ATE421758T1 - Dateneinschreibeverfahren für flash-speicher - Google Patents
Dateneinschreibeverfahren für flash-speicherInfo
- Publication number
- ATE421758T1 ATE421758T1 AT04802459T AT04802459T ATE421758T1 AT E421758 T1 ATE421758 T1 AT E421758T1 AT 04802459 T AT04802459 T AT 04802459T AT 04802459 T AT04802459 T AT 04802459T AT E421758 T1 ATE421758 T1 AT E421758T1
- Authority
- AT
- Austria
- Prior art keywords
- flash
- data write
- flash chip
- logical block
- block address
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101177142A CN100433195C (zh) | 2003-12-31 | 2003-12-31 | 闪存介质数据写入方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE421758T1 true ATE421758T1 (de) | 2009-02-15 |
Family
ID=34716082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04802459T ATE421758T1 (de) | 2003-12-31 | 2004-12-14 | Dateneinschreibeverfahren für flash-speicher |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070118681A1 (de) |
EP (1) | EP1701358B1 (de) |
JP (1) | JP4921174B2 (de) |
KR (1) | KR101087313B1 (de) |
CN (1) | CN100433195C (de) |
AT (1) | ATE421758T1 (de) |
DE (1) | DE602004019248D1 (de) |
WO (1) | WO2005064617A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100410864C (zh) * | 2004-05-31 | 2008-08-13 | 深圳市朗科科技有限公司 | 提高数据存取速度的数据分配方法 |
KR100669351B1 (ko) * | 2005-07-29 | 2007-01-16 | 삼성전자주식회사 | 멀티 레벨 셀 플래시 메모리의 프로그램 방법 및 장치 |
US7130222B1 (en) * | 2005-09-26 | 2006-10-31 | Macronix International Co., Ltd. | Nonvolatile memory with program while program verify |
KR100769776B1 (ko) * | 2006-09-29 | 2007-10-24 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리 소자의 프로그램 방법 |
KR100889781B1 (ko) * | 2007-04-30 | 2009-03-20 | 삼성전자주식회사 | 멀티-비트 데이터를 저장하는 메모리 시스템, 그것의프로그램 방법, 그것을 포함한 컴퓨팅 시스템 |
TWI381384B (zh) * | 2008-03-11 | 2013-01-01 | Netac Technology Co Ltd | 提高快閃記憶體資料存取速度的方法 |
CN101533663B (zh) * | 2008-03-11 | 2014-07-16 | 深圳市朗科科技股份有限公司 | 提高闪存介质数据存取速度的方法 |
CN101571832B (zh) * | 2008-04-29 | 2013-07-17 | 群联电子股份有限公司 | 数据写入方法及使用该方法的快闪存储系统与其控制器 |
CN101488364B (zh) * | 2009-02-10 | 2012-06-27 | 成都市华为赛门铁克科技有限公司 | 闪存控制方法、装置和系统 |
CN101540201B (zh) * | 2009-04-22 | 2012-06-27 | 华为技术有限公司 | 一种多片闪存检测方法及装置 |
CN102541755B (zh) * | 2010-12-29 | 2015-09-30 | 深圳市硅格半导体有限公司 | 闪存存储器及其接收数据的方法 |
CN102945208B (zh) * | 2012-10-25 | 2016-09-14 | 记忆科技(深圳)有限公司 | 多用户硬盘系统及其实现方法 |
US9658788B2 (en) * | 2014-05-28 | 2017-05-23 | Sandisk Technologies Llc | Systems and methods for immediate physical erasure of data stored in a memory system in response to a user command |
CN106844226B (zh) * | 2016-12-31 | 2022-12-02 | 北京市腾河智慧能源科技有限公司 | 基于norflash的宽带载波从节点控制方法 |
CN112347524B (zh) * | 2020-10-13 | 2024-07-02 | 深圳市宏旺微电子有限公司 | 闪存编程方法、装置及电子设备 |
CN112256203B (zh) * | 2020-10-26 | 2023-04-28 | 山东盖特航空科技有限公司 | Flash存储器的写入方法、装置、设备、介质及系统 |
CN113111013B (zh) * | 2021-04-19 | 2023-09-01 | 深圳芯邦科技股份有限公司 | 一种闪存数据块绑定方法、装置及介质 |
