JPH03108744A - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

Info

Publication number
JPH03108744A
JPH03108744A JP1247268A JP24726889A JPH03108744A JP H03108744 A JPH03108744 A JP H03108744A JP 1247268 A JP1247268 A JP 1247268A JP 24726889 A JP24726889 A JP 24726889A JP H03108744 A JPH03108744 A JP H03108744A
Authority
JP
Japan
Prior art keywords
resin
lead
leads
heat sink
encapsulant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1247268A
Other languages
English (en)
Inventor
Takao Emoto
江本　孝朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1247268A priority Critical patent/JPH03108744A/ja
Priority to US07/584,043 priority patent/US5063434A/en
Priority to EP90118124A priority patent/EP0418891B1/en
Priority to DE69027724T priority patent/DE69027724T2/de
Priority to KR1019900014985A priority patent/KR930004247B1/ko
Publication of JPH03108744A publication Critical patent/JPH03108744A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、放熱板の裏面を外装樹脂材で被覆成形した絶
縁タイプの樹脂封止型半導体装置の構造に関するもので
ある。
（従来の技術） 放熱性を重視する大電力用樹脂封止型半導体装置は、一
般に該半導体装置の放熱部を、放熱器等の外部取付部材
に密接するように取り付けて使用されることが多い。
第３図は、従来の大電力用樹脂封止型半導体装置の構造
及び外部放熱器への取付けを示す断面図である。　第３
図において、金属製フレームは、フレーム放熱板１ａと
放熱板の外部リード１ｂと、別の導出リードＩＣからな
っている。　パワー１〜ランジスタチツグ２はフレーム
放熱板１ａ上面の所定位置にＰｂ−３ｎ系半田３により
固着されており、Ａｌｌ又はＡＩ等の細線４により導出
リードＩＣに配線されている６　組み立てられたフレー
ム部品は、１〜ランスフアー成形をした樹脂体５により
要部が封止される。　図示した半導体装置は、フレーム
放熱板１ａの下面も樹脂体５に包み込よれるように成形
される絶縁タイプであって、放熱のため外部取付部材６
に直接取り付けても電気的絶縁が取れるので、マイカ板
等の余分な部材を使わすに作業性よく実装でき、電力用
半導体装置の主流となってきている。　５ａは外部取付
部材への収１寸は用ネジ孔である。
（発明が解決しようとする課題） しかしながら小型化を進めていると様々な問題が現われ
る。　例えば、外部取付部材６に取り１寸けた場合、導
出リード１ｃの樹脂体外に出ているアウターリード部と
、収イ］部材６との間隔ａは、絶縁耐圧規格によって最
低寸法が決められている。
このアウターリード部の高さａを得るなめに、導出リー
ド１Ｃは、第３図に示しなように、フレーム放熱板１ａ
の主面から上へ平行にズレるように配置しなければなら
ないという問題がある。　また、そのような上方に配置
された導出り一１〜１ｃに内部配線をする関係等から、
放熱板１ａの（主面上方寸法）／〈主面下方寸法）との
比率は、（５〜１０）　／１であるのが普通であって、
装置全体の厚さｂが制約されて小型化に限界が生しな。
（発明が解決しようとする課題） 本発明の目的は、導出リードの位置関係が装置厚さを薄
くてきなかった従来の問題点を解決するものであって、
小型化を可能とする樹脂封止型半導体装置を提供するこ
とである。
［発明の概要コ 本発明は、１５１脂封止型半導体装置において、素子電
