JPS6442844A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPS6442844A JPS6442844A JP19931787A JP19931787A JPS6442844A JP S6442844 A JPS6442844 A JP S6442844A JP 19931787 A JP19931787 A JP 19931787A JP 19931787 A JP19931787 A JP 19931787A JP S6442844 A JPS6442844 A JP S6442844A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- bonding part
- element side
- radiating sheet
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:Not to leave any air in resin layers preventing any void or crack from occurring by a method wherein a hole or a notch for resin shifting is made in a bonding part and radiating sheet of a semiconductor element in a lead frame. CONSTITUTION:A hole 7 or a notch 8 for resin shifting is made in a bonding part and radiating sheet 1 of a semiconductor element. Consequently, even if the resin injecting speeds into the element side in wide metallic mold space wherein a thick resin layer of the bonding part and radiating sheet 1 is formed as well as into the element side in narrow metallic mold space wherein a thin resin layer of said sheet 1 is formed are different from each other, the resin can be shifted very rapidly through the hole 7 or the notch 8 in the shifting part provided in the bonding part and radiating sheet 1 in the metallic mold space. Through these procedures, the resin layers can be formed simultaneously both in the element side and the inverse element side so that the air inside the metallic space is pushed outside to prevent any void or crack from occurring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19931787A JPS6442844A (en) | 1987-08-10 | 1987-08-10 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19931787A JPS6442844A (en) | 1987-08-10 | 1987-08-10 | Lead frame for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442844A true JPS6442844A (en) | 1989-02-15 |
Family
ID=16405792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19931787A Pending JPS6442844A (en) | 1987-08-10 | 1987-08-10 | Lead frame for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442844A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0545487A3 (en) * | 1991-12-05 | 1994-06-08 | Cons Ric Microelettronica | Semiconductor device encapsulated in resin and electrically insulated having improved insulation characteristics and related manufacturing process |
-
1987
- 1987-08-10 JP JP19931787A patent/JPS6442844A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0545487A3 (en) * | 1991-12-05 | 1994-06-08 | Cons Ric Microelettronica | Semiconductor device encapsulated in resin and electrically insulated having improved insulation characteristics and related manufacturing process |
US5766985A (en) * | 1991-12-05 | 1998-06-16 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Process for encapsulating a semiconductor device having a heat sink |
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