CN114816833B (zh) * | 2022-04-15 | 2023-07-18 | 巨翊科技(上海)有限公司 | 一种flash数据的写入方法、装置以及系统 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0731582B2 (ja) * | 1990-06-21 | 1995-04-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | パリティ保護データを回復するための方法および装置 |
JP2768618B2 (ja) * | 1992-08-28 | 1998-06-25 | シャープ株式会社 | 半導体ディスク装置 |
JP3105092B2 (ja) * | 1992-10-06 | 2000-10-30 | 株式会社東芝 | 半導体メモリ装置 |
US5453957A (en) * | 1993-09-17 | 1995-09-26 | Cypress Semiconductor Corp. | Memory architecture for burst mode access |
JP3308684B2 (ja) * | 1993-11-15 | 2002-07-29 | 株式会社日立国際電気 | ボイスフライトデータレコーダ |
US5671439A (en) * | 1995-01-10 | 1997-09-23 | Micron Electronics, Inc. | Multi-drive virtual mass storage device and method of operating same |
JPH08263361A (ja) * | 1995-03-23 | 1996-10-11 | Mitsubishi Electric Corp | フラッシュメモリカード |
US5671388A (en) * | 1995-05-03 | 1997-09-23 | Intel Corporation | Method and apparatus for performing write operations in multi-level cell storage device |
US6081878A (en) * | 1997-03-31 | 2000-06-27 | Lexar Media, Inc. | Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices |
JP3550293B2 (ja) * | 1997-12-26 | 2004-08-04 | 株式会社ルネサステクノロジ | 不揮発性メモリを用いた高速書換可能な記憶装置および該記憶装置のデータ書換方法 |
JP2000259448A (ja) * | 1999-03-11 | 2000-09-22 | Sharp Corp | プログラムデバッグ装置 |
US6141249A (en) * | 1999-04-01 | 2000-10-31 | Lexar Media, Inc. | Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time |
JP3938842B2 (ja) * | 2000-12-04 | 2007-06-27 | 富士通株式会社 | 半導体記憶装置 |
CN1362708A (zh) * | 2001-01-02 | 2002-08-07 | 吴秀林 | 一种闪存芯片的读写方法 |
JP4059473B2 (ja) * | 2001-08-09 | 2008-03-12 | 株式会社ルネサステクノロジ | メモリカード及びメモリコントローラ |
JP2003085039A (ja) | 2001-09-11 | 2003-03-20 | Sanmei Electric Co Ltd | フラッシュメモリへのデータ書込み方法 |
GB0123416D0 (en) * | 2001-09-28 | 2001-11-21 | Memquest Ltd | Non-volatile memory control |
JP2003132687A (ja) | 2001-10-25 | 2003-05-09 | Kyocera Corp | フラッシュromへの書き込み方法 |
JP2003330791A (ja) * | 2002-05-17 | 2003-11-21 | Matsushita Electric Ind Co Ltd | フラッシュメモリ制御装置 |
US7136986B2 (en) * | 2002-11-29 | 2006-11-14 | Ramos Technology Co., Ltd. | Apparatus and method for controlling flash memories |
US20050005058A1 (en) * | 2003-07-01 | 2005-01-06 | Wee-Kuan Gan | Interleaving management method for upgrading data processing speed |
US20050010717A1 (en) * | 2003-07-07 | 2005-01-13 | Soo-Ching Ng | Access and data management method using double parallel tracks for flash memory cells |
TW200515147A (en) * | 2003-10-17 | 2005-05-01 | Matsushita Electric Ind Co Ltd | Semiconductor memory device, controller, and read/write control method thereof |
-
2003
- 2003-12-31 CN CNB2003101177142A patent/CN100433195C/zh not_active Expired - Lifetime
-
2004
- 2004-12-14 DE DE602004019248T patent/DE602004019248D1/de active Active
- 2004-12-14 US US10/584,778 patent/US20070118681A1/en not_active Abandoned
