DE60116406T2 - Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums - Google Patents
Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums Download PDFInfo
- Publication number
- DE60116406T2 DE60116406T2 DE2001616406 DE60116406T DE60116406T2 DE 60116406 T2 DE60116406 T2 DE 60116406T2 DE 2001616406 DE2001616406 DE 2001616406 DE 60116406 T DE60116406 T DE 60116406T DE 60116406 T2 DE60116406 T2 DE 60116406T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- atomic percent
- silver
- medium
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 97
- 238000003860 storage Methods 0.000 title claims description 41
- 229910001092 metal group alloy Inorganic materials 0.000 title claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 183
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 121
- 239000004332 silver Substances 0.000 claims description 121
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 42
- 239000011701 zinc Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- 239000011572 manganese Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 28
- 239000011651 chromium Substances 0.000 claims description 26
- 239000010931 gold Substances 0.000 claims description 26
- 229910052725 zinc Inorganic materials 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 229910052748 manganese Inorganic materials 0.000 claims description 23
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 20
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 229910052732 germanium Inorganic materials 0.000 claims description 17
- 229910052744 lithium Inorganic materials 0.000 claims description 17
- 229910052787 antimony Inorganic materials 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052793 cadmium Inorganic materials 0.000 claims description 10
- 239000011669 selenium Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 239000010948 rhodium Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- 229910017061 Fe Co Inorganic materials 0.000 claims description 2
- 229910005939 Ge—Sn Inorganic materials 0.000 claims description 2
- 229910020923 Sn-O Inorganic materials 0.000 claims description 2
- 229910018731 Sn—Au Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 232
- 238000002310 reflectometry Methods 0.000 description 47
- 229910001316 Ag alloy Inorganic materials 0.000 description 45
- 229910045601 alloy Inorganic materials 0.000 description 45
- 239000000956 alloy Substances 0.000 description 45
- 239000010409 thin film Substances 0.000 description 44
- 239000000758 substrate Substances 0.000 description 30
- 238000005477 sputtering target Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 230000008859 change Effects 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 17
- 229910000838 Al alloy Inorganic materials 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 16
- 230000007797 corrosion Effects 0.000 description 16
- 229920000515 polycarbonate Polymers 0.000 description 12
- 239000004417 polycarbonate Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000003292 glue Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000013500 data storage Methods 0.000 description 7
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 7
- 239000010970 precious metal Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 230000032683 aging Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920005668 polycarbonate resin Polymers 0.000 description 4
