DE10196115T1 - Verfahren zum Herstellen eines Halbleiterwafers - Google Patents
Verfahren zum Herstellen eines HalbleiterwafersInfo
- Publication number
- DE10196115T1 DE10196115T1 DE10196115T DE10196115T DE10196115T1 DE 10196115 T1 DE10196115 T1 DE 10196115T1 DE 10196115 T DE10196115 T DE 10196115T DE 10196115 T DE10196115 T DE 10196115T DE 10196115 T1 DE10196115 T1 DE 10196115T1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor wafer
- wafer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000122272A JP3494119B2 (ja) | 2000-04-24 | 2000-04-24 | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
JP2000/122272 | 2000-04-24 | ||
JP2000199561A JP2002025950A (ja) | 2000-06-30 | 2000-06-30 | 半導体ウェーハの製造方法 |
JP2000/199561 | 2000-06-30 | ||
JP2000255018A JP2001232561A (ja) | 1999-12-16 | 2000-08-25 | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
JP2000/255018 | 2000-08-25 | ||
PCT/JP2001/003509 WO2001082354A1 (fr) | 2000-04-24 | 2001-04-23 | Procédé de fabrication d'une plaquette de semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10196115T1 true DE10196115T1 (de) | 2003-05-08 |
DE10196115B4 DE10196115B4 (de) | 2011-06-16 |
Family
ID=27343177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10196115T Expired - Lifetime DE10196115B4 (de) | 2000-04-24 | 2001-04-23 | Verfahren zum Polieren eines Halbleiterwafers |
Country Status (6)
Country | Link |
---|---|
US (2) | US7589023B2 (de) |
KR (1) | KR100737879B1 (de) |
CN (1) | CN1203530C (de) |
DE (1) | DE10196115B4 (de) |
TW (1) | TW507281B (de) |
WO (1) | WO2001082354A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10196254B4 (de) * | 2000-05-31 | 2010-12-02 | Sumitomo Mitsubishi Silicon Corp. | Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers |
DE102009051008B4 (de) * | 2009-10-28 | 2013-05-23 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10314212B4 (de) * | 2002-03-29 | 2010-06-02 | Hoya Corp. | Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske |
KR100954534B1 (ko) * | 2002-10-09 | 2010-04-23 | 고요 기카이 고교 가부시키가이샤 | 얇은 원판형상 공작물의 양면 연삭방법 및 양면 연삭장치 |
KR100486144B1 (ko) * | 2002-12-11 | 2005-04-29 | 주식회사 실트론 | 실리콘웨이퍼의 연마 방법 |
JP4273943B2 (ja) * | 2003-12-01 | 2009-06-03 | 株式会社Sumco | シリコンウェーハの製造方法 |
US7338904B2 (en) * | 2003-12-05 | 2008-03-04 | Sumco Corporation | Method for manufacturing single-side mirror surface wafer |
JP4854936B2 (ja) * | 2004-06-15 | 2012-01-18 | 信越半導体株式会社 | シリコンウエーハの製造方法及びシリコンウエーハ |
US7829152B2 (en) * | 2006-10-05 | 2010-11-09 | Lam Research Corporation | Electroless plating method and apparatus |
JP2006100799A (ja) | 2004-09-06 | 2006-04-13 | Sumco Corp | シリコンウェーハの製造方法 |
JP4448766B2 (ja) * | 2004-12-08 | 2010-04-14 | 信越化学工業株式会社 | 研磨方法 |
JP4727218B2 (ja) * | 2004-12-10 | 2011-07-20 | 株式会社住友金属ファインテック | 両面研磨用キャリア |
US20070148917A1 (en) * | 2005-12-22 | 2007-06-28 | Sumco Corporation | Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer |
KR100744099B1 (ko) * | 2006-04-12 | 2007-08-01 | 조선대학교산학협력단 | 씨엠피장비의 슬러리 공급 노즐 |
KR100897387B1 (ko) * | 2007-07-27 | 2009-05-14 | 정천섭 | 회전판의 편심회전장치 |
JP5301802B2 (ja) * | 2007-09-25 | 2013-09-25 | Sumco Techxiv株式会社 | 半導体ウェハの製造方法 |
US8596946B2 (en) * | 2008-01-28 | 2013-12-03 | The Richard C. Lydle 2008 Delaware Trust | Watercraft dry dock storage systems and methods |
JP2009302338A (ja) * | 2008-06-13 | 2009-12-24 | Sumco Corp | ウェーハの研磨方法および該方法により製造されるウェーハ |
JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
JP2009302410A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
JP5600867B2 (ja) * | 2008-06-16 | 2014-10-08 | 株式会社Sumco | 半導体ウェーハの製造方法 |
DE102009015878A1 (de) * | 2009-04-01 | 2010-10-07 | Peter Wolters Gmbh | Verfahren zum materialabtragenden Bearbeiten von flachen Werkstücken |
JP5381304B2 (ja) | 2009-05-08 | 2014-01-08 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
DE102009025243B4 (de) * | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
DE102009025242B4 (de) * | 2009-06-17 | 2013-05-23 | Siltronic Ag | Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe |
JP2011029355A (ja) * | 2009-07-24 | 2011-02-10 | Sumco Corp | レーザマーク付き半導体ウェーハの製造方法 |
WO2011083667A1 (ja) * | 2010-01-05 | 2011-07-14 | 住友電気工業株式会社 | 化合物半導体ウェハの加工方法及び加工装置 |
DE102010013519B4 (de) * | 2010-03-31 | 2012-12-27 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
DE102010013520B4 (de) * | 2010-03-31 | 2013-02-07 | Siltronic Ag | Verfahren zur beidseitigen Politur einer Halbleiterscheibe |
DE102010014874A1 (de) * | 2010-04-14 | 2011-10-20 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010026352A1 (de) | 2010-05-05 | 2011-11-10 | Siltronic Ag | Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung einer Halbleiterscheibe |
DE102010042040A1 (de) * | 2010-10-06 | 2012-04-12 | Siltronic Ag | Verfahren zum Schleifen einer Halbleiterscheibe |
CN102034720B (zh) * | 2010-11-05 | 2013-05-15 | 南通富士通微电子股份有限公司 | 芯片封装方法 |
CN102034721B (zh) | 2010-11-05 | 2013-07-10 | 南通富士通微电子股份有限公司 | 芯片封装方法 |
DE102011003008B4 (de) * | 2011-01-21 | 2018-07-12 | Siltronic Ag | Führungskäfig und Verfahren zur gleichzeitig beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben |
JP5479390B2 (ja) | 2011-03-07 | 2014-04-23 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
JP5789869B2 (ja) * | 2011-07-28 | 2015-10-07 | 東邦エンジニアリング株式会社 | 研磨パッド用補助板および研磨パッド用補助板を備えた研磨装置 |
DE102011082857B4 (de) * | 2011-09-16 | 2020-02-20 | Siltronic Ag | Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung wenigstens dreier Werkstücke |
US8986071B2 (en) | 2011-12-06 | 2015-03-24 | White Drive Products, Inc. | Parts carrier assembly for grinding machine |
US9427841B2 (en) * | 2013-03-15 | 2016-08-30 | Ii-Vi Incorporated | Double-sided polishing of hard substrate materials |
CN103624665B (zh) * | 2013-11-26 | 2018-05-01 | 浙江汇锋塑胶科技有限公司 | 一种蓝宝石触摸面板的两面抛光方法 |
JP6015683B2 (ja) * | 2014-01-29 | 2016-10-26 | 信越半導体株式会社 | ワークの加工装置およびワークの加工方法 |
CN103847032B (zh) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
CN104015122A (zh) * | 2014-06-18 | 2014-09-03 | 蓝思科技股份有限公司 | 一种蓝宝石面板的双面铜盘研磨工艺 |
KR101660900B1 (ko) * | 2015-01-16 | 2016-10-10 | 주식회사 엘지실트론 | 웨이퍼 연마 장치 및 이를 이용한 웨이퍼 연마 방법 |
JP6421640B2 (ja) * | 2015-02-25 | 2018-11-14 | 株式会社Sumco | 半導体ウェーハの枚葉式片面研磨方法および半導体ウェーハの枚葉式片面研磨装置 |
KR101759875B1 (ko) * | 2015-06-24 | 2017-07-20 | 주식회사 엘지실트론 | 웨이퍼 연마장치의 스캔장치 및 스캔시스템 |
JP6424809B2 (ja) * | 2015-12-11 | 2018-11-21 | 信越半導体株式会社 | ウェーハの両面研磨方法 |
KR102577033B1 (ko) * | 2016-02-16 | 2023-09-12 | 신에쯔 한도타이 가부시키가이샤 | 양면연마방법 및 양면연마장치 |
JP6974116B2 (ja) * | 2017-10-27 | 2021-12-01 | 株式会社荏原製作所 | 基板保持装置並びに基板保持装置を備えた基板処理装置および基板処理方法 |
CN107717715A (zh) * | 2017-11-16 | 2018-02-23 | 无锡佳力欣精密机械有限公司 | 一种铜基止推轴承表面划痕处理工艺与装置 |
CN107993936A (zh) * | 2017-11-30 | 2018-05-04 | 北京创昱科技有限公司 | 衬底加工方法 |
CN113894635B (zh) * | 2021-11-03 | 2022-06-21 | 安徽格楠机械有限公司 | 基于自学习的智能硅基晶圆超精密研磨抛光机 |
CN117140304B (zh) * | 2023-10-30 | 2024-01-09 | 新乡市至德精密设备有限公司 | 一种便于更换磨盘的双面研磨机 |
CN117798802B (zh) * | 2024-03-01 | 2024-05-14 | 苏州中航天成电子科技有限公司 | 一种金属封装外壳用抛光设备 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54122087A (en) | 1978-03-16 | 1979-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Simultaneous working method for both surfaces of wafer |
JPS5612734A (en) * | 1979-07-10 | 1981-02-07 | Nec Corp | Wafer polishing method |
JPS60197367A (ja) | 1984-03-19 | 1985-10-05 | Toshiba Ceramics Co Ltd | 鏡面ウエハの製造方法 |
JPH0725024B2 (ja) | 1987-11-11 | 1995-03-22 | 長岡精機株式会社 | ラップ盤 |
JPH029571A (ja) | 1988-06-28 | 1990-01-12 | Fujitsu Ltd | 両面研磨方法 |
DE3929484A1 (de) * | 1989-09-05 | 1991-03-14 | Wacker Chemitronic | Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben |
JPH03188630A (ja) * | 1989-12-18 | 1991-08-16 | Sony Corp | 半導体基板の製法 |
JP2866175B2 (ja) | 1990-09-14 | 1999-03-08 | 昭和アルミニウム株式会社 | ワークの両面等厚研磨加工法 |
US5514245A (en) * | 1992-01-27 | 1996-05-07 | Micron Technology, Inc. | Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches |
JPH06275525A (ja) | 1993-03-18 | 1994-09-30 | Shin Etsu Handotai Co Ltd | Soi基板及びその製造方法 |
JP2839822B2 (ja) | 1993-08-02 | 1998-12-16 | 三菱マテリアルシリコン株式会社 | 高平坦度ウェーハの製造方法 |
JPH0911112A (ja) | 1995-06-30 | 1997-01-14 | Komatsu Electron Metals Co Ltd | 半導体ウェハの研磨方法 |
JP3169120B2 (ja) * | 1995-07-21 | 2001-05-21 | 信越半導体株式会社 | 半導体鏡面ウェーハの製造方法 |
US5643405A (en) | 1995-07-31 | 1997-07-01 | Motorola, Inc. | Method for polishing a semiconductor substrate |
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
JPH09252100A (ja) * | 1996-03-18 | 1997-09-22 | Shin Etsu Handotai Co Ltd | 結合ウェーハの製造方法及びこの方法により製造される結合ウェーハ |
JPH10135164A (ja) | 1996-10-29 | 1998-05-22 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
JPH10135165A (ja) * | 1996-10-29 | 1998-05-22 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製法 |
JPH10202511A (ja) | 1997-01-21 | 1998-08-04 | Fujikoshi Mach Corp | 両面研磨装置 |
DE19704546A1 (de) | 1997-02-06 | 1998-08-13 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe |
JPH11156699A (ja) * | 1997-11-25 | 1999-06-15 | Speedfam Co Ltd | 平面研磨用パッド |
JPH11233462A (ja) * | 1998-02-09 | 1999-08-27 | Naoetsu Electronics Co Ltd | 半導体ウエハの両面研磨方法 |
JPH11254302A (ja) | 1998-03-06 | 1999-09-21 | Fujikoshi Mach Corp | 両面研磨装置 |
JPH11254308A (ja) * | 1998-03-06 | 1999-09-21 | Fujikoshi Mach Corp | 両面研磨装置 |
US5897426A (en) * | 1998-04-24 | 1999-04-27 | Applied Materials, Inc. | Chemical mechanical polishing with multiple polishing pads |
JP4308344B2 (ja) | 1998-07-24 | 2009-08-05 | 不二越機械工業株式会社 | 両面研磨装置 |
TW416104B (en) * | 1998-08-28 | 2000-12-21 | Kobe Steel Ltd | Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate |
JP3528166B2 (ja) | 1998-09-10 | 2004-05-17 | 三菱住友シリコン株式会社 | 高平坦度ウェーハの製造方法 |
JP2000094307A (ja) * | 1998-09-18 | 2000-04-04 | Ebara Corp | ポリッシング装置 |
JP3329288B2 (ja) * | 1998-11-26 | 2002-09-30 | 信越半導体株式会社 | 半導体ウエーハおよびその製造方法 |
JP2000216119A (ja) | 1999-01-26 | 2000-08-04 | Mitsubishi Materials Silicon Corp | 高平坦度ウェ―ハの加工方法 |
JP2000260738A (ja) * | 1999-03-10 | 2000-09-22 | Hitachi Ltd | 半導体基板の研削加工方法ならびに半導体装置および半導体装置の製造方法 |
DE60025989T2 (de) * | 1999-04-09 | 2006-11-09 | Tosoh Corp., Shinnanyo | Formschleifprodukt und Benutzung in einer Polierscheibe |
US6432823B1 (en) * | 1999-11-04 | 2002-08-13 | International Business Machines Corporation | Off-concentric polishing system design |
US20010039101A1 (en) * | 2000-04-13 | 2001-11-08 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Method for converting a reclaim wafer into a semiconductor wafer |
US6709981B2 (en) * | 2000-08-16 | 2004-03-23 | Memc Electronic Materials, Inc. | Method and apparatus for processing a semiconductor wafer using novel final polishing method |
-
2001
- 2001-04-23 DE DE10196115T patent/DE10196115B4/de not_active Expired - Lifetime
- 2001-04-23 CN CNB018116191A patent/CN1203530C/zh not_active Expired - Lifetime
- 2001-04-23 KR KR1020027014291A patent/KR100737879B1/ko active IP Right Grant
- 2001-04-23 US US10/258,282 patent/US7589023B2/en active Active
- 2001-04-23 WO PCT/JP2001/003509 patent/WO2001082354A1/ja active Application Filing
- 2001-04-24 TW TW090109724A patent/TW507281B/zh not_active IP Right Cessation
-
2009
- 2009-09-14 US US12/585,400 patent/US8283252B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10196254B4 (de) * | 2000-05-31 | 2010-12-02 | Sumitomo Mitsubishi Silicon Corp. | Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers |
DE102009051008B4 (de) * | 2009-10-28 | 2013-05-23 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
US8685270B2 (en) | 2009-10-28 | 2014-04-01 | Siltronic Ag | Method for producing a semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
WO2001082354A1 (fr) | 2001-11-01 |
KR20030003263A (ko) | 2003-01-09 |
DE10196115B4 (de) | 2011-06-16 |
KR100737879B1 (ko) | 2007-07-10 |
US20100009605A1 (en) | 2010-01-14 |
US7589023B2 (en) | 2009-09-15 |
US8283252B2 (en) | 2012-10-09 |
TW507281B (en) | 2002-10-21 |
CN1437762A (zh) | 2003-08-20 |
US20030104698A1 (en) | 2003-06-05 |
CN1203530C (zh) | 2005-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE10196115T1 (de) | Verfahren zum Herstellen eines Halbleiterwafers | |
DE60239809D1 (de) | Gerät und verfahren zum herstellen einer halbleitervorrichtung und verfahren zum reinigen eines halbleiterherstellungsgerätes | |
DE69619602T2 (de) | Verfahren zum Herstellen eines Halbleiter-Substrats | |
DE60045636D1 (de) | Verfahren zur behandlung eines halbleitersubstrats | |
DE60238583D1 (de) | Herstellungsverfahren eines Halbleiterbauelements | |
DE60142377D1 (de) | Verfahren zum Trockenätzen für Halbleiteranordnung | |
DE50209782D1 (de) | Verfahren zum herstellen einer selbstjustierten struktur auf einem halbleiter-wafer | |
DE10194791T1 (de) | Verfahren zum Bilden von Halbleiterstrukturen | |
DE60039054D1 (de) | Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23) | |
DE50313644D1 (de) | Verfahren zum herstellen einer kondensatoranordnung und kondensatoranordnung | |
DE60132748D1 (de) | Herstellungsverfahren für ein Halbleiterbauelement unter Benutzung eines Dummy-Gates | |
DE60040723D1 (de) | Verfahren und Gerät zum Steuern eines Halbleiterelements | |
DE60226286D1 (de) | Verfahren zum Herstellen eines Hakenbestandteils | |
DE60122131D1 (de) | Verfahren zum verkleben eines fügeteils | |
DE59912777D1 (de) | Verfahren zum herstellen eines thermoelektrischen wandlers | |
DE60123532D1 (de) | Scheibenkerbungs-Poliermaschine und Verfahren zum Polieren einer Orientierungskerbung einer Halbleiterscheibe | |
ATE308575T1 (de) | Verfahren zum herstellen eines elastomeren | |
DE50211139D1 (de) | Verfahren zum rückseitenschleifen von wafern | |
DE60045302D1 (de) | Verfahren zur Dotierung eines Halbleiterkörpers | |
DE60143761D1 (de) | Herstellungsverfahren für einen siliziumwafer | |
DE502004006867D1 (de) | Integrierter halbleiterspeicher und verfahren zum herstellen eines integrierten halbleiterspeichers | |
DE50113179D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE602004031832D1 (de) | Verfahren zum herstellen eines siliziumoxidfilms u | |
DE60037188D1 (de) | Verfahren zum Betreiben eines Suszeptors für Halbleiterscheiben | |
DE60219540D1 (de) | Verfahren und Vorrichtung zum Planarisieren einer Halbleiterscheibe |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8128 | New person/name/address of the agent |
Representative=s name: HOESSLE PATENTANWAELTE PARTNERSCHAFT, 70173 STUTTG |
|
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |
Effective date: 20110917 |
|
R082 | Change of representative |
Representative=s name: GLAWE DELFS MOLL PARTNERSCHAFT MBB VON PATENT-, DE Representative=s name: RAIBLE, DEISSLER, LEHMANN PATENTANWAELTE PARTG, DE |
|
R082 | Change of representative |
Representative=s name: RAIBLE, DEISSLER, LEHMANN PATENTANWAELTE PARTG, DE |
|
R071 | Expiry of right |