- 2004-12-14 WO PCT/CN2004/001446 patent/WO2005064617A1/zh active Application Filing
- 2004-12-14 JP JP2006545886A patent/JP4921174B2/ja active Active
- 2004-12-14 AT AT04802459T patent/ATE421758T1/de not_active IP Right Cessation
- 2004-12-14 EP EP04802459A patent/EP1701358B1/de active Active
- 2004-12-14 KR KR1020067015286A patent/KR101087313B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP4921174B2 (ja) | 2012-04-25 |
DE602004019248D1 (de) | 2009-03-12 |
WO2005064617A1 (fr) | 2005-07-14 |
CN100433195C (zh) | 2008-11-12 |
KR101087313B1 (ko) | 2011-11-25 |
KR20060133561A (ko) | 2006-12-26 |
US20070118681A1 (en) | 2007-05-24 |
EP1701358B1 (de) | 2009-01-21 |
EP1701358A1 (de) | 2006-09-13 |
CN1635580A (zh) | 2005-07-06 |
EP1701358A4 (de) | 2007-03-28 |
JP2007517295A (ja) | 2007-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE421758T1 (de) | Dateneinschreibeverfahren für flash-speicher | |
TW200707189A (en) | Memory block erasing in a flash memory device | |
ATE546782T1 (de) | Speichersystem | |
TWI566253B (zh) | 用來管理一記憶裝置之方法以及記憶裝置與控制器 | |
ATE521030T1 (de) | Datenspeicheranordnung und datenspeicherverfahren | |
JP2004164633A5 (de) | ||
TW200632676A (en) | Speichersystem mit sektorbuffern | |
US10475516B2 (en) | Data storage device and data erasing method wherein after erasing process, predetermined value is written to indicate completion of said erasing method | |
WO2004059651A3 (en) | Nonvolatile memory unit with specific cache | |
ATE485589T1 (de) | Verfahrenstechniken zur reduzierung von programm- und lesestörungen eines nicht-flüchtigen speichers | |
TW200709210A (en) | Memory controller, non-volatile memory device, non-volatile memory system, and data writing method | |
KR101731408B1 (ko) | 플래시 메모리에 데이터를 기록하는 방법 및 관련 메모리 장치 및 플래시 메모리 | |
CA2554829A1 (en) | System and method for detecting the width of a data bus | |
TW200703360A (en) | Page buffer architecture for programming, erasing and reading nanoscale resistive memory devices | |
TW200634838A (en) | Page buffer of flash memory device with improved program operation performance and program operation control method | |
CN102792381A (zh) | 用于多电平存储器单元(mlc)快闪存储器的防数据破坏的保护 | |
TWI437569B (zh) | 用來管理一快閃記憶體的複數個區塊之方法以及相關之記憶裝置及其控制器 | |
TW200700987A (en) | Method and apparatus for performing multi-programmable function with one-time programmable memories | |
KR870005473A (ko) | 반도체 프로그램어블 메모리 장치 | |
ATE490505T1 (de) | Datenschreibverfahren | |
ATE375547T1 (de) | Verfahren und vorrichtung zum einschreiben von daten in einen nicht flüchtigen speicher | |
KR20090120675A (ko) | 불휘발성 메모리 소자의 어드레스 입력 방법 및 동작 방법 | |
TW200639866A (en) | Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory | |
KR20070048384A (ko) | 메모리 맵에서 배드 블록 처리방법 | |
DE10341616A1 (de) | Verwaltung defekter Blöcke in Flash-Speichern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |