DE69221440D1 - Harzverkapselte Halbleiteranordnung - Google Patents

Harzverkapselte Halbleiteranordnung

Info

Publication number
DE69221440D1
DE69221440D1 DE69221440T DE69221440T DE69221440D1 DE 69221440 D1 DE69221440 D1 DE 69221440D1 DE 69221440 T DE69221440 T DE 69221440T DE 69221440 T DE69221440 T DE 69221440T DE 69221440 D1 DE69221440 D1 DE 69221440D1
Authority
DE
Germany
Prior art keywords
semiconductor device
encapsulated semiconductor
resin encapsulated
resin
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69221440T
Other languages
English (en)
Other versions
DE69221440T2 (de
Inventor
Marcantonio Mangiagli
Rosario Pogliese
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Publication of DE69221440D1 publication Critical patent/DE69221440D1/de
Application granted granted Critical
Publication of DE69221440T2 publication Critical patent/DE69221440T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14065Positioning or centering articles in the mould
    • B29C45/14073Positioning or centering articles in the mould using means being retractable during injection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14065Positioning or centering articles in the mould
    • B29C2045/14147Positioning or centering articles in the mould using pins or needles penetrating through the insert
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • H01L2924/13033TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
DE69221440T 1991-12-05 1992-11-27 Harzverkapselte Halbleiteranordnung Expired - Fee Related DE69221440T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI913266A IT1252624B (it) 1991-12-05 1991-12-05 Dispositivo semiconduttore incapsulato in resina e elettricamente isolato di migliorate caratteristiche di isolamento,e relativo processo di fabbricazione

Publications (2)

Publication Number Publication Date
DE69221440D1 true DE69221440D1 (de) 1997-09-11
DE69221440T2 DE69221440T2 (de) 1998-01-29

Family

ID=11361268

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221440T Expired - Fee Related DE69221440T2 (de) 1991-12-05 1992-11-27 Harzverkapselte Halbleiteranordnung

Country Status (5)

Country Link
US (2) US5514913A (de)
EP (1) EP0545487B1 (de)
JP (1) JP3338490B2 (de)
DE (1) DE69221440T2 (de)
IT (1) IT1252624B (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4340862C2 (de) * 1993-12-01 2002-04-11 Vishay Semiconductor Gmbh Vergießvorrichtung zum Herstellen von optoelektronischen Bauelementen
JPH08204099A (ja) * 1995-01-31 1996-08-09 Rohm Co Ltd 半導体装置の構造及び形成方法
JP3389775B2 (ja) * 1995-05-19 2003-03-24 株式会社デンソー インサート品成形方法およびインサート品成形装置
US5793613A (en) * 1995-12-29 1998-08-11 Sgs-Thomson Microelectronics S.R.1. Heat-dissipating and supporting structure for a plastic package with a fully insulated heat sink for an electronic device
EP0782184A1 (de) * 1995-12-29 1997-07-02 STMicroelectronics S.r.l. Wärmesenke- und Trägerstruktur für eine Packung
DE69627643D1 (de) * 1996-06-28 2003-05-28 St Microelectronics Srl Verfahren zur Herstellung einer Plastikpackung für eine elektronische Anordnung mit vollständig isolierter Wärmesenke
JP2781783B2 (ja) * 1996-07-30 1998-07-30 山形日本電気株式会社 半導体装置用パッケージ
DE10023208A1 (de) * 2000-05-12 2001-11-15 Alstom Power Nv Isolierung von Statorwicklungen im Spritzgussverfahren
US6365434B1 (en) 2000-06-28 2002-04-02 Micron Technology, Inc. Method and apparatus for reduced flash encapsulation of microelectronic devices
EP1421837B1 (de) * 2001-08-10 2011-05-04 Black & Decker Inc. Elektrisch isoliertes modul
FR2844219B1 (fr) * 2002-09-09 2004-10-22 Valeo Electronique Sys Liaison Moule de surmoulage
US7109064B2 (en) * 2003-12-08 2006-09-19 Semiconductor Components Industries, L.L.C. Method of forming a semiconductor package and leadframe therefor
WO2007010315A2 (en) * 2005-07-20 2007-01-25 Infineon Technologies Ag Leadframe strip and mold apparatus for an electronic component and method of encapsulating an electronic component
DE112005003614B4 (de) * 2005-07-28 2014-08-21 Infineon Technologies Ag Halbleiterbaugruppe für ein Schaltnetzteil und Verfahren zu dessen Montage
WO2007074352A1 (en) * 2005-12-29 2007-07-05 Infineon Technologies Ag Electronic component and a method of fabricating an electronic component
CA2660286A1 (en) 2006-08-09 2008-02-21 Homestead Clinical Corporation Organ-specific proteins and methods of their use
US7875962B2 (en) * 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
US8067841B2 (en) * 2008-02-25 2011-11-29 Infineon Technologies Ag Semiconductor devices having a resin with warpage compensated surfaces
US7839004B2 (en) * 2008-07-30 2010-11-23 Sanyo Electric Co., Ltd. Semiconductor device, semiconductor module, method for manufacturing semiconductor device, and lead frame
JP2010103279A (ja) * 2008-10-23 2010-05-06 Shindengen Electric Mfg Co Ltd 半導体装置
DE102008061617A1 (de) * 2008-12-11 2010-06-17 Trw Automotive Gmbh Verfahren und Werkzeug zur Herstellung eines elektronischen Bauteils mit einem kunststoffumspritzten Träger
CN102230991B (zh) * 2009-10-23 2013-01-09 鸿富锦精密工业(深圳)有限公司 光纤耦合连接器
CN102762352B (zh) * 2009-11-11 2015-11-25 巴鲁夫公司 用于注射模制物体外壳的方法、物体以及用于注射模制的设备
JP5549491B2 (ja) * 2010-09-06 2014-07-16 日立金属株式会社 バスバーモジュールの製造方法、及びバスバーモジュール
US20160277017A1 (en) * 2011-09-13 2016-09-22 Fsp Technology Inc. Snubber circuit
JP6162643B2 (ja) 2014-05-21 2017-07-12 三菱電機株式会社 半導体装置
US10232531B1 (en) * 2014-07-08 2019-03-19 Verily Life Sciences Llc Methods and apparatus for forming a polymer layer around a structure using a plurality of protrusions
FR3046903B1 (fr) * 2016-01-19 2019-08-16 Valeo Comfort And Driving Assistance Dispositif electronique etanche et son procede d'obtention
JP6745645B2 (ja) * 2016-05-25 2020-08-26 オリンパス株式会社 インサート成形方法
CN106601714A (zh) * 2017-01-25 2017-04-26 长电科技(宿迁)有限公司 一种活动顶针内绝缘封装结构及其工艺方法
JP6448712B2 (ja) * 2017-06-15 2019-01-09 三菱電機株式会社 半導体装置
JP6888525B2 (ja) * 2017-11-06 2021-06-16 株式会社デンソー 通電部材モジュールの製造方法
ES2940074T3 (es) 2020-05-26 2023-05-03 Premo Sa Antena de baja frecuencia de largo alcance

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715423A (en) * 1971-01-25 1973-02-06 Motorola Inc Plastic encapsulation of semiconductor devices
JPS5238885A (en) * 1975-09-22 1977-03-25 Nec Home Electronics Ltd Method for production of semiconductor device
JPS5565450A (en) * 1978-11-10 1980-05-16 Hitachi Ltd Resin-mold type semiconductor device
US4266267A (en) * 1979-11-19 1981-05-05 General Electric Company Mounting arrangement for transistors and the like
WO1982003294A1 (en) * 1981-03-23 1982-09-30 Inc Motorola Semiconductor device including plateless package
JPS5917273A (ja) * 1982-07-20 1984-01-28 Nec Corp 樹脂封止半導体装置
GB8308751D0 (en) * 1983-03-30 1983-05-11 Era Patents Ltd Mounting of semiconductor devices
JPS6156420A (ja) * 1984-07-31 1986-03-22 Sanken Electric Co Ltd 樹脂封止形半導体装置の製造方法
JPS6180845A (ja) * 1984-09-28 1986-04-24 Hitachi Ltd 半導体装置
JPS61102040A (ja) * 1984-10-25 1986-05-20 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPS61219144A (ja) * 1985-03-25 1986-09-29 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPS60242649A (ja) * 1985-03-29 1985-12-02 Hitachi Ltd 樹脂封止型半導体装置
JPS6193652A (ja) * 1985-09-06 1986-05-12 Hitachi Ltd 樹脂封止型半導体装置
JPS62154656A (ja) * 1985-12-27 1987-07-09 Toshiba Corp 樹脂封止型半導体装置の製造方法
EP0257681A3 (de) 1986-08-27 1990-02-07 STMicroelectronics S.r.l. Verfahren zur Herstellung von in Kunststoff eingeschmolzenen Halbleiterbauelementen und damit hergestellte Bauelemente
JP2507343B2 (ja) * 1986-09-08 1996-06-12 株式会社東芝 樹脂封止型半導体装置
JPS6378558A (ja) * 1986-09-22 1988-04-08 Hitachi Ltd 電子装置
FR2607338A1 (fr) * 1986-11-21 1988-05-27 Eurotechnique Sa Circuit de commutation de tension en technologie mos
JPS63170949A (ja) * 1987-01-09 1988-07-14 Fuji Electric Co Ltd 半導体装置
JPS63208255A (ja) * 1987-02-25 1988-08-29 Hitachi Ltd 電子装置
JPS63213362A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 樹脂封止型半導体装置
JPS6442844A (en) * 1987-08-10 1989-02-15 Fuji Electric Co Ltd Lead frame for semiconductor device
JPH01258452A (ja) * 1988-04-08 1989-10-16 Nec Corp 樹脂封止半導体装置
JPH01315147A (ja) * 1989-04-07 1989-12-20 Sanken Electric Co Ltd 樹脂封止形半導体装置の製造方法
JPH02268457A (ja) * 1989-04-10 1990-11-02 Nec Corp 樹脂封止型半導体装置
JPH0353551A (ja) * 1989-07-21 1991-03-07 Nec Corp 絶縁型半導体装置用放熱板
JP2755440B2 (ja) * 1989-07-28 1998-05-20 関西日本電気株式会社 樹脂モールド型半導体装置及び樹脂モールド装置
JPH03108744A (ja) * 1989-09-22 1991-05-08 Toshiba Corp 樹脂封止型半導体装置
US5105259A (en) * 1990-09-28 1992-04-14 Motorola, Inc. Thermally enhanced semiconductor device utilizing a vacuum to ultimately enhance thermal dissipation

Also Published As

Publication number Publication date
EP0545487A3 (en) 1994-06-08
JPH05235074A (ja) 1993-09-10
ITMI913266A0 (it) 1991-12-05
US5766985A (en) 1998-06-16
DE69221440T2 (de) 1998-01-29
JP3338490B2 (ja) 2002-10-28
EP0545487A2 (de) 1993-06-09
US5514913A (en) 1996-05-07
ITMI913266A1 (it) 1993-06-05
IT1252624B (it) 1995-06-19
EP0545487B1 (de) 1997-08-06

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