CN1748301A - 热处理用晶片支持器具及热处理装置 - Google Patents
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Abstract
本发明是提供一种不会发生由高温热处理引起的伤痕或滑移位错,且加工容易、可降低成本的热处理用晶片支持器具及热处理装置。本发明的热处理用晶片支持器具,是至少具有支持热处理的晶片的多个晶片支持构件、和保持该支持构件的支持构件支撑器的热处理用晶片支持器具,其特征在于:所述多个晶片支持构件中的至少一部分支持构件是,其与所述晶片的接触部相对于所述支持构件支撑器可动。
Description
技术领域
本发明是有关于对半导体晶片例如硅晶片等晶片施行热处理时所用的热处理用晶片支持器具及热处理装置。
背景技术
就批量(batch)式热处理用晶片支持器具而言,一般采用在称为舟皿(boat)的支柱具有沟槽的构造物的沟槽,平行地收纳保存多个晶片的形式。特别是在1000℃以上的高温热处理中,由耐热性等来看,一般采用SiC作为晶片支持器具的原材料,使用借助金刚石切割机(DiamondCutter)等,直接在支柱上施行切削加工沟槽的方法。
可是使用此方法,可加工的形状受到限制的缘故,曲面等复杂的形状加工很困难。此外,在切削加工中,也有容易在沟面产生毛边的问题。并且由于欲除去所产生的毛边的追加加工困难、或欲降低接触晶片的沟的表面粗度的研磨困难,故于热处理中,在与晶片的接触部会发生伤痕或滑移位错的问题(日本特开平7-161654号公报、特开平第8-107081号公报)。此外,在加工中,由于支柱易破损,需要较大的劳力和加工时间,故生产性差,降低成本困难。
上述批量式热处理是使用电阻加热(加热器加热),一次热处理多数片晶片,不过除了此种批量式热处理装置外,最近主要应用于单片处理,也频繁地采用借助灯光加热式等,施行急速加热、急速冷却热处理的RTP(Rapid Thermal Processing)装置。
作为使用RTP装置的热处理,例如举例有:为了消除晶片表面缺陷的热处理、为了消除氧供给体的热处理、为了形成浅扩散层的热处理(RTA:Rapid Thermal Annealing)、或是为了形成薄氧化膜的热处理(RTO:Rapid Thermal Oxidation)等。此外,使用灯光加热的单片式外延生长或绝缘膜等气相生长,也广义地包含在采用RTP装置的热处理中。
像这样的RTP处理也与批量式热处理装置同样地,采用供热处理的晶片支持器具(也称为晶片载台(Suscepter)),就晶片支持器具与晶片的接点而言,会发生所谓滑移位错的问题(日本特开第2002-164300号公报)。
发明内容
本发明是为解决上述课题的发明,目的在于提供一种不会发生因高温热处理的伤痕或滑移位错,加工容易,可降低成本的热处理用晶片支持器具及热处理装置。
为解决上述课题,本发明的热处理用晶片支持器热处理用晶片支持器具,是至少具有支持热处理的晶片的多个晶片支持构件、和保持该支持构件的支持构件支撑器的热处理用晶片支持器具,其特征在于:所述多个晶片支持构件中的至少一部分支持构件是,其与所述晶片的接触部相对于所述支持构件支撑器可动。
所述接触部的形状,相对于所述热处理的晶片,为凸的曲面,特别以球形或椭圆球形为佳。所述晶片支持构件是由销构件所构成,所述支持构件支撑器是由保持所述销构件的销构件支撑器所构成,所述销构件是嵌入于形成在该销构件支撑器的销孔所配置的构成最适合。所述销构件是构成可从所述销构件支撑器取下为佳,并且加工圆柱状的原材料为佳。所述销构件及销构件支撑器的原材料举例有:SiC、硅或石英。所述销孔最好设多个,而且该销孔的形状以缝隙状为佳。所述缝隙状销孔是从所述销构件支撑器的中心配置成放射状为佳。所述销构件支撑器最好为圆板状或圆环状,该销构件支撑器为圆板状时,在其中心位置设有圆状销孔的构成最适合。
所述晶片支持构件是包括作为与所述热处理的晶片的接触部的旋转体,该旋转体是收容于形成在所述晶片支持构件或所述支持构件支撑器的旋转体收容孔,也可借助与所述热处理的晶片的摩擦力,进行旋转。
所述旋转体为球形、椭圆球形、圆筒形或圆柱形的任一种形状为佳。所述旋转体收容孔以缝隙槽状为佳,该缝隙槽状的旋转体收容孔最好是从所述支持构件支撑器的中心,配置成放射状。所述支持构件支撑器为圆板状或圆环状为佳。所述旋转体的原材料可采用SiC、硅或石英。
