JPS5726454A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS5726454A
JPS5726454A JP10146880A JP10146880A JPS5726454A JP S5726454 A JPS5726454 A JP S5726454A JP 10146880 A JP10146880 A JP 10146880A JP 10146880 A JP10146880 A JP 10146880A JP S5726454 A JPS5726454 A JP S5726454A
Authority
JP
Japan
Prior art keywords
wire
layer
difference
side edge
common
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10146880A
Other languages
Japanese (ja)
Inventor
Soichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10146880A priority Critical patent/JPS5726454A/en
Publication of JPS5726454A publication Critical patent/JPS5726454A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce the stepwise difference on the surface of a chip by disposing the side edge of one wire within the width of the other wire or so disposing as not to have common region on the planar surface at the part parallel to the same lattice axis of the wires of the adjacent wiring layers. CONSTITUTION:The side edge 19 of the first layer wire 7' is disposed within the width of the second layer wire 8' on a lattice axis 2' at the side edge 19 at the part on which the first wire 7' is laid in X-direction. Thus, the stepwise difference between the first layer and the second layer is displaced one another in the section 10-10', and since the size of the difference becomes two steps of d1=M1+IM1- It2, d2=M2+IM2-It2 as shown, the insulating film of the side face of the step does not become thin, nor the third layer wire becomes thin at the difference. Or the parallel wires on the same lattice wire may be entirely removed without common wire. According to this configuration the stepwise difference can be prevented on the surface of the chip without losing the advantages of the common wire lattice axis on the entire wiring layer.
JP10146880A 1980-07-24 1980-07-24 Integrated circuit device Pending JPS5726454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10146880A JPS5726454A (en) 1980-07-24 1980-07-24 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10146880A JPS5726454A (en) 1980-07-24 1980-07-24 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5726454A true JPS5726454A (en) 1982-02-12

Family

ID=14301542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10146880A Pending JPS5726454A (en) 1980-07-24 1980-07-24 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5726454A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213450A (en) * 1982-06-04 1983-12-12 Toshiba Corp Structure of multilayer wiring of semiconductor device
JPS60198845A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor device
JPS633433A (en) * 1986-06-24 1988-01-08 Nec Corp Semiconductor integrated circuit
JP2010199386A (en) * 2009-02-26 2010-09-09 Oki Semiconductor Co Ltd Semiconductor device
JP2015097271A (en) * 2005-05-13 2015-05-21 株式会社半導体エネルギー研究所 Display device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213450A (en) * 1982-06-04 1983-12-12 Toshiba Corp Structure of multilayer wiring of semiconductor device
JPS6343895B2 (en) * 1982-06-04 1988-09-01 Tokyo Shibaura Electric Co
JPS60198845A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor device
JPS633433A (en) * 1986-06-24 1988-01-08 Nec Corp Semiconductor integrated circuit
JP2015097271A (en) * 2005-05-13 2015-05-21 株式会社半導体エネルギー研究所 Display device
US9412766B2 (en) 2005-05-13 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9972646B2 (en) 2005-05-13 2018-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US10847550B2 (en) 2005-05-13 2020-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US11081505B2 (en) 2005-05-13 2021-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2010199386A (en) * 2009-02-26 2010-09-09 Oki Semiconductor Co Ltd Semiconductor device
US9129966B2 (en) 2009-02-26 2015-09-08 Lapis Semiconductor Co., Ltd. Semiconductor device

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