JP2005347587A - ドライエッチング後の洗浄液組成物および半導体装置の製造方法 - Google Patents
ドライエッチング後の洗浄液組成物および半導体装置の製造方法 Download PDFInfo
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- JP2005347587A JP2005347587A JP2004166571A JP2004166571A JP2005347587A JP 2005347587 A JP2005347587 A JP 2005347587A JP 2004166571 A JP2004166571 A JP 2004166571A JP 2004166571 A JP2004166571 A JP 2004166571A JP 2005347587 A JP2005347587 A JP 2005347587A
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- cleaning liquid
- liquid composition
- dry etching
- etching
- insulating film
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
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Abstract
【解決手段】絶縁膜のパターンエッチングの後処理洗浄に用いられる洗浄液組成物であって、少なくとも1種のフッ素化合物と、グリオキシル酸と、少なくとも1種の有機酸塩と、水とを含有する。フッ素化合物としてはフッ化アンモニウムが用いられる。有機酸塩としてはシュウ酸アンモニウム、酒石酸アンモニウム、クエン酸アンモニウム、および酢酸アンモニウムのうちの少なくとも1つが用いられる。
【選択図】なし
Description
このような組成の洗浄液組成物において、上記フッ素化合物はフッ化アンモニウムであることが好ましい。また、有機酸塩は、シュウ酸アンモニウム、酒石酸アンモニウム、クエン酸アンモニウム、および酢酸アンモニウムのうちの少なくともの1つであることが好ましい。さらに、この洗浄液組成物は、界面活性剤を含有しても良く、有機溶剤を含まないこととする。また、このような本発明のドライエッチング後の洗浄組成物は、銅および銅合金の少なくとも一方からなる配線材料と、低誘電率膜およびプラズマTEOS法によって成膜された酸化シリコンの少なくとも一方からなる層間絶縁膜とが、ドライエッチングによって露出した基板の洗浄に用いられる。
ここで説明するドライエッチング後の洗浄液組成物(以下、単に洗浄液組成物と記す)は、絶縁膜のドライエッチングによるパターン加工の後処理洗浄に好適に用いられる後処理液であり、少なくとも1種のフッ素化合物と、グリオキシル酸と、少なくとも1種の有機酸塩と、水とを含有した水溶液として構成されている。
次に、上述した洗浄液組成物を用いた半導体装置の製造方法の第1実施形態を図面に基づいて詳細に説明する。尚、以下の第1実施形態においては、ダマシンプロセスに本発明の製造方法を適用した実施の形態を説明する。
次に、半導体装置の製造方法の第2実施形態を説明する。尚、本第2実施形態は、第1の実施形態において図1および図2を用いて説明した工程に続けて行われるデュアルダマシンプロセスに本発明の製造方法を適用した実施の形態を説明する。
次に、上述した洗浄液組成物を用いた半導体装置の製造方法の第3実施形態として、半導体基板の表面側に設けられたトランジスタにプラグを接続する工程に本発明を適用した実施の形態を説明する。
各実施例の洗浄液組成物、およびこれらの実施例に対する比較例の洗浄液組成物を用いてドライエッチングの後処理洗浄を行い、ポリマー残渣の除去特性、金属材料の腐食性、絶縁膜のエッチング性について評価した。
洗浄液組成物の酸化シリコン膜に対するエッチング特性を評価した。
洗浄液組成物の低誘電率膜の構造に対する影響を評価した。
洗浄液組成物の低誘電率膜に対するエッチング特性を評価した。
各実施例の洗浄液組成物、およびこれらの実施例に対する比較例の洗浄液組成物を用いて、ドライエッチング後にさらにアッシング処理を行った基板の後処理洗浄を行い、フォトレジスト渣残の除去特性、金属材料の腐食性、絶縁膜のエッチング性について評価した。
Claims (13)
- ドライエッチング後の基板を洗浄する洗浄液組成物であって、
少なくとも1種のフッ素化合物と、グリオキシル酸と、少なくとも1種の有機酸塩と、水とを含有する
ことを特徴とするドライエッチング後の洗浄液組成物。 - 前記フッ素化合物が、フッ化アンモニウムである
ことを特徴とする請求項1記載のドライエッチング後の洗浄液組成物。 - 前記有機酸塩が、シュウ酸アンモニウム、酒石酸アンモニウム、クエン酸アンモニウム、および酢酸アンモニウムのうちの少なくとも1つである
ことを特徴とする請求項1または2に記載のドライエッチング後の洗浄液組成物。 - さらに界面活性剤を含有する
ことを特徴とする請求項1〜3の何れかに記載のドライエッチング後の洗浄液組成物。 - 有機溶剤を含まない
ことを特徴とする請求項1〜4の何れかに記載のドライエッチング後の洗浄液組成物。 - 銅および銅合金の少なくとも一方からなる配線材料と、低誘電率膜およびプラズマTEOS法によって成膜された酸化シリコンの少なくとも一方からなる層間絶縁膜とが、ドライエッチングによって露出した基板の洗浄に用いる
ことを特徴とする請求項1〜5の何れかに記載のドライエッチング後の洗浄液組成物。 - マスクパターン上からのドライエッチングの後にさらにマスクパターンのアッシング除去が施された基板を、請求項1〜6の何れかに記載のドライエッチング後の洗浄液組成物を用いて洗浄する工程を有する
ことを特徴とする半導体装置の製造方法。 - 基板表面に成膜された絶縁膜を、当該絶縁膜上に形成されたマスクパターン上からのドライエッチングによってパターン加工する工程と、
前記パターン加工の後処理として、前記絶縁膜のパターン加工が施された前記基板を、少なくとも1種のフッ素化合物と、グリオキシル酸と、少なくとも1種の有機酸塩と、水とを含有するドライエッチング後の洗浄液組成物を用いて洗浄する工程とを行う
ことを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記絶縁膜は、低誘電率材料を用いて構成されている
ことを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記絶縁膜は、低誘電率膜とその上部の無機材料膜とで構成されている
ことを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記マスクパターンは、無機材料で形成されている
ことを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記絶縁膜のパターン加工によって、当該絶縁膜下の金属材料層を露出させる
ことを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記洗浄工程の後に、前記絶縁膜のパターン加工によって形成された溝パターンの内壁を導電性薄膜で覆い、当該導電性薄膜を介して当該溝パターン内に導電性材料を埋め込む工程を行う
ことを特徴とする半導体装置の製造方法。
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JP2004166571A JP2005347587A (ja) | 2004-06-04 | 2004-06-04 | ドライエッチング後の洗浄液組成物および半導体装置の製造方法 |
TW094117900A TWI407489B (zh) | 2004-06-04 | 2005-05-31 | 乾蝕刻後的洗淨液組成物及半導體裝置之製造方法 |
DE602005000657T DE602005000657T2 (de) | 2004-06-04 | 2005-06-04 | Reinigungsmittel für nach einer Trockenätzung und Verfahren zur Herstellung von einem Halbleitermaterial |
KR1020050048096A KR20060048205A (ko) | 2004-06-04 | 2005-06-04 | 드라이 에칭 후의 세정액조성물 및 반도체 장치의 제조방법 |
EP05012100A EP1602714B1 (en) | 2004-06-04 | 2005-06-04 | Post-dry etching cleaning liquid composition and process for fabricating semiconductor device |
US11/145,731 US20060019201A1 (en) | 2004-06-04 | 2005-06-06 | Post-dry etching cleaning liquid composition and process for fabricating semiconductor device |
CNB2005100755873A CN100529039C (zh) | 2004-06-04 | 2005-06-06 | 干蚀刻后的洗涤液组合物及半导体装置的制造方法 |
US12/075,578 US20080188085A1 (en) | 2004-06-04 | 2008-03-11 | Post-dry etching cleaning liquid composition and process for fabricating semiconductor device |
US12/924,288 US8513140B2 (en) | 2004-06-04 | 2010-09-23 | Post-dry etching cleaning liquid composition and process for fabricating semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
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KR100827435B1 (ko) * | 2006-01-31 | 2008-05-06 | 삼성전자주식회사 | 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법 |
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US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
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CN104795311B (zh) * | 2014-01-21 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
EP3139402B1 (en) * | 2014-05-02 | 2018-08-15 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning liquid and cleaning method |
TWI762681B (zh) * | 2017-07-31 | 2022-05-01 | 日商三菱瓦斯化學股份有限公司 | 抑制鈷、氧化鋁、層間絕緣膜與氮化矽之損傷的組成液及利用此組成液的清洗方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142443A (ja) * | 2001-10-31 | 2003-05-16 | Nippon Zeon Co Ltd | 基板の洗浄方法及びリンス液 |
JP2003280219A (ja) * | 2002-03-22 | 2003-10-02 | Kanto Chem Co Inc | フォトレジスト残渣除去液組成物 |
WO2003083582A1 (en) * | 2002-03-25 | 2003-10-09 | Advanced Technology Materials, Inc. | Ph buffered compositions for cleaning semiconductor substrates |
JP2003313594A (ja) * | 2002-04-22 | 2003-11-06 | Nec Corp | 洗浄液および半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3074634B2 (ja) * | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | フォトレジスト用剥離液及び配線パターンの形成方法 |
JP3436221B2 (ja) * | 1999-03-15 | 2003-08-11 | ソニー株式会社 | 半導体装置の製造方法 |