本发明的热处理用晶片支持器具,更具有:保持多个所述支持构件支撑器的支柱、和保持该支柱的基座。所述支持构件支撑器是构成可从所述支柱取下最适合。所述支柱及基座的原材料可采用SiC、硅或石英。
本发明的热处理装置,具备有上述的本发明的热处理用晶片支持器具。
附图说明
图1是表示本发明的热处理用晶片支持器具的第一实施方式的侧面说明图。
图2是表示从图1的构造取下上基座及上侧的晶片的状态的上面说明图。
图3是表示销构件的制造方式的说明图,分别表示(a)为圆柱状的销构件原材料,以及(b1)为销构件的完成品的一例,以及(b2)为销构件的完成品的其它例。
图4是表示应用于本发明的热处理用晶片支持器具的销构件支撑器(holder)之一的构造例的俯视图。
图5是图2的V-V线放大断面图。
图6是图2的VI-VI线放大断面图,分别表示(a)是销构件为直立状态,(b)是销构件倾斜于外周方向的状态,(c)是销构件倾斜于中心方向的状态,(d)是于销构件的下端部形成圆角(R)的形状。
图7是表示本发明的热处理用晶片支持器具的第二实施方式的侧面说明图。
图8是表示应用于本发明的热处理用晶片支持器具的销构件支撑器的其它构造例的俯视图。
图9是表示本发明的热处理用晶片支持器具的第三实施方式主要部份的侧面说明图,分别表示(a)为晶片支持状态的一例,(b)是从(a)状态,伸长晶片并旋转作为晶片支持构件的旋转体的状态。
图10是作为晶片支持构件的各种形状的旋转体的俯视图,分别表示(a)为球形,(b)为椭圆球形,(c)为圆柱形或圆筒形。
图11是表示本发明的热处理用晶片支持器具的第四实施方式主要部份的侧面说明图,分别表示(a)为晶片支持状态的一例,(b)是从(a)状态,伸长晶片并旋转作为晶片支持构件的旋转体的状态。
图12是表示纵型热处理炉的一例的概略说明图。
图13是表示RTP装置的一例的概略说明图。
图14是实施例2的说明图,(a)是所使用的热处理用晶片支持器具的俯视图,(b)是使用X射线形貌法(X-Ray Topography)来观察热处理后的晶片的结果的照片。
图15是比较例1的说明图,(a)是表示在所使用的晶片支撑器载置晶片状态的断面说明图,(b)是表示使用X射线形貌法来观察热处理后的晶片的结果的照片。
图16是实施例3的说明图,(a)是表示所使用的热处理用晶片支持器具的俯视图,(b)是表示使用X射线形貌法来观察热处理后的晶片的结果的照片。
图中,10-晶片支持器具,12、14-基座,16-柱,18、20-承孔,22-销构件,22a-销构件原材料,26-接触部,28-嵌合部,W-晶片,30-插入槽,32-销构件支撑器,33-开口部,34a-凹状嵌合孔,34b-缝隙状嵌合孔,40-支持构件支撑器,42-晶片支持构件,44-梯形构件,46-旋转体收容孔,48-旋转体,50、52-箭头,110-热处理炉,112-加热器,114-工艺管件,116-舟皿,118-保温筒,120-炉口部,122-盖体,210-热处理装置,211-处理室,212-加热灯,213-自动瞬间开闭器,214-石英托盘,215-三点支持部,216-缓冲器,217-高温计,219-气体导入口,220-气体排气口。
具体实施方式
以下根据所附图面来说明本发明的实施方式,但图示例为举例表示的例示,在不脱离本发明的技术思想的限制下,当然可做各种变形。
在图1中,10是有关本发明的热处理用晶片支持器具。该晶片支持器具10是具有,面对面设置在上下方向的上下一对基座12、14、以及立设在该上下基座12、14之间的多根(图2的例为三根)支柱16。
借助在穿设在该上基座12的下面的承孔18及穿设在该下基座14的上面的承孔20,形成分别嵌合着该支柱16的上端部及下端部的构造,该支柱16是保持为可从该基座12、14取下的状态。
22是作为用于支持施行热处理的晶片W的晶片支持构件的销构件。该销构件22乃如图3(b1)、(b2)所示,在前端部设有用来支持晶片W的接触部26,且在基端部设有嵌合部28。
上述销构件22的接触部26的形状,相对所支持的晶片W,以凸的曲面为佳。图1、图2及图3(b1)所示的例子中,该接触部26的形状是表示球形的情况。
