DE4130889A1 - Isolierschicht-thyristor - Google Patents

Isolierschicht-thyristor

Info

Publication number
DE4130889A1
DE4130889A1 DE4130889A DE4130889A DE4130889A1 DE 4130889 A1 DE4130889 A1 DE 4130889A1 DE 4130889 A DE4130889 A DE 4130889A DE 4130889 A DE4130889 A DE 4130889A DE 4130889 A1 DE4130889 A1 DE 4130889A1
Authority
DE
Germany
Prior art keywords
conductivity
base layer
electrode region
main
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4130889A
Other languages
English (en)
Other versions
DE4130889C2 (de
Inventor
Takashi Shinohe
Kazuya Nakayama
Minami Takeuchi
Masakazu Yamaguchi
Mitsuhiko Kitagawa
Ichiro Omura
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1359391A external-priority patent/JPH04247662A/ja
Priority claimed from JP03109602A external-priority patent/JP3119890B2/ja
Priority claimed from JP14344991A external-priority patent/JP3176954B2/ja
Priority claimed from JP21322691A external-priority patent/JP3297060B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to DE4143612A priority Critical patent/DE4143612C2/de
Publication of DE4130889A1 publication Critical patent/DE4130889A1/de
Application granted granted Critical
Publication of DE4130889C2 publication Critical patent/DE4130889C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE4130889A 1990-09-17 1991-09-17 Isolierschicht-Thyristor Expired - Fee Related DE4130889C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE4143612A DE4143612C2 (de) 1990-09-17 1991-09-17 Isolierschicht-Halbleiterleistungsvorrichtung

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP24395790 1990-09-17
JP24395690 1990-09-17
JP24395890 1990-09-17
JP25906390 1990-09-28
JP1359391A JPH04247662A (ja) 1991-02-04 1991-02-04 絶縁ゲート付ターンオフサイリスタ
JP03109602A JP3119890B2 (ja) 1991-04-16 1991-04-16 絶縁ゲート付サイリスタ
JP14344991A JP3176954B2 (ja) 1990-09-28 1991-06-14 絶縁ゲート付き電力用半導体素子
JP21322691A JP3297060B2 (ja) 1990-09-17 1991-07-31 絶縁ゲート型サイリスタ

Publications (2)

Publication Number Publication Date
DE4130889A1 true DE4130889A1 (de) 1992-03-19
DE4130889C2 DE4130889C2 (de) 1999-06-10

Family

ID=33545733

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4130889A Expired - Fee Related DE4130889C2 (de) 1990-09-17 1991-09-17 Isolierschicht-Thyristor

Country Status (2)

Country Link
US (4) US5381026A (de)
DE (1) DE4130889C2 (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0565349A2 (de) * 1992-04-07 1993-10-13 Toyo Denki Seizo Kabushiki Kaisha MOS-kontrollierter Thyristor
EP0569116A1 (de) * 1992-05-06 1993-11-10 Mitsubishi Denki Kabushiki Kaisha Emitter-geschalteter Thyristor und Verfahren zu seiner Herstellung
JPH05299639A (ja) * 1992-04-22 1993-11-12 Naoshige Tamamushi 縦型構造のｍｏｓ制御サイリスタ
EP0736909A2 (de) * 1995-04-05 1996-10-09 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate
EP0756330A2 (de) * 1995-07-19 1997-01-29 Mitsubishi Denki Kabushiki Kaisha Leistungs-Halbleiterbauteil mit isoliertem Graben-Gate und Verfahren zur Herstellung desselben
US5874751A (en) * 1995-04-05 1999-02-23 Fuji Electric Co., Ltd. Insulated gate thyristor
EP0785582A3 (de) * 1996-01-16 1999-08-04 Harris Corporation MOS-gesteuerter Thyristor mit Grabengate
US6693310B1 (en) 1995-07-19 2004-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
DE102009055328A1 (de) * 2009-12-28 2011-06-30 Infineon Technologies Austria Ag Halbleiterbauelement mit einer Emittersteuerelektrode

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JP3214343B2 (ja) * 1996-03-25 2001-10-02 富士電機株式会社 絶縁ゲート型サイリスタ
JPH10256550A (ja) * 1997-01-09 1998-09-25 Toshiba Corp 半導体装置
GB2327295A (en) * 1997-07-11 1999-01-20 Plessey Semiconductors Ltd MOS controllable power semiconductor device
DE19750827A1 (de) * 1997-11-17 1999-05-20 Asea Brown Boveri Leistungshalbleiterbauelement mit Emitterinjektionssteuerung
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
EP2172976A3 (de) * 1998-09-10 2010-05-05 Mitsubishi Denki Kabushiki Kaisha Halbleiterbauelement
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6809348B1 (en) * 1999-10-08 2004-10-26 Denso Corporation Semiconductor device and method for manufacturing the same
JP4088011B2 (ja) * 2000-02-16 2008-05-21 株式会社東芝 半導体装置及びその製造方法
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
JP4028333B2 (ja) * 2002-09-02 2007-12-26 株式会社東芝 半導体装置
JP3927111B2 (ja) * 2002-10-31 2007-06-06 株式会社東芝 電力用半導体装置
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US8133789B1 (en) * 2003-04-11 2012-03-13 Purdue Research Foundation Short-channel silicon carbide power mosfet
JP2005340626A (ja) * 2004-05-28 2005-12-08 Toshiba Corp 半導体装置
JP4867140B2 (ja) * 2004-07-01 2012-02-01 富士電機株式会社 半導体装置
JP2007184486A (ja) * 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP4284689B2 (ja) * 2006-03-24 2009-06-24 富士フイルム株式会社 絶縁ゲート型サイリスタ
US7982528B2 (en) * 2006-05-18 2011-07-19 Stmicroelectronics, S.R.L. Three-terminal power device with high switching speed and manufacturing process
US7705426B2 (en) * 2006-11-10 2010-04-27 International Business Machines Corporation Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device
US7968940B2 (en) * 2007-07-05 2011-06-28 Anpec Electronics Corporation Insulated gate bipolar transistor device comprising a depletion-mode MOSFET
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
JP5333342B2 (ja) 2009-06-29 2013-11-06 株式会社デンソー 半導体装置
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
TWI404205B (zh) * 2009-10-06 2013-08-01 Anpec Electronics Corp 絕緣閘雙極電晶體與快速逆向恢復時間整流器之整合結構及其製作方法
WO2011058852A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102011079747A1 (de) 2010-07-27 2012-02-02 Denso Corporation Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür
JP5631752B2 (ja) * 2011-01-12 2014-11-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
TWI430449B (zh) * 2011-09-29 2014-03-11 Anpec Electronics Corp 橫向堆疊式超級接面功率半導體元件
US9184255B2 (en) * 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
FR2981200B1 (fr) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
JP2013258333A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 電力用半導体装置
JP5978031B2 (ja) * 2012-07-03 2016-08-24 株式会社日立製作所 半導体装置
US9911838B2 (en) 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
US9082648B2 (en) * 2013-02-27 2015-07-14 Pakal Technologies Llc Vertical insulated-gate turn-off device having a planar gate
US9041120B2 (en) * 2013-07-25 2015-05-26 Infineon Technologies Ag Power MOS transistor with integrated gate-resistor
CN103956381B (zh) * 2014-05-07 2017-01-18 电子科技大学 一种mos栅控晶闸管
JP6164372B2 (ja) * 2014-09-17 2017-07-19 富士電機株式会社 半導体装置および半導体装置の製造方法
US10529839B2 (en) * 2015-05-15 2020-01-07 Fuji Electric Co., Ltd. Semiconductor device
JP6574744B2 (ja) 2016-09-16 2019-09-11 株式会社東芝 半導体装置
CN107978632B (zh) * 2017-11-30 2020-06-16 电子科技大学 多沟道的横向高压器件
WO2019157222A1 (en) * 2018-02-07 2019-08-15 Ipower Semiconductor Igbt devices with 3d backside structures for field stop and reverse conduction
JP6952667B2 (ja) 2018-09-19 2021-10-20 株式会社東芝 半導体装置
CN110504312B (zh) * 2019-08-29 2020-09-15 电子科技大学 一种具有短路自保护能力的横向igbt
JP7364488B2 (ja) * 2020-02-05 2023-10-18 株式会社東芝 半導体装置
JP7297709B2 (ja) * 2020-03-19 2023-06-26 株式会社東芝 半導体装置及び半導体回路
JP7459703B2 (ja) * 2020-07-15 2024-04-02 富士電機株式会社 半導体装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574100A (en) 1980-06-10 1982-01-09 Sharp Kk Voice information output device
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
JPS5778172A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Gate turn-off thyristor
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
JPS60115263A (ja) * 1983-11-28 1985-06-21 Toshiba Corp 半導体装置
JPS6276557A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフ素子
US4760431A (en) * 1985-09-30 1988-07-26 Kabushiki Kaisha Toshiba Gate turn-off thyristor with independent turn-on/off controlling transistors
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
JPS6320917A (ja) * 1986-07-15 1988-01-28 Matsushita Electric Ind Co Ltd 位相比較器
JPS62247567A (ja) 1986-08-21 1987-10-28 Semiconductor Res Found 静電誘導サイリスタ
JPS63182861A (ja) * 1987-01-26 1988-07-28 Toshiba Corp ゼロクロス型サイリスタ
JP2579979B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子の製造方法
US4847671A (en) * 1987-05-19 1989-07-11 General Electric Company Monolithically integrated insulated gate semiconductor device
JPH01109769A (ja) * 1987-10-22 1989-04-26 Mitsubishi Electric Corp 半導体装置
JP2706120B2 (ja) * 1988-02-12 1998-01-28 アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト Ｇｔｏパワーサイリスタ
JPH0783117B2 (ja) * 1988-04-15 1995-09-06 三菱電機株式会社 半導体装置
EP0339962A3 (de) * 1988-04-27 1990-09-26 General Electric Company Feldeffekthalbleitereinrichtung
US4963950A (en) * 1988-05-02 1990-10-16 General Electric Company Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
US4942445A (en) * 1988-07-05 1990-07-17 General Electric Company Lateral depletion mode tyristor
JPH02163974A (ja) * 1988-12-16 1990-06-25 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタおよびその製造方法
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement
EP0409010A1 (de) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
GB2243021A (en) 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JEDM 89, 293-295 *
JEEE El. Dev. Lett., Vol. 11, No. 2, 1990, pp 75-77 *
JEEE Tr. o. El. Dev., Vol. ED-33, No. 10, 1986, pp 1609-1618 *
JEEE Tr. o. El. Dev., Vol. ED-33, No. 10, 1989, pp 1609-1618 *

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0565349A3 (de) * 1992-04-07 1994-12-14 Toyo Electric Mfg Co Ltd
EP0565349A2 (de) * 1992-04-07 1993-10-13 Toyo Denki Seizo Kabushiki Kaisha MOS-kontrollierter Thyristor
JPH05299639A (ja) * 1992-04-22 1993-11-12 Naoshige Tamamushi 縦型構造のｍｏｓ制御サイリスタ
JPH0685433B2 (ja) * 1992-04-22 1994-10-26 尚茂 玉蟲 縦型構造のｍｏｓ制御サイリスタ
EP0569116A1 (de) * 1992-05-06 1993-11-10 Mitsubishi Denki Kabushiki Kaisha Emitter-geschalteter Thyristor und Verfahren zu seiner Herstellung
US5345095A (en) * 1992-05-06 1994-09-06 Mitsubishi Denki Kabushiki Kaisha Self arc-extinguishing thyristor and method of manufacturing the same
US5874751A (en) * 1995-04-05 1999-02-23 Fuji Electric Co., Ltd. Insulated gate thyristor
EP0736909A2 (de) * 1995-04-05 1996-10-09 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate
EP0736909A3 (de) * 1995-04-05 1997-10-08 Fuji Electric Co Ltd Thyristor mit isoliertem Gate
EP0756330A3 (de) * 1995-07-19 1999-03-10 Mitsubishi Denki Kabushiki Kaisha Leistungs-Halbleiterbauteil mit isoliertem Graben-Gate und Verfahren zur Herstellung desselben
EP0756330A2 (de) * 1995-07-19 1997-01-29 Mitsubishi Denki Kabushiki Kaisha Leistungs-Halbleiterbauteil mit isoliertem Graben-Gate und Verfahren zur Herstellung desselben
EP1030373A1 (de) * 1995-07-19 2000-08-23 Mitsubishi Denki Kabushiki Kaisha Leistung-Halbleiter-Diode mit isoliertem Graben-Gate und Verfahren zur Herstellung derselben
US6265735B1 (en) * 1995-07-19 2001-07-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
EP1154491A1 (de) * 1995-07-19 2001-11-14 Mitsubishi Denki Kabushiki Kaisha Halbleiterbauteil und Verfahren zu seiner Herstellung
US6445012B2 (en) 1995-07-19 2002-09-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US6693310B1 (en) 1995-07-19 2004-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US6867437B2 (en) 1995-07-19 2005-03-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6897493B2 (en) 1995-07-19 2005-05-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US7253031B2 (en) 1995-07-19 2007-08-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
EP0785582A3 (de) * 1996-01-16 1999-08-04 Harris Corporation MOS-gesteuerter Thyristor mit Grabengate
DE102009055328A1 (de) * 2009-12-28 2011-06-30 Infineon Technologies Austria Ag Halbleiterbauelement mit einer Emittersteuerelektrode