- 239000004431 polycarbonate resin Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 0 *C1=CCC=C(CC*=C)C1 Chemical compound *C1=CCC=C(CC*=C)C1 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- 229910001297 Zn alloy Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005097 cold rolling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012943 hotmelt Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 halogen ions Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005482 strain hardening Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 101100189378 Caenorhabditis elegans pat-3 gene Proteins 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- FOPBMNGISYSNED-UHFFFAOYSA-N [Fe].[Co].[Tb] Chemical compound [Fe].[Co].[Tb] FOPBMNGISYSNED-UHFFFAOYSA-N 0.000 description 1
- XVRLBVUHNKCEQQ-UHFFFAOYSA-N [Fe].[Gd].[Tb] Chemical compound [Fe].[Gd].[Tb] XVRLBVUHNKCEQQ-UHFFFAOYSA-N 0.000 description 1
- BPYMJIZUWGOKJS-UHFFFAOYSA-N [Ge].[Ag] Chemical compound [Ge].[Ag] BPYMJIZUWGOKJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 101150101567 pat-2 gene Proteins 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24035—Recording layers
- G11B7/24038—Multiple laminated recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31609—Particulate metal or metal compound-containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21984300P | 2000-07-21 | 2000-07-21 | |
| US219843P | 2000-07-21 | ||
| US09/834,775 US6544616B2 (en) | 2000-07-21 | 2001-04-13 | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US834775P | 2001-04-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60116406D1 DE60116406D1 (de) | 2006-03-30 |
| DE60116406T2 true DE60116406T2 (de) | 2006-08-03 |
Family
ID=26914310
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60125846.0T Expired - Lifetime DE60125846T3 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE60142498T Expired - Lifetime DE60142498D1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE60144500T Expired - Lifetime DE60144500D1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für reflektierende oder halbreflektierende Schicht eines optischen Speichermediums |
| DE2004026812 Pending DE04026812T1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE2001222938 Expired - Lifetime DE20122938U1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder die semi-reflektierende Schicht eines optischen Speichermediums |
| DE2001616406 Expired - Lifetime DE60116406T2 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE2001110879 Pending DE01110879T1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE2001222939 Expired - Lifetime DE20122939U1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder die semi-reflektierende Schicht eines optischen Speichermediums |
Family Applications Before (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60125846.0T Expired - Lifetime DE60125846T3 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE60142498T Expired - Lifetime DE60142498D1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE60144500T Expired - Lifetime DE60144500D1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für reflektierende oder halbreflektierende Schicht eines optischen Speichermediums |
| DE2004026812 Pending DE04026812T1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE2001222938 Expired - Lifetime DE20122938U1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder die semi-reflektierende Schicht eines optischen Speichermediums |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2001110879 Pending DE01110879T1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums |
| DE2001222939 Expired - Lifetime DE20122939U1 (de) | 2000-07-21 | 2001-05-04 | Metalllegierungen für die reflektierende oder die semi-reflektierende Schicht eines optischen Speichermediums |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6544616B2 (enExample) |
