SG11202013101XA - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability - Google Patents
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityInfo
- Publication number
- SG11202013101XA SG11202013101XA SG11202013101XA SG11202013101XA SG11202013101XA SG 11202013101X A SG11202013101X A SG 11202013101XA SG 11202013101X A SG11202013101X A SG 11202013101XA SG 11202013101X A SG11202013101X A SG 11202013101XA SG 11202013101X A SG11202013101X A SG 11202013101XA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturability
- stability
- radio frequency
- superior performance
- wafer platform
- Prior art date
Links
- 239000012212 insulator Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862697474P | 2018-07-13 | 2018-07-13 | |
PCT/US2019/039714 WO2020014007A1 (en) | 2018-07-13 | 2019-06-28 | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202013101XA true SG11202013101XA (en) | 2021-02-25 |
Family
ID=67303527
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202013101XA SG11202013101XA (en) | 2018-07-13 | 2019-06-28 | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
SG11202013102VA SG11202013102VA (en) | 2018-07-13 | 2019-07-11 | Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202013102VA SG11202013102VA (en) | 2018-07-13 | 2019-07-11 | Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability |
Country Status (8)
Country | Link |
---|---|
US (6) | US10943813B2 (en) |
EP (3) | EP3821459B1 (en) |
JP (5) | JP7275172B2 (en) |
KR (4) | KR102551310B1 (en) |
CN (3) | CN112400224A (en) |
SG (2) | SG11202013101XA (en) |
TW (5) | TWI819956B (en) |
WO (2) | WO2020014007A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3066858B1 (en) * | 2017-05-23 | 2019-06-21 | Soitec | METHOD FOR MINIMIZING DISTORTION OF A SIGNAL IN A RADIO FREQUENCY CIRCUIT |
US10943813B2 (en) | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
US11362176B2 (en) * | 2020-05-28 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company Limited | RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same |
US11515397B2 (en) * | 2020-07-21 | 2022-11-29 | Globalfoundries U.S. Inc. | III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer |
FR3116151A1 (en) * | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR FORMING A USEFUL SUBSTRATE TRAPPING STRUCTURE |
US11658177B2 (en) * | 2020-12-07 | 2023-05-23 | Globalfoundries U.S. Inc. | Semiconductor device structures with a substrate biasing scheme |
CN114023633A (en) * | 2021-10-29 | 2022-02-08 | 苏州华太电子技术有限公司 | Preparation method of gate oxide layer of silicon carbide device and silicon carbide device |
JP2024070722A (en) * | 2022-11-11 | 2024-05-23 | 信越半導体株式会社 | Substrate for high frequency device and method for manufacturing same |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2617798B2 (en) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | Stacked semiconductor device and method of manufacturing the same |
JP2000082679A (en) | 1998-07-08 | 2000-03-21 | Canon Inc | Semiconductor substrate and production thereof |
WO2000055397A1 (en) | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Production method for silicon wafer and silicon wafer |
US6653209B1 (en) | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
JP2001278692A (en) | 2000-03-29 | 2001-10-10 | Shin Etsu Handotai Co Ltd | Manufacturing method of silicon wafer and single crystal silicon |
JP4463957B2 (en) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | Silicon wafer manufacturing method and silicon wafer |
US6448152B1 (en) * | 2001-02-20 | 2002-09-10 | Silicon Genesis Corporation | Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer |
KR100745312B1 (en) * | 2001-04-10 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | Control of thermal donor formation in high resistivity cz silicon |
US6897084B2 (en) | 2001-04-11 | 2005-05-24 | Memc Electronic Materials, Inc. | Control of oxygen precipitate formation in high resistivity CZ silicon |
US7084459B2 (en) | 2001-05-29 | 2006-08-01 | Nippon Steel Corporation | SOI substrate |
DE10131249A1 (en) | 2001-06-28 | 2002-05-23 | Wacker Siltronic Halbleitermat | Production of a film or a layer of semiconductor material comprises producing structures of repeating recesses on the surface of a semiconductor material |
KR100920862B1 (en) | 2001-12-21 | 2009-10-09 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | Process for making ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers |
US7153757B2 (en) | 2002-08-29 | 2006-12-26 | Analog Devices, Inc. | Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure |
DE102004021113B4 (en) | 2004-04-29 | 2006-04-20 | Siltronic Ag | SOI disk and process for its production |
US7473614B2 (en) | 2004-11-12 | 2009-01-06 | Intel Corporation | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer |
KR20080017376A (en) | 2005-05-19 | 2008-02-26 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | A high resistivity silicon structure and a process for the preparation thereof |
JP4631717B2 (en) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT |
KR101385810B1 (en) | 2006-05-19 | 2014-04-16 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth |
JP2008263087A (en) * | 2007-04-12 | 2008-10-30 | Shin Etsu Chem Co Ltd | Method of manufacturing soi substrate |
US20100193900A1 (en) | 2007-07-13 | 2010-08-05 | National University Corporation Tohoku University | Soi substrate and semiconductor device using an soi substrate |
SG161151A1 (en) * | 2008-10-22 | 2010-05-27 | Semiconductor Energy Lab | Soi substrate and method for manufacturing the same |
US8263484B2 (en) * | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
US8835999B2 (en) * | 2009-07-31 | 2014-09-16 | Sri International | Ring pixel for CMOS imagers |
US8796116B2 (en) * | 2011-01-31 | 2014-08-05 | Sunedison Semiconductor Limited | Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods |
EP2686878B1 (en) * | 2011-03-16 | 2016-05-18 | MEMC Electronic Materials, Inc. | Silicon on insulator structures having high resistivity regions in the handle wafer and methods for producing such structures |
FR2973159B1 (en) | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING BASE SUBSTRATE |
JP2013129564A (en) * | 2011-12-21 | 2013-07-04 | Siltronic Ag | Silicon single crystal substrate and method of manufacturing the same |
MY188961A (en) * | 2013-07-01 | 2022-01-14 | Solexel Inc | High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells |
US9768056B2 (en) * | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
US9853133B2 (en) | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
WO2016081356A1 (en) * | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
WO2016081313A1 (en) * | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | A method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers |
US10283402B2 (en) * | 2015-03-03 | 2019-05-07 | Globalwafers Co., Ltd. | Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress |
US9881832B2 (en) * | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
WO2016196011A1 (en) | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | A method of manufacturing silicon germanium-on-insulator |
FR3037438B1 (en) * | 2015-06-09 | 2017-06-16 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A SEMICONDUCTOR ELEMENT COMPRISING A LOAD TRAPPING LAYER |
JP6447439B2 (en) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | Manufacturing method of bonded SOI wafer |
US9831115B2 (en) * | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
KR102439602B1 (en) | 2016-06-08 | 2022-09-01 | 글로벌웨이퍼스 씨오., 엘티디. | Single-crystal silicon ingots with high resistivity and wafers with improved mechanical strength |
US10269617B2 (en) * | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
CN115763496A (en) * | 2016-10-26 | 2023-03-07 | 环球晶圆股份有限公司 | High resistivity silicon-on-insulator substrate with enhanced charge trapping efficiency |
CN110352484B (en) * | 2016-12-05 | 2022-12-06 | 环球晶圆股份有限公司 | High resistivity silicon-on-insulator structure and method of making same |
US9984949B1 (en) * | 2017-01-12 | 2018-05-29 | International Business Machines Corporation | Surface passivation having reduced interface defect density |
JP6696917B2 (en) | 2017-01-18 | 2020-05-20 | 信越化学工業株式会社 | Manufacturing method of composite substrate |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
HUE060677T2 (en) * | 2018-09-14 | 2023-04-28 | Commissariat Energie Atomique | Method for determining the thermal donor concentration of a semiconductor sample |
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2019
- 2019-06-26 US US16/452,762 patent/US10943813B2/en active Active
- 2019-06-28 JP JP2020572765A patent/JP7275172B2/en active Active
- 2019-06-28 CN CN201980044763.7A patent/CN112400224A/en active Pending
- 2019-06-28 KR KR1020207038000A patent/KR102551310B1/en active IP Right Grant
- 2019-06-28 SG SG11202013101XA patent/SG11202013101XA/en unknown
- 2019-06-28 KR KR1020237022150A patent/KR20230107698A/en active Application Filing
- 2019-06-28 WO PCT/US2019/039714 patent/WO2020014007A1/en unknown
- 2019-06-28 EP EP19740463.5A patent/EP3821459B1/en active Active
- 2019-07-08 TW TW112103365A patent/TWI819956B/en active
- 2019-07-08 TW TW108124016A patent/TWI794525B/en active
- 2019-07-11 WO PCT/US2019/041345 patent/WO2020014441A1/en unknown
- 2019-07-11 KR KR1020237021751A patent/KR20230098926A/en active Application Filing
- 2019-07-11 EP EP23175768.3A patent/EP4235748A3/en active Pending
- 2019-07-11 JP JP2020573143A patent/JP7248711B2/en active Active
- 2019-07-11 SG SG11202013102VA patent/SG11202013102VA/en unknown
- 2019-07-11 US US16/508,606 patent/US11075109B2/en active Active
- 2019-07-11 EP EP19748626.9A patent/EP3821460B1/en active Active
- 2019-07-11 CN CN202210670187.0A patent/CN114975085A/en active Pending
- 2019-07-11 KR KR1020207038023A patent/KR102550133B1/en active IP Right Grant
- 2019-07-11 CN CN201980044762.2A patent/CN112385031B/en active Active
- 2019-07-12 TW TW111139265A patent/TWI828374B/en active
- 2019-07-12 TW TW112146577A patent/TW202413746A/en unknown
- 2019-07-12 TW TW108124773A patent/TWI784184B/en active
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2021
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2022
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2023
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2024
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