Also Published As

Publication number Publication date
DE4130889C2 (de) 1999-06-10
US5381026A (en) 1995-01-10
US6236069B1 (en) 2001-05-22
US5793065A (en) 1998-08-11
US5464994A (en) 1995-11-07

Similar Documents

Publication Publication Date Title
DE4130889A1 (de) Isolierschicht-thyristor
JPS6457674A (en) Conductivity-modulation mosfet
JPS5743461A (en) Controllable semiconductor switch
US5072268A (en) MOS gated bipolar transistor
WO1997006554A3 (en) Semiconductor device provided with transparent switching element
EP0371785A3 (de) Lateraler Leitfähigkeitsmodulations-MOSFET
SE8703269D0 (sv) Forbettrad konstruktion hos sos-transistor
JPS55133574A (en) Insulated gate field effect transistor
EP0862221A4 (de) Halbleitervorrichtung
MY104863A (en) Semiconductor device
JPS5726472A (en) Semiconductor device
JPS57176781A (en) Superconductive device
JPS57181160A (en) Transistor
JPS63209169A (ja) 絶縁ゲ−ト型サイリスタ
RU2065642C1 (ru) Биполярный транзистор с изолированным диэлектриком затвором
JPS56126977A (en) Junction type field effect transistor
GB2049283A (en) High voltage dielectrically isolated solid-state switch
JPS5515202A (en) Semiconductor controlling rectifier
JPS54143078A (en) Field effect switching element
JPS6427270A (en) Field-effect type semiconductor device
JPS56112762A (en) Semiconductor device
JPS5376675A (en) High breakdown voltage field effect power transistor
JPS55108773A (en) Insulating gate type field effect transistor
JPS5478986A (en) Triac
JPS5724565A (en) Semiconductor circuit element

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01L 29/78

8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 4143612

Format of ref document f/p: P

Q171 Divided out to:

Ref country code: DE

Ref document number: 4143612

AH Division in

Ref country code: DE

Ref document number: 4143612

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
AH Division in

Ref country code: DE

Ref document number: 4143612

Format of ref document f/p: P

8339 Ceased/non-payment of the annual fee