CN102460658A - 硅晶片及硅晶片的热处理方法 - Google Patents
硅晶片及硅晶片的热处理方法 Download PDFInfo
- Publication number
- CN102460658A CN102460658A CN2010800258687A CN201080025868A CN102460658A CN 102460658 A CN102460658 A CN 102460658A CN 2010800258687 A CN2010800258687 A CN 2010800258687A CN 201080025868 A CN201080025868 A CN 201080025868A CN 102460658 A CN102460658 A CN 102460658A
- Authority
- CN
- China
- Prior art keywords
- wafer
- silicon wafer
- mentioned
- space
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 161
- 239000010703 silicon Substances 0.000 title claims abstract description 161
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 159
- 238000000034 method Methods 0.000 title claims abstract description 101
- 230000007547 defect Effects 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims description 66
- 239000007789 gas Substances 0.000 claims description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 46
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- 230000001590 oxidative effect Effects 0.000 claims description 34
- 239000011261 inert gas Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000010791 quenching Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 abstract description 36
- 230000008569 process Effects 0.000 abstract description 17
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000011800 void material Substances 0.000 abstract 3
- 238000011109 contamination Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 308
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 22
- 238000012545 processing Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 15
- 238000001816 cooling Methods 0.000 description 12
- 230000008030 elimination Effects 0.000 description 11
- 238000003379 elimination reaction Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000014759 maintenance of location Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000003344 environmental pollutant Substances 0.000 description 7
- 231100000719 pollutant Toxicity 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229940038504 oxygen 100 % Drugs 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
第1气氛FA | 第2气氛FB | 最高到达温度T1(℃) | 保持时间t(秒) | LSTD(5μm)减少率(%) | |
实施例3 | Ar | O2 | 1350 | 15 | 98 |
比较例2 | Ar | O2 | 1250 | 30 | 85 |
比较例3 | O2 | - | 1350 | 15 | 89 |
比较例4 | O2 | - | 1250 | 30 | 70 |
比较例5 | Ar | - | 1350 | 15 | 67 |
比较例6 | Ar | - | 1250 | 30 | 28 |
Claims (8)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009134252A JP5455449B2 (ja) | 2009-06-03 | 2009-06-03 | シリコンウェーハの熱処理方法 |
JP2009-134252 | 2009-06-03 | ||
JP2009153776A JP2011009631A (ja) | 2009-06-29 | 2009-06-29 | シリコンウェーハの熱処理方法 |
JP2009-153776 | 2009-06-29 | ||
JP2009179319A JP2011035129A (ja) | 2009-07-31 | 2009-07-31 | シリコンウェーハ |
JP2009-179319 | 2009-07-31 | ||
PCT/JP2010/003583 WO2010140323A1 (ja) | 2009-06-03 | 2010-05-28 | シリコンウェーハ及びシリコンウェーハの熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102460658A true CN102460658A (zh) | 2012-05-16 |
CN102460658B CN102460658B (zh) | 2016-02-10 |
Family
ID=43297466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080025868.7A Active CN102460658B (zh) | 2009-06-03 | 2010-05-28 | 硅晶片及硅晶片的热处理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8999864B2 (zh) |
KR (1) | KR101381537B1 (zh) |
CN (1) | CN102460658B (zh) |
WO (1) | WO2010140323A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013048137A (ja) * | 2011-08-29 | 2013-03-07 | Covalent Silicon Co Ltd | シリコンウェーハの製造方法 |
TWI523107B (zh) * | 2011-09-27 | 2016-02-21 | 環球晶圓日本股份有限公司 | 矽晶圓之熱處理方法 |
JP5965607B2 (ja) * | 2011-10-19 | 2016-08-10 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286208A (ja) * | 1999-03-31 | 2000-10-13 | Nec Corp | 半導体製造装置 |
JP2002075896A (ja) * | 2000-08-25 | 2002-03-15 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP2002110684A (ja) * | 2000-09-27 | 2002-04-12 | Toshiba Corp | 半導体基板及びその製造方法 |
