CN1172376C - 一种类似绝缘层上硅结构的材料及制备方法 - Google Patents
一种类似绝缘层上硅结构的材料及制备方法 Download PDFInfo
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- CN1172376C CN1172376C CNB011392886A CN01139288A CN1172376C CN 1172376 C CN1172376 C CN 1172376C CN B011392886 A CNB011392886 A CN B011392886A CN 01139288 A CN01139288 A CN 01139288A CN 1172376 C CN1172376 C CN 1172376C
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- 239000000463 material Substances 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000002955 isolation Methods 0.000 title abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000005468 ion implantation Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 6
- 150000001768 cations Chemical class 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 12
- 238000004377 microelectronic Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011392886A CN1172376C (zh) | 2001-12-29 | 2001-12-29 | 一种类似绝缘层上硅结构的材料及制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011392886A CN1172376C (zh) | 2001-12-29 | 2001-12-29 | 一种类似绝缘层上硅结构的材料及制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1359158A CN1359158A (zh) | 2002-07-17 |
CN1172376C true CN1172376C (zh) | 2004-10-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB011392886A Expired - Lifetime CN1172376C (zh) | 2001-12-29 | 2001-12-29 | 一种类似绝缘层上硅结构的材料及制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1172376C (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100397575C (zh) * | 2003-10-30 | 2008-06-25 | 台湾积体电路制造股份有限公司 | 具有应变的多层结构及具有应变层的场效应晶体管的制法 |
CN100397574C (zh) * | 2003-10-30 | 2008-06-25 | 台湾积体电路制造股份有限公司 | 具有应变的多层结构及具有应变层的场效应晶体管的制法 |
US7416957B2 (en) * | 2003-12-16 | 2008-08-26 | Nxp B.V. | Method for forming a strained Si-channel in a MOSFET structure |
US7217949B2 (en) | 2004-07-01 | 2007-05-15 | International Business Machines Corporation | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) |
CN1317739C (zh) * | 2004-11-23 | 2007-05-23 | 中国电子科技集团公司第二十四研究所 | 在具有图形的绝缘硅基衬底上制作硅薄膜的方法 |
CN100345248C (zh) * | 2005-05-11 | 2007-10-24 | 华东师范大学 | 异质键合晶片的制备方法和应用 |
FR2890489B1 (fr) * | 2005-09-08 | 2008-03-07 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant |
CN100345251C (zh) * | 2005-10-11 | 2007-10-24 | 中国电子科技集团公司第二十四研究所 | 在具有深槽图形的硅基衬底上制作硅薄膜的方法 |
JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
CN101916741B (zh) * | 2010-07-09 | 2011-12-14 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘体上应变硅制备方法 |
CN107195534B (zh) * | 2017-05-24 | 2021-04-13 | 中国科学院上海微系统与信息技术研究所 | Ge复合衬底、衬底外延结构及其制备方法 |
CN108878263B (zh) * | 2018-06-25 | 2022-03-18 | 中国科学院微电子研究所 | 半导体结构与其制作方法 |
US10998376B2 (en) * | 2019-01-29 | 2021-05-04 | International Business Machines Corporation | Qubit-optical-CMOS integration using structured substrates |
-
2001
- 2001-12-29 CN CNB011392886A patent/CN1172376C/zh not_active Expired - Lifetime
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Publication number | Publication date |
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CN1359158A (zh) | 2002-07-17 |
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Owner name: PROUD OF THE NEW SHANGHAI TECHNOLOGY CO. Free format text: FORMER OWNER: SHANGHAI INST. OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCI Effective date: 20080404 |
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Effective date of registration: 20080404 Address after: No. 200, Pratt & Whitney Road, Shanghai, Jiading District Patentee after: Shanghai Xin'ao Science and Technology Co., Ltd. Address before: No. 865, Changning Road, Shanghai, Changning District Patentee before: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
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Owner name: SHANGHAI SIMGUI SCIENCE AND TECHNOLOGY CO., LTD. Free format text: FORMER NAME: PROUD OF THE NEW SHANGHAI TECHNOLOGY CO. |
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Address after: 201821 Shanghai, Jiading District Pratt & Whitney Road, No. 200 Patentee after: Shanghai Simgui Technology Co., Ltd. Address before: 201821 Shanghai, Jiading District Pratt & Whitney Road, No. 200 Patentee before: Shanghai Xin'ao Science and Technology Co., Ltd. |
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