DE69221440D1 - Harzverkapselte Halbleiteranordnung - Google Patents
Harzverkapselte HalbleiteranordnungInfo
- Publication number
- DE69221440D1 DE69221440D1 DE69221440T DE69221440T DE69221440D1 DE 69221440 D1 DE69221440 D1 DE 69221440D1 DE 69221440 T DE69221440 T DE 69221440T DE 69221440 T DE69221440 T DE 69221440T DE 69221440 D1 DE69221440 D1 DE 69221440D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- encapsulated semiconductor
- resin encapsulated
- resin
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14065—Positioning or centering articles in the mould
- B29C45/14073—Positioning or centering articles in the mould using means being retractable during injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14065—Positioning or centering articles in the mould
- B29C2045/14147—Positioning or centering articles in the mould using pins or needles penetrating through the insert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI913266A IT1252624B (it) | 1991-12-05 | 1991-12-05 | Dispositivo semiconduttore incapsulato in resina e elettricamente isolato di migliorate caratteristiche di isolamento,e relativo processo di fabbricazione |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69221440D1 true DE69221440D1 (de) | 1997-09-11 |
DE69221440T2 DE69221440T2 (de) | 1998-01-29 |
Family
ID=11361268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69221440T Expired - Fee Related DE69221440T2 (de) | 1991-12-05 | 1992-11-27 | Harzverkapselte Halbleiteranordnung |
Country Status (5)
Country | Link |
---|---|
US (2) | US5514913A (de) |
EP (1) | EP0545487B1 (de) |
JP (1) | JP3338490B2 (de) |
DE (1) | DE69221440T2 (de) |
IT (1) | IT1252624B (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4340862C2 (de) * | 1993-12-01 | 2002-04-11 | Vishay Semiconductor Gmbh | Vergießvorrichtung zum Herstellen von optoelektronischen Bauelementen |
JPH08204099A (ja) * | 1995-01-31 | 1996-08-09 | Rohm Co Ltd | 半導体装置の構造及び形成方法 |
JP3389775B2 (ja) * | 1995-05-19 | 2003-03-24 | 株式会社デンソー | インサート品成形方法およびインサート品成形装置 |
US5793613A (en) * | 1995-12-29 | 1998-08-11 | Sgs-Thomson Microelectronics S.R.1. | Heat-dissipating and supporting structure for a plastic package with a fully insulated heat sink for an electronic device |
EP0782184A1 (de) * | 1995-12-29 | 1997-07-02 | STMicroelectronics S.r.l. | Wärmesenke- und Trägerstruktur für eine Packung |
DE69627643D1 (de) * | 1996-06-28 | 2003-05-28 | St Microelectronics Srl | Verfahren zur Herstellung einer Plastikpackung für eine elektronische Anordnung mit vollständig isolierter Wärmesenke |
JP2781783B2 (ja) * | 1996-07-30 | 1998-07-30 | 山形日本電気株式会社 | 半導体装置用パッケージ |
DE10023208A1 (de) * | 2000-05-12 | 2001-11-15 | Alstom Power Nv | Isolierung von Statorwicklungen im Spritzgussverfahren |
US6365434B1 (en) | 2000-06-28 | 2002-04-02 | Micron Technology, Inc. | Method and apparatus for reduced flash encapsulation of microelectronic devices |
EP1421837B1 (de) * | 2001-08-10 | 2011-05-04 | Black & Decker Inc. | Elektrisch isoliertes modul |
FR2844219B1 (fr) * | 2002-09-09 | 2004-10-22 | Valeo Electronique Sys Liaison | Moule de surmoulage |
US7109064B2 (en) * | 2003-12-08 | 2006-09-19 | Semiconductor Components Industries, L.L.C. | Method of forming a semiconductor package and leadframe therefor |
WO2007010315A2 (en) * | 2005-07-20 | 2007-01-25 | Infineon Technologies Ag | Leadframe strip and mold apparatus for an electronic component and method of encapsulating an electronic component |
DE112005003614B4 (de) * | 2005-07-28 | 2014-08-21 | Infineon Technologies Ag | Halbleiterbaugruppe für ein Schaltnetzteil und Verfahren zu dessen Montage |
WO2007074352A1 (en) * | 2005-12-29 | 2007-07-05 | Infineon Technologies Ag | Electronic component and a method of fabricating an electronic component |
CA2660286A1 (en) | 2006-08-09 | 2008-02-21 | Homestead Clinical Corporation | Organ-specific proteins and methods of their use |
US7875962B2 (en) * | 2007-10-15 | 2011-01-25 | Power Integrations, Inc. | Package for a power semiconductor device |
US8067841B2 (en) * | 2008-02-25 | 2011-11-29 | Infineon Technologies Ag | Semiconductor devices having a resin with warpage compensated surfaces |
US7839004B2 (en) * | 2008-07-30 | 2010-11-23 | Sanyo Electric Co., Ltd. | Semiconductor device, semiconductor module, method for manufacturing semiconductor device, and lead frame |
JP2010103279A (ja) * | 2008-10-23 | 2010-05-06 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
DE102008061617A1 (de) * | 2008-12-11 | 2010-06-17 | Trw Automotive Gmbh | Verfahren und Werkzeug zur Herstellung eines elektronischen Bauteils mit einem kunststoffumspritzten Träger |
CN102230991B (zh) * | 2009-10-23 | 2013-01-09 | 鸿富锦精密工业(深圳)有限公司 | 光纤耦合连接器 |
CN102762352B (zh) * | 2009-11-11 | 2015-11-25 | 巴鲁夫公司 | 用于注射模制物体外壳的方法、物体以及用于注射模制的设备 |
JP5549491B2 (ja) * | 2010-09-06 | 2014-07-16 | 日立金属株式会社 | バスバーモジュールの製造方法、及びバスバーモジュール |
US20160277017A1 (en) * | 2011-09-13 | 2016-09-22 | Fsp Technology Inc. | Snubber circuit |
JP6162643B2 (ja) | 2014-05-21 | 2017-07-12 | 三菱電機株式会社 | 半導体装置 |
US10232531B1 (en) * | 2014-07-08 | 2019-03-19 | Verily Life Sciences Llc | Methods and apparatus for forming a polymer layer around a structure using a plurality of protrusions |
FR3046903B1 (fr) * | 2016-01-19 | 2019-08-16 | Valeo Comfort And Driving Assistance | Dispositif electronique etanche et son procede d'obtention |
JP6745645B2 (ja) * | 2016-05-25 | 2020-08-26 | オリンパス株式会社 | インサート成形方法 |
CN106601714A (zh) * | 2017-01-25 | 2017-04-26 | 长电科技(宿迁)有限公司 | 一种活动顶针内绝缘封装结构及其工艺方法 |
JP6448712B2 (ja) * | 2017-06-15 | 2019-01-09 | 三菱電機株式会社 | 半導体装置 |
JP6888525B2 (ja) * | 2017-11-06 | 2021-06-16 | 株式会社デンソー | 通電部材モジュールの製造方法 |
ES2940074T3 (es) | 2020-05-26 | 2023-05-03 | Premo Sa | Antena de baja frecuencia de largo alcance |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3715423A (en) * | 1971-01-25 | 1973-02-06 | Motorola Inc | Plastic encapsulation of semiconductor devices |
JPS5238885A (en) * | 1975-09-22 | 1977-03-25 | Nec Home Electronics Ltd | Method for production of semiconductor device |
JPS5565450A (en) * | 1978-11-10 | 1980-05-16 | Hitachi Ltd | Resin-mold type semiconductor device |
US4266267A (en) * | 1979-11-19 | 1981-05-05 | General Electric Company | Mounting arrangement for transistors and the like |
WO1982003294A1 (en) * | 1981-03-23 | 1982-09-30 | Inc Motorola | Semiconductor device including plateless package |
JPS5917273A (ja) * | 1982-07-20 | 1984-01-28 | Nec Corp | 樹脂封止半導体装置 |
GB8308751D0 (en) * | 1983-03-30 | 1983-05-11 | Era Patents Ltd | Mounting of semiconductor devices |
JPS6156420A (ja) * | 1984-07-31 | 1986-03-22 | Sanken Electric Co Ltd | 樹脂封止形半導体装置の製造方法 |
JPS6180845A (ja) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | 半導体装置 |
JPS61102040A (ja) * | 1984-10-25 | 1986-05-20 | Sanken Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPS61219144A (ja) * | 1985-03-25 | 1986-09-29 | Sanken Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPS60242649A (ja) * | 1985-03-29 | 1985-12-02 | Hitachi Ltd | 樹脂封止型半導体装置 |
JPS6193652A (ja) * | 1985-09-06 | 1986-05-12 | Hitachi Ltd | 樹脂封止型半導体装置 |
JPS62154656A (ja) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | 樹脂封止型半導体装置の製造方法 |
EP0257681A3 (de) | 1986-08-27 | 1990-02-07 | STMicroelectronics S.r.l. | Verfahren zur Herstellung von in Kunststoff eingeschmolzenen Halbleiterbauelementen und damit hergestellte Bauelemente |
JP2507343B2 (ja) * | 1986-09-08 | 1996-06-12 | 株式会社東芝 | 樹脂封止型半導体装置 |
JPS6378558A (ja) * | 1986-09-22 | 1988-04-08 | Hitachi Ltd | 電子装置 |
FR2607338A1 (fr) * | 1986-11-21 | 1988-05-27 | Eurotechnique Sa | Circuit de commutation de tension en technologie mos |
JPS63170949A (ja) * | 1987-01-09 | 1988-07-14 | Fuji Electric Co Ltd | 半導体装置 |
JPS63208255A (ja) * | 1987-02-25 | 1988-08-29 | Hitachi Ltd | 電子装置 |
JPS63213362A (ja) * | 1987-02-27 | 1988-09-06 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JPS6442844A (en) * | 1987-08-10 | 1989-02-15 | Fuji Electric Co Ltd | Lead frame for semiconductor device |
JPH01258452A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | 樹脂封止半導体装置 |
JPH01315147A (ja) * | 1989-04-07 | 1989-12-20 | Sanken Electric Co Ltd | 樹脂封止形半導体装置の製造方法 |
JPH02268457A (ja) * | 1989-04-10 | 1990-11-02 | Nec Corp | 樹脂封止型半導体装置 |
JPH0353551A (ja) * | 1989-07-21 | 1991-03-07 | Nec Corp | 絶縁型半導体装置用放熱板 |
JP2755440B2 (ja) * | 1989-07-28 | 1998-05-20 | 関西日本電気株式会社 | 樹脂モールド型半導体装置及び樹脂モールド装置 |
JPH03108744A (ja) * | 1989-09-22 | 1991-05-08 | Toshiba Corp | 樹脂封止型半導体装置 |
US5105259A (en) * | 1990-09-28 | 1992-04-14 | Motorola, Inc. | Thermally enhanced semiconductor device utilizing a vacuum to ultimately enhance thermal dissipation |
-
1991
- 1991-12-05 IT ITMI913266A patent/IT1252624B/it active IP Right Grant
-
1992
- 1992-11-25 JP JP31519692A patent/JP3338490B2/ja not_active Expired - Fee Related
- 1992-11-27 EP EP92203676A patent/EP0545487B1/de not_active Expired - Lifetime
- 1992-11-27 DE DE69221440T patent/DE69221440T2/de not_active Expired - Fee Related
- 1992-12-07 US US07/987,490 patent/US5514913A/en not_active Expired - Lifetime
-
1995
- 1995-02-06 US US08/384,753 patent/US5766985A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0545487A3 (en) | 1994-06-08 |
JPH05235074A (ja) | 1993-09-10 |
ITMI913266A0 (it) | 1991-12-05 |
US5766985A (en) | 1998-06-16 |
DE69221440T2 (de) | 1998-01-29 |
JP3338490B2 (ja) | 2002-10-28 |
EP0545487A2 (de) | 1993-06-09 |
US5514913A (en) | 1996-05-07 |
ITMI913266A1 (it) | 1993-06-05 |
IT1252624B (it) | 1995-06-19 |
EP0545487B1 (de) | 1997-08-06 |
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