CN1531751A - 采用回蚀工艺的低缺陷SiGe的层移植 - Google Patents
采用回蚀工艺的低缺陷SiGe的层移植 Download PDFInfo
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- CN1531751A CN1531751A CNA018176550A CN01817655A CN1531751A CN 1531751 A CN1531751 A CN 1531751A CN A018176550 A CNA018176550 A CN A018176550A CN 01817655 A CN01817655 A CN 01817655A CN 1531751 A CN1531751 A CN 1531751A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (42)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/692,606 US6890835B1 (en) | 2000-10-19 | 2000-10-19 | Layer transfer of low defect SiGe using an etch-back process |
US09/692,606 | 2000-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1531751A true CN1531751A (zh) | 2004-09-22 |
CN100472748C CN100472748C (zh) | 2009-03-25 |
Family
ID=24781275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018176550A Expired - Fee Related CN100472748C (zh) | 2000-10-19 | 2001-09-17 | 采用回蚀工艺的低缺陷SiGe的层移植 |
Country Status (9)
Country | Link |
---|---|
US (4) | US6890835B1 (zh) |
EP (1) | EP1327263A1 (zh) |
JP (1) | JP2004512683A (zh) |
KR (1) | KR100613182B1 (zh) |
CN (1) | CN100472748C (zh) |
AU (1) | AU2001287881A1 (zh) |
IL (2) | IL155395A0 (zh) |
TW (1) | TW521395B (zh) |
WO (1) | WO2002033746A1 (zh) |
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CN107302037A (zh) * | 2017-06-12 | 2017-10-27 | 北京工业大学 | 基区Ge组分分段分布的SiGe/Si异质结光敏晶体管探测器 |
CN108878263A (zh) * | 2018-06-25 | 2018-11-23 | 中国科学院微电子研究所 | 半导体结构与其制作方法 |
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US7157119B2 (en) * | 2002-06-25 | 2007-01-02 | Ppg Industries Ohio, Inc. | Method and compositions for applying multiple overlying organic pigmented decorations on ceramic substrates |
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2001
- 2001-09-17 EP EP01967506A patent/EP1327263A1/en not_active Withdrawn
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- 2001-09-17 JP JP2002537047A patent/JP2004512683A/ja not_active Withdrawn
- 2001-09-17 AU AU2001287881A patent/AU2001287881A1/en not_active Abandoned
- 2001-09-17 KR KR1020037005157A patent/KR100613182B1/ko not_active IP Right Cessation
- 2001-09-17 CN CNB018176550A patent/CN100472748C/zh not_active Expired - Fee Related
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- 2001-10-16 TW TW090125554A patent/TW521395B/zh not_active IP Right Cessation
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2003
- 2003-04-11 IL IL155395A patent/IL155395A/en not_active IP Right Cessation
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2004
- 2004-09-23 US US10/948,421 patent/US7427773B2/en not_active Expired - Fee Related
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2008
- 2008-07-29 US US12/181,613 patent/US7786468B2/en not_active Expired - Fee Related
- 2008-07-29 US US12/181,489 patent/US20090026495A1/en not_active Abandoned
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CN102511074A (zh) * | 2010-06-04 | 2012-06-20 | 住友电气工业株式会社 | 碳化硅衬底的制造方法、半导体器件的制造方法、碳化硅衬底及半导体器件 |
CN102376876B (zh) * | 2010-08-05 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | 相变非易失性存储器及其加工方法 |
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CN106796965A (zh) * | 2014-06-26 | 2017-05-31 | 索泰克公司 | 包括接合层的半导体结构、多结光伏电池和相关方法 |
CN106796965B (zh) * | 2014-06-26 | 2019-07-23 | 索泰克公司 | 半导体结构及其制造方法 |
CN105990472A (zh) * | 2015-02-04 | 2016-10-05 | 深圳市立洋光电子有限公司 | 一种硅衬底led发光芯片的表面处理方法 |
CN109196622A (zh) * | 2016-05-31 | 2019-01-11 | 欧洲激光系统和解决方案公司 | 深结电子器件及其制造方法 |
CN109196622B (zh) * | 2016-05-31 | 2024-04-02 | 欧洲激光系统和解决方案公司 | 深结电子器件及其制造方法 |
CN107302037B (zh) * | 2017-06-12 | 2019-05-17 | 北京工业大学 | 基区Ge组分分段分布的SiGe/Si异质结光敏晶体管探测器 |
CN107302037A (zh) * | 2017-06-12 | 2017-10-27 | 北京工业大学 | 基区Ge组分分段分布的SiGe/Si异质结光敏晶体管探测器 |
CN108878263A (zh) * | 2018-06-25 | 2018-11-23 | 中国科学院微电子研究所 | 半导体结构与其制作方法 |
CN108878263B (zh) * | 2018-06-25 | 2022-03-18 | 中国科学院微电子研究所 | 半导体结构与其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090026495A1 (en) | 2009-01-29 |
TW521395B (en) | 2003-02-21 |
EP1327263A1 (en) | 2003-07-16 |
AU2001287881A1 (en) | 2002-04-29 |
US6890835B1 (en) | 2005-05-10 |
US7786468B2 (en) | 2010-08-31 |
US7427773B2 (en) | 2008-09-23 |
US20050104067A1 (en) | 2005-05-19 |
KR100613182B1 (ko) | 2006-08-17 |
KR20030051714A (ko) | 2003-06-25 |
WO2002033746A1 (en) | 2002-04-25 |
IL155395A0 (en) | 2003-11-23 |
US20090267052A1 (en) | 2009-10-29 |
IL155395A (en) | 2007-05-15 |
CN100472748C (zh) | 2009-03-25 |
JP2004512683A (ja) | 2004-04-22 |
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