JP4867140B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4867140B2 JP4867140B2 JP2004196095A JP2004196095A JP4867140B2 JP 4867140 B2 JP4867140 B2 JP 4867140B2 JP 2004196095 A JP2004196095 A JP 2004196095A JP 2004196095 A JP2004196095 A JP 2004196095A JP 4867140 B2 JP4867140 B2 JP 4867140B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- region
- well
- semiconductor device
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 261
- 239000010410 layer Substances 0.000 claims description 111
- 239000000758 substrate Substances 0.000 claims description 97
- 239000002344 surface layer Substances 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 7
- 230000002441 reversible effect Effects 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Description
I>I0のとき VM>VD
ここで、I0は当該半導体装置が通常状態で使用される電流値であり、I0≒2・Irate程度が適当である。
図1は、本発明の実施の形態1にかかる半導体装置の平面構成の要部を示す平面図である。図1に示すように、この半導体装置は、特に限定しないが、例えば第1および第2の2個の半導体チップ1,2で構成されている。第1の半導体チップ1には、例えばサイリスタ形成領域3aとダイオード形成領域3bが設けられている。
図20は、本発明の実施の形態2にかかる半導体装置の断面構成を示す縦断面図である。図20に示すように、n型の半導体基板11の表面層には、p型のウェル領域113が選択的に設けられている。ウェル領域113内の表面層には、n型のカソード領域(エミッタ領域)114が選択的に設けられている。ウェル領域113の、カソード領域114と半導体基板11との間のチャネルが形成される領域上には、例えば酸化膜からなるゲート絶縁膜115が設けられている。このゲート絶縁膜115の上には、制御電極であるゲート電極116が設けられている。
図21は、本発明の実施の形態3にかかる半導体装置の断面構成を示す縦断面図である。図22は、本発明の実施の形態3にかかる半導体装置のダイオードの要部構成を示す部分平面図である。図21に示すように、n型の半導体基板11の内部には、埋め込み酸化膜261が選択的に設けられている。また、半導体基板11の表面層には、p型のウェル領域213a,213b,213cが選択的に設けられている。これらのうち、ウェル領域213b,213cは、埋め込み酸化膜261上に設けられている。
図23は、本発明の実施の形態4にかかる半導体装置の断面構成を示す縦断面図である。図23に示すように、n型の半導体基板11の表面層には、トレンチ溝12が選択的に形成されている。このトレンチ溝12の側壁に接して半導体基板11の表面層には、トレンチ溝12よりも浅いp型のウェル領域13が選択的に設けられている。また、トレンチ溝12の側壁に接してウェル領域13内の表面層には、n型のソース領域352が選択的に設けられている。
図24は、本発明の実施の形態5にかかる半導体装置の断面構成を示す縦断面図である。図24に示すように、n型の半導体基板11の表面層に、実施の形態4と同様に、トレンチ溝12内にゲート絶縁膜15を介してゲート電極16が埋められてなるトレンチゲート構造が設けられている。また、トレンチ溝12の側壁に接してn型の半導体基板11の表面層に、トレンチ溝12よりも浅いp型のウェル領域13が設けられている。
図25は、本発明の実施の形態6にかかる半導体装置の断面構成を示す縦断面図である。図25に示すように、n型の半導体基板11の表面層に、トレンチ溝12、ゲート絶縁膜15およびゲート電極16よりなるトレンチゲート構造と、トレンチ溝12よりも浅いp型のウェル領域13が形成されており、そのウェル領域13がn型のカソード領域514により、半導体基板11に接する第1のウェル部513aと、半導体基板11に接しない第2のウェル部513bに分割されていることは、実施の形態4と同様である。
図26は、本発明の実施の形態7にかかる半導体装置の断面構成を示す縦断面図である。図26に示すように、n型の半導体基板11の表面層に、トレンチ溝12、ゲート絶縁膜15およびゲート電極16よりなるトレンチゲート構造と、トレンチ溝12よりも浅いp型のウェル領域13が設けられている。ウェル領域13の内部には、埋め込み酸化膜661が選択的に設けられている。埋め込み酸化膜661上には、ゲート電極655が設けられており、さらにその上にはゲート絶縁膜654が設けられている。
12,212 トレンチ溝
13,113,213a,213b,213c pウェル領域
14,114,214 nエミッタ領域(nカソード領域)
15,115,215 ゲート絶縁膜(絶縁膜)
16,116,216 制御電極(ゲート電極)
17,117,217 第1のウェル電極(ウェル電極)
18,118,218,331,431,531,631 エミッタ電極(カソード電極)
20 pウェル層(pアノード層)
21 第2のウェル電極(アノード電極)
31 第1の端子(カソード端子)
32 第2の端子(アノード端子)
41 自己消弧型デバイス(MOSFET)
42a,42b,42c 整流素子(ダイオード)
313a,413a,513a,613a 第1のウェル部
313b,413b,513b,613b 第2のウェル部
314,414,514 nカソード領域
317a,417,517,617 ウェル電極
352,452,552,652 nソース領域
Claims (20)
- 第1導電型の半導体基板の表面層に選択的に設けられた第2導電型のウェル領域、前記ウェル領域内の表面層に選択的に設けられた第1導電型のエミッタ領域、前記ウェル領域と前記エミッタ領域の一部を覆う絶縁膜を介して設けられた制御電極、前記ウェル領域に電気的に接続する第1のウェル電極、前記エミッタ領域に電気的に接続するエミッタ電極、前記半導体基板の裏面側に設けられた第2導電型のウェル層、および前記ウェル層に電気的に接続された第2のウェル電極を有する絶縁ゲート型バイポーラトランジスタと、
第1の端子と、
前記エミッタ電極と前記第1の端子との間に接続された自己消弧型デバイスと、
