DE69033023D1 - EEPROM mit den Ladungsverlusten der Speicherzellen folgenden Referenzzellen - Google Patents

EEPROM mit den Ladungsverlusten der Speicherzellen folgenden Referenzzellen

Info

Publication number
DE69033023D1
DE69033023D1 DE69033023T DE69033023T DE69033023D1 DE 69033023 D1 DE69033023 D1 DE 69033023D1 DE 69033023 T DE69033023 T DE 69033023T DE 69033023 T DE69033023 T DE 69033023T DE 69033023 D1 DE69033023 D1 DE 69033023D1
Authority
DE
Germany
Prior art keywords
eeprom
following reference
memory cells
charge losses
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033023T
Other languages
English (en)
Other versions
DE69033023T2 (de
Inventor
Sanjay Mehrotra
Eliyahou Harari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26990766&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69033023(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE69033023D1 publication Critical patent/DE69033023D1/de
Publication of DE69033023T2 publication Critical patent/DE69033023T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5631—Concurrent multilevel reading of more than one cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5645—Multilevel memory with current-mirror arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE69033023T 1989-04-13 1990-04-12 EEPROM mit den Ladungsverlusten der Speicherzellen folgenden Referenzzellen Expired - Fee Related DE69033023T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33757989A 1989-04-13 1989-04-13
US07508273 US5172338B1 (en) 1989-04-13 1990-04-11 Multi-state eeprom read and write circuits and techniques

Publications (2)

Publication Number Publication Date
DE69033023D1 true DE69033023D1 (de) 1999-04-29
DE69033023T2 DE69033023T2 (de) 1999-09-02

Family

ID=26990766

Family Applications (4)

Application Number Title Priority Date Filing Date
DE69033927T Expired - Lifetime DE69033927T2 (de) 1989-04-13 1990-04-12 Speicher-Abtastschaltkreis, der Vielfachstromspiegelschaltung verwendet
DE69033862T Expired - Lifetime DE69033862T2 (de) 1989-04-13 1990-04-12 Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung
DE69033023T Expired - Fee Related DE69033023T2 (de) 1989-04-13 1990-04-12 EEPROM mit den Ladungsverlusten der Speicherzellen folgenden Referenzzellen
DE69030959T Expired - Lifetime DE69030959T2 (de) 1989-04-13 1990-04-12 EEPROM mit Referenzzelle

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69033927T Expired - Lifetime DE69033927T2 (de) 1989-04-13 1990-04-12 Speicher-Abtastschaltkreis, der Vielfachstromspiegelschaltung verwendet
DE69033862T Expired - Lifetime DE69033862T2 (de) 1989-04-13 1990-04-12 Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69030959T Expired - Lifetime DE69030959T2 (de) 1989-04-13 1990-04-12 EEPROM mit Referenzzelle

Country Status (5)

Country Link
US (1) US5172338B1 (de)
EP (4) EP0778582B1 (de)
JP (1) JPH04507320A (de)
DE (4) DE69033927T2 (de)
WO (1) WO1990012400A1 (de)

Families Citing this family (740)

* Cited by examiner, † Cited by third party
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EP0539358A1 (de) 1993-05-05
EP0756287B1 (de) 2002-03-06
EP0778582B1 (de) 2001-11-14
DE69033023T2 (de) 1999-09-02
DE69033927T2 (de) 2002-09-12
WO1990012400A1 (en) 1990-10-18
EP0778582A2 (de) 1997-06-11
EP0778582A3 (de) 1998-11-18
DE69030959D1 (de) 1997-07-24
US5172338A (en) 1992-12-15
EP0774759A1 (de) 1997-05-21
EP0756287A2 (de) 1997-01-29
EP0774759B1 (de) 1999-03-24
DE69033862D1 (de) 2001-12-20
US5172338B1 (en) 1997-07-08
DE69033927D1 (de) 2002-04-11
EP0539358A4 (de) 1995-01-11
DE69030959T2 (de) 1997-11-27
EP0756287A3 (de) 1998-11-25
EP0539358B1 (de) 1997-06-18
JPH04507320A (ja) 1992-12-17
DE69033862T2 (de) 2002-06-13

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