US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
JP3787085B2 (ja) * | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
JP4221191B2 (ja) * | 2002-05-16 | 2009-02-12 | 関東化学株式会社 | Cmp後洗浄液組成物 |
JP4443864B2 (ja) * | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
KR20040041019A (ko) * | 2002-11-08 | 2004-05-13 | 스미또모 가가꾸 고오교오 가부시끼가이샤 | 반도체 기판용 세정액 |
JP2004342632A (ja) * | 2003-05-13 | 2004-12-02 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100536378B1 (ko) | 2003-11-19 | 2005-12-12 | 기아자동차주식회사 | 차량 전복 방지를 위한 이씨에스 장치의 동작 방법 |
-
2004
- 2004-06-04 JP JP2004166571A patent/JP2005347587A/ja active Pending
-
2005
- 2005-05-31 TW TW094117900A patent/TWI407489B/zh not_active IP Right Cessation
- 2005-06-04 EP EP05012100A patent/EP1602714B1/en not_active Expired - Fee Related
- 2005-06-04 DE DE602005000657T patent/DE602005000657T2/de active Active
- 2005-06-04 KR KR1020050048096A patent/KR20060048205A/ko active IP Right Grant
- 2005-06-06 US US11/145,731 patent/US20060019201A1/en not_active Abandoned
- 2005-06-06 CN CNB2005100755873A patent/CN100529039C/zh not_active Expired - Fee Related
-
2008
- 2008-03-11 US US12/075,578 patent/US20080188085A1/en not_active Abandoned
-
2010
- 2010-09-23 US US12/924,288 patent/US8513140B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142443A (ja) * | 2001-10-31 | 2003-05-16 | Nippon Zeon Co Ltd | 基板の洗浄方法及びリンス液 |
JP2003280219A (ja) * | 2002-03-22 | 2003-10-02 | Kanto Chem Co Inc | フォトレジスト残渣除去液組成物 |
WO2003083582A1 (en) * | 2002-03-25 | 2003-10-09 | Advanced Technology Materials, Inc. | Ph buffered compositions for cleaning semiconductor substrates |
JP2003313594A (ja) * | 2002-04-22 | 2003-11-06 | Nec Corp | 洗浄液および半導体装置の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8759268B2 (en) | 2006-08-24 | 2014-06-24 | Daikin Industries, Ltd. | Solution for removing residue after semiconductor dry process and method of removing the residue using the same |
KR100963374B1 (ko) | 2007-01-11 | 2010-06-14 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 반도체 기판용 세정 조성물 |
US8747564B2 (en) | 2008-08-25 | 2014-06-10 | Daikin Industries, Ltd. | Solution for removal of residue after semiconductor dry process and residue removal method using same |
JP2011124296A (ja) * | 2009-12-09 | 2011-06-23 | Showa Denko Kk | 半導体発光素子の製造方法 |
Also Published As
Publication number | Publication date |
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DE602005000657D1 (de) | 2007-04-19 |
TWI407489B (zh) | 2013-09-01 |
US20060019201A1 (en) | 2006-01-26 |
EP1602714B1 (en) | 2007-03-07 |
CN100529039C (zh) | 2009-08-19 |
US20110014793A1 (en) | 2011-01-20 |
US20080188085A1 (en) | 2008-08-07 |
DE602005000657T2 (de) | 2007-11-29 |
US8513140B2 (en) | 2013-08-20 |
KR20060048205A (ko) | 2006-05-18 |
CN1706925A (zh) | 2005-12-14 |
EP1602714A1 (en) | 2005-12-07 |
TW200603262A (en) | 2006-01-16 |
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