極に細線で接続する導出リードをフレームチップが搭載
される放熱板面とほぼ同一水平面に配置して樹脂封止す
るとともに、導出リードのアウターリード部下方におい
て突出した樹脂突出部を備えた樹脂体を成形した後、該
アウターリードの導出根元から」二方に曲げ、外部取イ
」部材との絶縁スペースを確保するとともに、樹脂突出
部によって外部取付部材との表面絶縁距離を確保して、
実装上の問題を解決したものである。
（実施例） 本発明の一実施例を第１図を参照して説明する。
金属製フレームは、放熱板１１ａと、導出り一ド１］、
ｃとからなっている。　導出リードｌｌｃは一点鎖線て
示しなアウターリード部を有しており、放熱板１１ａと
導出リードｌｌｃとほぼ同一平面に配置されている。　
放熱板１１ａの主面には、半導体チップ２がＰｂ−８ｎ
系半田により固着されており、ＡＵ又はＡＩ等の細線４
て所定の導出リード１］、ｃヘホンデインク配線され、
また図示されていないが、チップの汚染保護等の必要が
ある場合には、シリコーン・エンキャップ等が施される
ことがある。
次に外装樹脂材てモールド成形し製品とするが、実施例
の封止樹脂体１５は、第３図に示した従来技術による樹
脂体５と二点において異なっている。
第一点は、放熱板１１２１の主面と導出リード１１ｃと
がほぼ同一面に配置されζいることにより、該配線のた
めのスペースが大幅に節減されて、放熱板主面上方にお
ける樹脂体厚さが薄くてき小型化が可能となる。　しか
しながら、そのままては素子の実装使用時に外装Ｊｆ２
酊部材６と導出り−ドｌｌｃとの間隔ｄが狭く、絶縁耐
圧が問題となって１史えないものが出てくる。
そこて第二点は、導出リードのアウターリード部下方に
樹脂突出部１．５ａを設けて樹脂成形するとともに、該
アウターリード部の根元がら曲げて実線１］、ｄで示し
た形状とすることである。　実線て示しなアウターリー
ド部１．１ｄとすることにより、外部取付部材６との絶
縁スペースｄを確保するものて、このときのアウターリ
ード部根元での曲げ位置は樹脂突出部１５ａの外縁より
内側であることが肝要である。　ずなわちアウターリー
ド部ｌｉｄは樹脂突出部１５ａから剥がされて曲けられ
、大きな絶縁スペースｄが得られるとともに、樹脂突出
部１５ａにおける表面絶縁距離は剥がされな樹脂突出部
」二面のｉ？［］離が加えられて長く確保されることと
なり、十分な絶縁耐圧を得ることかできる。
なお、樹脂突出部１５ａには、アウターリード部ｌｉｄ
を曲げて樹脂突出部から剥離する際に、第２図（ａ　＞
に示すように特にリードのコーナー部接着箇所から樹脂
内ヘクラック１７か生しることがあり、信顆性上問題と
なることがある。　そこて、第２図（１〕）変形例に示
すように、リードに接しない樹脂突出部の表面位置をリ
ード下面よリズラずことにより、クラックが生じても内
部に到達しない構造とすることが有効である。　また、
樹脂突出部に接するアウターリードに、例えば、シリコ
ーンラバーやテフロン等を塗布したり、表面を酸化した
りする等の剥離前処理を施すのもよい。　そしてまた、
フレームの製作時抜き方向を樹脂体と接着する側にパリ
ができないような方向とすることも効果的である。　以
上の対策により、従来あった０、５〜５％程の樹脂クラ
ック不良を皆無とすることができた。
［発明の効果コ 本発明の樹脂封止半導体装置によれば、特にフレーム放
熱面を電気的に絶縁した絶縁タイプの樹脂成形半導体装
置でありながら、フレーム放熱板主面上下の寸法（前記
したとおり従来は５〜１０：１）を同等に近づけること
ができ、結果的にフレーム放熱板上法の放熱樹脂層厚を
薄くすることが可能となり、放熱特性の大幅向上が達成
できた。
例えば、従来の放熱部樹脂層厚４００μｒｎ　ＴＰ。
２０Ｗのパワートランジスタが、本発明により樹脂厚２
５０μｍか可能となり、約Ｐｃ＝３０Ｗが得られた。　
本発明は、放熱を問題とする整流素子や集積回路素子等
半導体装置傘てにあてはまるもので、多ピンのＳＩＰ又
はＤＩＲ等の樹脂封止装置やモジュール、ＨＩＣにも応
用できる。
【図面の簡単な説明】
第１図は本発明実施例の半導体装置を示す縦断面図、第
２図（ａ　）及び（ｂ）は本発明の樹脂突出部変形例を
説明する部分断面図、第３図は従来の半導体装置を示す
縦断面図である。 ｌａ、ｌｌａ・・・フレーム放熱板、　１ｂ・・・放熱
板のリード、　ｉｃ　、ｌｌｃ　、ｌｉｄ・・・導出リ
ード部、　２・・・半導体チップ、　３・・・半田、　
４・・・配線用の細線、　５．１５・・・樹脂体、　１
５ａ・・・樹脂突出部、　６・・・外部取付部材。