前記第1のウェル電極と前記第1の端子との間に接続された整流素子と、
前記第2のウェル電極に接続された第2の端子と、を具備し、
前記整流素子のえん層電圧は、0.6V以上であり、
前記絶縁ゲート型バイポーラトランジスタは、前記第1の端子と前記第2の端子との間を流れる電流が小さいときにサイリスタとして動作し、一方、前記電流が大きいときにバイポーラトランジスタとして動作し、それらサイリスタとして動作する状態とバイポーラトランジスタとして動作する状態とが前記電流に基づいて自動的に切り替わることを特徴とする半導体装置。 - 当該半導体装置を流れる電流の電流I、当該半導体装置の定格電流Irate、前記自己消弧型デバイスのみに電流Iを流した場合の電圧降下量VMおよび前記整流素子のみに電流
Iを流した場合の電圧降下量VDに対して、前記自己消弧型デバイスと前記整流素子の電
流−電圧特性が、I<2・IrateのときにはVM+0.6V<VDを満たし、一方、I>2・IrateのときにはVM>VDを満たすことを特徴とする請求項1に記載の半導体装置。 - 前記絶縁ゲート型バイポーラトランジスタは、当該半導体装置の制限電流値以下の電流で、前記ウェル電極と前記エミッタ電極とを短絡させた状態では、トランジスタとして動作することを特徴とする請求項1または2に記載の半導体装置。
- 前記整流素子の、当該半導体装置の制限電流と同じ流量の電流が流れた場合の電圧降下量は、前記自己消弧型デバイスの耐圧以下であることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
- 前記自己消弧型デバイスは、絶縁ゲート型電界効果トランジスタであることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記絶縁ゲート型電界効果トランジスタのしきい値は、前記絶縁ゲート型バイポーラトランジスタのしきい値よりも高いことを特徴とする請求項5に記載の半導体装置。
- 前記絶縁ゲート型電界効果トランジスタの制限電流値は、前記絶縁ゲート型バイポーラトランジスタの制限電流値よりも大きいことを特徴とする請求項5に記載の半導体装置。
- 前記制御電極は、前記絶縁ゲート型電界効果トランジスタに設けられた制御電極に電気的に接続されていることを特徴とする請求項5に記載の半導体装置。
- 当該半導体装置がオン状態のときに、前記絶縁ゲート型電界効果トランジスタは、飽和領域で動作しないことを特徴とする請求項5〜8のいずれか一つに記載の半導体装置。
- 前記整流素子はダイオードであり、当該半導体装置の前記第2の端子と前記第1の端子との間に定格電流の順方向電流が流れるときに、該ダイオードの順方向または逆方向に有意な電流が流れないことを特徴とする請求項1〜9のいずれか一つに記載の半導体装置。
- 前記整流素子はダイオードであり、該ダイオードの正極が前記第1のウェル電極に接続され、かつ負極は前記第1の端子に接続されていることを特徴とする請求項1〜10のいずれか一つに記載の半導体装置。
- 前記整流素子はダイオードであり、該ダイオードの負極が前記第1のウェル電極に接続され、かつ正極は前記第1の端子に接続されていることを特徴とする請求項1〜10のいずれか一つに記載の半導体装置。
- 第1導電型の半導体基板の表面層に選択的に形成されたトレンチ溝の側壁に接して該表面層に選択的に設けられた、前記トレンチ溝よりも浅い第2導電型のウェル領域と、
前記トレンチ溝の側壁に接して前記ウェル領域内の表面層に選択的に設けられた第1導電型のソース領域と、
前記ウェル領域内で前記トレンチ溝の側壁に接するとともに前記ソース領域から分離されて設けられ、かつ同ウェル領域を前記半導体基板と接する第1のウェル部と前記半導体基板に接しない第2のウェル部に分割する第1導電型のカソード領域と、
前記トレンチ側壁に沿って前記ソース領域、前記第2のウェル部、前記カソード領域および前記第1のウェル部の一部を覆う絶縁膜を介して設けられた制御電極と、
前記第1のウェル部に電気的に接続するウェル電極と、
前記ソース領域と前記第2のウェル部に電気的に接続するエミッタ電極と、
前記半導体基板の裏面側に形成された第2導電型のアノード層と、
前記アノード層に電気的に接続されたアノード電極と、
前記エミッタ電極と前記ウェル電極との間に接続されたダイオードと、
を具備し、
前記ダイオードのえん層電圧は、0.6V以上であり、
前記エミッタ電極は、第1の端子に接続され、
前記アノード電極は、第2の端子に接続され、
前記第1の端子と前記第2の端子との間を流れる電流が小さいときにサイリスタとして動作し、一方、前記電流が大きいときにバイポーラトランジスタとして動作し、それらサイリスタとして動作する状態とバイポーラトランジスタとして動作する状態とが前記電流に基づいて自動的に切り替わることを特徴とする半導体装置。 - 前記ダイオードは、前記半導体基板の表面上に酸化膜を介して設けられた第1導電型のポリシリコンと第2導電型のポリシリコンでできていることを特徴とする請求項13に記載の半導体装置。
- 前記ダイオードは、前記半導体基板内に埋め込まれた酸化膜上に設けられた第1導電型のポリシリコンと第2導電型のポリシリコンでできていることを特徴とする請求項13に記載の半導体装置。
- 前記ウェル領域の前記トレンチ溝の側壁に接し、かつ前記ソース領域と前記カソード領域とに挟まれている部分で最も高い不純物濃度Cs-k、および前記エミッタ電極と前記半
導体基板とに挟まれている部分で最も高い不純物濃度Ck-bに対して、Cs-k≦Ck-bであ
ることを特徴とする請求項13〜15のいずれか一つに記載の半導体装置。 - 当該半導体装置がオン状態のときに、前記ソース領域、前記ウェル領域、前記カソード領域、前記絶縁膜および前記制御電極よりなる絶縁ゲート型電界効果トランジスタは、飽和領域で動作しないことを特徴とする請求項13または16に記載の半導体装置。
- 当該半導体装置の前記アノード電極と前記エミッタ電極との間に定格電流の順方向電流が流れるときに、前記ダイオードの順方向または逆方向に有意な電流が流れないことを特徴とする請求項13〜17のいずれか一つに記載の半導体装置。
- 前記ダイオードの正極が前記ウェル電極に接続され、かつ負極は前記エミッタ電極に接続されていることを特徴とする請求項13〜18のいずれか一つに記載の半導体装置。
- 前記ダイオードの負極が前記ウェル電極に接続され、かつ正極は前記エミッタ電極に接続されていることを特徴とする請求項13〜18のいずれか一つに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004196095A JP4867140B2 (ja) | 2004-07-01 | 2004-07-01 | 半導体装置 |
DE102005030411A DE102005030411A1 (de) | 2004-07-01 | 2005-06-30 | Halbleitersystem |