| EP (6) | EP1956598B1 (enExample) |
| JP (2) | JP2002117587A (enExample) |
| CN (1) | CN1214379C (enExample) |
| AU (2) | AU765849C (enExample) |
| BR (1) | BR0102101A (enExample) |
| DE (8) | DE60125846T3 (enExample) |
| TW (1) | TW531562B (enExample) |
| WO (1) | WO2002007919A1 (enExample) |
Families Citing this family (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045187B2 (en) * | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7384677B2 (en) | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US6790503B2 (en) * | 1998-06-22 | 2004-09-14 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6905750B2 (en) * | 1998-06-22 | 2005-06-14 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6764735B2 (en) | 1998-06-22 | 2004-07-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314657B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6852384B2 (en) | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6600725B1 (en) * | 1998-12-16 | 2003-07-29 | At&T Corp. | Apparatus and method for providing multimedia conferencing services with selective information services |
| US20010038596A1 (en) * | 2000-03-17 | 2001-11-08 | Duanyi Xu | Multi-wavelength optical disc, apparatus and method for reading and writing signal therefor |
| US7374805B2 (en) * | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7316837B2 (en) * | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP2002056574A (ja) * | 2000-08-04 | 2002-02-22 | Pioneer Electronic Corp | 光記録媒体 |
| TW575674B (en) * | 2001-03-16 | 2004-02-11 | Ishifuku Metal Ind | A sputtering target material and Ag alloy film |
| US7027382B2 (en) | 2001-06-26 | 2006-04-11 | Ricoh Company, Ltd. | Optical recording medium having relation between reflection layer and pit lengths |
| TWI260004B (en) * | 2002-03-04 | 2006-08-11 | Ritek Corp | Write-once high-density CD-recordable layer structure and manufacturing method |
| CN1290106C (zh) * | 2002-03-07 | 2006-12-13 | 株式会社理光 | 光记录媒体及其制造方法 |
| US20030190551A1 (en) * | 2002-04-05 | 2003-10-09 | Tdk Corporation | Optical recording medium and method for optically recording information in the same |
| EP1357551A3 (en) * | 2002-04-26 | 2004-12-22 | TDK Corporation | Optical recording medium and method for optically recording data in the same |
| TW574423B (en) * | 2002-05-14 | 2004-02-01 | Homogeneity Electronic Materia | A thin film alloy material with the design of optic reflection and semi-transmission |
| CN1238554C (zh) * | 2002-06-24 | 2006-01-25 | 株式会社钢臂功科研 | 银合金溅射靶及其制造方法 |
| ES2263985T3 (es) * | 2002-06-28 | 2006-12-16 | Williams Advanced Materials Inc. | Aleaciones metalicas de plata resistentes a la corrosion para el almacenamiento optico de grabacion que las contine. |
| US20040038080A1 (en) * | 2002-07-01 | 2004-02-26 | Tdk Corporation | Optical recording medium and method for recording data in the same |
| JP4059714B2 (ja) * | 2002-07-04 | 2008-03-12 | Tdk株式会社 | 光記録媒体 |
| JP4092147B2 (ja) * | 2002-07-04 | 2008-05-28 | Tdk株式会社 | 光記録媒体及び光記録方法 |
| US20040005432A1 (en) * | 2002-07-08 | 2004-01-08 | Ridout James W. | Reflective or semi-reflective metal alloy coatings |
| US20070042155A1 (en) * | 2002-07-08 | 2007-02-22 | Academy Corporation | Reflective or semi-reflective metal alloy coatings |
| US7572517B2 (en) * | 2002-07-08 | 2009-08-11 | Target Technology Company, Llc | Reflective or semi-reflective metal alloy coatings |
| US7514037B2 (en) * | 2002-08-08 | 2009-04-07 | Kobe Steel, Ltd. | AG base alloy thin film and sputtering target for forming AG base alloy thin film |
| JP4282285B2 (ja) * | 2002-08-12 | 2009-06-17 | Tdk株式会社 | 光記録媒体及び光記録方法 |
| US7128959B2 (en) * | 2002-08-23 | 2006-10-31 | General Electric Company | Reflective article and method for the preparation thereof |
| US7329462B2 (en) * | 2002-08-23 | 2008-02-12 | General Electric Company | Reflective article and method for the preparation thereof |
| US7300742B2 (en) * | 2002-08-23 | 2007-11-27 | General Electric Company | Data storage medium and method for the preparation thereof |
| US7132149B2 (en) * | 2002-08-23 | 2006-11-07 | General Electric Company | Data storage medium and method for the preparation thereof |
| MXPA05002163A (es) * | 2002-08-29 | 2005-06-03 | Koninkl Philips Electronics Nv | Medio optico de almacenamiento de datos de multiples apilamientos y uso del mismo. |
| US20040076907A1 (en) * | 2002-10-22 | 2004-04-22 | Tdk Corporation | Optical recording medium and method for manufacturing the same |
| US20050146993A1 (en) * | 2002-10-25 | 2005-07-07 | Fujitsu Limited | Magneto-optical recording medium, information recording/reproducing method, and magnetic recording apparatus |
| US7781146B2 (en) * | 2002-11-22 | 2010-08-24 | Tdk Corporation | Optical recording medium |
| FR2848014A1 (fr) * | 2002-12-03 | 2004-06-04 | Commissariat Energie Atomique | Support d'enregistrement optique irreversible inorganique comportant une couche de dissipation thermique |
| JP2004192702A (ja) * | 2002-12-10 | 2004-07-08 | Tanaka Kikinzoku Kogyo Kk | 光記録媒体の反射膜用の銀合金 |
| US7932015B2 (en) * | 2003-01-08 | 2011-04-26 | Tdk Corporation | Optical recording medium |
| DE60329544D1 (de) * | 2003-03-13 | 2009-11-12 | Mitsubishi Materials Corp | Sputtertarget aus Silberlegierung zur Bildung einer reflektierenden Schicht auf einem optischen Aufzeichnungsmedium |
| US20060188386A1 (en) * | 2003-03-13 | 2006-08-24 | Akifumi Mishima | Silver alloy sputtering target for forming reflective layer of optical recording media |
| JP2006523913A (ja) * | 2003-04-18 | 2006-10-19 | ターゲット・テクノロジー・カンパニー・エルエルシー | 光蓄積媒体の反射層または半反射層のための合金 |
| JP3993530B2 (ja) * | 2003-05-16 | 2007-10-17 | 株式会社神戸製鋼所 | Ag−Bi系合金スパッタリングターゲットおよびその製造方法 |
| WO2004102553A1 (ja) * | 2003-05-16 | 2004-11-25 | Mitsubishi Materials Corporation | 光記録媒体の反射層形成用銀合金スパッタリングターゲット |
| CN1795500B (zh) * | 2003-05-28 | 2012-07-18 | 皇家飞利浦电子股份有限公司 | 多叠层光学存储介质 |
| FR2858100B1 (fr) * | 2003-07-21 | 2005-10-21 | Commissariat Energie Atomique | Support d'enregistrement optique comportant au moins une couche photosensible et une couche deformable |
| TWI370449B (en) * | 2003-07-25 | 2012-08-11 | Panasonic Corp | Information recording medium and method for producing the same |
| TW200514070A (en) * | 2003-09-03 | 2005-04-16 | Williams Advanced Materials Inc | Silver alloys for optical data storage and optical media containing same |
| US20050118530A1 (en) * | 2003-10-02 | 2005-06-02 | Tdk Corporation | Optical recording medium |
| WO2005035237A1 (en) * | 2003-10-09 | 2005-04-21 | Target Technology Company, Llc | Multi-layer optical information storage medium and method of making the same |
| JP4309227B2 (ja) * | 2003-10-16 | 2009-08-05 | 石福金属興業株式会社 | スパッタリングターゲット材 |
| MXPA04012240A (es) * | 2003-12-08 | 2005-09-30 | Matsushita Electric Ind Co Ltd | Medio optico de grabacion de informacion y metodo para grabar marcas de tipo codigo de barras. |
| EP1736558A4 (en) * | 2003-12-10 | 2009-06-17 | Tanaka Precious Metal Ind | SILVER ALLOY FOR REFLECTIVE FILM |
| US20070020138A1 (en) * | 2003-12-10 | 2007-01-25 | Tomokazu Obata | Silver alloy excellent inreflectance maintenance property |
