IL155395A0 - Layer transfer of low defect sige using an etch-back process - Google Patents

Layer transfer of low defect sige using an etch-back process

Info

Publication number
IL155395A0
IL155395A0 IL15539501A IL15539501A IL155395A0 IL 155395 A0 IL155395 A0 IL 155395A0 IL 15539501 A IL15539501 A IL 15539501A IL 15539501 A IL15539501 A IL 15539501A IL 155395 A0 IL155395 A0 IL 155395A0
Authority
IL
Israel
Prior art keywords
etch
back process
layer transfer
low defect
sige
Prior art date
Application number
IL15539501A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IL155395A0 publication Critical patent/IL155395A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
IL15539501A 2000-10-19 2001-09-17 Layer transfer of low defect sige using an etch-back process IL155395A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/692,606 US6890835B1 (en) 2000-10-19 2000-10-19 Layer transfer of low defect SiGe using an etch-back process
PCT/GB2001/004159 WO2002033746A1 (en) 2000-10-19 2001-09-17 Layer transfer of low defect sige using an etch-back process

Publications (1)

Publication Number Publication Date
IL155395A0 true IL155395A0 (en) 2003-11-23

Family

ID=24781275

Family Applications (2)

Application Number Title Priority Date Filing Date
IL15539501A IL155395A0 (en) 2000-10-19 2001-09-17 Layer transfer of low defect sige using an etch-back process
IL155395A IL155395A (en) 2000-10-19 2003-04-11 Transfer high-quality silicone-germanium layers using a process of repeat engraving

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL155395A IL155395A (en) 2000-10-19 2003-04-11 Transfer high-quality silicone-germanium layers using a process of repeat engraving

Country Status (9)

Country Link
US (4) US6890835B1 (xx)
EP (1) EP1327263A1 (xx)
JP (1) JP2004512683A (xx)
KR (1) KR100613182B1 (xx)
CN (1) CN100472748C (xx)
AU (1) AU2001287881A1 (xx)
IL (2) IL155395A0 (xx)
TW (1) TW521395B (xx)
WO (1) WO2002033746A1 (xx)

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Also Published As

Publication number Publication date
KR20030051714A (ko) 2003-06-25
US7786468B2 (en) 2010-08-31
US20090267052A1 (en) 2009-10-29
CN100472748C (zh) 2009-03-25
AU2001287881A1 (en) 2002-04-29
US20050104067A1 (en) 2005-05-19
EP1327263A1 (en) 2003-07-16
WO2002033746A1 (en) 2002-04-25
KR100613182B1 (ko) 2006-08-17
JP2004512683A (ja) 2004-04-22
US6890835B1 (en) 2005-05-10
US7427773B2 (en) 2008-09-23
US20090026495A1 (en) 2009-01-29
IL155395A (en) 2007-05-15
CN1531751A (zh) 2004-09-22
TW521395B (en) 2003-02-21

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