DE69729927D1 - Bipolartransistor mit einem nicht homogenen Emitter in einer BICMOS integrierter Schaltung - Google Patents

Bipolartransistor mit einem nicht homogenen Emitter in einer BICMOS integrierter Schaltung

Info

Publication number
DE69729927D1
DE69729927D1 DE69729927T DE69729927T DE69729927D1 DE 69729927 D1 DE69729927 D1 DE 69729927D1 DE 69729927 T DE69729927 T DE 69729927T DE 69729927 T DE69729927 T DE 69729927T DE 69729927 D1 DE69729927 D1 DE 69729927D1
Authority
DE
Germany
Prior art keywords
integrated circuit
bipolar transistor
bicmos integrated
homogeneous emitter
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69729927T
Other languages
English (en)
Other versions
DE69729927T2 (de
Inventor
Yvon Gris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69729927D1 publication Critical patent/DE69729927D1/de
Application granted granted Critical
Publication of DE69729927T2 publication Critical patent/DE69729927T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69729927T 1996-11-19 1997-11-18 Bipolartransistor mit einem nicht homogenen Emitter in einer BICMOS integrierter Schaltung Expired - Lifetime DE69729927T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9614409A FR2756100B1 (fr) 1996-11-19 1996-11-19 Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR9614409 1996-11-19

Publications (2)

Publication Number Publication Date
DE69729927D1 true DE69729927D1 (de) 2004-08-26
DE69729927T2 DE69729927T2 (de) 2005-08-25

Family

ID=9497993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69729927T Expired - Lifetime DE69729927T2 (de) 1996-11-19 1997-11-18 Bipolartransistor mit einem nicht homogenen Emitter in einer BICMOS integrierter Schaltung

Country Status (5)

Country Link
US (1) US6180442B1 (de)
EP (1) EP0843350B1 (de)
JP (1) JP3132447B2 (de)
DE (1) DE69729927T2 (de)
FR (1) FR2756100B1 (de)

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FR2790867B1 (fr) * 1999-03-12 2001-11-16 St Microelectronics Sa Procede de fabrication de transistor bipolaire
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US6492237B2 (en) * 2001-02-12 2002-12-10 Maxim Integrated Products, Inc. Method of forming an NPN device
DE10134089A1 (de) * 2001-07-13 2003-01-30 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors mit Polysiliziumemitter
DE10159414A1 (de) * 2001-12-04 2003-06-18 Infineon Technologies Ag Bipolar-Transistor und Verfahren zum Herstellen desselben
US6767798B2 (en) * 2002-04-09 2004-07-27 Maxim Integrated Products, Inc. Method of forming self-aligned NPN transistor with raised extrinsic base
US6803289B1 (en) * 2002-06-28 2004-10-12 Cypress Semiconductor Corp. Bipolar transistor and method for making the same
JP5283916B2 (ja) * 2008-02-01 2013-09-04 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置の製造方法
DE102009032854B4 (de) * 2009-07-13 2015-07-23 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung von Bipolartransistorstrukturen in einem Halbleiterprozess
FR2986633B1 (fr) * 2012-02-08 2014-09-05 St Microelectronics Rousset Dispositif de detection d'une attaque par laser dans une puce de circuit integre
CN104882409B (zh) * 2014-02-27 2017-10-31 北大方正集团有限公司 一种具有集成电容的射频横向双扩散功率器件的制造方法

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Also Published As

Publication number Publication date
EP0843350B1 (de) 2004-07-21
JP3132447B2 (ja) 2001-02-05
DE69729927T2 (de) 2005-08-25
US6180442B1 (en) 2001-01-30
FR2756100A1 (fr) 1998-05-22
EP0843350A1 (de) 1998-05-20
FR2756100B1 (fr) 1999-02-12
JPH10163224A (ja) 1998-06-19

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Legal Events

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