| US8019194B2 (en) * | 2004-04-05 | 2011-09-13 | S. two Corp. | Digital audio and video recording and storage system and method |
| TWI325134B (en) * | 2004-04-21 | 2010-05-21 | Kobe Steel Ltd | Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target |
| EP1612784B1 (en) * | 2004-06-29 | 2007-11-28 | Kabushiki Kaisha Kobe Seiko Sho | Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target |
| JP3907666B2 (ja) * | 2004-07-15 | 2007-04-18 | 株式会社神戸製鋼所 | レーザーマーキング用再生専用光情報記録媒体 |
| NZ533760A (en) * | 2004-07-28 | 2007-02-23 | Assa Abloy New Zealand Ltd | A window operator handle |
| US20060093511A1 (en) * | 2004-11-03 | 2006-05-04 | Jhewn-Kuang Chen | Reflective alloy film |
| JP2006240289A (ja) * | 2005-02-07 | 2006-09-14 | Kobe Steel Ltd | 光情報記録媒体用記録膜および光情報記録媒体ならびにスパッタリングターゲット |
| JP2006294195A (ja) * | 2005-04-14 | 2006-10-26 | Kobe Steel Ltd | 光情報記録用Ag合金反射膜、光情報記録媒体および光情報記録用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| WO2006132415A1 (ja) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | 反射率・透過率維持特性に優れた銀合金 |
| WO2006132410A1 (ja) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | 電極、配線及び電磁波遮蔽用の銀合金 |
| WO2006132414A1 (ja) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | 反射率・透過率維持特性に優れた銀合金 |
| JPWO2006132411A1 (ja) * | 2005-06-10 | 2009-01-08 | 田中貴金属工業株式会社 | 電極、配線及び電磁波遮蔽用の銀合金 |
| US20070014963A1 (en) * | 2005-07-12 | 2007-01-18 | Nee Han H | Metal alloys for the reflective layer of an optical storage medium |
| JP2007035104A (ja) * | 2005-07-22 | 2007-02-08 | Kobe Steel Ltd | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| JP4527624B2 (ja) * | 2005-07-22 | 2010-08-18 | 株式会社神戸製鋼所 | Ag合金反射膜を有する光情報媒体 |
| JP4377861B2 (ja) * | 2005-07-22 | 2009-12-02 | 株式会社神戸製鋼所 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| JP4377877B2 (ja) | 2005-12-21 | 2009-12-02 | ソニー株式会社 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| US8097100B2 (en) * | 2006-04-03 | 2012-01-17 | Praxair Technology, Inc. | Ternary aluminum alloy films and targets for manufacturing flat panel displays |
| JP2007335061A (ja) * | 2006-05-16 | 2007-12-27 | Sony Corp | 光情報記録媒体とそのBCA(BurstCuttingArea)マーキング方法 |
| WO2007136513A1 (en) * | 2006-05-17 | 2007-11-29 | Nova Chemicals Inc. | Multilayered structures and their use as optical storage media |
| WO2008026601A1 (en) * | 2006-08-28 | 2008-03-06 | Kabushiki Kaisha Kobe Seiko Sho | Ag ALLOY REFLECTION FILM FOR OPTICAL INFORMATION RECORDING MEDIUM, OPTICAL INFORMATION RECORDING MEDIUM, AND SPUTTERING TARGET FOR Ag ALLOY REFLECTION FILM FOR OPTICAL INFORMATION RECORDING MEDIUM FORMATION |
| JP2008117470A (ja) * | 2006-11-02 | 2008-05-22 | Sony Corp | 光情報記録媒体および光情報記録媒体の製造方法、BCA(BurstCuttingArea)マーキング方法 |
| JP4540687B2 (ja) * | 2007-04-13 | 2010-09-08 | 株式会社ソニー・ディスクアンドデジタルソリューションズ | 読み出し専用の光情報記録媒体 |
| JP4694543B2 (ja) * | 2007-08-29 | 2011-06-08 | 株式会社コベルコ科研 | Ag基合金スパッタリングターゲット、およびその製造方法 |
| JP4833942B2 (ja) * | 2007-08-29 | 2011-12-07 | 株式会社コベルコ科研 | Ag基合金スパッタリングターゲット |
| JP2009076129A (ja) | 2007-09-19 | 2009-04-09 | Kobe Steel Ltd | 読み出し専用の光情報記録媒体 |
| JP5046890B2 (ja) * | 2007-11-29 | 2012-10-10 | 株式会社コベルコ科研 | Ag系スパッタリングターゲット |
| US8130438B2 (en) * | 2008-07-03 | 2012-03-06 | Ajjer Llc | Metal coatings, conductive nanoparticles and applications of the same |
| JP5331420B2 (ja) | 2008-09-11 | 2013-10-30 | 株式会社神戸製鋼所 | 読み出し専用の光情報記録媒体および該光情報記録媒体の半透過反射膜形成用スパッタリングターゲット |
| WO2010035944A2 (ko) * | 2008-09-29 | 2010-04-01 | 서울반도체 주식회사 | 발광 장치 |
| JP2010225572A (ja) * | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機elディスプレイ用の反射アノード電極および配線膜 |
| CN101476105A (zh) * | 2008-11-28 | 2009-07-08 | 苏州市南极风能源设备有限公司 | 一种内胆镀钛 |
| US8530023B2 (en) | 2009-04-14 | 2013-09-10 | Kobe Steel, Ltd. | Optical information recording medium and sputtering target for forming reflective film for optical information recording medium |
| US8277919B2 (en) * | 2009-07-23 | 2012-10-02 | VMO Systems, Inc. | Reflective coating for an optical disc |
| JP2013148137A (ja) * | 2012-01-18 | 2013-08-01 | Daido Metal Co Ltd | 摺動部材 |
| JP5590258B2 (ja) * | 2013-01-23 | 2014-09-17 | 三菱マテリアル株式会社 | Ag合金膜形成用スパッタリングターゲットおよびAg合金膜、Ag合金反射膜、Ag合金導電膜、Ag合金半透過膜 |
| RU2708489C1 (ru) * | 2018-01-22 | 2019-12-09 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Способ нанесения кадмиевого покрытия прецизионным вакуумным напылением на поверхность детали |
| SE543408C2 (en) | 2018-10-22 | 2021-01-05 | Mimsi Mat Ab | Glazing and method of its production |
| WO2021214107A1 (en) | 2020-04-21 | 2021-10-28 | Mimsi Materials Ab | Solar control glazing and method of its production |
| CN111547760B (zh) * | 2020-05-11 | 2022-08-09 | 东北师范大学 | 氧化物衬底原位生长银纳米棒的制备方法及应用 |
| CN112143931B (zh) * | 2020-09-18 | 2022-03-11 | 国金黄金股份有限公司 | 一种低导热银材料及其制备方法、银器 |
Family Cites Families (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7803069A (nl) | 1978-03-22 | 1979-09-25 | Philips Nv | Meerlaags informatieschijf. |
| FR2474223A1 (fr) | 1980-01-23 | 1981-07-24 | Thomson Csf | Procede d'inscription thermo-optique d'information et support d'information destine a la mise en oeuvre de ce procede |
| NL8102283A (nl) | 1981-05-11 | 1982-12-01 | Philips Nv | Optisch uitleesbare informatieschijf met een reflectielaag gevormd uit een metaallegering. |
| US4998239A (en) | 1987-10-07 | 1991-03-05 | The Dow Chemical Company | Optical information recording medium containing a metal alloy as a reflective material |
| US5090009A (en) | 1988-07-30 | 1992-02-18 | Taiyo Yuden Co., Ltd. | Optical information recording medium |
| US5171392A (en) | 1988-11-08 | 1992-12-15 | Pioneer Electronic Corporation | Method of producing an optical information record carrier |
| JP2893712B2 (ja) * | 1989-05-08 | 1999-05-24 | 日本電気株式会社 | 光記憶体 |
| CA2017284C (en) | 1989-07-04 | 1995-10-03 | Kazutomi Suzuki | Optical recording medium |
| JPH03286432A (ja) | 1990-03-31 | 1991-12-17 | Taiyo Yuden Co Ltd | 光情報記録媒体 |
| JPH03288346A (ja) * | 1990-04-04 | 1991-12-18 | Teijin Ltd | 光記録媒体 |
| JP3082240B2 (ja) * | 1990-07-04 | 2000-08-28 | カシオ計算機株式会社 | 光磁気記録媒体の記録方法 |
| JPH0512710A (ja) | 1991-07-03 | 1993-01-22 | Hitachi Maxell Ltd | 光情報記録媒体 |
| US5325351A (en) | 1990-10-22 | 1994-06-28 | Tdk Corporation | Optical recording medium having a reflective layer made of Cu-Ag or Cu-Au alloy |
| JPH05195011A (ja) | 1991-08-17 | 1993-08-03 | Werkzeugbau Alvier Ag | 螺旋形状の輪郭を有する工作物をプレス成形するモジュラー装置 |
| JP3023226B2 (ja) | 1991-10-25 | 2000-03-21 | 日本碍子株式会社 | 撹拌機の撹拌性能測定方法 |
| JPH05159363A (ja) * | 1991-12-11 | 1993-06-25 | Ricoh Co Ltd | 光記録媒体 |
| JP3114755B2 (ja) | 1991-12-27 | 2000-12-04 | 旭硝子株式会社 | 板状部材の支持構造及び支持部材 |
| JP2989065B2 (ja) | 1992-02-04 | 1999-12-13 | 株式会社ミツバ | 回転体の不釣り合い修正装置 |
| JPH05215547A (ja) | 1992-02-06 | 1993-08-24 | Nippon Telegr & Teleph Corp <Ntt> | ステレオ画像間対応点決定方法 |
| JPH05233110A (ja) | 1992-02-17 | 1993-09-10 | Nec Corp | 活線挿抜方式 |
| JP2849500B2 (ja) | 1992-03-04 | 1999-01-20 | シャープ株式会社 | 半導体レーザの製造方法 |
| JP3174818B2 (ja) | 1992-03-05 | 2001-06-11 | 規夫 真崎 | 溶解速度の向上した結晶の製造方法 |
| JP3140200B2 (ja) | 1992-03-10 | 2001-03-05 | 株式会社日立製作所 | 内燃機関の制御装置 |
| JPH05249821A (ja) | 1992-03-10 | 1993-09-28 | Ricoh Co Ltd | 2成分系現像システム |