US11/170,064 US7276778B2 (en) | 2004-07-01 | 2005-06-30 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004196095A JP4867140B2 (ja) | 2004-07-01 | 2004-07-01 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006019528A JP2006019528A (ja) | 2006-01-19 |
JP4867140B2 true JP4867140B2 (ja) | 2012-02-01 |
Family
ID=35540400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004196095A Expired - Fee Related JP4867140B2 (ja) | 2004-07-01 | 2004-07-01 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7276778B2 (ja) |
JP (1) | JP4867140B2 (ja) |
DE (1) | DE102005030411A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005007373B4 (de) * | 2005-02-17 | 2013-05-29 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
US8008748B2 (en) * | 2008-12-23 | 2011-08-30 | International Business Machines Corporation | Deep trench varactors |
US9142463B2 (en) | 2010-01-29 | 2015-09-22 | Fuji Electric Co., Ltd. | Semiconductor device |
US8569117B2 (en) * | 2011-10-10 | 2013-10-29 | Pakal Technologies Llc | Systems and methods integrating trench-gated thyristor with trench-gated rectifier |
US20150162429A1 (en) * | 2012-01-26 | 2015-06-11 | Hitachi, Ltd. | Semiconductor Device and Power Conversion Device Using the Same |
TWI553855B (zh) * | 2013-05-06 | 2016-10-11 | 台灣茂矽電子股份有限公司 | 功率半導體及其製造方法 |
CN105814694B (zh) | 2014-10-03 | 2019-03-08 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
JP6610114B2 (ja) * | 2015-09-16 | 2019-11-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10192978B2 (en) * | 2016-01-19 | 2019-01-29 | Mitsubishi Electric Corporation | Semiconductor apparatus |
TWI726515B (zh) * | 2019-12-04 | 2021-05-01 | 台灣茂矽電子股份有限公司 | 瞬態電壓抑制二極體結構及其製造方法 |
CN114783999B (zh) * | 2022-06-20 | 2022-09-30 | 深圳芯能半导体技术有限公司 | 一种内置温度传感器的igbt器件及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4827321A (en) * | 1987-10-29 | 1989-05-02 | General Electric Company | Metal oxide semiconductor gated turn off thyristor including a schottky contact |
US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
JP2739002B2 (ja) | 1991-12-20 | 1998-04-08 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP3163746B2 (ja) * | 1992-06-01 | 2001-05-08 | 富士電機株式会社 | 半導体装置 |
JP3093457B2 (ja) | 1992-07-22 | 2000-10-03 | 新日本製鐵株式会社 | 塗料供給装置 |
US5241194A (en) * | 1992-12-14 | 1993-08-31 | North Carolina State University At Raleigh | Base resistance controlled thyristor with integrated single-polarity gate control |
JP3255547B2 (ja) | 1994-03-09 | 2002-02-12 | 株式会社東芝 | 絶縁ゲート付きサイリスタ |
US5488236A (en) * | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
JP3298385B2 (ja) * | 1995-04-05 | 2002-07-02 | 富士電機株式会社 | 絶縁ゲート型サイリスタ |
JPH09181334A (ja) * | 1995-12-25 | 1997-07-11 | Fuji Electric Co Ltd | 半導体装置 |
US6351018B1 (en) * | 1999-02-26 | 2002-02-26 | Fairchild Semiconductor Corporation | Monolithically integrated trench MOSFET and Schottky diode |
JP2001284574A (ja) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | 絶縁ゲート付き半導体装置 |
DE10026925C2 (de) * | 2000-05-30 | 2002-04-18 | Infineon Technologies Ag | Feldeffektgesteuertes, vertikales Halbleiterbauelement |
KR100485556B1 (ko) * | 2001-02-02 | 2005-04-27 | 미쓰비시덴키 가부시키가이샤 | 절연 게이트형 바이폴라 트랜지스터, 반도체 장치, 절연게이트형 바이폴라 트랜지스터의 제조 방법 및 반도체장치의 제조 방법 |
-
2004
- 2004-07-01 JP JP2004196095A patent/JP4867140B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-30 US US11/170,064 patent/US7276778B2/en not_active Expired - Fee Related
- 2005-06-30 DE DE102005030411A patent/DE102005030411A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US7276778B2 (en) | 2007-10-02 |
US20060006459A1 (en) | 2006-01-12 |
DE102005030411A1 (de) | 2006-02-09 |
JP2006019528A (ja) | 2006-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10157983B2 (en) | Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands | |
US9761702B2 (en) | Power MOSFET having planar channel, vertical current path, and top drain electrode | |
US9299695B2 (en) | Semiconductor device | |
JP4790908B2 (ja) | 改良された高周波スイッチング特性と降伏特性を備えたパワー半導体デバイス | |
US7531888B2 (en) | Integrated latch-up free insulated gate bipolar transistor | |
US9184248B2 (en) | Vertical power MOSFET having planar channel and its method of fabrication | |
US7276778B2 (en) | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent | |
US5105244A (en) | Gate turn-off power semiconductor component | |
US20150187877A1 (en) | Power semiconductor device | |
US6417542B2 (en) | Field effect-controlled, vertical semiconductor component | |
KR101422953B1 (ko) | 전력 반도체 소자 및 그 제조 방법 | |
CN106449741A (zh) | 一种绝缘栅双极型晶体管器件结构 | |
US20150144989A1 (en) | Power semiconductor device and method of manufacturing the same | |
WO2018034818A1 (en) | Power mosfet having planar channel, vertical current path, and top drain electrode | |
JP2021150544A (ja) | 半導体装置及び半導体回路 | |
US20230042174A1 (en) | Semiconductor device | |
CN108122962B (zh) | 一种绝缘栅双极型晶体管 | |
US20150171198A1 (en) | Power semiconductor device | |
US11296213B2 (en) | Reverse-conducting igbt having a reduced forward recovery voltage | |
US20150144993A1 (en) | Power semiconductor device | |
KR20150076768A (ko) | 전력 반도체 소자 | |
KR20190100990A (ko) | 필드 스탑 igbt | |
EP3223316A1 (en) | Wide bandgap power semiconductor device and method for manufacturing such a device | |
US11610987B2 (en) | NPNP layered MOS-gated trench device having lowered operating voltage | |
CN114420744A (zh) | 一种利用自偏置mos钳位的具有晶闸管结构的igbt器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070315 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070904 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20080204 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20080204 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20080205 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20091112 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20091112 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20091112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110314 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20110422 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111018 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111031 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141125 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |