JP5978031B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5978031B2 JP5978031B2 JP2012149002A JP2012149002A JP5978031B2 JP 5978031 B2 JP5978031 B2 JP 5978031B2 JP 2012149002 A JP2012149002 A JP 2012149002A JP 2012149002 A JP2012149002 A JP 2012149002A JP 5978031 B2 JP5978031 B2 JP 5978031B2
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- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 109
- 230000002441 reversible effect Effects 0.000 description 34
- 230000003071 parasitic effect Effects 0.000 description 25
- 238000011084 recovery Methods 0.000 description 25
- 230000015556 catabolic process Effects 0.000 description 18
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 17
- 230000000694 effects Effects 0.000 description 13
- 238000002513 implantation Methods 0.000 description 12
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- 238000002955 isolation Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 7
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000000691 measurement method Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
- H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7819—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Description
上記給電領域は、長手方向端部において、フィールド酸化膜に対し、距離を空けて給電領域が形成されており、望ましくは、上記給電領域は、長手方向に、所定の間隔を置いて、断続的に形成され、本給電領域が、第1半導体領域に適用されることを特徴とする。
1−2 スイッチ素子(p型LDMOSFET)
3 出力点
4−1 負高圧電源線
4−2 正高圧電源線
5 n型半導体基板
6 p型ドリフト層
7 p型給電層
8 n型ウェル層
9 p型給電層
10 n型給電層
11 フィールド酸化膜
12 ゲート電極
13 ゲート酸化膜
14 ソース電極
15 ドレイン電極
16 ソース領域
17 ドレイン領域
18 n型ドリフト層
19 p型ドリフト層
20 p型給電層
21 n型給電層
22 素子分離領域
23 高温領域
24 p型ドリフト層
25 p型給電層
26 n型ウェル層
27 n型給電層
28 p型給電層
29 ゲート電極
30 素子分離領域
31 ゲート電極
32 ゲート酸化膜
33 ソース電極
34 ドレイン領域
35 ソース領域
36 端部スペース
37 ドレイン領域端部の給電領域とフィールド酸化膜間距離をパラメータとしたLDMOSFET
38 寄生ダイオード
39 高電圧パルス電源
40 高電圧DC電源
41 p型ウェル層
42 カソード電極
43 カソード領域
44 アノード電極
45 アノード領域
46 カソード電極
47 アノード電極
48 素子周辺電極
Claims (6)
- 半導体基板と、
半導体基板上に存在する半導体領域の表面部分に選択的に設けられたフィールド酸化膜と、
前記フィールド酸化膜の近傍に設けられ、かつ、p型の給電層を有するp型ドレイン層と、
前記フィールド酸化膜の近傍に設けられ、かつ、p型の給電層(28)を有するp型のソース層と、
ゲート酸化膜を介して、かつ、ウェル領域に対向するように設けられたゲート電極とを有し、
前記p型の給電層には、前記半導体基板上のp型ドリフト領域上に選択的にp+層が設けられ、
前記p型給電層の前記p+層が設けられた部分および前記p+層が設けられずに前記p型ドリフト領域が表れている部分の両方と前記ドレイン電極とが電気的に接続していることを特徴とする半導体装置。 - 前記p型ドリフト領域は、前記フィールド酸化膜に接して設けられ、かつ、前記フィールド酸化膜に対して前記半導体基板側に設けられていることを特徴とする請求項1記載の半導体装置。
- 前記p型給電層は幅よりもその幅方向と直角な長手方向の寸法の方が大きい細長い層形状となっており、そのp型給電層の両端部およびそれに近い領域には前記p+層が設けられずに前記p型ドリフト層が表れている部分とし、かつ、前記p型給電層の中間部分の領域を前記p+層が設けられた部分とすることを特徴とする請求項1記載の半導体装置。
- 前記p型給電層は幅よりもその幅方向と直角な長手方向の寸法の方が大きい細長い形状となっており、
前記p+層が設けられた部分が複数あり、
前記p+層が設けられずに前記p型ドリフト領域が表れている部分が複数あり、
前記長手方向に向かって、前記p+層が設けられた部分と前記p+層が設けられずに前記p型ドリフト領域が表れている部分とが交互に設けられていることを特徴とする請求項1記載の半導体装置。 - アノード電極、ゲート電極およびカソード電極とを有し、前記ゲート電極および前記カソード電極とを電気的に接続することにより、ダイオードとして機能することを特徴とする請求項1記載の半導体装置。
- 前記半導体基板がSOI基板であることを特徴とする請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012149002A JP5978031B2 (ja) | 2012-07-03 | 2012-07-03 | 半導体装置 |
KR1020130077224A KR101498371B1 (ko) | 2012-07-03 | 2013-07-02 | 반도체 장치 |
US13/935,264 US9293578B2 (en) | 2012-07-03 | 2013-07-03 | Semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
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JP2012149002A JP5978031B2 (ja) | 2012-07-03 | 2012-07-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2014011411A JP2014011411A (ja) | 2014-01-20 |
JP5978031B2 true JP5978031B2 (ja) | 2016-08-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012149002A Expired - Fee Related JP5978031B2 (ja) | 2012-07-03 | 2012-07-03 | 半導体装置 |
Country Status (3)
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US (1) | US9293578B2 (ja) |
JP (1) | JP5978031B2 (ja) |
KR (1) | KR101498371B1 (ja) |
Family Cites Families (20)
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US4926074A (en) * | 1987-10-30 | 1990-05-15 | North American Philips Corporation | Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
JP3232343B2 (ja) * | 1994-05-31 | 2001-11-26 | 日本電信電話株式会社 | 横形mos電界効果トランジスタ |
JP2000022142A (ja) * | 1998-06-29 | 2000-01-21 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
JP4488660B2 (ja) * | 2000-09-11 | 2010-06-23 | 株式会社東芝 | Mos電界効果トランジスタ |
JP4144225B2 (ja) | 2002-01-29 | 2008-09-03 | 株式会社デンソー | ダイオードおよびその製造方法 |
JP2004079800A (ja) * | 2002-08-19 | 2004-03-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
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JP2005302914A (ja) * | 2004-04-09 | 2005-10-27 | Mitsubishi Electric Corp | Mos電界効果トランジスタとその製造方法 |
JP2008004600A (ja) * | 2006-06-20 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008124421A (ja) * | 2006-10-17 | 2008-05-29 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008166627A (ja) * | 2006-12-29 | 2008-07-17 | Denso Corp | 半導体装置 |
US7683427B2 (en) * | 2007-09-18 | 2010-03-23 | United Microelectronics Corp. | Laterally diffused metal-oxide-semiconductor device and method of making the same |
JP5525736B2 (ja) * | 2009-02-18 | 2014-06-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
JP5310291B2 (ja) | 2009-06-18 | 2013-10-09 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2011029466A (ja) * | 2009-07-28 | 2011-02-10 | Hitachi Ltd | 半導体装置 |
JP5213840B2 (ja) * | 2009-12-22 | 2013-06-19 | 三菱電機株式会社 | 半導体装置 |
JP5150675B2 (ja) * | 2010-03-25 | 2013-02-20 | 株式会社東芝 | 半導体装置 |
US8164125B2 (en) * | 2010-05-07 | 2012-04-24 | Power Integrations, Inc. | Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit |
JP2011238771A (ja) * | 2010-05-11 | 2011-11-24 | Hitachi Ltd | 半導体装置 |
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2012
- 2012-07-03 JP JP2012149002A patent/JP5978031B2/ja not_active Expired - Fee Related
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2013
- 2013-07-02 KR KR1020130077224A patent/KR101498371B1/ko not_active IP Right Cessation
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US9293578B2 (en) | 2016-03-22 |
US20140015049A1 (en) | 2014-01-16 |
KR20140004589A (ko) | 2014-01-13 |
JP2014011411A (ja) | 2014-01-20 |
KR101498371B1 (ko) | 2015-03-03 |
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