US20060019201A1 - Post-dry etching cleaning liquid composition and process for fabricating semiconductor device - Google Patents

Post-dry etching cleaning liquid composition and process for fabricating semiconductor device Download PDF

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Publication number
US20060019201A1
US20060019201A1 US11/145,731 US14573105A US2006019201A1 US 20060019201 A1 US20060019201 A1 US 20060019201A1 US 14573105 A US14573105 A US 14573105A US 2006019201 A1 US2006019201 A1 US 2006019201A1
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US
United States
Prior art keywords
dry etching
cleaning liquid
liquid composition
cleaning
post
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/145,731
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English (en)
Inventor
Masafumi Muramatsu
Kazumi Asada
Yukino Hagino
Atsushi Okuyama
Takahito Nakajima
Kazuhiko Takase
Yoshihiro Uozumi
Tsuyoshi Matsumura
Takuo Ohwada
Norio Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Kanto Chemical Co Inc
Sony Corp
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to KANTO KAGAKU KABUSHIKI KAISHI, SONY CORPORATION, TOSHIBA COPORATION KABUSHIKI KAISHA TOSHIBA reassignment KANTO KAGAKU KABUSHIKI KAISHI ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKASE, KAZUHIKO, MATSUMURA, TSUYOSHI, UOZUMI, YOSHIHIRO, NAKAJIMA, TAKAHITO, HAGINO, YUKINO, ASADA, KAZUMI, ISHIKAWA, NORIO, OHWADA, TAKUO, MURAMATSU, MASAFUMI, OKUYAMA, ATSUSHI
Publication of US20060019201A1 publication Critical patent/US20060019201A1/en
Assigned to KANTO KAGAKU KABUSHIKI KAISHA, SONY CORPORATION, KABUSHIKI KAISHA TOSHIBA reassignment KANTO KAGAKU KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OKUYAMA, ATSUSHI, MATSUMURA, TSUYOSHI, UOZUMI, YOSHIHIRO, HAGINO, YUKINO, NAKAJIMA, TAKAHITO, OHWADA, TAKUO, ISHIKAWA, NORIO, TAKASE, KAZUHIKO, ASADA, KAZUMI, MURAMATSU, MASAFUMI
Priority to US12/075,578 priority Critical patent/US20080188085A1/en
Priority to US12/924,288 priority patent/US8513140B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks

Definitions

  • copper and an alloy having copper as a main component have been used as new wiring materials for the purpose of reducing wiring resistance and inter-wiring capacitance.
  • Copper wiring is formed by, for example, a damascene process in which, after copper is embedded using sputtering or electro-plating in a trench formed as a wiring pattern in an interlayer insulating film, an unwanted copper film portion is removed using chemical mechanical polishing (CMP), etc.
  • CMP chemical mechanical polishing
  • the copper alloy there are examples in which it is used for wiring by a process analogous to the damascene process.
  • a liquid containing an aliphatic polycarboxylic acid, a reducing material such as glyoxylic acid, and water has been disclosed by the present inventors.
  • the aliphatic polycarboxylic acid is oxalic acid, malonic acid, tartaric acid, malic acid, succinic acid, or citric acid
  • the reducing material is glyoxylic acid, ascorbic acid, glucose, or mannose (ref. JP, A, 2003-167360).
  • a post-etching treatment can be carried out that is capable of removing the residue from the etched surface while maintaining the shape resulting from the etching process. Furthermore, forming the composition as an aqueous solution without using any organic solvent enables the burden on the environment to be reduced.
  • FIG. 10 is a graph showing the etching rate for a silicon oxide film by each constitution of cleaning liquid composition.
  • the above-mentioned cleaning liquid composition may contain a resist removal component.
  • the resist removal component include TMAH (tetramethylammonium hydroxide) and MEA (monomethanolamine). This can give an effect in removing the resist residue in particular.
  • a barrier layer 21 is formed from TaN, etc. on the entire surface above the semiconductor substrate 1 by, for example, a sputtering method as a conductive thin film for the purpose of preventing wiring metal from diffusing.
  • a Cu thin film for plating is formed, and a conductive material 23 such as copper (Cu) is deposited within the wiring trench 19 by a plating method, thus filling in the wiring trench 19 .
  • the first inorganic mask 41 a , the cap insulating film 39 , and the low dielectric constant insulating film 37 are dry etched through the second inorganic mask 43 a to which the wiring trench pattern has been transferred, and the etching is stopped at the stopper layer 35 .
  • a wiring trench (trench pattern) 53 is formed.
  • the stopper layer 35 and the low dielectric constant film 33 at the base of the aperture 51 are dry etched, and the etching is first stopped at the surface of the stopper layer 31 . By so doing, the aperture 51 is further dug down into while being connected to the wiring trench 53 .
  • This cleaning liquid composition is an aqueous solution comprising a fluorine compound, glyoxylic acid, and an organic acid salt as described above, and post cleaning by use of this cleaning liquid composition enables the resist residue B to be removed sufficiently without corroding a silicide (source/drain plug 87 ), which is a metal material exposed on the etching surface. Moreover, since etching of the interlayer insulating film 77 is suppressed, an etched side wall is prevented from retreating. It is therefore possible to maintain the etched shape formed by dry etching as it is.
  • the third embodiment describes an arrangement in which the cleaning liquid composition of the present invention is used for a cleaning posttreatment in the formation by dry etching of the via hole 81 extending to the source/drain 75 , which is covered by the silicide.
  • the cleaning liquid composition of the present invention is used for a cleaning posttreatment in the formation by dry etching of the via hole 81 extending to the source/drain 75 , which is covered by the silicide.
  • the cleaning liquid composition of the present invention even when the surface of the source/drain 75 is not the silicide but is a semiconductor layer, by carrying out a cleaning posttreatment using the cleaning liquid composition of the present invention, it is possible to reliably remove the resist residue B. Because of this, it is possible to reliably connect the plug 87 and the source/drain 75 while maintaining the etched shape with good precision.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
US11/145,731 2004-06-04 2005-06-06 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device Abandoned US20060019201A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/075,578 US20080188085A1 (en) 2004-06-04 2008-03-11 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device
US12/924,288 US8513140B2 (en) 2004-06-04 2010-09-23 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-166571 2004-06-04
JP2004166571A JP2005347587A (ja) 2004-06-04 2004-06-04 ドライエッチング後の洗浄液組成物および半導体装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/075,578 Division US20080188085A1 (en) 2004-06-04 2008-03-11 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device
US12/924,288 Division US8513140B2 (en) 2004-06-04 2010-09-23 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

Publications (1)

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US20060019201A1 true US20060019201A1 (en) 2006-01-26

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US11/145,731 Abandoned US20060019201A1 (en) 2004-06-04 2005-06-06 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device
US12/075,578 Abandoned US20080188085A1 (en) 2004-06-04 2008-03-11 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device
US12/924,288 Active 2025-07-02 US8513140B2 (en) 2004-06-04 2010-09-23 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

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Application Number Title Priority Date Filing Date
US12/075,578 Abandoned US20080188085A1 (en) 2004-06-04 2008-03-11 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device
US12/924,288 Active 2025-07-02 US8513140B2 (en) 2004-06-04 2010-09-23 Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

Country Status (7)

Country Link
US (3) US20060019201A1 (ja)
EP (1) EP1602714B1 (ja)
JP (1) JP2005347587A (ja)
KR (1) KR20060048205A (ja)
CN (1) CN100529039C (ja)
DE (1) DE602005000657T2 (ja)
TW (1) TWI407489B (ja)

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US20050288199A1 (en) * 2004-06-29 2005-12-29 Kanto Kagaku Kabushiki Kaisha Composition for removing photoresist residue and polymer residue
US20060030158A1 (en) * 2002-01-22 2006-02-09 Cabot Microelectronics Compositions and methods for tantalum CMP
US20070178637A1 (en) * 2006-01-31 2007-08-02 Samsung Electronics Co., Ltd. Method of fabricating gate of semiconductor device using oxygen-free ashing process
US20080188084A1 (en) * 2007-02-07 2008-08-07 Siltronic Ag Method For Reducing And Homogenizing The Thickness Of A Semiconductor Layer Which Lies On The Surface Of An Electrically Insulating Material
WO2008144501A3 (en) * 2007-05-17 2009-03-05 Advanced Materials Technology New antioxidants for post-cmp cleaning formulations
US20090117736A1 (en) * 2007-11-01 2009-05-07 Applied Materials, Inc. Ammonia-based plasma treatment for metal fill in narrow features
US20090239777A1 (en) * 2006-09-21 2009-09-24 Advanced Technology Materials, Inc. Antioxidants for post-cmp cleaning formulations
US20090239369A1 (en) * 2008-03-19 2009-09-24 Samsung Electronics Co., Ltd. Method of Forming Electrical Interconnects within Insulating Layers that Form Consecutive Sidewalls
US20110143547A1 (en) * 2008-08-25 2011-06-16 Daikin Industries, Ltd. Solution for removal of residue after semiconductor dry process and residue removal method using same
US20110214688A1 (en) * 2010-03-05 2011-09-08 Lam Research Corporation Cleaning solution for sidewall polymer of damascene processes
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations

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JPWO2007111126A1 (ja) * 2006-03-27 2009-08-13 東京エレクトロン株式会社 基板処理方法、半導体装置の製造方法、基板処理装置、および記録媒体
US8759268B2 (en) 2006-08-24 2014-06-24 Daikin Industries, Ltd. Solution for removing residue after semiconductor dry process and method of removing the residue using the same
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
US8822396B2 (en) 2007-08-22 2014-09-02 Daikin Industries, Ltd. Solution for removing residue after semiconductor dry process and method of removing the residue using the same
JP5573138B2 (ja) * 2009-12-09 2014-08-20 豊田合成株式会社 半導体発光素子の製造方法
KR20130101193A (ko) * 2012-03-05 2013-09-13 삼성디스플레이 주식회사 패널의 세정장치 및 세정방법
US9012322B2 (en) * 2013-04-05 2015-04-21 Intermolecular, Inc. Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
CN104795311B (zh) 2014-01-21 2018-06-01 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
EP3139402B1 (en) * 2014-05-02 2018-08-15 Mitsubishi Gas Chemical Company, Inc. Semiconductor element cleaning liquid and cleaning method
JP7322704B2 (ja) * 2017-07-31 2023-08-08 三菱瓦斯化学株式会社 コバルト、アルミナ、層間絶縁膜、窒化シリコンのダメージを抑制した組成液及びこれを用いた洗浄方法

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US7563754B2 (en) * 2004-06-29 2009-07-21 Kanto Kagaku Kabushiki Kaisha Composition for removing photoresist residue and polymer residue
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US20080188085A1 (en) 2008-08-07
JP2005347587A (ja) 2005-12-15
TWI407489B (zh) 2013-09-01
CN100529039C (zh) 2009-08-19
US20110014793A1 (en) 2011-01-20
DE602005000657D1 (de) 2007-04-19
EP1602714B1 (en) 2007-03-07
KR20060048205A (ko) 2006-05-18
TW200603262A (en) 2006-01-16
EP1602714A1 (en) 2005-12-07
US8513140B2 (en) 2013-08-20
DE602005000657T2 (de) 2007-11-29
CN1706925A (zh) 2005-12-14

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