JP5196794B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5196794B2
JP5196794B2 JP2007017913A JP2007017913A JP5196794B2 JP 5196794 B2 JP5196794 B2 JP 5196794B2 JP 2007017913 A JP2007017913 A JP 2007017913A JP 2007017913 A JP2007017913 A JP 2007017913A JP 5196794 B2 JP5196794 B2 JP 5196794B2
Authority
JP
Japan
Prior art keywords
diode
region
cathode
anode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007017913A
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English (en)
Japanese (ja)
Other versions
JP2008186920A (ja
JP2008186920A5 (https=
Inventor
慶彦 広田
千広 田所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2007017913A priority Critical patent/JP5196794B2/ja
Priority to US11/776,913 priority patent/US7755167B2/en
Priority to DE200710039624 priority patent/DE102007039624A1/de
Priority to KR1020070096321A priority patent/KR100941105B1/ko
Priority to CN2007101629044A priority patent/CN101236964B/zh
Publication of JP2008186920A publication Critical patent/JP2008186920A/ja
Publication of JP2008186920A5 publication Critical patent/JP2008186920A5/ja
Application granted granted Critical
Publication of JP5196794B2 publication Critical patent/JP5196794B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2007017913A 2007-01-29 2007-01-29 半導体装置 Expired - Fee Related JP5196794B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007017913A JP5196794B2 (ja) 2007-01-29 2007-01-29 半導体装置
US11/776,913 US7755167B2 (en) 2007-01-29 2007-07-12 Semiconductor device including switching element and two diodes
DE200710039624 DE102007039624A1 (de) 2007-01-29 2007-08-22 Halbleitervorrichtung mit Schaltelement und zwei Dioden
KR1020070096321A KR100941105B1 (ko) 2007-01-29 2007-09-21 스위칭 소자와 2개의 다이오드를 구비한 반도체 장치
CN2007101629044A CN101236964B (zh) 2007-01-29 2007-09-27 具有开关元件和两个二极管的半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007017913A JP5196794B2 (ja) 2007-01-29 2007-01-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2008186920A JP2008186920A (ja) 2008-08-14
JP2008186920A5 JP2008186920A5 (https=) 2009-07-30
JP5196794B2 true JP5196794B2 (ja) 2013-05-15

Family

ID=39587449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007017913A Expired - Fee Related JP5196794B2 (ja) 2007-01-29 2007-01-29 半導体装置

Country Status (5)

Country Link
US (1) US7755167B2 (https=)
JP (1) JP5196794B2 (https=)
KR (1) KR100941105B1 (https=)
CN (1) CN101236964B (https=)
DE (1) DE102007039624A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539134B2 (ja) * 2010-09-16 2014-07-02 三菱電機株式会社 半導体装置
KR101301387B1 (ko) 2011-09-16 2013-08-28 삼성전기주식회사 전력 반도체 모듈
CN106067799B (zh) * 2016-06-13 2019-03-05 南京芯舟科技有限公司 一种半导体器件
JP2019161495A (ja) * 2018-03-14 2019-09-19 富士電機株式会社 半導体装置および装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548958A (en) * 1978-10-02 1980-04-08 Nec Corp Semiconductor device
JPS6269564A (ja) * 1985-09-20 1987-03-30 Nec Corp 半導体装置
JPS62108578A (ja) * 1985-11-06 1987-05-19 Rohm Co Ltd 半導体装置
JPS62210858A (ja) 1986-03-10 1987-09-16 Mitsubishi Electric Corp 複合ダイオ−ド
DE3856174T2 (de) * 1987-10-27 1998-09-03 Nippon Electric Co Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.
JP3032745B2 (ja) * 1992-09-04 2000-04-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
JPH09181335A (ja) * 1995-12-25 1997-07-11 Rohm Co Ltd 半導体装置
FR2773265B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
JP2001111398A (ja) * 1999-10-13 2001-04-20 Fuji Electric Co Ltd 半導体双方向スイッチ用スパイク電圧抑制回路
JP2002142443A (ja) * 2000-11-01 2002-05-17 Fuji Electric Co Ltd 電力用半導体素子駆動用ｉｃの保護回路
JP4761644B2 (ja) 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
US6657256B2 (en) 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
JP2003033044A (ja) 2001-07-09 2003-01-31 Mitsubishi Electric Corp スナバ回路
JP4511784B2 (ja) * 2001-12-20 2010-07-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｌｅｄアレイ及びｌｅｄモジュール
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
DE10334079B4 (de) 2003-07-25 2008-08-21 Siemens Ag Transistormodul
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4506276B2 (ja) 2004-05-17 2010-07-21 富士電機システムズ株式会社 自己消弧形半導体素子の駆動回路
US7297603B2 (en) * 2005-03-31 2007-11-20 Semiconductor Components Industries, L.L.C. Bi-directional transistor and method therefor
JP5034461B2 (ja) * 2006-01-10 2012-09-26 株式会社デンソー 半導体装置
JP5033335B2 (ja) * 2006-02-21 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いたインバータ装置

Also Published As

Publication number Publication date
CN101236964A (zh) 2008-08-06
KR100941105B1 (ko) 2010-02-10
KR20080071054A (ko) 2008-08-01
CN101236964B (zh) 2011-04-27
US7755167B2 (en) 2010-07-13
US20080179704A1 (en) 2008-07-31
JP2008186920A (ja) 2008-08-14
DE102007039624A1 (de) 2008-08-07

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