Claims (1)

    【特許請求の範囲】
  1. １　フレーム放熱板と、該フレーム放熱板上に固着され
    た半導体素子と、該半導体素子の電極と電気的に配線接
    続した導出リードと、要部を封止したモールド樹脂体と
    からなる半導体装置において、該フレーム放熱板と該導
    出リードとが、実質上同一水平面に配置されて封止され
    るとともに、該モールド樹脂体が導出リード下方におい
    て突出する突出樹脂部を備えたことを特徴とする半導体
    装置。
JP1247268A 1989-09-22 1989-09-22 樹脂封止型半導体装置 Pending JPH03108744A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1247268A JPH03108744A (ja) 1989-09-22 1989-09-22 樹脂封止型半導体装置
US07/584,043 US5063434A (en) 1989-09-22 1990-09-18 Plastic molded type power semiconductor device
EP90118124A EP0418891B1 (en) 1989-09-22 1990-09-20 Moulded plastic power semiconductor device
DE69027724T DE69027724T2 (de) 1989-09-22 1990-09-20 Leistungshalbleiteranordnung mit Plastikumhüllung
KR1019900014985A KR930004247B1 (ko) 1989-09-22 1990-09-21 수지밀봉형 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1247268A JPH03108744A (ja) 1989-09-22 1989-09-22 樹脂封止型半導体装置

Publications (1)

Publication Number Publication Date
JPH03108744A true JPH03108744A (ja) 1991-05-08

Family

ID=17160946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1247268A Pending JPH03108744A (ja) 1989-09-22 1989-09-22 樹脂封止型半導体装置

Country Status (5)

Country Link
US (1) US5063434A (ja)
EP (1) EP0418891B1 (ja)
JP (1) JPH03108744A (ja)
KR (1) KR930004247B1 (ja)
DE (1) DE69027724T2 (ja)

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JP2580840B2 (ja) * 1990-05-22 1997-02-12 日本電気株式会社 半導体装置用パッケージ
DE69131784T2 (de) * 1990-07-21 2000-05-18 Mitsui Chemicals Inc Halbleiteranordnung mit einer Packung
ATE154990T1 (de) * 1991-04-10 1997-07-15 Caddock Electronics Inc Schichtwiderstand
IT1249388B (it) 1991-04-26 1995-02-23 Cons Ric Microelettronica Dispositivo a semiconduttore incapsulato in resina e completamente isolato per alte tensioni
IT1252624B (it) * 1991-12-05 1995-06-19 Cons Ric Microelettronica Dispositivo semiconduttore incapsulato in resina e elettricamente isolato di migliorate caratteristiche di isolamento,e relativo processo di fabbricazione
DE9311223U1 (de) * 1993-07-27 1993-09-09 Siemens Ag Mikrosensor mit Steckeranschluß
JP3406753B2 (ja) * 1995-11-30 2003-05-12 三菱電機株式会社 半導体装置および半導体モジュール
US6372526B1 (en) * 1998-04-06 2002-04-16 Semiconductor Components Industries Llc Method of manufacturing semiconductor components
US6262512B1 (en) * 1999-11-08 2001-07-17 Jds Uniphase Inc. Thermally actuated microelectromechanical systems including thermal isolation structures
US6791172B2 (en) * 2001-04-25 2004-09-14 General Semiconductor Of Taiwan, Ltd. Power semiconductor device manufactured using a chip-size package
US7061077B2 (en) * 2002-08-30 2006-06-13 Fairchild Semiconductor Corporation Substrate based unmolded package including lead frame structure and semiconductor die
KR101391925B1 (ko) * 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
DE102007051870A1 (de) * 2007-10-30 2009-05-07 Robert Bosch Gmbh Modulgehäuse und Verfahren zur Herstellung eines Modulgehäuses
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JPS58209147A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 樹脂封止型半導体装置
JPS6116556A (ja) * 1984-07-03 1986-01-24 Matsushita Electronics Corp 樹脂封止型半導体装置
JPS63107152A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd 樹脂封止型電子部品

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WO2020148879A1 (ja) * 2019-01-18 2020-07-23 三菱電機株式会社 半導体装置、半導体装置の製造方法及び電力変換装置
JPWO2020148879A1 (ja) * 2019-01-18 2021-09-27 三菱電機株式会社 半導体装置、半導体装置の製造方法及び電力変換装置

Also Published As

Publication number Publication date
DE69027724D1 (de) 1996-08-14
EP0418891A3 (en) 1992-04-08
EP0418891B1 (en) 1996-07-10
US5063434A (en) 1991-11-05
KR910007116A (ko) 1991-04-30
DE69027724T2 (de) 1996-12-05
KR930004247B1 (ko) 1993-05-22
EP0418891A2 (en) 1991-03-27

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