DE3280349D1 - Halbleiterspeicheranlage. - Google Patents

Halbleiterspeicheranlage.

Info

Publication number
DE3280349D1
DE3280349D1 DE8282302774T DE3280349T DE3280349D1 DE 3280349 D1 DE3280349 D1 DE 3280349D1 DE 8282302774 T DE8282302774 T DE 8282302774T DE 3280349 T DE3280349 T DE 3280349T DE 3280349 D1 DE3280349 D1 DE 3280349D1
Authority
DE
Germany
Prior art keywords
storage system
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8282302774T
Other languages
German (de)
English (en)
Inventor
Kiyoo Itoh
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3280349D1 publication Critical patent/DE3280349D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE8282302774T 1981-05-29 1982-05-28 Halbleiterspeicheranlage. Expired - Lifetime DE3280349D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56081042A JPS57198592A (en) 1981-05-29 1981-05-29 Semiconductor memory device

Publications (1)

Publication Number Publication Date
DE3280349D1 true DE3280349D1 (de) 1991-09-26

Family

ID=13735376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282302774T Expired - Lifetime DE3280349D1 (de) 1981-05-29 1982-05-28 Halbleiterspeicheranlage.

Country Status (5)

Country Link
US (4) US4675845A (enExample)
EP (1) EP0068645B1 (enExample)
JP (1) JPS57198592A (enExample)
CA (1) CA1199724A (enExample)
DE (1) DE3280349D1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
JPS6054471A (ja) * 1983-09-05 1985-03-28 Hitachi Ltd 半導体メモリ
JPS59231852A (ja) * 1983-06-15 1984-12-26 Hitachi Ltd 半導体装置
JPH073862B2 (ja) * 1983-07-27 1995-01-18 株式会社日立製作所 半導体記憶装置
JPS60224333A (ja) * 1984-04-23 1985-11-08 Seiko Epson Corp パラレル・シリアル変換回路
EP0166642A3 (en) * 1984-05-30 1989-02-22 Fujitsu Limited Block-divided semiconductor memory device having divided bit lines
EP0169460B1 (en) * 1984-07-26 1991-05-15 Texas Instruments Incorporated Dynamic memory array with segmented and quasi-folded bit lines
US4908797A (en) * 1984-07-26 1990-03-13 Texas Instruments Incorporated Dynamic memory array with quasi-folded bit lines
EP0180054A3 (en) * 1984-10-31 1988-05-11 Texas Instruments Incorporated Dual ended adaptive folded bitline scheme
JPS61110459A (ja) * 1984-11-02 1986-05-28 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ
US4730280A (en) * 1984-11-20 1988-03-08 Fujitsu Limited Semiconductor memory device having sense amplifiers with different driving abilities
EP0523759B1 (en) * 1985-01-22 1998-05-20 Texas Instruments Incorporated Serial accessed semiconductor memory
JPS61227289A (ja) * 1985-03-30 1986-10-09 Fujitsu Ltd 半導体記憶装置
JPS6299989A (ja) * 1985-10-25 1987-05-09 Hitachi Ltd 半導体メモリ
JPS62169471A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
JPH073856B2 (ja) * 1986-02-18 1995-01-18 日本電気株式会社 半導体記憶装置
JPS62153700U (enExample) * 1986-03-20 1987-09-29
US4907201A (en) * 1986-05-07 1990-03-06 Mitsubishi Denki Kabushiki Kaisha MOS transistor circuit
JPH0625015Y2 (ja) * 1986-06-13 1994-06-29 シャープ株式会社 半導体装置
JPS63153792A (ja) * 1986-12-17 1988-06-27 Sharp Corp 半導体メモリ装置
JPS63183691A (ja) * 1987-01-26 1988-07-29 Mitsubishi Electric Corp 半導体記憶装置
JPH0740431B2 (ja) * 1987-01-30 1995-05-01 三菱電機株式会社 半導体記憶装置
JPS63225991A (ja) * 1987-03-16 1988-09-20 Hitachi Ltd 半導体記憶装置
US4797858A (en) * 1987-03-30 1989-01-10 Motorola, Inc. Semiconductor memory with divided word lines and shared sense amplifiers
US5249159A (en) * 1987-05-27 1993-09-28 Hitachi, Ltd. Semiconductor memory
US5204842A (en) * 1987-08-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory with memory unit comprising a plurality of memory blocks
US5018101A (en) * 1987-09-16 1991-05-21 Hitachi, Ltd. Semiconductor memory
US4956811A (en) * 1987-09-16 1990-09-11 Hitachi, Ltd. Semiconductor memory
JP2618938B2 (ja) * 1987-11-25 1997-06-11 株式会社東芝 半導体記憶装置
JPH01184787A (ja) * 1988-01-19 1989-07-24 Toshiba Corp 半導体メモリ
JP2547615B2 (ja) * 1988-06-16 1996-10-23 三菱電機株式会社 読出専用半導体記憶装置および半導体記憶装置
JP2633645B2 (ja) * 1988-09-13 1997-07-23 株式会社東芝 半導体メモリ装置
US5617365A (en) 1988-10-07 1997-04-01 Hitachi, Ltd. Semiconductor device having redundancy circuit
US4969123A (en) * 1988-10-31 1990-11-06 Texas Instruments Incorporated Distributed signal transmission to an integrated circuit array
DE3937068C2 (de) * 1988-11-07 1994-10-06 Toshiba Kawasaki Kk Dynamische Halbleiterspeicheranordnung
JPH07101554B2 (ja) * 1988-11-29 1995-11-01 三菱電機株式会社 半導体記憶装置およびそのデータ転送方法
JPH02156497A (ja) * 1988-12-07 1990-06-15 Mitsubishi Electric Corp 半導体記憶装置
JP2761515B2 (ja) * 1989-03-08 1998-06-04 株式会社日立製作所 半導体記憶装置
JPH0814985B2 (ja) * 1989-06-06 1996-02-14 富士通株式会社 半導体記憶装置
JP2953708B2 (ja) * 1989-07-31 1999-09-27 株式会社東芝 ダイナミック型半導体記憶装置
EP0450159A3 (en) * 1990-03-28 1992-06-03 Siemens Aktiengesellschaft Dram cell field architecture with superposed bitline switches and bitlines
GB2246001B (en) * 1990-04-11 1994-06-15 Digital Equipment Corp Array architecture for high speed cache memory
JP2982920B2 (ja) * 1990-07-10 1999-11-29 三菱電機株式会社 半導体記憶装置
JP2624569B2 (ja) * 1990-10-22 1997-06-25 シャープ株式会社 読出し専用メモリ
JP2664810B2 (ja) * 1991-03-07 1997-10-22 株式会社東芝 メモリセルアレイ分割型半導体記憶装置
JP3226579B2 (ja) * 1991-12-24 2001-11-05 沖電気工業株式会社 半導体記憶装置
JP2775552B2 (ja) * 1991-12-26 1998-07-16 三菱電機株式会社 半導体記憶装置
KR950009234B1 (ko) * 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
US5475642A (en) * 1992-06-23 1995-12-12 Taylor; David L. Dynamic random access memory with bit line preamp/driver
KR970004460B1 (ko) * 1992-06-30 1997-03-27 니뽄 덴끼 가부시끼가이샤 반도체 메모리 회로
JP3279681B2 (ja) * 1992-09-03 2002-04-30 株式会社日立製作所 半導体装置
US5325336A (en) * 1992-09-10 1994-06-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having power line arranged in a meshed shape
JP3364810B2 (ja) * 1993-09-14 2003-01-08 三菱電機株式会社 半導体記憶装置
JPH07272480A (ja) * 1994-03-30 1995-10-20 Mitsubishi Electric Corp 半導体記憶装置
JP3413298B2 (ja) * 1994-12-02 2003-06-03 三菱電機株式会社 半導体記憶装置
US5719890A (en) * 1995-06-01 1998-02-17 Micron Technology, Inc. Method and circuit for transferring data with dynamic parity generation and checking scheme in multi-port DRAM
US5561630A (en) * 1995-09-28 1996-10-01 International Business Machines Coporation Data sense circuit for dynamic random access memories
JP2879772B2 (ja) * 1996-04-25 1999-04-05 三菱電機株式会社 半導体記憶装置
US6487207B1 (en) 1997-02-26 2002-11-26 Micron Technology, Inc. Shared buffer memory architecture for asynchronous transfer mode switching and multiplexing technology
US5892703A (en) * 1997-06-13 1999-04-06 Micron Technology, Inc, Memory architecture and decoder addressing
JP3703655B2 (ja) * 1999-08-11 2005-10-05 株式会社東芝 タイミング信号発生回路
US6563743B2 (en) * 2000-11-27 2003-05-13 Hitachi, Ltd. Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy
KR100769796B1 (ko) * 2006-05-12 2007-10-25 주식회사 하이닉스반도체 저전압용 롬

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US3789371A (en) * 1972-11-20 1974-01-29 Lockheed Electronics Co Mosfet memory cell
US3848237A (en) * 1973-02-20 1974-11-12 Advanced Memory Syst High speed mos random access read/write memory device
US3942164A (en) * 1975-01-30 1976-03-02 Semi, Inc. Sense line coupling reduction system
JPS596067B2 (ja) * 1975-03-14 1984-02-08 株式会社日立製作所 半導体メモリ
JPS596069B2 (ja) * 1975-12-10 1984-02-08 株式会社日立製作所 ハンドウタイメモリ
US4056811A (en) * 1976-02-13 1977-11-01 Baker Roger T Circuit for the improvement of semiconductor memories
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
DE2740113A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierter halbleiterspeicher
JPS6044750B2 (ja) * 1978-01-24 1985-10-05 日本電気株式会社 集積化メモリ
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
JPS5575899U (enExample) * 1978-11-20 1980-05-24
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
JPS5693178A (en) * 1979-12-26 1981-07-28 Toshiba Corp Semiconductor memory device
JPS57100689A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd Semiconductor storage device
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
US4408305A (en) * 1981-09-28 1983-10-04 Motorola, Inc. Memory with permanent array division capability
EP0101884A3 (en) * 1982-07-21 1987-09-02 Hitachi, Ltd. Monolithic semiconductor memory
US4808305A (en) * 1986-10-09 1989-02-28 Arnold James D Apparatus for sludge pond treatment

Also Published As

Publication number Publication date
CA1199724A (en) 1986-01-21
JPS57198592A (en) 1982-12-06
US4825418A (en) 1989-04-25
US4675845A (en) 1987-06-23
JPH0243279B2 (enExample) 1990-09-27
EP0068645A3 (en) 1985-01-09
EP0068645A2 (en) 1983-01-05
EP0068645B1 (en) 1991-08-21
US4748591A (en) 1988-05-31
US4992986A (en) 1991-02-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition