JP6952667B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6952667B2 JP6952667B2 JP2018174703A JP2018174703A JP6952667B2 JP 6952667 B2 JP6952667 B2 JP 6952667B2 JP 2018174703 A JP2018174703 A JP 2018174703A JP 2018174703 A JP2018174703 A JP 2018174703A JP 6952667 B2 JP6952667 B2 JP 6952667B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- type
- semiconductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 174
- 239000012535 impurity Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 description 268
- 230000004888 barrier function Effects 0.000 description 24
- 239000000758 substrate Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 108091006146 Channels Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Description
図3(a)は、図3(b)中に示すA−A線に沿った断面を示す模式図である。
図3(b)は、半導体装置1の上面を示す模式平面図である。
図3(c)は、図3(b)中に示すB−B線に沿った断面図であり、第1ゲート電極MGの断面を表している。
図3(d)は、図3(b)中に示すC−C線に沿った断面図であり、第2ゲート電極CGの断面を表している。
Claims (9)
- 第1導電形の第1半導体層と、
前記第1半導体層上に設けられた第2導電形の第2半導体層と、
前記第2半導体層上に選択的に設けられた第1導電形の第3半導体層と、
前記第2半導体層上に選択的に設けられ、前記第2半導体層上に前記第3半導体層と並べて配置された第2導電形の第4半導体層と、
を含む半導体部と、
前記半導体部中に設けられ、前記第2半導体層と第1絶縁膜を介して向き合い、前記第1半導体層中に位置する下端を有する第1制御電極と、
前記半導体部中に設けられ、前記第2半導体層と第2絶縁膜を介して向き合い、前記第1半導体層中に位置する下端を有する第2制御電極と、
を備え、
前記第1制御電極および第2制御電極は、前記第1半導体層と前記第2半導体層の境界に沿った第1方向に交互に配置され、前記第1制御電極と前記第2制御電極を電気的に絶縁する第3絶縁膜に接するように配置された半導体装置。 - 前記第3半導体層および前記第4半導体層は、前記第1方向に交互に配置される請求項1記載の半導体装置。
- 前記第1制御電極は、前記第1絶縁膜を介して前記第3半導体層に向き合い、
前記第2制御電極は、前記第2絶縁膜を介して前記第4半導体層に向き合うように配置される請求項2記載の半導体装置。 - 前記半導体部に電気的に接続された第1電極および第2電極をさらに備え、
前記半導体部は、前記第1電極と前記第2電極との間に位置し、
前記第2電極は、前記第3半導体層および前記第4半導体層に接する請求項1〜3のいずれか1つに記載の半導体装置。 - 前記半導体部は、前記第1電極と前記第1半導体層との間に位置し、前記第1電極に接する第2導電形の第5半導体層をさらに含む請求項4記載の半導体装置。
- 前記半導体部は、前記第1半導体層と前記第5半導体層との間に設けられた第1導電形の第6半導体層をさらに備え、
前記第6半導体層は、前記第1半導体層の第1導電形不純物よりも高濃度の第1導電形不純物を含む請求項5記載の半導体装置。 - 前記第1電極から前記第2電極へ向かう第2方向における前記第5半導体層の層厚は、前記第2方向における前記第6半導体層の層厚よりも薄い請求項6記載の半導体装置。
- 前記半導体部は、前記第1半導体層と前記第2半導体層との間にもうけられた第1導電形の第7半導体層をさらに含み、
前記第7半導体層は、前記第1半導体層の第1導電形不純物よりも高濃度の第1導電形不純物を含む請求項1〜7のいずれか1つに記載の半導体装置。 - 第1導電形の第1半導体層と、
前記第1半導体層上に設けられた第2導電形の第2半導体層と、
前記第2半導体層上に選択的に設けられた第1導電形の第3半導体層と、
前記第2半導体層上に選択的に設けられ、前記第2半導体層上に前記第3半導体層と並べて配置された第2導電形の第4半導体層と、
を含む半導体部と、
前記半導体部中に設けられ、前記第2半導体層と第1絶縁膜を介して向き合い、前記第1半導体層中に位置する下端を有する第1制御電極と、
前記半導体部中に設けられ、前記第2半導体層と第2絶縁膜を介して向き合い、前記第1半導体層中に位置する下端を有する第2制御電極と、
前記半導体部中に設けられ、前記第2半導体層と第3絶縁膜を介して向き合い、前記第1半導体層中に位置する下端を有し、前記第1制御電極および前記第2制御電極から離れた位置に設けられた第3制御電極と、
を備え、
前記第1制御電極および第2制御電極は、前記第1半導体層と前記第2半導体層の境界に沿った第1方向に交互に配置され、前記第1制御電極と前記第2制御電極を電気的に絶縁する第4絶縁膜に接するように配置され、
前記第1制御電極は、前記第1絶縁膜を介して前記第3半導体層および前記第4半導体層の少なくともいずれか一方に向き合うように配置され、
前記第2制御電極は、前記第2絶縁膜を介して前記第3半導体層および前記第4半導体層の少なくともいずれか一方に向き合うように配置され、
前記第3制御電極は、前記第3絶縁膜を介して前記第3半導体層および前記第4半導体層のいずれにも向き合うことのない位置に配置された半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018174703A JP6952667B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
CN201910022474.9A CN110931554B (zh) | 2018-09-19 | 2019-01-10 | 半导体装置 |
US16/278,795 US10903348B2 (en) | 2018-09-19 | 2019-02-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018174703A JP6952667B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020047756A JP2020047756A (ja) | 2020-03-26 |
JP6952667B2 true JP6952667B2 (ja) | 2021-10-20 |
Family
ID=69772356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018174703A Active JP6952667B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10903348B2 (ja) |
JP (1) | JP6952667B2 (ja) |
CN (1) | CN110931554B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7210342B2 (ja) | 2019-03-18 | 2023-01-23 | 株式会社東芝 | 半導体装置 |
US11101375B2 (en) | 2019-03-19 | 2021-08-24 | Kabushiki Kaisha Toshiba | Semiconductor device and method of controlling same |
JP7346170B2 (ja) | 2019-08-30 | 2023-09-19 | 株式会社東芝 | 半導体装置及び半導体モジュール |
JP7337619B2 (ja) | 2019-09-17 | 2023-09-04 | 株式会社東芝 | 半導体装置 |
JP7387501B2 (ja) | 2020-03-18 | 2023-11-28 | 株式会社東芝 | 半導体装置およびその制御方法 |
JP7335190B2 (ja) | 2020-03-23 | 2023-08-29 | 株式会社東芝 | 半導体装置 |
JP7330155B2 (ja) | 2020-09-16 | 2023-08-21 | 株式会社東芝 | 半導体装置及び半導体回路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5381026A (en) | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
JP3297060B2 (ja) | 1990-09-17 | 2002-07-02 | 株式会社東芝 | 絶縁ゲート型サイリスタ |
DE102011079747A1 (de) | 2010-07-27 | 2012-02-02 | Denso Corporation | Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür |
JP5768395B2 (ja) | 2010-07-27 | 2015-08-26 | 株式会社デンソー | 半導体装置およびその制御方法 |
US9184255B2 (en) * | 2011-09-30 | 2015-11-10 | Infineon Technologies Austria Ag | Diode with controllable breakdown voltage |
JP2013251395A (ja) | 2012-05-31 | 2013-12-12 | Denso Corp | 半導体装置 |
JP2014060336A (ja) * | 2012-09-19 | 2014-04-03 | Toshiba Corp | 半導体装置 |
JP5941447B2 (ja) * | 2013-09-06 | 2016-06-29 | 株式会社東芝 | 半導体装置 |
US10530360B2 (en) * | 2016-02-29 | 2020-01-07 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
US10276681B2 (en) | 2016-02-29 | 2019-04-30 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
JP6673499B2 (ja) * | 2016-11-17 | 2020-03-25 | 富士電機株式会社 | 半導体装置 |
-
2018
- 2018-09-19 JP JP2018174703A patent/JP6952667B2/ja active Active
-
2019
- 2019-01-10 CN CN201910022474.9A patent/CN110931554B/zh active Active
- 2019-02-19 US US16/278,795 patent/US10903348B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20200091325A1 (en) | 2020-03-19 |
CN110931554B (zh) | 2023-12-01 |
CN110931554A (zh) | 2020-03-27 |
US10903348B2 (en) | 2021-01-26 |
JP2020047756A (ja) | 2020-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6952667B2 (ja) | 半導体装置 | |
CN107924942B (zh) | 半导体装置 | |
JP5605073B2 (ja) | 半導体装置 | |
US6815769B2 (en) | Power semiconductor component, IGBT and field-effect transistor | |
JP6728953B2 (ja) | 半導体装置及びその製造方法 | |
US9312337B2 (en) | Semiconductor device | |
US10985268B2 (en) | Semiconductor device | |
JP2013201360A (ja) | 半導体装置 | |
JP2006245477A (ja) | 半導体装置 | |
TW201535723A (zh) | 半導體裝置及其製造方法 | |
US20170179266A1 (en) | Semiconductor device and manufacturing method for semiconductor device | |
US20110233607A1 (en) | Semiconductor device and method for manufacturing same | |
JP2018152426A (ja) | 半導体装置 | |
JP2008021981A (ja) | 絶縁ゲートバイポーラトランジスタ及びその製造方法 | |
JP6733829B2 (ja) | 半導体装置 | |
JP2020150222A (ja) | 半導体装置及びその製造方法 | |
JP2020072137A (ja) | 半導体装置 | |
JP4857590B2 (ja) | 半導体素子 | |
JP7330092B2 (ja) | 半導体装置 | |
JP2011176026A (ja) | 半導体素子の製造方法 | |
JP2014011418A (ja) | 半導体装置およびその製造方法 | |
JP4761011B2 (ja) | サイリスタを有する半導体装置及びその製造方法 | |
JP7352437B2 (ja) | 半導体装置 | |
JP2007053226A (ja) | 半導体装置およびその製造方法 | |
JP5467542B2 (ja) | 横型半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200901 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210701 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210823 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210831 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210928 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6952667 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |