JPWO2020014441A5 - - Google Patents
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- JPWO2020014441A5 JPWO2020014441A5 JP2020573143A JP2020573143A JPWO2020014441A5 JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5 JP 2020573143 A JP2020573143 A JP 2020573143A JP 2020573143 A JP2020573143 A JP 2020573143A JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- multilayer structure
- structure according
- crystal silicon
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023039665A JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862697474P | 2018-07-13 | 2018-07-13 | |
US62/697,474 | 2018-07-13 | ||
PCT/US2019/041345 WO2020014441A1 (en) | 2018-07-13 | 2019-07-11 | Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023039665A Division JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021532570A JP2021532570A (ja) | 2021-11-25 |
JPWO2020014441A5 true JPWO2020014441A5 (zh) | 2022-07-20 |
JP7248711B2 JP7248711B2 (ja) | 2023-03-29 |
Family
ID=67303527
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020572765A Active JP7275172B2 (ja) | 2018-07-13 | 2019-06-28 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
JP2020573143A Active JP7248711B2 (ja) | 2018-07-13 | 2019-07-11 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
JP2023039665A Pending JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
JP2023075619A Active JP7470233B2 (ja) | 2018-07-13 | 2023-05-01 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020572765A Active JP7275172B2 (ja) | 2018-07-13 | 2019-06-28 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023039665A Pending JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
JP2023075619A Active JP7470233B2 (ja) | 2018-07-13 | 2023-05-01 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
Country Status (8)
Country | Link |
---|---|
US (6) | US10943813B2 (zh) |
EP (3) | EP3821459B1 (zh) |
JP (4) | JP7275172B2 (zh) |
KR (4) | KR20230107698A (zh) |
CN (3) | CN112400224A (zh) |
SG (2) | SG11202013101XA (zh) |
TW (5) | TWI819956B (zh) |
WO (2) | WO2020014007A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3066858B1 (fr) * | 2017-05-23 | 2019-06-21 | Soitec | Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
US11362176B2 (en) * | 2020-05-28 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company Limited | RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same |
US11515397B2 (en) * | 2020-07-21 | 2022-11-29 | Globalfoundries U.S. Inc. | III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer |
FR3116151A1 (fr) * | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’une structure de piegeage d’un substrat utile |
US11658177B2 (en) * | 2020-12-07 | 2023-05-23 | Globalfoundries U.S. Inc. | Semiconductor device structures with a substrate biasing scheme |
WO2024101019A1 (ja) * | 2022-11-11 | 2024-05-16 | 信越半導体株式会社 | 高周波デバイス用基板およびその製造方法 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
JP2000082679A (ja) | 1998-07-08 | 2000-03-21 | Canon Inc | 半導体基板とその作製方法 |
WO2000055397A1 (fr) | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
US6653209B1 (en) | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
JP2001278692A (ja) | 2000-03-29 | 2001-10-10 | Shin Etsu Handotai Co Ltd | シリコンウエーハおよびシリコン単結晶の製造方法 |
JP4463957B2 (ja) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
US6448152B1 (en) * | 2001-02-20 | 2002-09-10 | Silicon Genesis Corporation | Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer |
KR100745312B1 (ko) * | 2001-04-10 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 고저항율의 초크랄스키 실리콘 내의 열적 도너 형성의 제어 |
TWI256076B (en) | 2001-04-11 | 2006-06-01 | Memc Electronic Materials | Control of thermal donor formation in high resistivity CZ silicon |
KR100543252B1 (ko) | 2001-05-29 | 2006-01-20 | 신닛뽄세이테쯔 카부시키카이샤 | Soi 기판 |
DE10131249A1 (de) | 2001-06-28 | 2002-05-23 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material |
WO2003060982A2 (en) | 2001-12-21 | 2003-07-24 | Memc Electronic Materials, Inc. | Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same |
US7153757B2 (en) | 2002-08-29 | 2006-12-26 | Analog Devices, Inc. | Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure |
DE102004021113B4 (de) | 2004-04-29 | 2006-04-20 | Siltronic Ag | SOI-Scheibe und Verfahren zu ihrer Herstellung |
US7473614B2 (en) * | 2004-11-12 | 2009-01-06 | Intel Corporation | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer |
KR20080017376A (ko) | 2005-05-19 | 2008-02-26 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 고저항률 실리콘 구조 및 그 제조 프로세스 |
JP4631717B2 (ja) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
CN103147122B (zh) | 2006-05-19 | 2016-01-20 | Memc电子材料有限公司 | 控制cz生长过程中由硅单晶侧面诱发的附聚点缺陷和氧簇的形成 |
JP2008263087A (ja) * | 2007-04-12 | 2008-10-30 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
US20100193900A1 (en) | 2007-07-13 | 2010-08-05 | National University Corporation Tohoku University | Soi substrate and semiconductor device using an soi substrate |
SG161151A1 (en) * | 2008-10-22 | 2010-05-27 | Semiconductor Energy Lab | Soi substrate and method for manufacturing the same |
US8263484B2 (en) * | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
US8319262B2 (en) * | 2009-07-31 | 2012-11-27 | Sri International | Substrate bias for CMOS imagers |
CN103430298B (zh) * | 2011-03-16 | 2016-03-16 | Memc电子材料有限公司 | 在处理晶片中具有高电阻率区域的绝缘体上硅结构及制造此类结构的方法 |
FR2973159B1 (fr) * | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de base |
JP2013129564A (ja) * | 2011-12-21 | 2013-07-04 | Siltronic Ag | シリコン単結晶基板およびその製造方法 |
US20150132931A1 (en) * | 2013-07-01 | 2015-05-14 | Solexel, Inc. | High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells |
US9768056B2 (en) * | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
US9853133B2 (en) | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
EP3221884B1 (en) * | 2014-11-18 | 2022-06-01 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafers with charge trapping layers and method of manufacturing thereof |
EP3221885B1 (en) * | 2014-11-18 | 2019-10-23 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
EP4120320A1 (en) * | 2015-03-03 | 2023-01-18 | GlobalWafers Co., Ltd. | Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress |
US9881832B2 (en) * | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
US10332782B2 (en) | 2015-06-01 | 2019-06-25 | Globalwafers Co., Ltd. | Method of manufacturing silicon germanium-on-insulator |
FR3037438B1 (fr) * | 2015-06-09 | 2017-06-16 | Soitec Silicon On Insulator | Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges |
JP6447439B2 (ja) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
US9831115B2 (en) * | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
CN116314384A (zh) * | 2016-06-08 | 2023-06-23 | 环球晶圆股份有限公司 | 具有经改进的机械强度的高电阻率单晶硅锭及晶片 |
US10269617B2 (en) * | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
CN115763496A (zh) * | 2016-10-26 | 2023-03-07 | 环球晶圆股份有限公司 | 具有增强电荷俘获效率的高电阻率绝缘体上硅衬底 |
EP3549162B1 (en) | 2016-12-05 | 2022-02-02 | GlobalWafers Co., Ltd. | High resistivity silicon-on-insulator structure and method of manufacture thereof |
US9984949B1 (en) * | 2017-01-12 | 2018-05-29 | International Business Machines Corporation | Surface passivation having reduced interface defect density |
JP6696917B2 (ja) | 2017-01-18 | 2020-05-20 | 信越化学工業株式会社 | 複合基板の製造方法 |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
HUE060677T2 (hu) * | 2018-09-14 | 2023-04-28 | Commissariat Energie Atomique | Eljárás félvezetõ anyagból készült vizsgálati minta termikus donorkoncentrációjának meghatározására |
-
2019
- 2019-06-26 US US16/452,762 patent/US10943813B2/en active Active
- 2019-06-28 CN CN201980044763.7A patent/CN112400224A/zh active Pending
- 2019-06-28 JP JP2020572765A patent/JP7275172B2/ja active Active
- 2019-06-28 WO PCT/US2019/039714 patent/WO2020014007A1/en unknown
- 2019-06-28 KR KR1020237022150A patent/KR20230107698A/ko active Application Filing
- 2019-06-28 KR KR1020207038000A patent/KR102551310B1/ko active IP Right Grant
- 2019-06-28 EP EP19740463.5A patent/EP3821459B1/en active Active
- 2019-06-28 SG SG11202013101XA patent/SG11202013101XA/en unknown
- 2019-07-08 TW TW112103365A patent/TWI819956B/zh active
- 2019-07-08 TW TW108124016A patent/TWI794525B/zh active
- 2019-07-08 TW TW112136233A patent/TW202401587A/zh unknown
- 2019-07-11 US US16/508,606 patent/US11075109B2/en active Active
- 2019-07-11 KR KR1020237021751A patent/KR20230098926A/ko active Application Filing
- 2019-07-11 KR KR1020207038023A patent/KR102550133B1/ko active IP Right Grant
- 2019-07-11 CN CN202210670187.0A patent/CN114975085A/zh active Pending
- 2019-07-11 JP JP2020573143A patent/JP7248711B2/ja active Active
- 2019-07-11 CN CN201980044762.2A patent/CN112385031B/zh active Active
- 2019-07-11 SG SG11202013102VA patent/SG11202013102VA/en unknown
- 2019-07-11 WO PCT/US2019/041345 patent/WO2020014441A1/en unknown
- 2019-07-11 EP EP19748626.9A patent/EP3821460B1/en active Active
- 2019-07-11 EP EP23175768.3A patent/EP4235748A3/en active Pending
- 2019-07-12 TW TW108124773A patent/TWI784184B/zh active
- 2019-07-12 TW TW111139265A patent/TWI828374B/zh active
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2021
- 2021-02-03 US US17/166,039 patent/US11532501B2/en active Active
- 2021-04-19 US US17/234,023 patent/US11626318B2/en active Active
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2022
- 2022-10-19 US US18/047,844 patent/US11887885B2/en active Active
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2023
- 2023-03-13 US US18/182,823 patent/US11942360B2/en active Active
- 2023-03-14 JP JP2023039665A patent/JP2023088940A/ja active Pending
- 2023-05-01 JP JP2023075619A patent/JP7470233B2/ja active Active
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