DE112013000798T8 - Epitaktische Technik zum Reduzieren von Schraubenversetzungen in unter Spannung befindlichen Halbleiterverbundstoffen - Google Patents

Epitaktische Technik zum Reduzieren von Schraubenversetzungen in unter Spannung befindlichen Halbleiterverbundstoffen Download PDF

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Publication number
DE112013000798T8
DE112013000798T8 DE112013000798.3T DE112013000798T DE112013000798T8 DE 112013000798 T8 DE112013000798 T8 DE 112013000798T8 DE 112013000798 T DE112013000798 T DE 112013000798T DE 112013000798 T8 DE112013000798 T8 DE 112013000798T8
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Prior art keywords
screw dislocations
reducing screw
epitaxial technique
stressed semiconductor
semiconductor composites
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DE112013000798.3T
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DE112013000798T5 (de
Inventor
Maxim S. Shatalov
Alexander Dobrinsky
Remigijus Gaska
Michael Shur
Wenhong Sun
Rakesh Jain
Jinwei Yang
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Sensor Electronic Technology Inc
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Sensor Electronic Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
DE112013000798.3T 2012-02-01 2013-02-01 Epitaktische Technik zum Reduzieren von Schraubenversetzungen in unter Spannung befindlichen Halbleiterverbundstoffen Active DE112013000798T8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261593426P 2012-02-01 2012-02-01
US60/593,426 2012-02-01
US61/593,426 2012-02-01
PCT/US2013/024310 WO2013116622A1 (en) 2012-02-01 2013-02-01 Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds

Publications (2)

Publication Number Publication Date
DE112013000798T5 DE112013000798T5 (de) 2014-12-04
DE112013000798T8 true DE112013000798T8 (de) 2014-12-18

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DE112013000798.3T Active DE112013000798T8 (de) 2012-02-01 2013-02-01 Epitaktische Technik zum Reduzieren von Schraubenversetzungen in unter Spannung befindlichen Halbleiterverbundstoffen

Country Status (4)

Country Link
US (1) US10211048B2 (de)
CN (1) CN104160479B (de)
DE (1) DE112013000798T8 (de)
WO (1) WO2013116622A1 (de)

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US10158044B2 (en) 2011-12-03 2018-12-18 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US10490697B2 (en) 2011-12-03 2019-11-26 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US9312428B2 (en) 2013-01-09 2016-04-12 Sensor Electronic Technology, Inc. Light emitting heterostructure with partially relaxed semiconductor layer
US9960315B2 (en) 2013-01-09 2018-05-01 Sensor Electronic Technology, Inc. Light emitting heterostructure with partially relaxed semiconductor layer
US10804423B2 (en) 2013-09-03 2020-10-13 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US9647168B2 (en) 2013-09-03 2017-05-09 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
CN105518878B (zh) 2013-09-03 2018-05-25 传感器电子技术股份有限公司 具有调制掺杂的光电子器件
US10903391B2 (en) 2013-09-03 2021-01-26 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
JP6860293B2 (ja) * 2015-04-28 2021-04-14 日機装株式会社 発光素子および発光素子の製造方法
US10923619B2 (en) 2016-06-01 2021-02-16 Sensor Electronic Technology, Inc. Semiconductor heterostructure with at least one stress control layer
CN117650210A (zh) * 2023-12-29 2024-03-05 聚灿光电科技（宿迁）有限公司 一种具有应力释放层的led外延结构及其生长方法

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Also Published As

Publication number Publication date
CN104160479A (zh) 2014-11-19
CN104160479B (zh) 2019-04-30
US10211048B2 (en) 2019-02-19
WO2013116622A1 (en) 2013-08-08
US20130193480A1 (en) 2013-08-01
DE112013000798T5 (de) 2014-12-04

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