DE60045302D1 - Verfahren zur Dotierung eines Halbleiterkörpers - Google Patents
Verfahren zur Dotierung eines HalbleiterkörpersInfo
- Publication number
- DE60045302D1 DE60045302D1 DE60045302T DE60045302T DE60045302D1 DE 60045302 D1 DE60045302 D1 DE 60045302D1 DE 60045302 T DE60045302 T DE 60045302T DE 60045302 T DE60045302 T DE 60045302T DE 60045302 D1 DE60045302 D1 DE 60045302D1
- Authority
- DE
- Germany
- Prior art keywords
- doping
- semiconductor body
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/473,576 US6586318B1 (en) | 1999-12-28 | 1999-12-28 | Thin phosphorus nitride film as an N-type doping source used in laser doping technology |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60045302D1 true DE60045302D1 (de) | 2011-01-13 |
Family
ID=23880132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60045302T Expired - Lifetime DE60045302D1 (de) | 1999-12-28 | 2000-12-13 | Verfahren zur Dotierung eines Halbleiterkörpers |
Country Status (4)
Country | Link |
---|---|
US (2) | US6586318B1 (de) |
EP (1) | EP1113486B1 (de) |
JP (1) | JP2001223174A (de) |
DE (1) | DE60045302D1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6586318B1 (en) * | 1999-12-28 | 2003-07-01 | Xerox Corporation | Thin phosphorus nitride film as an N-type doping source used in laser doping technology |
US7442629B2 (en) * | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
JP4387091B2 (ja) * | 2002-11-05 | 2009-12-16 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
TWI280667B (en) * | 2006-04-11 | 2007-05-01 | Au Optronics Corp | A manufacturing method for a liquid crystal display |
US7501648B2 (en) * | 2006-08-16 | 2009-03-10 | International Business Machines Corporation | Phase change materials and associated memory devices |
JP4625793B2 (ja) * | 2006-09-08 | 2011-02-02 | 株式会社東芝 | 半導体デバイス |
TWI508142B (zh) * | 2006-12-18 | 2015-11-11 | Applied Materials Inc | 低能量、高劑量砷、磷與硼植入晶圓的安全處理 |
KR101329352B1 (ko) * | 2007-10-17 | 2013-11-13 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US7989329B2 (en) * | 2007-12-21 | 2011-08-02 | Applied Materials, Inc. | Removal of surface dopants from a substrate |
US8207051B2 (en) * | 2009-04-28 | 2012-06-26 | Sionyx, Inc. | Semiconductor surface modification |
US7799666B1 (en) | 2009-07-27 | 2010-09-21 | Potomac Photonics, Inc. | Method of spatially selective laser-assisted doping of a semiconductor |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
EP2583312A2 (de) | 2010-06-18 | 2013-04-24 | Sionyx, Inc. | Lichtempfindliche hochgeschwindigkeitsvorrichtungen und verfahren dafür |
US8569158B2 (en) * | 2011-03-31 | 2013-10-29 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
US8580664B2 (en) | 2011-03-31 | 2013-11-12 | Tokyo Electron Limited | Method for forming ultra-shallow boron doping regions by solid phase diffusion |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2014525091A (ja) | 2011-07-13 | 2014-09-25 | サイオニクス、インク. | 生体撮像装置および関連方法 |
JP6239227B2 (ja) * | 2011-11-30 | 2017-11-29 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
TWI476933B (zh) * | 2012-03-27 | 2015-03-11 | Hon Hai Prec Ind Co Ltd | 薄膜電晶體 |
JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジcmos画像センサおよび関連づけられた方法 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
US9899224B2 (en) | 2015-03-03 | 2018-02-20 | Tokyo Electron Limited | Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regions |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4415526A (en) * | 1977-05-31 | 1983-11-15 | Metco Properties | Metal phthalocyanine on a substrate |
US4276557A (en) * | 1978-12-29 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor circuit structure and method for making it |
US4737429A (en) * | 1986-06-26 | 1988-04-12 | Xerox Corporation | Layered amorphous silicon imaging members |
JP2819694B2 (ja) * | 1989-11-17 | 1998-10-30 | 富士ゼロックス株式会社 | Mos型半導体装置の製造方法 |
JPH04269832A (ja) * | 1991-02-26 | 1992-09-25 | Shin Etsu Chem Co Ltd | X線リソグラフィ−用マスクの製造方法 |
JPH07135308A (ja) * | 1993-11-10 | 1995-05-23 | Fujitsu Ltd | 半導体装置の製造方法 |
US5871826A (en) * | 1996-05-30 | 1999-02-16 | Xerox Corporation | Proximity laser doping technique for electronic materials |
JPH10144633A (ja) * | 1996-11-08 | 1998-05-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5908307A (en) * | 1997-01-31 | 1999-06-01 | Ultratech Stepper, Inc. | Fabrication method for reduced-dimension FET devices |
US5885904A (en) * | 1997-02-14 | 1999-03-23 | Advanced Micro Devices, Inc. | Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer |
US5904575A (en) * | 1997-02-14 | 1999-05-18 | Advanced Micro Devices, Inc. | Method and apparatus incorporating nitrogen selectively for differential oxide growth |
US5918140A (en) | 1997-06-16 | 1999-06-29 | The Regents Of The University Of California | Deposition of dopant impurities and pulsed energy drive-in |
CA2211949A1 (en) * | 1997-07-21 | 1999-01-29 | David Farley Johnson | Nonaqueous compositions for parenteral administration |
US6107641A (en) * | 1997-09-10 | 2000-08-22 | Xerox Corporation | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
JPH11298090A (ja) * | 1998-04-09 | 1999-10-29 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
US5956603A (en) * | 1998-08-27 | 1999-09-21 | Ultratech Stepper, Inc. | Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits |
KR100281692B1 (ko) * | 1998-10-17 | 2001-03-02 | 윤종용 | 반도체 장치의 자기정렬 콘택 패드 및 그 형성 방법 |
US6586318B1 (en) * | 1999-12-28 | 2003-07-01 | Xerox Corporation | Thin phosphorus nitride film as an N-type doping source used in laser doping technology |
-
1999
- 1999-12-28 US US09/473,576 patent/US6586318B1/en not_active Expired - Lifetime
-
2000
- 2000-12-13 DE DE60045302T patent/DE60045302D1/de not_active Expired - Lifetime
- 2000-12-13 EP EP00311109A patent/EP1113486B1/de not_active Expired - Lifetime
- 2000-12-14 JP JP2000379598A patent/JP2001223174A/ja active Pending
-
2002
- 2002-10-28 US US10/282,265 patent/US6818535B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2001223174A (ja) | 2001-08-17 |
US6818535B2 (en) | 2004-11-16 |
EP1113486B1 (de) | 2010-12-01 |
US20030067037A1 (en) | 2003-04-10 |
US6586318B1 (en) | 2003-07-01 |
EP1113486A2 (de) | 2001-07-04 |
EP1113486A3 (de) | 2001-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60045302D1 (de) | Verfahren zur Dotierung eines Halbleiterkörpers | |
DE60036449D1 (de) | Verfahren zur hestellung eines dünnschichtfeldeffekttransistors | |
DE60038423D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE60045636D1 (de) | Verfahren zur behandlung eines halbleitersubstrats | |
DE60044639D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
DE50001388D1 (de) | Verfahren zur rasterisierung eines graphikgrundelements | |
DE60022857D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE60042254D1 (de) | Verfahren zur Herstellung einer Halbleiter-Anordnung | |
DE69912376D1 (de) | Verfahren zur herstellung eines halbleiterbauelements | |
DE50114579D1 (de) | Verfahren zur Bedienung eines Aufzuges | |
DE69941230D1 (de) | Verfahren zur Herstellung eines Halbleitergehäuses | |
DE60007688D1 (de) | Verfahren und Vorrichtung zur Herstellung eines Werkzeugs | |
DE50208649D1 (de) | Verfahren zur bereitschaftshaltung eines kombikraftwerkes | |
DE60122131D1 (de) | Verfahren zum verkleben eines fügeteils | |
DE50004536D1 (de) | Verfahren zum Vermessen eines Körperbereichs | |
ATA67898A (de) | Verfahren zur gewinnung eines desinfektionsmittels | |
DE50113179D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE60044470D1 (de) | Verfahren zur herstellung eines halbleiterelement | |
DE60041503D1 (de) | Verfahren zur konturkorrektur | |
DE60000836T2 (de) | Verfahren zur herstellung eines dns chip | |
DE50001656D1 (de) | Verfahren zur herstellung eines planetenträgers | |
DE69922617D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
DE50115216D1 (de) | Halbleiterbauelement und verfahren zur identifizierung eines halbleiterbauelementes | |
DE50208521D1 (de) | Verfahren zur Ausbildung eines Silizium-Halbleiterkörpers | |
DE60034387D1 (de) | Verfahren zur Bedienung eines Kranes |