CN114369460B - 一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 - Google Patents
一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 Download PDFInfo
- Publication number
- CN114369460B CN114369460B CN202111501522.6A CN202111501522A CN114369460B CN 114369460 B CN114369460 B CN 114369460B CN 202111501522 A CN202111501522 A CN 202111501522A CN 114369460 B CN114369460 B CN 114369460B
- Authority
- CN
- China
- Prior art keywords
- etching
- silicon dioxide
- etching solution
- concave groove
- groove structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims abstract description 74
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 32
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 32
- 239000003112 inhibitor Substances 0.000 claims abstract description 16
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 3
- 239000012498 ultrapure water Substances 0.000 claims abstract description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- 229920002678 cellulose Polymers 0.000 claims description 6
- 235000010980 cellulose Nutrition 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- -1 polyoxyethylene Polymers 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 239000001913 cellulose Substances 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 4
- 239000000194 fatty acid Substances 0.000 claims description 4
- 229930195729 fatty acid Natural products 0.000 claims description 4
- 150000004665 fatty acids Chemical class 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 claims description 2
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 2
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims description 2
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000002191 fatty alcohols Chemical class 0.000 claims description 2
- 229940100242 glycol stearate Drugs 0.000 claims description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 2
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 2
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 2
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 2
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 2
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 2
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 2
- 229940070765 laurate Drugs 0.000 claims description 2
- 229920000609 methyl cellulose Polymers 0.000 claims description 2
- 239000001923 methylcellulose Substances 0.000 claims description 2
- 235000010981 methylcellulose Nutrition 0.000 claims description 2
- 229940113115 polyethylene glycol 200 Drugs 0.000 claims description 2
- 229940068886 polyethylene glycol 300 Drugs 0.000 claims description 2
- 229940068918 polyethylene glycol 400 Drugs 0.000 claims description 2
- 229940057847 polyethylene glycol 600 Drugs 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 2
- RZRNAYUHWVFMIP-KTKRTIGZSA-N 1-oleoylglycerol Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(O)CO RZRNAYUHWVFMIP-KTKRTIGZSA-N 0.000 claims 1
- 235000013162 Cocos nucifera Nutrition 0.000 claims 1
- 244000060011 Cocos nucifera Species 0.000 claims 1
- BOWVQLFMWHZBEF-KTKRTIGZSA-N oleoyl ethanolamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)NCCO BOWVQLFMWHZBEF-KTKRTIGZSA-N 0.000 claims 1
- 229920000447 polyanionic polymer Polymers 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 26
- 238000002955 isolation Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229940071160 cocoate Drugs 0.000 description 1
- 235000019864 coconut oil Nutrition 0.000 description 1
- 239000003240 coconut oil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
本发明公开了一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，主要成分包括氢氟酸、氟化铵、抑制剂、非离子型表面活性剂和超纯水。本发明的蚀刻液中通过加入抑制剂，提高蚀刻液的粘度，增加传质阻力，降低二氧化硅的蚀刻速率；非离子型表面活性剂则用于降低蚀刻液表面张力，提高浸润性，减小凹型沟槽结构上、中、下层二氧化硅蚀刻速率的差异。本发明所述的蚀刻液能够使凹型沟槽结构的上、中、下层蚀刻速率差异降低，保持上、中、下层的二氧化硅蚀刻速率基本一致。
Description
技术领域
本发明涉及半导体制造工业中一种二氧化硅的蚀刻液，更具体的说涉及一种凹型沟槽结构二氧化硅的蚀刻液。
背景技术
在半导体制造工业中，SiO2的主要作用一是作为掺杂阻挡层，SiO2能够形成阻挡保护层，防止掺杂物(例如硼、磷、砷等)向半导体中扩散；二是作为隔离层，在集成电路中，器件与器件之间的隔离可以有PN结隔离和SiO2介质隔离，SiO2介质隔离比PN结隔离的效果好，它采用一个厚的场氧化层来完成；三是作为缓冲层，但Si3N4直接沉积在Si衬底上时，界面存在较大的应力与极高的界面态密度，因此多采用Si3N4/SiO2/Si结构，可以清除Si3N4和衬底Si之间的应力；四是作为绝缘层，在芯片集成度越来越高的情况下就需要多层金属布线，它们之间需要用绝缘性能良好的介电材料加以隔离，SiO2就能充当这种隔离材料；五是作为保护器件和电路的钝化层，在集成电路芯片制作完成后，为了防止机械性的损伤，或接触含有水汽的环境太久而造成器件失效，通常在IC制造工艺结束后在表面沉积一层钝化层，掺磷的SiO2薄膜常用作这一用途。
SiO2在半导体制造工艺中是一个重要的组成部分，通常通过湿法蚀刻的方式，来获得所需的结构或起到所需的作用。一般SiO2蚀刻使用稀释的HF或HF+NH4F组合物来实现，稀释的HF或HF+NH4F组合物仅能用于处理无结构的SiO2，对于特定结构的SiO2，特别是对于深沟槽的结构，需要蚀刻液的表面张力低，才能有效渗透至深沟槽中SiO2层，进行有效蚀刻。
发明内容
本发明所要解决的技术问题是提供一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，降低凹型沟槽结构的上、中、下层二氧化硅的蚀刻速率差异，保持上、中、下层蚀刻速率基本一致。
本发明涉及一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，所述蚀刻液的组成包括：占蚀刻液总重量1-8％的氢氟酸、16-20％的氟化铵、0.1-5％的抑制剂、0.001-0.1％的非离子型表面活性剂，剩余为超纯水。
进一步地，本发明涉及上述蚀刻液，抑制剂为选自醇类、醇胺类、纤维素类、聚氨酯类中的至少一种。
进一步地，本发明涉及上述蚀刻液中的抑制剂，醇类抑制剂优选乙二醇、丙三醇、环己醇、二乙二醇、三乙二醇、聚乙二醇200、聚乙二醇300、聚乙二醇400、聚乙二醇600；醇胺类抑制剂优选乙醇胺、三乙醇胺、二甘醇胺、异丙醇胺、N-甲基二乙醇胺；纤维素类抑制剂优选甲基纤维素、羟丙基甲基纤维素、羟乙基纤维素、羟丙基纤维素、聚阴离子纤维素；聚氨酯类抑制剂优选水性聚氨酯。
进一步地，本发明涉及上述蚀刻液，非离子型表面活性剂为选自甘油椰油酸酯、椰子油脂肪酸二乙醇酰胺、油酰二乙醇胺、脂肪酸聚氧乙烯酯、聚乙二醇月桂酸酯、聚乙二醇硬脂酸脂、脂肪醇聚氧乙烯醚中的至少一种。
进一步地，本发明涉及上述蚀刻液，所述的氢氟酸起到蚀刻的作用，氟化铵提供氟离子起到稳定蚀刻速率和延长lifetime的作用；抑制剂用于提高蚀刻液的粘度，增加传质阻力，起到降低二氧化硅蚀刻速率的作用；非离子型表面活性剂用于降低蚀刻液表面张力，提高浸润性，减小凹型沟槽结构上、中、下层二氧化硅蚀刻速率的差异。
进一步地，本发明涉及上述蚀刻液，能够使凹型沟槽结构的上、中、下层二氧化硅的蚀刻速率差异降低，保持上、中、下层蚀刻速率基本一致。
本发明的有益效果
本发明的优点和有益效果在于：在本发明中，通过抑制剂和非离子型表面活性剂的协同作用，可以降低二氧化硅的蚀刻速率，且使凹型沟槽结构上、中、下层二氧化硅的蚀刻速率差异减小，基本保持一致，为后续制程提供所需的结构。
附图说明
图1为二氧化硅的凹型沟槽结构图，上层、中层、下层的蚀刻速率验证位点如图所示，蚀刻液从凹型沟槽结构中进入蚀刻。
具体实施方式
下面结合具体实施例，进一步阐述本发明。对本发明做进一步详细的说明，但不限于这些实施例。实施例中使用的蚀刻温度为23℃、蚀刻时间为4min、蚀刻方式为静置浸泡蚀刻。二氧化硅凹型结构wafer的上、中、下层蚀刻差异性使用扫描电子显微镜(SEM)进行结构层图片拍摄，通过剩余上、中、下层二氧化硅层厚度，计算上、中、下层的蚀刻厚度和蚀刻速率。实施例中各组分与含量见表1。
表1为实施例与对比例的组分及含量
实验结果见下表2。
表2凹型结构top、middle、bottom二氧化硅蚀刻速率
由表2的评价结果表明，实施例蚀刻液组合物的表面张力均＜33mN/m，凹型结构的上、中、下二氧化硅层的蚀刻速率差异不明显，上层和下层的
蚀刻速率保持基本一致。
比较例1-6中上层和下层的
比较例1中不含抑制剂和表面活性剂，故蚀刻液表面张力大、蚀刻速率偏快且差异性最大；比较例4-6中分别选择了阳离子表面活性剂、阴离子表面活性剂和两性表面活性剂与非离子表面活性剂进行对比，经验证虽然蚀刻液的表面张力有明显降低，但上、中、下层的蚀刻速率差异并没有减小，不能起到降低蚀刻速率差异的作用。
本发明所述的抑制剂用于提高蚀刻液的粘度，增加传质阻力，起到降低二氧化硅蚀刻速率的作用；非离子型表面活性剂用于降低蚀刻液表面张力，提高浸润性，减小凹型沟槽结构上、中、下层二氧化硅蚀刻速率的差异。
所述的蚀刻液能够使凹型沟槽结构的上、中、下层二氧化硅的蚀刻速率差异降低，保持上、中、下层蚀刻速率基本一致。
显然，上述实施例和比较例仅仅是为了清楚地说明所作的实例，而并非对实施方式的限制。对于所属领域的技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动，这里无需也无法对所有的实施方式予以穷举。而因此所引申的显而易见的变化或变动仍处于本发明创造的保护范围之内。
Claims (4)
1.一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，其特征在于，所述的蚀刻液成分包括占蚀刻液总重量1-8%的氢氟酸、16-20%的氟化铵、0.1-5%的抑制剂、0.001-0.1%的非离子型表面活性剂，剩余为超纯水，所述蚀刻液成分中的抑制剂为纤维素类，纤维素类选自甲基纤维素、羟丙基甲基纤维素、羟乙基纤维素、羟丙基纤维素、聚阴离子纤维素中的至少一种，所述蚀刻液成分中的非离子型表面活性剂选自甘油椰油酸酯、椰子油脂肪酸二乙醇酰胺、油酰二乙醇胺、脂肪酸聚氧乙烯酯、聚乙二醇月桂酸酯、聚乙二醇硬脂酸脂、脂肪醇聚氧乙烯醚中的至少一种。
2.根据权利要求1所述的一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，其特征在于，所述蚀刻液成分中的抑制剂还可以为醇类、聚氨酯类中的至少一种。
3.根据权利要求2所述的一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，其特征在于，所述醇类选自乙二醇、丙三醇、环己醇、二乙二醇、三乙二醇、聚乙二醇200、聚乙二醇300、聚乙二醇400、聚乙二醇600中的至少一种。
4.根据权利要求2所述的一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液，其特征在于，聚氨酯类选自水性聚氨酯。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111501522.6A CN114369460B (zh) | 2021-12-09 | 2021-12-09 | 一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111501522.6A CN114369460B (zh) | 2021-12-09 | 2021-12-09 | 一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114369460A CN114369460A (zh) | 2022-04-19 |
| CN114369460B true CN114369460B (zh) | 2023-07-11 |
Family
ID=81139518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111501522.6A Active CN114369460B (zh) | 2021-12-09 | 2021-12-09 | 一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114369460B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116162460A (zh) * | 2022-12-26 | 2023-05-26 | 湖北兴福电子材料股份有限公司 | 一种防止侵蚀铝的缓冲氧化物蚀刻液 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69029228T2 (de) * | 1989-06-26 | 1997-06-12 | Hashimoto Chemical Ind Co | Oberflächenbehandlungsmittel für Präzisionsoberflächenbehandlung |
| JP4799843B2 (ja) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法 |
| KR100891255B1 (ko) * | 2007-01-05 | 2009-04-01 | 주식회사 하이닉스반도체 | 커패시터의 리닝 방지용 식각액 조성물 및 이를 이용한커패시터 제조 방법 |
| CN101657887B (zh) * | 2007-04-13 | 2012-02-01 | 大金工业株式会社 | 蚀刻液 |
| JP5423788B2 (ja) * | 2009-03-31 | 2014-02-19 | ダイキン工業株式会社 | エッチング液及びその製造方法、並びに該エッチング液を用いたエッチング方法及びエッチング処理物の製造方法 |
| CN102443395B (zh) * | 2010-09-30 | 2016-01-20 | 韩国泰科诺赛美材料株式会社 | 用于湿法蚀刻二氧化硅的组合物 |
| CN103666478B (zh) * | 2013-12-13 | 2015-09-09 | 江阴润玛电子材料股份有限公司 | 一种非离子型低表面张力的酸性氟化铵蚀刻液 |
| CN103756681A (zh) * | 2013-12-31 | 2014-04-30 | 浙江凯圣氟化学有限公司 | 一种boe蚀刻液组合物 |
| CN105845563B (zh) * | 2015-01-14 | 2018-10-19 | 中芯国际集成电路制造(上海)有限公司 | 一种控制氧化硅沟槽底部平坦化的刻蚀方法 |
| CN106854468B (zh) * | 2016-12-01 | 2018-11-20 | 浙江凯圣氟化学有限公司 | 一种硅系多层薄膜用蚀刻液 |
| CN111471463B (zh) * | 2020-04-24 | 2021-10-19 | 湖北兴福电子材料有限公司 | 一种二氧化硅薄膜的蚀刻液 |
| CN112044300B (zh) * | 2020-08-25 | 2022-09-20 | 福建天甫电子材料有限公司 | 一种用于电子级二氧化硅蚀刻液的制备装置及制备工艺 |
| CN112608754B (zh) * | 2020-12-03 | 2021-12-28 | 湖北兴福电子材料有限公司 | 一种高选择性的蚀刻液 |
-
2021
- 2021-12-09 CN CN202111501522.6A patent/CN114369460B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114369460A (zh) | 2022-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100860367B1 (ko) | 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액 | |
| US7491650B2 (en) | Etch compositions and methods of processing a substrate | |
| KR100741250B1 (ko) | 질화 규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법 | |
| CN114369460B (zh) | 一种提高凹型沟槽结构二氧化硅蚀刻均匀性的蚀刻液 | |
| US3909325A (en) | Polycrystalline etch | |
| CN112410036B (zh) | 一种低选择性的bpsg和peteos薄膜的蚀刻液 | |
| CN107316863B (zh) | 瞬态电压抑制器及其制作方法 | |
| US20110306210A1 (en) | Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting | |
| JP2002020787A (ja) | 銅配線半導体基板洗浄剤 | |
| KR20220073813A (ko) | 반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법 | |
| KR101643655B1 (ko) | 실리콘 산화막 식각액 | |
| CN114651317A (zh) | 蚀刻组合物 | |
| KR102443313B1 (ko) | 실란 화합물을 포함하는 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 | |
| US20020175143A1 (en) | Processes for polishing wafers | |
| TW464930B (en) | Cleaning agent for semiconductor device and method of fabricating semiconductor device | |
| KR20180109533A (ko) | 식각액 조성물 | |
| KR101320421B1 (ko) | 식각용액 및 이를 이용한 절연막의 패턴 형성방법 | |
| KR102636997B1 (ko) | 폴리실리콘 식각액 제조용 조성물 및 이를 포함하는 폴리실리콘 식각액 | |
| KR102092352B1 (ko) | 액정 표시 장치용 어레이 기판의 제조방법 | |
| CN115232624B (zh) | 一种用于纳米级氧化硅中间层蚀刻的缓冲氧化物蚀刻液 | |
| KR101057155B1 (ko) | 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액 | |
| KR102397091B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
| US20230151274A1 (en) | Method for selective etching Si in the presence of silicon nitride, its composition and application thereof | |
| KR102678071B1 (ko) | 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법 | |
| KR102629575B1 (ko) | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 443007 no.66-3, Yiting Avenue, Yiting District, Yichang City, Hubei Province Applicant after: Hubei Xingfu Electronic Materials Co.,Ltd. Address before: 443007 no.66-3, Yiting Avenue, Yiting District, Yichang City, Hubei Province Applicant before: HUBEI SINOPHORUS ELECTRONIC MATERIALS CO.,LTD. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |