JPWO2020014441A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2020014441A5
JPWO2020014441A5 JP2020573143A JP2020573143A JPWO2020014441A5 JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5 JP 2020573143 A JP2020573143 A JP 2020573143A JP 2020573143 A JP2020573143 A JP 2020573143A JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5
Authority
JP
Japan
Prior art keywords
single crystal
multilayer structure
structure according
crystal silicon
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020573143A
Other languages
English (en)
Japanese (ja)
Other versions
JP7248711B2 (ja
JP2021532570A (ja
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/041345 external-priority patent/WO2020014441A1/en
Publication of JP2021532570A publication Critical patent/JP2021532570A/ja
Publication of JPWO2020014441A5 publication Critical patent/JPWO2020014441A5/ja
Priority to JP2023039665A priority Critical patent/JP2023088940A/ja
Application granted granted Critical
Publication of JP7248711B2 publication Critical patent/JP7248711B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020573143A 2018-07-13 2019-07-11 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 Active JP7248711B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023039665A JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862697474P 2018-07-13 2018-07-13
US62/697,474 2018-07-13
PCT/US2019/041345 WO2020014441A1 (en) 2018-07-13 2019-07-11 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023039665A Division JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造

Publications (3)

Publication Number Publication Date
JP2021532570A JP2021532570A (ja) 2021-11-25
JPWO2020014441A5 true JPWO2020014441A5 (zh) 2022-07-20
JP7248711B2 JP7248711B2 (ja) 2023-03-29

Family

ID=67303527

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020572765A Active JP7275172B2 (ja) 2018-07-13 2019-06-28 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム
JP2020573143A Active JP7248711B2 (ja) 2018-07-13 2019-07-11 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造
JP2023039665A Pending JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造
JP2023075619A Active JP7470233B2 (ja) 2018-07-13 2023-05-01 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2020572765A Active JP7275172B2 (ja) 2018-07-13 2019-06-28 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023039665A Pending JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造
JP2023075619A Active JP7470233B2 (ja) 2018-07-13 2023-05-01 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム

Country Status (8)

Country Link
US (6) US10943813B2 (zh)
EP (3) EP3821459B1 (zh)
JP (4) JP7275172B2 (zh)
KR (4) KR20230107698A (zh)
CN (3) CN112400224A (zh)
SG (2) SG11202013101XA (zh)
TW (5) TWI819956B (zh)
WO (2) WO2020014007A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3066858B1 (fr) * 2017-05-23 2019-06-21 Soitec Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
US11362176B2 (en) * 2020-05-28 2022-06-14 Taiwan Semiconductor Manufacturing Company Limited RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same
US11515397B2 (en) * 2020-07-21 2022-11-29 Globalfoundries U.S. Inc. III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer
FR3116151A1 (fr) * 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d’une structure de piegeage d’un substrat utile
US11658177B2 (en) * 2020-12-07 2023-05-23 Globalfoundries U.S. Inc. Semiconductor device structures with a substrate biasing scheme
WO2024101019A1 (ja) * 2022-11-11 2024-05-16 信越半導体株式会社 高周波デバイス用基板およびその製造方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JP2000082679A (ja) 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
WO2000055397A1 (fr) 1999-03-16 2000-09-21 Shin-Etsu Handotai Co., Ltd. Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
JP2001278692A (ja) 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
JP4463957B2 (ja) * 2000-09-20 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
US6448152B1 (en) * 2001-02-20 2002-09-10 Silicon Genesis Corporation Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer
KR100745312B1 (ko) * 2001-04-10 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 고저항율의 초크랄스키 실리콘 내의 열적 도너 형성의 제어
TWI256076B (en) 2001-04-11 2006-06-01 Memc Electronic Materials Control of thermal donor formation in high resistivity CZ silicon
KR100543252B1 (ko) 2001-05-29 2006-01-20 신닛뽄세이테쯔 카부시키카이샤 Soi 기판
DE10131249A1 (de) 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
WO2003060982A2 (en) 2001-12-21 2003-07-24 Memc Electronic Materials, Inc. Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same
US7153757B2 (en) 2002-08-29 2006-12-26 Analog Devices, Inc. Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure
DE102004021113B4 (de) 2004-04-29 2006-04-20 Siltronic Ag SOI-Scheibe und Verfahren zu ihrer Herstellung
US7473614B2 (en) * 2004-11-12 2009-01-06 Intel Corporation Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer
KR20080017376A (ko) 2005-05-19 2008-02-26 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 고저항률 실리콘 구조 및 그 제조 프로세스
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Sumco Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法
CN103147122B (zh) 2006-05-19 2016-01-20 Memc电子材料有限公司 控制cz生长过程中由硅单晶侧面诱发的附聚点缺陷和氧簇的形成
JP2008263087A (ja) * 2007-04-12 2008-10-30 Shin Etsu Chem Co Ltd Soi基板の製造方法
US20100193900A1 (en) 2007-07-13 2010-08-05 National University Corporation Tohoku University Soi substrate and semiconductor device using an soi substrate
SG161151A1 (en) * 2008-10-22 2010-05-27 Semiconductor Energy Lab Soi substrate and method for manufacturing the same
US8263484B2 (en) * 2009-03-03 2012-09-11 Sumco Corporation High resistivity silicon wafer and method for manufacturing the same
US8319262B2 (en) * 2009-07-31 2012-11-27 Sri International Substrate bias for CMOS imagers
CN103430298B (zh) * 2011-03-16 2016-03-16 Memc电子材料有限公司 在处理晶片中具有高电阻率区域的绝缘体上硅结构及制造此类结构的方法
FR2973159B1 (fr) * 2011-03-22 2013-04-19 Soitec Silicon On Insulator Procede de fabrication d'un substrat de base
JP2013129564A (ja) * 2011-12-21 2013-07-04 Siltronic Ag シリコン単結晶基板およびその製造方法
US20150132931A1 (en) * 2013-07-01 2015-05-14 Solexel, Inc. High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells
US9768056B2 (en) * 2013-10-31 2017-09-19 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition
US9853133B2 (en) 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
EP3221884B1 (en) * 2014-11-18 2022-06-01 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafers with charge trapping layers and method of manufacturing thereof
EP3221885B1 (en) * 2014-11-18 2019-10-23 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
EP4120320A1 (en) * 2015-03-03 2023-01-18 GlobalWafers Co., Ltd. Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
US9881832B2 (en) * 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
US10332782B2 (en) 2015-06-01 2019-06-25 Globalwafers Co., Ltd. Method of manufacturing silicon germanium-on-insulator
FR3037438B1 (fr) * 2015-06-09 2017-06-16 Soitec Silicon On Insulator Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges
JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせsoiウェーハの製造方法
US9831115B2 (en) * 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
CN116314384A (zh) * 2016-06-08 2023-06-23 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) * 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
CN115763496A (zh) * 2016-10-26 2023-03-07 环球晶圆股份有限公司 具有增强电荷俘获效率的高电阻率绝缘体上硅衬底
EP3549162B1 (en) 2016-12-05 2022-02-02 GlobalWafers Co., Ltd. High resistivity silicon-on-insulator structure and method of manufacture thereof
US9984949B1 (en) * 2017-01-12 2018-05-29 International Business Machines Corporation Surface passivation having reduced interface defect density
JP6696917B2 (ja) 2017-01-18 2020-05-20 信越化学工業株式会社 複合基板の製造方法
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
HUE060677T2 (hu) * 2018-09-14 2023-04-28 Commissariat Energie Atomique Eljárás félvezetõ anyagból készült vizsgálati minta termikus donorkoncentrációjának meghatározására

Similar Documents

Publication Publication Date Title
JP7248711B2 (ja) 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造
KR102587815B1 (ko) 높은 저항률 실리콘-온-절연체 구조 및 그의 제조 방법
JP2017538297A (ja) 電荷トラップ層を備えた高抵抗率の半導体・オン・インシュレーターウェハーの製造方法
JPWO2020014441A5 (zh)
JPWO2020014007A5 (zh)
TW202413746A (zh) 製備多層結構的方法