FR3039921B1 - Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom - Google Patents
Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom Download PDFInfo
- Publication number
- FR3039921B1 FR3039921B1 FR1557576A FR1557576A FR3039921B1 FR 3039921 B1 FR3039921 B1 FR 3039921B1 FR 1557576 A FR1557576 A FR 1557576A FR 1557576 A FR1557576 A FR 1557576A FR 3039921 B1 FR3039921 B1 FR 3039921B1
- Authority
- FR
- France
- Prior art keywords
- write operation
- memory cell
- programming
- controlling
- data write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
Abstract
Une opération d'écriture d'au moins une donnée dans au moins une cellule-mémoire du type mémoire morte électriquement programmable et effaçable, comprend au moins une étape d'effacement ou de programmation de ladite cellule par une impulsion correspondante d'effacement ou de programmation. On contrôle le bon ou le mauvais déroulement de l'opération d'écriture par une analyse de la forme de ladite impulsion d'effacement ou de programmation (IMPB) au cours de l'étape correspondante d'effacement ou de programmation, le résultat de cette analyse étant représentatif d'un déroulement correct ou non de l'opération d'écriture.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1557576A FR3039921B1 (fr) | 2015-08-06 | 2015-08-06 | Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom |
CN201610099467.5A CN106448731B (zh) | 2015-08-06 | 2016-02-23 | 用于管理eeprom存储器单元中的数据的写入周期的方法和系统 |
CN201910936527.8A CN110706730A (zh) | 2015-08-06 | 2016-02-23 | 用于管理eeprom存储器单元中的数据的写入周期的方法和系统 |
US15/055,552 US9455034B1 (en) | 2015-08-06 | 2016-02-27 | Method and system for managing a writing cycle of a data in a EEPROM memory cell |
DE102016104343.5A DE102016104343B4 (de) | 2015-08-06 | 2016-03-09 | Verfahren und System zur Kontrolle eines Schreibens eines Datums in eine Speicherzelle vom Typ EEPROM |
US15/244,521 US9576670B1 (en) | 2015-08-06 | 2016-08-23 | Method and system for managing a writing cycle of a data in a EEPROM memory cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1557576 | 2015-08-06 | ||
FR1557576A FR3039921B1 (fr) | 2015-08-06 | 2015-08-06 | Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3039921A1 FR3039921A1 (fr) | 2017-02-10 |
FR3039921B1 true FR3039921B1 (fr) | 2018-02-16 |
Family
ID=55178051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1557576A Expired - Fee Related FR3039921B1 (fr) | 2015-08-06 | 2015-08-06 | Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom |
Country Status (4)
Country | Link |
---|---|
US (2) | US9455034B1 (fr) |
CN (2) | CN110706730A (fr) |
DE (1) | DE102016104343B4 (fr) |
FR (1) | FR3039921B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3041807B1 (fr) * | 2015-09-24 | 2017-12-08 | Stmicroelectronics Rousset | Procede de controle d'un cycle d'ecriture de memoire de type eeprom et dispositif correspondant |
FR3048115B1 (fr) * | 2016-02-18 | 2018-07-13 | Stmicroelectronics (Rousset) Sas | Dispositif et procede de gestion du claquage de transistors d'acces de memoire eeprom. |
CN109215724B (zh) * | 2017-07-05 | 2021-01-15 | 北京兆易创新科技股份有限公司 | 存储器自动检测和修复的方法及装置 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
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US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5371709A (en) * | 1993-04-01 | 1994-12-06 | Microchip Technology Incorporated | Power management system for serial EEPROM device |
US5623436A (en) * | 1993-06-17 | 1997-04-22 | Information Storage Devices | Method and apparatus for adjustment and control of an iterative method of recording analog signals with on-chip trimming techniques |
FR2749698B1 (fr) * | 1996-06-07 | 1998-09-04 | Inside Technologies | Memoire remanente effacable et programmable electriquement, protegee contre les coupures d'alimentation |
EP0976302B1 (fr) * | 1997-04-16 | 2004-12-15 | DSPFactory Ltd. | Dispositif et procede servant a programmer une prothese auditive |
JP2000021184A (ja) * | 1998-07-02 | 2000-01-21 | Texas Instr Inc <Ti> | 多重レベル・セル・フラッシュ・メモリ・デバイスをプログラムおよび安定化するための方法とデバイス |
US6011721A (en) * | 1998-08-12 | 2000-01-04 | Advanced Micro Devices | Method for sensing state of erasure of a flash electrically erasable programmable read-only memory (EEPROM) |
