DE102007039624A1 - Halbleitervorrichtung mit Schaltelement und zwei Dioden - Google Patents

Halbleitervorrichtung mit Schaltelement und zwei Dioden Download PDF

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Publication number
DE102007039624A1
DE102007039624A1 DE200710039624 DE102007039624A DE102007039624A1 DE 102007039624 A1 DE102007039624 A1 DE 102007039624A1 DE 200710039624 DE200710039624 DE 200710039624 DE 102007039624 A DE102007039624 A DE 102007039624A DE 102007039624 A1 DE102007039624 A1 DE 102007039624A1
Authority
DE
Germany
Prior art keywords
semiconductor device
diode
region
type impurity
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE200710039624
Other languages
German (de)
English (en)
Inventor
Yoshihiko Hirota
Chihiro Tadokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102007039624A1 publication Critical patent/DE102007039624A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE200710039624 2007-01-29 2007-08-22 Halbleitervorrichtung mit Schaltelement und zwei Dioden Withdrawn DE102007039624A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007017913A JP5196794B2 (ja) 2007-01-29 2007-01-29 半導体装置
JP2007-017913 2007-01-29

Publications (1)

Publication Number Publication Date
DE102007039624A1 true DE102007039624A1 (de) 2008-08-07

Family

ID=39587449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200710039624 Withdrawn DE102007039624A1 (de) 2007-01-29 2007-08-22 Halbleitervorrichtung mit Schaltelement und zwei Dioden

Country Status (5)

Country Link
US (1) US7755167B2 (https=)
JP (1) JP5196794B2 (https=)
KR (1) KR100941105B1 (https=)
CN (1) CN101236964B (https=)
DE (1) DE102007039624A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539134B2 (ja) * 2010-09-16 2014-07-02 三菱電機株式会社 半導体装置
KR101301387B1 (ko) 2011-09-16 2013-08-28 삼성전기주식회사 전력 반도체 모듈
CN106067799B (zh) * 2016-06-13 2019-03-05 南京芯舟科技有限公司 一种半导体器件
JP2019161495A (ja) * 2018-03-14 2019-09-19 富士電機株式会社 半導体装置および装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210858A (ja) 1986-03-10 1987-09-16 Mitsubishi Electric Corp 複合ダイオ−ド

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Publication number Priority date Publication date Assignee Title
JPS5548958A (en) * 1978-10-02 1980-04-08 Nec Corp Semiconductor device
JPS6269564A (ja) * 1985-09-20 1987-03-30 Nec Corp 半導体装置
JPS62108578A (ja) * 1985-11-06 1987-05-19 Rohm Co Ltd 半導体装置
DE3856174T2 (de) * 1987-10-27 1998-09-03 Nippon Electric Co Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.
JP3032745B2 (ja) * 1992-09-04 2000-04-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
JPH09181335A (ja) * 1995-12-25 1997-07-11 Rohm Co Ltd 半導体装置
FR2773265B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
JP2001111398A (ja) * 1999-10-13 2001-04-20 Fuji Electric Co Ltd 半導体双方向スイッチ用スパイク電圧抑制回路
JP2002142443A (ja) * 2000-11-01 2002-05-17 Fuji Electric Co Ltd 電力用半導体素子駆動用ｉｃの保護回路
JP4761644B2 (ja) 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
US6657256B2 (en) 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
JP2003033044A (ja) 2001-07-09 2003-01-31 Mitsubishi Electric Corp スナバ回路
JP4511784B2 (ja) * 2001-12-20 2010-07-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｌｅｄアレイ及びｌｅｄモジュール
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
DE10334079B4 (de) 2003-07-25 2008-08-21 Siemens Ag Transistormodul
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4506276B2 (ja) 2004-05-17 2010-07-21 富士電機システムズ株式会社 自己消弧形半導体素子の駆動回路
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor
JP5034461B2 (ja) * 2006-01-10 2012-09-26 株式会社デンソー 半導体装置
JP5033335B2 (ja) * 2006-02-21 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いたインバータ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210858A (ja) 1986-03-10 1987-09-16 Mitsubishi Electric Corp 複合ダイオ−ド

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Current-Source Inverter for Induction Heating Using IGBT", Denko Giho, Nr. 28, 1994, S. 54-59
K. Nishida u. a., "Novel current control scheme with deadbeat algorithm and adaptive line enhancer for three-phase current-source active power filter", IEEE Industry Applications Conference, 36th Annual Meeting, 2001

Also Published As

Publication number Publication date
CN101236964A (zh) 2008-08-06
KR100941105B1 (ko) 2010-02-10
KR20080071054A (ko) 2008-08-01
CN101236964B (zh) 2011-04-27
US7755167B2 (en) 2010-07-13
JP5196794B2 (ja) 2013-05-15
US20080179704A1 (en) 2008-07-31
JP2008186920A (ja) 2008-08-14

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R120 Application withdrawn or ip right abandoned

Effective date: 20131202