该接触部26的形状,乃如上所述,只要是相对所支持的晶片W为凸的曲面的话,当然可采用球形以外的形状,如图3(b2)及图7的第二实施方式所示,也可将接触部26形成椭圆球形。再者,在图7中,与图1相异的点仅在销构件22的形状,省略针对构造的再度说明,不过与图10构件相同或类似的构件,以相同符号表示。
在所述支柱16的侧面设有相同高度的插入槽30。32是作为可拆装地保持上述销构件22的支持构件支撑器的销构件支撑器,其形状未特别限定,不过在图2及图4表示形成圆板状的情况。借助在所述插入槽30插入销构件支撑器32,销构件支撑器32,对支柱16而言,可取下地插入保持。此外,销构件支撑器32是如图2及图4所示,形成圆板状外,如图8所示,也可在中央部形成穿设开口部33的圆环状。
如图2及图4所示,在所述圆板状销构件支撑器32,对应在该销构件22的嵌合部28,而穿设有凹状嵌合孔34a及缝隙状嵌合孔34b。这些嵌合孔(销孔)可为贯通孔或有底孔的任一种孔。借助在设置在该圆板状销构件支撑器32的中心部的该凹状嵌合孔34a,嵌入该嵌合部28,该销构件22即可取出地保持在该圆板状销构件支撑器32上。此外,嵌合在自该圆板状销构件支撑器32的中心部放射状设置的缝隙状嵌合孔34b的销构件22,是针对热处理工艺中的晶片W的伸缩方向的动作,欲缓和发生在销构件22和晶片W的接触面的应力的构造,即,自晶片W的伸缩方向即从圆板状销构件支撑器32的中心向着外周方向[图6(b)]或其相反方向即朝中心方向[图6(c)],可相对圆板状销构件支撑器32动作数mm程度。此时,销构件22易动作的缘故,在该嵌合部28的下端部的周缘,如图6(d)所示,形成称为圆角(R)的圆形为佳。
此外,在图2、图4及图8所示的例子中,表示支柱16的设置根数为三根的情形,不过支柱16的设置根数只要是可支持基座12、14的根数即可,并未特别限定。
所述销构件22是如图3(a)、(b1)、(b2)所示,将圆柱状的销构件原材料22a,利用旋盘施以研磨加工,由此就很容易取得,且销构件22特别容易控制其接触部26的表面粗糙度。销构件原材料22a可采用直径1至7mm左右,长度5至10mm左右的SiC、Si(单晶、多晶)、石英等。此外,支柱16及基座12、14的原材料也很适合采用SiC、硅或石英。
设置在图2及图4所示的圆板状销构件支撑器32的中心部的凹状嵌合孔34a是为直径1至7mm左右的圆形,从销构件支撑器32的中心部呈放射状设置的缝隙状嵌合孔34b是为宽幅1至7mm、长度4至21mm左右。缝隙状嵌合孔34b是为将其缝隙的长边方向,从销构件支撑器32的中心部呈放射状配置3至24处左右(图2及图4为六处)。将销构件支撑器32乃图8形成圆环状的情形下,理所当然的省略掉设置在销构件支撑器32的中心部的嵌合孔34a,不过将销构件支撑器32如图4形成圆板的情形下,也可省略掉嵌合孔34a。
如上所述,在本发明的晶片支持器具中,销构件的前端部的与晶片之间的接触部的形状,对晶片而言,以形成凸的曲面方式所构成,在热处理中,就不会在与晶片的接触部发生伤痕或滑移位错,而因生产性提升,可降低成本。
销构件22的与晶片W之间的接触部26,还可以另外加工其接触部26的表面粗糙度,仅将接触部26形成所希望的表面粗糙度。并且,借助适当选择销构件22的形状和嵌合孔34a、34b,即可任意设计晶片W与销构件22接触的位置(晶片W的面内的位置)或接触部26的形状。而且,采用能够将销构件22形成为从销构件支撑器32取出的构成时,清洗或更换都很容易,此外,也可再加工表面而再利用。
在上述实施方式中,举例表示:销构件22对销构件支撑器32而言,是处于通过嵌合孔34a、34b而可拆装地保持的状态,销构件支撑器32对支柱16而言,通过插入槽30而保持在可拆装状态,此外支柱16对基座12、14而言,通过承孔18、20而保持在可拆装状态的构造,不过对应需要,也可采用以下方式,即,将销构件22相对在销构件支撑器32而固定为不可拆装,将销构件支撑器32相对在支柱16而固定为不可拆装,此外,将支柱16相对在基座12、14而固定为不可拆装。
图1至图8所示的例子中,表示采用销构件22作为晶片支持构件的情形,不过也可采用销构件22以外的构件作为晶片支持构件,根据图9至图11在以下做说明。
在图9(a)、(b)中,40是为晶片支持构件支撑器,构成有关本发明的热处理用晶片支持器具。该支持构件支撑器40是用来保持晶片支持构件42。该晶片支持构件42是具有设置在支持构件支撑器40的上面的梯形构件44。在该梯形构件44的上面穿设有旋转体收容孔46。在该旋转体收容孔46中可旋转地嵌入作为与施行热处理的晶片W之间的接触部的旋转体48。箭头50是表示旋转体48的规定位置。就该旋转体48的形状而言,并未特别限定,不过如图10所示,由上面观看可采用(a)球形、(b)椭圆球形、(c)圆柱形或圆筒形等形状。
根据上述的构成,如图9(a)所示,晶片W借助旋转体48而被接触支持的状态下,施行晶片W的热处理,则晶片会朝以箭头52所示的晶片W的延伸方向伸长,而且,由箭头50的位置即可明白,上述旋转体48是如图9(b)所示地进行旋转,因此可抑制在热处理中的晶片W的与旋转体的接触部发生伤痕或滑移位错。
再者,在图9(a)、(b)的例子中,在梯形构件44的上面穿设旋转体收容孔46,不过形成省略该梯形构件44而在支持构件支撑器40的上面,穿设旋转体收容孔46,在该旋转体收容孔46直接嵌入旋转体48的构成也可。此外,也可形成其它形成的构件取代梯形构件44。
在图9(a)、(b)的例子中,是表示将旋转体48嵌入到梯形构件44的旋转体收容孔46的情形,不过如图11(a)、(b)所示,该旋转体收容孔46的形状形成缝隙槽状,成为在该缝隙槽状旋转体收容孔46可游动旋转地收容旋转体48的构成也可。此时,缝隙槽状旋转体收容孔46最适合从支持构件支撑器40的中心配置成放射线状。借助此构成,如图11(a)所示,晶片W使用旋转体48而接触支持的状态下,施行晶片W的热处理的话,晶片W会伸长至以箭头52所示的晶片W的延伸方向,而且,由箭头50的位置即可明白,上述旋转体48是图11(b)所示地进行旋转,这样,与图9的情形同样地,能够抑制在热处理中的晶片W的与旋转体的接触部发生伤痕或滑移位错。特别是在图11的构成中,上述旋转体48是利用旋转,此时的旋转摩擦极小,在防止产生起因在摩擦的伤痕或滑移位错上,有很大的效果。
再者,图11(a)、(b)的例子中,也在该梯形构件44的上面穿设缝隙槽状旋转体收容孔46,不过形成省略该梯形构件44,而在支持构件支撑器40的上面穿设缝隙槽状旋转体收容孔46,在该缝隙槽状旋转体收容孔46直接可游动旋转地收容旋转体48的构成也可。
本发明的热处理装置乃作为具备有上述第一至第四实施方式举例所示的本发明的热处理用晶片支持器具的热处理装置。
作为此种热处理装置已知的有:例如像12图所示的纵型热处理炉。同图中,110为纵型热处理炉。该热处理炉110是由以下部分构成:同心状配置的加热器112、和配置其内侧的工艺管件(process tube)114、和载置多个晶片的舟皿(boat)116、和拆装自如地安装该舟皿116上的保温筒118、和在其下部在热处理时塞住工艺管件114下端的炉口部120的盖体122、和使该舟皿116、保温筒118及盖体122向着工艺管件114的内部而上下移动的未图示的升降机构。再者,115是设置在工艺管件114的下端部的凸缘部。在该纵型热处理炉110中,在上述舟皿116适用本发明的热处理用晶片支持器具,由此以该纵型热处理炉110作为本发明的热处理装置使用。
此外,作为此种热处理装置,可采用急速加热、急速冷却(RTP)装置。RTP装置的一例根据图13做说明。图13是表示RTP装置的一例的概略说明图。在图13中,210为热处理装置,换句话就是RTP装置。该热处理装置210具有由石英制成的处理室211,在该处理室211内对晶片W进行热处理。加热是使用从上下左右围绕处理室211的方式所配置的加热灯212来施行。该加热灯212可个别控制独立供给的电力。
在该处理室211的气体导入侧,设置气体导入口219,在气体的排气侧,装备自动瞬间关闭器(Autoshutter)213,封锁住外气。在自动瞬间关闭器213设有由闸门阀构成的可开关的未图示的晶片插入口。此外,在自动瞬间关闭器13设有气体排气口220,可调整炉内的气氛。
而且,晶片W配置在支持治具上,例如配置在形成于石英托盘214的三点支持部215之上。在石英托盘214的气体导入口侧,设置石英制的缓冲器216,防止从气体导入口219被导入的气体,直接伤害到晶片W。
此外,在处理室211设有未图示的温度测定用特殊窗,使用设置在处理室211的外部的高温计217,通过该特殊窗来测定晶片W的温度。
在该RTA装置210中,借助应用本发明的热处理用晶片支持器具来取代晶片支持器具例如石英托盘214,则该RTA装置210可作为本发明的热处理装置使用。
在以下列举实施例,对本发明更具体化,不过实施例乃为举例所示的例子,当然并不限在所解释的例子。
实施例1
基座、支柱、销构件的原材料是使用SiC,制作图1及图2所记载的热处理用晶片支持器具。此时,销构件是使用直径5mm、长度10mm的圆柱状材料,并在其前端部形成直径约5mm的球状接触部,且基端部是形成直径约3mm。此外,放射状设置的六处的缝隙状销孔,是形成为其中央部配置在从销构件支撑器的中心相隔110mm的位置。
使用此种热处理用晶片支持器具,施行直径300mm、结晶方位<100>、p型、约10Ωcm的CZ硅单晶晶片的热处理。调查与晶片的接触部的伤痕或滑移位错的发生状况。
热处理条件是氩100%气氛下、1200℃、1小时、晶片的投入及取出温度为700℃。
对热处理后的晶片使用X射线形貌法(X-Ray Topography),来调查晶片支持器具和晶片的接触部的伤痕或滑移位错的发生状况的结果,几乎看不见这些发生情形。
实施例2
基座、支柱、销构件的原材料是使用SiC,制作如图1所记载的热处理用晶片支持器具。但销构件支撑器32为直径320mm、厚度1mm,嵌入销构件的缝隙34b为宽幅3.5mm、长度9mm的贯通孔,如图14(a)所示,在半径140mm的位置,以120度间隔在三处,在半径120mm的位置,以120度间隔在三处,并且在半径60mm的位置,以120度间隔在三处的合计九处,分别形成放射状,在该九处全部配置可动销构件。此时,销构件是使用直径8mm、长度10mm的圆柱状材料,在其前端部形成直径约6mm的球状接触部,且基端部为直径约3mm。销构件和晶片的接触面积,九处合计也为10mm2以下。
使用此种热处理用晶片支持器具,施行直径300mm、结晶方位<100>、p型、约10Ωcm的CZ硅单晶晶片的热处理,调查与晶片的接触部的滑移位错的发生状况。
热处理条件是,假想为SIMOX晶片制作用的高温长时间热处理,氩和氧的混合气体气氛下、1350℃、8小时、晶片的投入及取出温度为600℃。其中,SIMOX(Separation by Ion-implanted Oxygen)是作为SOI(SiliconOn Insulator)晶片的制作方法之一,是在硅单晶晶片中注入氧离子进行热处理,由此在硅单晶晶片内部形成SiO2层的方法。将热处理后的晶片,使用X射线形貌法所观察的结果表示在第14图(b)。根据图14(b)可知,尽管热处理条件为1350℃、8小时间的极严格条件,也几乎未见发生滑移位错。在这里,在图14(a)、(b)中,60是表示晶片的触点位置的箭头。
比较例1
如图15(a)所示,使用以往的晶片支撑器70(与晶片的接触部为环状,接触面积约为25000mm2),在利用与实施例2相同处理的晶片W的相同热处理条件下,进行热处理,使用X射线形貌法来观察滑移位错的结果表示在图15(b)。
由图15(b)即可明白,使用以往的晶片支撑器的情况下,发生滑移位错的情形较多。此外,与图14(b)比较,其差异很显着,得知本发明的晶片支持器具的耐滑特性极高。
实施例3
为了确认可动销构件的效果,在实施例2所使用的销构件支撑器32中,在半径120mm的位置,另外制作以120度间隔的仅三处的销构件,作为固定销构件22f(图16(a)),使用这个,在与实施例2相同的条件下,进行热处理后,使用X射线形貌法来观察滑移位错的结果表示在图16(b)。在图16(a)、(b)中,60是表示晶片的刻痕位置的箭头。
根据图16(b)可知,与将九处全部作为可动销构件的情形的图14(b)相比,发现会稍微产生滑移位错,得知该滑移位错的发生位置大致上与固定销构件的位置一致。因而,确认与晶片支持器具的晶片的接触部的可动性具有滑移位错抑制效果。
像这样,与晶片支持器具的晶片的接触部形成可动性的话,可得到滑移位错抑制效果,故如以往的晶片支持器具,与接触部完全固定的情形相比时,如实施例3这样使接触部的一部分形成为赋予可动性的话,可得到所谓滑移位错降低的本发明效果。当然所有的接触部形成可动性是最有效。
工业上的可利用性
如以上所述,使用本发明的热处理用晶片支持器具进行晶片热处理时,能有效抑制因高温热处理的伤痕或滑移位错,且本发明的热处理用晶片支持器具,其加工很容易,故能达到降低制作成本的大幅效果。特别是本发明的热处理用晶片支持器具,如SIMOX晶片,对高温长时间的热处理而言,有效性极高。
此外,根据具备此种热处理用晶片支持器具的本发明的热处理装置,即可提供一种高温热处理后,伤痕或滑移位错少的晶片,故可提高使用该晶片所制造的装置品质或成品率。
Claims (22)
1.一种热处理用晶片支持器具,是至少具有支持热处理的晶片的多个晶片支持构件、和保持该支持构件的支持构件支撑器的热处理用晶片支持器具,其特征在于:
所述多个晶片支持构件中的至少一部分支持构件是,其与所述晶片的接触部相对于所述支持构件支撑器可动。
2.根据权利要求1项所记载的热处理用晶片支持器具,其特征在于:
所述接触部的形状,相对于所述热处理的晶片,为凸的曲面。
3.根据权利要求1或者2项所记载的热处理用晶片支持器具,其特征在于:
所述接触部的形状为球形或椭圆球形。
4.根据权利要求1~3中任意一项所记载的热处理用晶片支持器具,其特征在于:
所述晶片支持构件是由销构件所构成,所述支持构件支撑器是由保持所述销构件的销构件支撑器所构成,所述销构件是嵌入于形成在该销构件支撑器的销孔而配置。
5.根据权利要求4项所记载的热处理用晶片支持器具,其特征在于:
所述销构件是以可从所述销构件支撑器取下的方式构成。
6.根据权利要求4或者5项所记载的热处理用晶片支持器具,其特征在于:
所述销构件是由圆柱状的原材料加工成。
7.根据权利要求4~6中任意一项所记载的热处理用晶片支持器具,其特征在于:
所述销构件及销构件支撑器的原材料为SiC、硅或石英。
8.根据权利要求4~7中任意一项所记载的热处理用晶片支持器具,其特征在于:
设多个所述销孔。
9.根据权利要求4~8中任意一项所记载的热处理用晶片支持器具,其特征在于:
所述销孔为缝隙状。
10.根据权利要求9项所记载的热处理用晶片支持器具,其特征在于:
所述缝隙状销孔是以从所述销构件支撑器的中心成构成放射状的方式配置。
11.根据权利要求4~10中任意一项所记载的热处理用晶片支持器具,其特征在于:
所述销构件支撑器为圆板状或圆环状。
12.根据权利要求11项所记载的热处理用晶片支持器具,其特征在于:
所述销构件支撑器为圆板状,在其中心位置设有圆状销孔。
13.根据权利要求1或者2项所记载的热处理用晶片支持器具,其特征在于:
所述晶片支持构件包括作为与所述热处理的晶片的接触部的旋转体,该旋转体是收容在形成于所述晶片支持构件或所述支持构件支撑器上的旋转体收容孔,可借助与所述热处理的晶片的摩擦力进行旋转。
14.根据权利要求13项所记载的热处理用晶片支持器具,其特征在于:
所述旋转体为球形、椭圆球形、圆筒形或圆柱形中的任一种形状。
15.根据权利要求13或者14项所记载的热处理用晶片支持器具,其特征在于:
所述旋转体收容孔为缝隙槽状。
16.根据权利要求15项所记载的热处理用晶片支持器具,其特征在于:
所述缝隙槽状的旋转体收容孔是从所述支持构件支撑器的中心配置成放射状。
17.根据权利要求13~16中任意一项所记载的热处理用晶片支持器具,其特征在于:
所述支持构件支撑器为圆板状或圆环状。
18.根据权利要求13~17中任意一项所记载的热处理用晶片支持器具,其特征在于:
所述旋转体的原材料为SiC、硅或石英。
19.根据权利要求1~18项中任意一项所记载的热处理用晶片支持器具,其特征在于:
还具有:保持多个所述支持构件支撑器的支柱、和保持该支柱的基座。
20.根据权利要求19项所记载的热处理用晶片支持器具,其特征在于:
所述支持构件支撑器是以可从所述支柱取下的方式构成。
21.根据权利要求19或者20项所记载的热处理用晶片支持器具,其特征在于:
所述支柱及基座的原材料为SiC、硅或石英。
22.一种热处理装置,其特征为:
具有权利要求1~21中任意一项所记载的热处理用晶片支持器具。
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- 2004-03-22 EP EP04722467A patent/EP1608011A4/en not_active Withdrawn
- 2004-03-22 US US10/549,805 patent/US7393207B2/en active Active
- 2004-03-22 KR KR1020057013487A patent/KR100877129B1/ko active IP Right Grant
- 2004-03-22 JP JP2005504041A patent/JP4363401B2/ja not_active Expired - Fee Related
- 2004-03-22 WO PCT/JP2004/003858 patent/WO2004086496A1/ja active Application Filing
- 2004-03-22 CN CNB2004800034873A patent/CN100352032C/zh not_active Expired - Fee Related
- 2004-03-26 TW TW093108376A patent/TW200501306A/zh not_active IP Right Cessation
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CN101275286A (zh) * | 2006-12-27 | 2008-10-01 | 斯尔瑞恩公司 | 用于在晶片退火期间防止滑移位错的晶片支撑销以及使用其的晶片退火方法 |
CN102648518A (zh) * | 2009-10-20 | 2012-08-22 | 株式会社尼康 | 基板支承装置、基板支承构件、基板搬送装置、曝光装置、及元件制造方法 |
CN104603567A (zh) * | 2012-09-10 | 2015-05-06 | Soitec公司 | 用于竖直烘箱的多个晶片的支撑设备 |
US9835377B2 (en) | 2012-09-10 | 2017-12-05 | Soitec | Support device for a plurality of wafers for a vertical oven |
CN108352343A (zh) * | 2015-12-30 | 2018-07-31 | 马特森技术有限公司 | 毫秒退火系统中的衬底支承件 |
CN108352343B (zh) * | 2015-12-30 | 2022-04-08 | 玛特森技术公司 | 毫秒退火系统中的衬底支承件 |
US11810802B2 (en) | 2015-12-30 | 2023-11-07 | Beijing E-town Semiconductor Technology Co., Ltd. | Substrate support in a millisecond anneal system |
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US7393207B2 (en) | 2008-07-01 |
CN100352032C (zh) | 2007-11-28 |
TW200501306A (en) | 2005-01-01 |
TWI327759B (zh) | 2010-07-21 |
EP1608011A1 (en) | 2005-12-21 |
JP4363401B2 (ja) | 2009-11-11 |
US20070006806A1 (en) | 2007-01-11 |
JPWO2004086496A1 (ja) | 2006-06-29 |
KR20060004652A (ko) | 2006-01-12 |
EP1608011A4 (en) | 2010-07-21 |
KR100877129B1 (ko) | 2009-01-07 |
WO2004086496A1 (ja) | 2004-10-07 |
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