DE69738307D1 - Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle - Google Patents

Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle

Info

Publication number
DE69738307D1
DE69738307D1 DE69738307T DE69738307T DE69738307D1 DE 69738307 D1 DE69738307 D1 DE 69738307D1 DE 69738307 T DE69738307 T DE 69738307T DE 69738307 T DE69738307 T DE 69738307T DE 69738307 D1 DE69738307 D1 DE 69738307D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738307T
Other languages
English (en)
Other versions
DE69738307T2 (de
Inventor
Nakagawa Katsumi
Yonehara Takao
Nishida Shoji
Kiyofumi Sakaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35013396A external-priority patent/JP3647176B2/ja
Priority claimed from JP35013296A external-priority patent/JP3501606B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69738307D1 publication Critical patent/DE69738307D1/de
Application granted granted Critical
Publication of DE69738307T2 publication Critical patent/DE69738307T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69738307T 1996-12-27 1997-12-23 Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle Expired - Lifetime DE69738307T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP35013396A JP3647176B2 (ja) 1996-12-27 1996-12-27 半導体基材及び太陽電池の製造方法及びその製造装置
JP35013396 1996-12-27
JP35013296 1996-12-27
JP35013296A JP3501606B2 (ja) 1996-12-27 1996-12-27 半導体基材の製造方法、および太陽電池の製造方法

Publications (2)

Publication Number Publication Date
DE69738307D1 true DE69738307D1 (de) 2008-01-03
DE69738307T2 DE69738307T2 (de) 2008-10-02

Family

ID=26579128

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738307T Expired - Lifetime DE69738307T2 (de) 1996-12-27 1997-12-23 Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle

Country Status (6)

Country Link
US (1) US6190937B1 (de)
EP (1) EP0851513B1 (de)
KR (1) KR100345624B1 (de)
CN (2) CN1156027C (de)
AU (1) AU739882B2 (de)
DE (1) DE69738307T2 (de)

Families Citing this family (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
EP0926709A3 (de) 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Herstellungsmethode einer SOI Struktur
DE19803013B4 (de) * 1998-01-27 2005-02-03 Robert Bosch Gmbh Verfahren zum Ablösen einer Epitaxieschicht oder eines Schichtsystems und nachfolgendem Aufbringen auf einen alternativen Träger
JP3809733B2 (ja) * 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP3144387B2 (ja) * 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
JP2000124341A (ja) * 1998-10-21 2000-04-28 Sony Corp 半導体装置およびその製造方法
DE19851873A1 (de) * 1998-11-10 2000-05-11 Zae Bayern Verfahren zum Aufwachsen einer kristallinen Struktur
JP2000349264A (ja) 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
EP1024523A1 (de) * 1999-01-27 2000-08-02 Imec (Interuniversity Microelectronics Center) VZW Herstellungsverfahren von Dünnschicht-Halbleiterbauelementen
JP2000223683A (ja) * 1999-02-02 2000-08-11 Canon Inc 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにｓｏｉ基板の製造方法
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
EP1065734B1 (de) 1999-06-09 2009-05-13 Kabushiki Kaisha Toshiba Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
JP2001007362A (ja) * 1999-06-17 2001-01-12 Canon Inc 半導体基材および太陽電池の製造方法
AU5518100A (en) * 1999-07-13 2001-01-30 Eidgenossische Technische Hochschule Zurich Flexible thin-layer solar cell
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
FR2802340B1 (fr) * 1999-12-13 2003-09-05 Commissariat Energie Atomique Structure comportant des cellules photovoltaiques et procede de realisation
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6602767B2 (en) * 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
JP2002043566A (ja) * 2000-07-27 2002-02-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
US6953506B2 (en) * 2000-10-30 2005-10-11 Canon Kabushiki Kaisha Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same
JP2002187791A (ja) * 2000-12-15 2002-07-05 Canon Inc 液相成長方法および液相成長装置
JP2002203799A (ja) 2000-12-28 2002-07-19 Canon Inc 液相成長方法および液相成長装置
JP2002229473A (ja) 2001-01-31 2002-08-14 Canon Inc 表示装置の製造方法
JP4708577B2 (ja) 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP4803884B2 (ja) * 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6855649B2 (en) * 2001-06-12 2005-02-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004002135A (ja) * 2001-08-28 2004-01-08 Canon Inc 液相成長方法及び液相成長装置
US7163826B2 (en) * 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
US6886234B2 (en) * 2002-01-22 2005-05-03 Seagate Technology Llc Top cover removal machine for disc drives
JP2003292398A (ja) * 2002-03-29 2003-10-15 Canon Inc 単結晶シリコンウェファの製造方法
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
DE10255964A1 (de) 2002-11-29 2004-07-01 Siemens Ag Photovoltaisches Bauelement und Herstellungsverfahren dazu
JP2004335642A (ja) * 2003-05-06 2004-11-25 Canon Inc 基板およびその製造方法
US7622363B2 (en) * 2003-05-06 2009-11-24 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
US20050124137A1 (en) * 2003-05-07 2005-06-09 Canon Kabushiki Kaisha Semiconductor substrate and manufacturing method therefor
JP2004349540A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US20050082526A1 (en) * 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
JP2005135942A (ja) * 2003-10-28 2005-05-26 Canon Inc 電極配設方法
JP2005142268A (ja) * 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
CN1322594C (zh) * 2003-12-09 2007-06-20 清华大学 一种薄膜太阳能电池衬底制备工艺
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
DE102004003761A1 (de) * 2004-01-23 2005-08-25 Forschungszentrum Jülich GmbH Herstellungsverfahren für Siliziumsolarzellen umfassend µc-Siliziumschichten
KR101023146B1 (ko) * 2004-04-01 2011-03-18 삼성에스디아이 주식회사 태양전지 및 그 제조방법
EP1589548A1 (de) * 2004-04-23 2005-10-26 Sony Deutschland GmbH Verfahren zur Herstellung eines porösen Halbleiterfilmes auf einem Substrat.
FR2870989B1 (fr) * 2004-05-27 2006-08-04 Commissariat Energie Atomique Substrat pour application electronique, comprenant un support flexible et son procede de fabrication
JP2005336008A (ja) 2004-05-27 2005-12-08 Canon Inc シリコン膜の製造方法および太陽電池の製造方法
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
CN101120433B (zh) * 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
JP4771510B2 (ja) * 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
JP4950047B2 (ja) * 2004-07-22 2012-06-13 ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ ゲルマニウムの成長方法及び半導体基板の製造方法
US7846759B2 (en) * 2004-10-21 2010-12-07 Aonex Technologies, Inc. Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
US7687372B2 (en) * 2005-04-08 2010-03-30 Versatilis Llc System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor
JP2006344618A (ja) * 2005-06-07 2006-12-21 Fujifilm Holdings Corp 機能性膜含有構造体、及び、機能性膜の製造方法
CN101263588B (zh) 2005-06-24 2013-03-20 科纳卡技术股份有限公司 制备电极的方法
JP2009501448A (ja) * 2005-07-12 2009-01-15 コナルカ テクノロジーズ インコーポレイテッド 光電池の転写方法
KR100677374B1 (ko) * 2005-11-14 2007-02-02 준 신 이 박판 실리콘 기판을 이용한 다공성 실리콘 태양전지 및 그제조방법
US7800117B2 (en) * 2005-12-28 2010-09-21 Group Iv Semiconductor, Inc. Pixel structure for a solid state light emitting device
WO2007118121A2 (en) * 2006-04-05 2007-10-18 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
EP1903157A3 (de) * 2006-09-19 2008-05-14 Integrated Dynamics Engineering GmbH Umgebungslärmabschirmvorrichtung
JP5171016B2 (ja) 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