| JPH05277809A (ja) | 1992-03-27 | 1993-10-26 | Kawatetsu Techno Res Corp | 管ねじ切り用チップ及びその製造装置 |
| JPH0665594A (ja) | 1992-06-17 | 1994-03-08 | Lion Corp | 低濃度でも洗浄性能を有する洗浄剤組成物 |
| JP3199486B2 (ja) | 1992-06-30 | 2001-08-20 | ティーディーケイ株式会社 | 光記録ディスク |
| JP3292890B2 (ja) | 1992-08-10 | 2002-06-17 | 株式会社リコー | 光反射放熱用材料を用いた相変化形光記録媒体 |
| JP2657597B2 (ja) | 1992-08-28 | 1997-09-24 | ティーディーケイ株式会社 | 光記録ディスク |
| JPH06111259A (ja) | 1992-09-24 | 1994-04-22 | Sony Corp | ビデオヘッド及びその取り付け法 |
| US5419939A (en) | 1992-09-24 | 1995-05-30 | Tdk Corporation | Optical recording disk |
| JP2841258B2 (ja) | 1992-10-11 | 1998-12-24 | 株式会社堀場製作所 | 蛍光x線定性分析方法 |
| JPH06143042A (ja) | 1992-10-30 | 1994-05-24 | Ricoh Co Ltd | 電極素材及び放電加工用電極の取付装置 |
| JP2881082B2 (ja) | 1992-11-04 | 1999-04-12 | 石川島芝浦機械株式会社 | ロータリ耕耘装置の耕深調節連動リアカバー |
| EP0598283B1 (de) | 1992-11-16 | 1997-10-29 | Bayer Ag | Kontinuierliches Verfahren zur Umsatzsteuerung von Polyurethan-Prepolymeren durch teilweise Vermischung des Prepolymeren mit den Monomeren |
| JP2531333B2 (ja) | 1993-02-05 | 1996-09-04 | 東洋製罐株式会社 | 包装容器入りホウレンソウおよびその製造方法 |
| JPH06253971A (ja) | 1993-03-08 | 1994-09-13 | Tsutomu Yoneyama | 栗採取具 |
| JPH0776177A (ja) | 1993-06-18 | 1995-03-20 | Nippon Kayaku Co Ltd | 感熱転写用シート |
| JPH0714221A (ja) | 1993-06-25 | 1995-01-17 | Mitsubishi Plastics Ind Ltd | 光記録媒体の製造方法 |
| JPH0736958A (ja) | 1993-06-29 | 1995-02-07 | Toshiba Corp | 情報処理装置 |
| JPH0738628A (ja) | 1993-07-16 | 1995-02-07 | Fujitsu Ltd | スケジュール機能付き電話機 |
| JPH07105575A (ja) | 1993-10-07 | 1995-04-21 | Mitsubishi Chem Corp | 光記録媒体 |
| JPH07116045A (ja) | 1993-10-26 | 1995-05-09 | Suzuki Shimesu | 自動車用ホーンボタン |
| JP2643807B2 (ja) | 1993-11-17 | 1997-08-20 | 株式会社大和電機製作所 | 車輪駆動発電装置 |
| JPH07223758A (ja) | 1994-02-10 | 1995-08-22 | Canon Inc | 紙幅検知装置及びシート給送装置及び画像形成装置 |
| JP2990011B2 (ja) | 1994-03-29 | 1999-12-13 | ティーディーケイ株式会社 | 光記録媒体 |
| US5464619A (en) | 1994-06-03 | 1995-11-07 | The Procter & Gamble Company | Beverage compositions containing green tea solids, electrolytes and carbohydrates to provide improved cellular hydration and drinkability |
| JPH0814667A (ja) | 1994-06-24 | 1996-01-19 | Hatano Seisakusho:Kk | 浴槽用給湯循環接続具及び給湯通路分割具 |
| JP3410221B2 (ja) | 1994-07-05 | 2003-05-26 | 株式会社エムアールディー | パチンコ機の玉受皿 |
| JP3698744B2 (ja) | 1994-07-25 | 2005-09-21 | 光洋精工株式会社 | 車軸用キャップ |
| JP2846247B2 (ja) | 1994-08-08 | 1999-01-13 | 株式会社神戸製鋼所 | ジルコニウム合金を含む放射性金属廃棄物の減容処理方法および装置 |
| JPH08115029A (ja) | 1994-10-17 | 1996-05-07 | Fuji Xerox Co Ltd | クリーニング装置 |
| JP2806274B2 (ja) | 1994-10-19 | 1998-09-30 | 日本電気株式会社 | 光学情報記録媒体 |
| JPH08149725A (ja) | 1994-11-15 | 1996-06-07 | Matsushita Electric Ind Co Ltd | 回転電機の固定子 |
| JPH08153339A (ja) | 1994-11-29 | 1996-06-11 | Sony Corp | 光ディスク |
| US5726970A (en) | 1995-03-20 | 1998-03-10 | Sony Corporation | Multi-layer optical recording medium |
| JPH08297858A (ja) | 1995-04-27 | 1996-11-12 | Pioneer Video Corp | 光ディスク及びその製造方法 |
| JPH097226A (ja) | 1995-06-20 | 1997-01-10 | Hitachi Maxell Ltd | 光情報記録媒体 |
| US5640382A (en) | 1995-12-19 | 1997-06-17 | Imation Corp. | Dual layer optical medium having partially reflecting metal alloy layer |
| US5820994A (en) * | 1996-02-16 | 1998-10-13 | Mitsui Chemicals, Inc. | Laminate and method for preparing same |
| JPH1049916A (ja) * | 1996-07-31 | 1998-02-20 | Hitachi Ltd | 情報記録媒体および情報メモリー装置 |
| JPH10158147A (ja) | 1996-11-29 | 1998-06-16 | Kenji Nakamura | 皮膚保護用の被膜組成物とそれを用いた製品 |
| EP1143432A3 (en) * | 1997-03-27 | 2002-04-24 | Mitsubishi Chemical Corporation | Optical information recording medium |
| EP0911820A4 (en) * | 1997-04-24 | 2002-01-16 | Matsushita Electric Industrial Co Ltd | OPTICAL RECORDING MEDIUM AND SUBSTRATE THEREFOR |
