JPS5726454A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS5726454A JPS5726454A JP10146880A JP10146880A JPS5726454A JP S5726454 A JPS5726454 A JP S5726454A JP 10146880 A JP10146880 A JP 10146880A JP 10146880 A JP10146880 A JP 10146880A JP S5726454 A JPS5726454 A JP S5726454A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- layer
- difference
- side edge
- common
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To reduce the stepwise difference on the surface of a chip by disposing the side edge of one wire within the width of the other wire or so disposing as not to have common region on the planar surface at the part parallel to the same lattice axis of the wires of the adjacent wiring layers. CONSTITUTION:The side edge 19 of the first layer wire 7' is disposed within the width of the second layer wire 8' on a lattice axis 2' at the side edge 19 at the part on which the first wire 7' is laid in X-direction. Thus, the stepwise difference between the first layer and the second layer is displaced one another in the section 10-10', and since the size of the difference becomes two steps of d1=M1+IM1- It2, d2=M2+IM2-It2 as shown, the insulating film of the side face of the step does not become thin, nor the third layer wire becomes thin at the difference. Or the parallel wires on the same lattice wire may be entirely removed without common wire. According to this configuration the stepwise difference can be prevented on the surface of the chip without losing the advantages of the common wire lattice axis on the entire wiring layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10146880A JPS5726454A (en) | 1980-07-24 | 1980-07-24 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10146880A JPS5726454A (en) | 1980-07-24 | 1980-07-24 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5726454A true JPS5726454A (en) | 1982-02-12 |
Family
ID=14301542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10146880A Pending JPS5726454A (en) | 1980-07-24 | 1980-07-24 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5726454A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213450A (en) * | 1982-06-04 | 1983-12-12 | Toshiba Corp | Structure of multilayer wiring of semiconductor device |
JPS60198845A (en) * | 1984-03-23 | 1985-10-08 | Nec Corp | Semiconductor device |
JPS633433A (en) * | 1986-06-24 | 1988-01-08 | Nec Corp | Semiconductor integrated circuit |
JP2010199386A (en) * | 2009-02-26 | 2010-09-09 | Oki Semiconductor Co Ltd | Semiconductor device |
JP2015097271A (en) * | 2005-05-13 | 2015-05-21 | 株式会社半導体エネルギー研究所 | Display device |
-
1980
- 1980-07-24 JP JP10146880A patent/JPS5726454A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213450A (en) * | 1982-06-04 | 1983-12-12 | Toshiba Corp | Structure of multilayer wiring of semiconductor device |
JPS6343895B2 (en) * | 1982-06-04 | 1988-09-01 | Tokyo Shibaura Electric Co | |
JPS60198845A (en) * | 1984-03-23 | 1985-10-08 | Nec Corp | Semiconductor device |
JPS633433A (en) * | 1986-06-24 | 1988-01-08 | Nec Corp | Semiconductor integrated circuit |
JP2015097271A (en) * | 2005-05-13 | 2015-05-21 | 株式会社半導体エネルギー研究所 | Display device |
US9412766B2 (en) | 2005-05-13 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US9972646B2 (en) | 2005-05-13 | 2018-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US10847550B2 (en) | 2005-05-13 | 2020-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US11081505B2 (en) | 2005-05-13 | 2021-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP2010199386A (en) * | 2009-02-26 | 2010-09-09 | Oki Semiconductor Co Ltd | Semiconductor device |
US9129966B2 (en) | 2009-02-26 | 2015-09-08 | Lapis Semiconductor Co., Ltd. | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2963256D1 (en) | Method for forming a laminated structure for highly integrated semiconductor devices with an insulating layer between two conductive layers | |
EP0082256A3 (en) | Method of manufacturing a semiconductor device comprising dielectric isolation regions | |
TW345728B (en) | Method of manufacturing a semiconductor device for surface mounting, and semiconductor device for surface mounting | |
EP0042175A3 (en) | Semiconductor device having a semiconductor layer formed on an insulating substrate and method for making the same | |
JPS5726454A (en) | Integrated circuit device | |
EP0234269A3 (en) | High voltage semiconductor integrated circuit | |
CA2051778A1 (en) | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby | |
EP0227189A3 (en) | Method of manufacturing a thin conductor device | |
JPS5688358A (en) | Manufacture of semiconductor device | |
JPS5721849A (en) | Semiconductor integrated circuit | |
JPS56115558A (en) | Semiconductor integrated circuit and manufacture thereof | |
JPS5513904A (en) | Semiconductor device and its manufacturing method | |
JPS6417446A (en) | Semiconductor device and manufacture thereof | |
JPS56122175A (en) | Semiconductor element | |
JPS5683959A (en) | Semiconductor device | |
JPS55151366A (en) | Fabricating method of semiconductor device | |
JPS5718354A (en) | Semiconductor integrated circuit | |
JPS57160156A (en) | Semiconductor device | |
JPS56138946A (en) | Semiconductor device | |
JPS5664467A (en) | Mos type semiconductor device | |
JPS5317286A (en) | Production of semiconductor device | |
JPS56135942A (en) | Manufacture of semiconductor device | |
DE3279117D1 (en) | Semiconductor device incorporated in a semiconductor layer formed on an insulating layer | |
EP0163795A3 (en) | A method and means for reducing signal propagation losses in very large scale integrated circuits | |
JPS5633855A (en) | Semiconductor device and its manufacture |