US20080277778A1 (en) 2007-05-10 2008-11-13 Furman Bruce K Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
JP5110593B2 (ja) * 2007-08-30 2012-12-26 国立大学法人 筑波大学 半導体材料、それを用いた太陽電池、およびそれらの製造方法
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
KR101608953B1 (ko) * 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8323408B2 (en) * 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation
US8163090B2 (en) * 2007-12-10 2012-04-24 Solopower, Inc. Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber formation
EP2075850A3 (de) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelektrische Umwandlungsvorrichtung und Verfahren zu ihrer Herstellung
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5025508B2 (ja) * 2008-01-30 2012-09-12 東京エレクトロン株式会社 ポリシリコン膜の除去方法および記憶媒体
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
US8563352B2 (en) * 2008-02-05 2013-10-22 Gtat Corporation Creation and translation of low-relief texture for a photovoltaic cell
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US8030119B2 (en) * 2008-03-08 2011-10-04 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
EP2105972A3 (de) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelektrische Umwandlungsvorrichtung und Verfahren zu deren Herstellung
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
JP2010283339A (ja) 2009-05-02 2010-12-16 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
US20100326510A1 (en) * 2009-06-27 2010-12-30 Twin Creeks Technologies, Inc. Thin semiconductor lamina adhered to a flexible substrate
US20100330731A1 (en) * 2009-06-27 2010-12-30 Twin Creeks Technologies, Inc. Method to form a thin semiconductor lamina adhered to a flexible substrate
US20110056532A1 (en) * 2009-09-09 2011-03-10 Crystal Solar, Inc. Method for manufacturing thin crystalline solar cells pre-assembled on a panel
KR101084940B1 (ko) 2009-09-28 2011-11-17 삼성전기주식회사 실리콘 광전자 증배관
JP5706670B2 (ja) 2009-11-24 2015-04-22 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
FR2957456B1 (fr) * 2010-03-10 2013-01-04 Commissariat Energie Atomique Procede de fabrication d'un substrat comprenant une etape d'amincissement avec arret a detection d'une zone poreuse
US8349626B2 (en) * 2010-03-23 2013-01-08 Gtat Corporation Creation of low-relief texture for a photovoltaic cell
US8697541B1 (en) * 2010-12-24 2014-04-15 Ananda H. Kumar Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial growth of crack-free gallium nitride films and devices
CN102249553B (zh) * 2011-04-28 2013-12-25 中国科学院宁波材料技术与工程研究所 一种多晶硅薄膜的制备方法
FR2978600B1 (fr) * 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
CN103094411A (zh) * 2011-11-01 2013-05-08 智盛全球股份有限公司 复合式太阳能电池的多晶硅基板的制作方法
WO2013106827A1 (en) * 2012-01-13 2013-07-18 Crystal Solar, Inc. Silicon heterojunction solar cells
US20130337601A1 (en) * 2012-02-29 2013-12-19 Solexel, Inc. Structures and methods for high efficiency compound semiconductor solar cells
FR2987626B1 (fr) 2012-03-05 2015-04-03 Commissariat Energie Atomique Procede de collage direct utilisant une couche poreuse compressible
WO2014018567A1 (en) 2012-07-24 2014-01-30 Pharmacyclics, Inc. Mutations associated with resistance to inhibitors of bruton's tyrosine kinase (btk)
CN102800726B (zh) * 2012-09-04 2015-04-29 天津三安光电有限公司 一种倒装太阳能电池芯片及其制备方法
US20140199854A1 (en) * 2013-01-16 2014-07-17 United Microelectronics Corp. Method of forming film on different surfaces
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103426976B (zh) * 2013-08-07 2015-12-23 华北电力大学 一种利用可重复使用的衬底制备多晶硅薄膜的方法
WO2015084824A1 (en) * 2013-12-02 2015-06-11 Applied Materials, Inc. Methods for substrate processing
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
CN104078336B (zh) * 2014-07-02 2018-01-09 上海朕芯微电子科技有限公司 无衬底结构的功率器件制造工艺
US9755015B1 (en) 2016-05-10 2017-09-05 Globalfoundries Inc. Air gaps formed by porous silicon removal
DE102019108754A1 (de) 2019-03-06 2020-09-10 Infineon Technologies Ag Halbleitervorrichtung mit einem porösen bereich, waferverbundstruktur und verfahren zum herstellen einerhalbleitervorrichtung
CN112885938B (zh) * 2019-11-29 2022-06-14 山东浪潮华光光电子股份有限公司 一种银基键合的反极性GaAs基AlGaInP红光LED芯片的制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
WO1981002948A1 (en) 1980-04-10 1981-10-15 Massachusetts Inst Technology Methods of producing sheets of crystalline material and devices made therefrom
US4778478A (en) * 1981-11-16 1988-10-18 University Of Delaware Method of making thin film photovoltaic solar cell
JPS62171167A (ja) * 1986-01-23 1987-07-28 Mitsubishi Electric Corp 太陽電池の製造方法
JPS63160384A (ja) * 1986-12-24 1988-07-04 Mitsubishi Electric Corp ＧａＡｓ太陽電池の製造方法
JPS63233564A (ja) * 1987-03-23 1988-09-29 Canon Inc 接合型トランジスタの製造法
DE69133359T2 (de) 1990-08-03 2004-12-16 Canon K.K. Verfahren zur Herstellung eines SOI-Substrats
JP2608351B2 (ja) 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
JPH0521388A (ja) * 1991-07-12 1993-01-29 Fujitsu Ltd 半導体装置の製造方法
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3191972B2 (ja) * 1992-01-31 2001-07-23 キヤノン株式会社 半導体基板の作製方法及び半導体基板
JP3261685B2 (ja) * 1992-01-31 2002-03-04 キヤノン株式会社 半導体素子基体及びその作製方法
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
JP2943126B2 (ja) 1992-07-23 1999-08-30 キヤノン株式会社 太陽電池及びその製造方法
JP3212725B2 (ja) 1992-12-28 2001-09-25 キヤノン株式会社 液相成長法および液相成長装置
US5391257A (en) * 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
US5840610A (en) * 1997-01-16 1998-11-24 Advanced Micro Devices, Inc. Enhanced oxynitride gate dielectrics using NF3 gas

Also Published As

Publication number Publication date
AU4926897A (en) 1998-07-02
CN1156027C (zh) 2004-06-30
KR100345624B1 (ko) 2002-09-18
CN1192055A (zh) 1998-09-02
CN1312781C (zh) 2007-04-25
EP0851513B1 (de) 2007-11-21
EP0851513A2 (de) 1998-07-01
CN1516293A (zh) 2004-07-28
KR19980064747A (ko) 1998-10-07
US6190937B1 (en) 2001-02-20
AU739882B2 (en) 2001-10-25
EP0851513A3 (de) 1999-11-03
DE69738307T2 (de) 2008-10-02

Similar Documents

Publication Publication Date Title
DE69738307D1 (de) Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle
DE69534938D1 (de) Photovoltaisches Bauelement und Herstellungsverfahren
DE69633214D1 (de) Herstellungsverfahren einer Leistungshalbleiteranordnung und Leiterrahmen
DE69734183D1 (de) Sonnenzelle und Herstellungsverfahren
DE69637881D1 (de) Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren dazu
DE69525153D1 (de) Verbesserte energiespeichereinrichtung und herstellungsverfahren
KR930701838A (ko) 태양전지와 그 제조방법
DE69534709D1 (de) Herstellungsverfahren einer Halbleiteranordnung
KR960009110A (ko) 반도체 장치 및 그 제조방법
DE69534582D1 (de) Photovoltaisches Bauelement, Elektrodenstruktur desselben und Herstellungsverfahren
DE69533233D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
KR950034612A (ko) 반도체 구조물 및 그 제조 방법
DE69217287D1 (de) Photovoltische Vorrichtung mit mehreren Übergängen und Herstellungsverfahren
DE69527330T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69738342D1 (de) Herstellungsverfahren einer Anordnung mit einem Verbindungshalbleiter-Kristall und Herstellungsverfahren einer Verbindungshalbleiterschichten-Struktur
KR960009107A (ko) 반도체장치와 그 제조방법
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69632939D1 (de) Solarzelle mit integrierter Umleitungsdiode und Herstellungsverfahren
DE69826161D1 (de) Photovoltaische Vorrichtung, photoelektrischer Wandler und Verfahren zu deren Herstellung
DE69634289D1 (de) Herstellungsverfahren einer Halbleitervorrichtung
KR960015900A (ko) 반도체 장치 및 그 제조방법
DE69531075T2 (de) Sonnenzelle und Herstellungsverfahren
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69738012D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE69706910T2 (de) Herstellungsverfahren einer T-förmigen Gate-Elektrode in einem Halbleiterbauelement, und die T-förmige Gate-Elektrode

Legal Events

Date Code Title Description
8364 No opposition during term of opposition