| EP1628296B1 (en) * | 1997-11-17 | 2013-03-06 | Mitsubishi Kagaku Media Co., Ltd. | Optical information recording medium |
| US6007889A (en) | 1998-06-22 | 1999-12-28 | Target Technology, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6852384B2 (en) * | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| EP1271501A3 (de) * | 1998-10-02 | 2008-10-29 | Singulus Technologies AG | Optische Datenspeicherscheibe |
| JP2001209981A (ja) * | 1999-02-09 | 2001-08-03 | Ricoh Co Ltd | 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク |
| JP4260972B2 (ja) * | 1999-03-30 | 2009-04-30 | ソニー株式会社 | 光学記録媒体 |
| US6242068B1 (en) * | 1999-12-28 | 2001-06-05 | Eastman Kodak Company | Recordable optical media with a silver-palladium reflective layer |
-
2001
- 2001-04-13 US US09/834,775 patent/US6544616B2/en not_active Expired - Lifetime
- 2001-05-02 AU AU40292/01A patent/AU765849C/en not_active Expired
- 2001-05-04 EP EP20080009657 patent/EP1956598B1/en not_active Expired - Lifetime
- 2001-05-04 EP EP20010110879 patent/EP1174868B1/en not_active Expired - Lifetime
- 2001-05-04 EP EP05019014A patent/EP1607954B8/en not_active Expired - Lifetime
- 2001-05-04 DE DE60125846.0T patent/DE60125846T3/de not_active Expired - Lifetime
- 2001-05-04 DE DE60142498T patent/DE60142498D1/de not_active Expired - Lifetime
- 2001-05-04 DE DE60144500T patent/DE60144500D1/de not_active Expired - Lifetime
- 2001-05-04 EP EP20100011264 patent/EP2261904B1/en not_active Expired - Lifetime
- 2001-05-04 DE DE2004026812 patent/DE04026812T1/de active Pending
- 2001-05-04 EP EP04026812.0A patent/EP1505584B2/en not_active Expired - Lifetime
- 2001-05-04 DE DE2001222938 patent/DE20122938U1/de not_active Expired - Lifetime
- 2001-05-04 DE DE2001616406 patent/DE60116406T2/de not_active Expired - Lifetime
- 2001-05-04 EP EP20080009656 patent/EP1956597B1/en not_active Expired - Lifetime
- 2001-05-04 DE DE2001110879 patent/DE01110879T1/de active Pending
- 2001-05-04 DE DE2001222939 patent/DE20122939U1/de not_active Expired - Lifetime
- 2001-05-08 JP JP2001137430A patent/JP2002117587A/ja active Pending
- 2001-05-23 CN CNB011169990A patent/CN1214379C/zh not_active Expired - Fee Related
- 2001-05-24 BR BR0102101A patent/BR0102101A/pt not_active IP Right Cessation
- 2001-06-06 AU AU2001266741A patent/AU2001266741A1/en not_active Abandoned
- 2001-06-06 WO PCT/US2001/018350 patent/WO2002007919A1/en not_active Ceased
- 2001-06-21 TW TW90115058A patent/TW531562B/zh not_active IP Right Cessation
-
2003
- 2003-04-08 US US10/409,037 patent/US20040018334A1/en not_active Abandoned
-
2006
- 2006-10-11 JP JP2006277882A patent/JP4313387B2/ja not_active Expired - Lifetime
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60116406T2 (de) | Metalllegierungen für die reflektierende oder semireflektierende Schicht eines optischen Speichermediums | |
| US7291374B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US9177594B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US6905750B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US7687130B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US20080182058A1 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| DE602004005007T2 (de) | Optisches aufzeichnungsmedium und verfahren zu seiner herstellung | |
| US7384677B2 (en) | Metal alloys for the reflective or semi-reflective layer of an optical storage medium | |
| US7314659B2 (en) | Metal alloys for the reflective or semi-reflective layer of an optical storage medium | |
| US7314657B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |