken Patent | Verfahren zur Reinigung der Oberflaeche eines Halbleiterkoerpers |
US3650960A (en) * | 1969-05-06 | 1972-03-21 | Allied Chem | Etching solutions |
FR2393840A1 (fr) * | 1977-06-06 | 1979-01-05 | Thomson Csf | Solution de gravure des ouvertures de contacts externes pour dispositifs semi-conducteurs |
JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
US4517106A (en) * | 1984-04-26 | 1985-05-14 | Allied Corporation | Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions |
JPS63283028A (ja) * | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
-
1990
- 1990-06-25 DE DE69029228T patent/DE69029228T2/de not_active Expired - Lifetime
- 1990-06-25 EP EP90306927A patent/EP0405886B1/de not_active Expired - Lifetime
- 1990-06-25 DE DE199090306927T patent/DE405886T1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE69029228D1 (de) | 1997-01-09 |
EP0405886A3 (de) | 1991-03-13 |
DE69029228T2 (de) | 1997-06-12 |
EP0405886B1 (de) | 1996-11-27 |
EP0405886A2 (de) | 1991-01-02 |
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