US6421757B1 (en) * | 1998-09-30 | 2002-07-16 | Conexant Systems, Inc | Method and apparatus for controlling the programming and erasing of flash memory |
JP4055103B2 (ja) * | 2000-10-02 | 2008-03-05 | 株式会社ルネサステクノロジ | 不揮発性メモリおよびそれを内蔵した半導体集積回路並びに不揮発性メモリの書込み方法 |
JP4249992B2 (ja) * | 2002-12-04 | 2009-04-08 | シャープ株式会社 | 半導体記憶装置及びメモリセルの書き込み並びに消去方法 |
FR2858457A1 (fr) * | 2003-07-31 | 2005-02-04 | St Microelectronics Sa | Procede d'effacement/programmation d'une memoire non volatile effacable electriquement |
JP2005235287A (ja) * | 2004-02-19 | 2005-09-02 | Nec Electronics Corp | 不揮発性半導体記憶装置のプログラミング方法、プログラミング装置、及び、不揮発性半導体記憶装置 |
DE102004025123A1 (de) | 2004-05-21 | 2005-07-21 | Siemens Audiologische Technik Gmbh | Hörhilfegerät oder Hörgerätesystem mit akustischer Batterieanzeige |
FR2874449B1 (fr) * | 2004-08-17 | 2008-04-04 | Atmel Corp | Circuit de retard de programme auto-adaptatif pour memoires programmables |
KR100645051B1 (ko) * | 2004-10-26 | 2006-11-10 | 삼성전자주식회사 | 비트 라인 전압에 따른 프로그램 실행 구간의서스펜드/리쥼 기능을 갖는 불 휘발성 메모리 장치 및그것의 프로그램 방법 |
KR100748553B1 (ko) * | 2004-12-20 | 2007-08-10 | 삼성전자주식회사 | 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치 |
FR2890484A1 (fr) | 2005-09-06 | 2007-03-09 | St Microelectronics Sa | Circuit integre sans contact passif comprenant un drapeau de surveillance d'une tension d'effacement-programmation. |
US7352629B2 (en) * | 2005-12-29 | 2008-04-01 | Sandisk Corporation | Systems for continued verification in non-volatile memory write operations |
US7327608B2 (en) * | 2006-03-28 | 2008-02-05 | Sandisk Corporation | Program time adjustment as function of program voltage for improved programming speed in programming method |
DE602006011451D1 (de) * | 2006-06-21 | 2010-02-11 | Hynix Semiconductor Inc | Verfahren und Vorrichtung zum elektrischen Programmieren von Halbleiterspeicherzellen |
TW200807421A (en) * | 2006-06-26 | 2008-02-01 | Sandisk Corp | Method and system for programming non-volatile memory using variable amplitude programming pulses |
CN101345088A (zh) * | 2007-05-14 | 2009-01-14 | 桑迪士克Il有限公司 | 使用综合特征来测量存储器中的阈值电压分布 |
US7903461B2 (en) * | 2008-09-22 | 2011-03-08 | Micron Technology, Inc. | Sensing for memory read and program verify operations in a non-volatile memory device |
US7839690B2 (en) * | 2008-12-11 | 2010-11-23 | Sandisk Corporation | Adaptive erase and soft programming for memory |
KR101666941B1 (ko) * | 2010-07-06 | 2016-10-17 | 삼성전자주식회사 | 비휘발성 메모리 장치와 이를 포함하는 반도체 시스템 |
US8730722B2 (en) * | 2012-03-02 | 2014-05-20 | Sandisk Technologies Inc. | Saving of data in cases of word-line to word-line short in memory arrays |
US8817569B2 (en) * | 2012-03-19 | 2014-08-26 | Sandisk Technologies Inc. | Immunity against temporary and short power drops in non-volatile memory |
FR2993089B1 (fr) * | 2012-07-09 | 2014-07-18 | Inside Secure | Procede d'effacement ou de programmation d'une memoire factice protege contre la detection |
TWI495236B (zh) * | 2012-12-21 | 2015-08-01 | System General Corp | 控制電路及控制方法 |
EP3253076B1 (fr) * | 2014-02-12 | 2019-10-16 | Oticon A/s | Prothèse auditive avec du dispositif d'alarme de batterie faible |
KR20160047667A (ko) * | 2014-10-22 | 2016-05-03 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
-
2015
- 2015-08-06 FR FR1557576A patent/FR3039921B1/fr not_active Expired - Fee Related
-
2016
- 2016-02-23 CN CN201910936527.8A patent/CN110706730A/zh active Pending
- 2016-02-23 CN CN201610099467.5A patent/CN106448731B/zh active Active
- 2016-02-27 US US15/055,552 patent/US9455034B1/en active Active
- 2016-03-09 DE DE102016104343.5A patent/DE102016104343B4/de active Active
- 2016-08-23 US US15/244,521 patent/US9576670B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106448731B (zh) | 2019-10-25 |
US9576670B1 (en) | 2017-02-21 |
CN106448731A (zh) | 2017-02-22 |
DE102016104343B4 (de) | 2021-03-04 |
DE102016104343A1 (de) | 2017-02-09 |
CN110706730A (zh) | 2020-01-17 |
FR3039921A1 (fr) | 2017-02-10 |
US9455034B1 (en) | 2016-09-27 |
US20170040060A1 (en) | 2017-02-09 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20170210 |
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PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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ST | Notification of lapse |
Effective date: 20210405 |