DE69827824D1 - Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung - Google Patents

Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung

Info

Publication number
DE69827824D1
DE69827824D1 DE69827824T DE69827824T DE69827824D1 DE 69827824 D1 DE69827824 D1 DE 69827824D1 DE 69827824 T DE69827824 T DE 69827824T DE 69827824 T DE69827824 T DE 69827824T DE 69827824 D1 DE69827824 D1 DE 69827824D1
Authority
DE
Germany
Prior art keywords
layer
substrate
structure including
semiconductor structure
graded region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69827824T
Other languages
English (en)
Other versions
DE69827824T2 (de
DE69827824T3 (de
Inventor
A Fitzgerald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26728449&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69827824(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of DE69827824D1 publication Critical patent/DE69827824D1/de
Publication of DE69827824T2 publication Critical patent/DE69827824T2/de
Application granted granted Critical
Publication of DE69827824T3 publication Critical patent/DE69827824T3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Magnetic Record Carriers (AREA)
  • Gears, Cams (AREA)
DE69827824T 1997-06-24 1998-06-23 Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung Expired - Fee Related DE69827824T3 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5060297P 1997-06-24 1997-06-24
US50602P 1997-06-24
US5976597P 1997-09-16 1997-09-16
US59765P 1997-09-16
PCT/US1998/013076 WO1998059365A1 (en) 1997-06-24 1998-06-23 CONTROLLING THREADING DISLOCATION DENSITIES IN Ge ON Si USING GRADED GeSi LAYERS AND PLANARIZATION

Publications (3)

Publication Number Publication Date
DE69827824D1 true DE69827824D1 (de) 2004-12-30
DE69827824T2 DE69827824T2 (de) 2005-11-24
DE69827824T3 DE69827824T3 (de) 2009-09-03

Family

ID=26728449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69827824T Expired - Fee Related DE69827824T3 (de) 1997-06-24 1998-06-23 Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung

Country Status (8)

Country Link
US (5) US6107653A (de)
EP (1) EP1016129B2 (de)
JP (1) JP3535527B2 (de)
KR (1) KR100400808B1 (de)
AT (1) ATE283549T1 (de)
CA (1) CA2295069A1 (de)
DE (1) DE69827824T3 (de)
WO (1) WO1998059365A1 (de)

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US6876010B1 (en) 2005-04-05
US7081410B2 (en) 2006-07-25
JP2000513507A (ja) 2000-10-10
CA2295069A1 (en) 1998-12-30
US6291321B1 (en) 2001-09-18
KR100400808B1 (ko) 2003-10-08
EP1016129B1 (de) 2004-11-24
US6107653A (en) 2000-08-22
KR20010014201A (ko) 2001-02-26
US7250359B2 (en) 2007-07-31
US20040262631A1 (en) 2004-12-30
EP1016129B2 (de) 2009-06-10
US20020084000A1 (en) 2002-07-04
ATE283549T1 (de) 2004-12-15
DE69827824T3 (de) 2009-09-03
JP3535527B2 (ja) 2004-06-07
EP1016129A1 (de) 2000-07-05
WO1998059365A1 (en) 1998-12-30

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