US20040102056A1 (en) * | 2000-10-25 | 2004-05-27 | Satoshi Tobe | Production method for silicon wafer and silicon wafer |
CN1940150A (zh) * | 2005-09-27 | 2007-04-04 | 东芝陶瓷株式会社 | 硅片的制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5360769A (en) * | 1992-12-17 | 1994-11-01 | Micron Semiconductor, Inc. | Method for fabricating hybrid oxides for thinner gate devices |
JPH0786289A (ja) * | 1993-07-22 | 1995-03-31 | Toshiba Corp | 半導体シリコンウェハおよびその製造方法 |
JP3085146B2 (ja) | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
US6436846B1 (en) | 1998-09-03 | 2002-08-20 | Siemens Aktiengesellscharft | Combined preanneal/oxidation step using rapid thermal processing |
JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
WO2002084728A1 (en) * | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Control of thermal donor formation in high resistivity cz silicon |
JP2003077851A (ja) | 2001-08-28 | 2003-03-14 | Applied Materials Inc | 熱処理方法及び装置 |
DE10205084B4 (de) | 2002-02-07 | 2008-10-16 | Siltronic Ag | Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe |
DE60224099T2 (de) | 2002-04-10 | 2008-04-03 | Memc Electronic Materials, Inc. | Silizium wafer und verfahren zur steuerung der tiefe einer defektfreien zone von einem silizium wafer mit idealem sauerstoffniederschlagverhalten |
US6955718B2 (en) | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
DE10336271B4 (de) * | 2003-08-07 | 2008-02-07 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
JP4552415B2 (ja) | 2003-10-14 | 2010-09-29 | 信越半導体株式会社 | シリコンウエーハの製造方法 |
JP4854936B2 (ja) | 2004-06-15 | 2012-01-18 | 信越半導体株式会社 | シリコンウエーハの製造方法及びシリコンウエーハ |
JP2006261632A (ja) * | 2005-02-18 | 2006-09-28 | Sumco Corp | シリコンウェーハの熱処理方法 |
EP2144280B1 (en) * | 2007-05-02 | 2010-12-29 | Siltronic AG | Silicon wafer and method for manufacturing the same |
-
2010
- 2010-05-28 US US13/322,080 patent/US8999864B2/en active Active
- 2010-05-28 KR KR1020117027499A patent/KR101381537B1/ko active IP Right Grant
- 2010-05-28 CN CN201080025868.7A patent/CN102460658B/zh active Active
- 2010-05-28 WO PCT/JP2010/003583 patent/WO2010140323A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286208A (ja) * | 1999-03-31 | 2000-10-13 | Nec Corp | 半導体製造装置 |
JP2002075896A (ja) * | 2000-08-25 | 2002-03-15 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP2002110684A (ja) * | 2000-09-27 | 2002-04-12 | Toshiba Corp | 半導体基板及びその製造方法 |
US20040102056A1 (en) * | 2000-10-25 | 2004-05-27 | Satoshi Tobe | Production method for silicon wafer and silicon wafer |
CN1940150A (zh) * | 2005-09-27 | 2007-04-04 | 东芝陶瓷株式会社 | 硅片的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20120013994A (ko) | 2012-02-15 |
WO2010140323A1 (ja) | 2010-12-09 |
US20120139088A1 (en) | 2012-06-07 |
CN102460658B (zh) | 2016-02-10 |
KR101381537B1 (ko) | 2014-04-04 |
US8999864B2 (en) | 2015-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI410539B (zh) | 矽晶圓,其製造方法及其熱處理之方法 | |
CN101638807B (zh) | 硅晶片、硅晶片的制造方法及硅晶片的热处理方法 | |
EP2722423B1 (en) | Method of manufacturing a silicon wafer | |
KR101340003B1 (ko) | 실리콘 웨이퍼의 제조방법 및 이에 의해 제조된 실리콘 웨이퍼 | |
CN101187058B (zh) | 硅半导体晶片及其制造方法 | |
EP1926134B1 (en) | Method for manufacturing silicon epitaxial wafers | |
CN1697130A (zh) | 硅晶片以及用于制造硅晶片的方法 | |
CN102396055A (zh) | 退火晶片、退火晶片的制造方法以及器件的制造方法 | |
CN102473614B (zh) | 硅晶片的热处理方法 | |
CN102460658A (zh) | 硅晶片及硅晶片的热处理方法 | |
EP0973190A2 (en) | Silicon wafer and method for producing it | |
JP5590644B2 (ja) | シリコンウェーハの熱処理方法 | |
EP1052313B1 (en) | Silicon wafer and method of manufacture thereof | |
JP5396737B2 (ja) | エピタキシャルシリコンウェーハ及びその製造方法 | |
JP5512137B2 (ja) | シリコンウェーハの熱処理方法 | |
JP5569392B2 (ja) | シリコンウェーハの製造方法 | |
JP5583053B2 (ja) | シリコンウェーハの熱処理方法 | |
CN101792927A (zh) | 热处理硅晶片的方法 | |
KR101658892B1 (ko) | 웨이퍼의 열처리 방법 및 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼 및 열처리 장치 | |
JP5531385B2 (ja) | 枚葉式熱処理装置のプロセスチャンバーの冷却方法 | |
JP2010228931A (ja) | シリコンウェーハおよびその製造方法 | |
JP2010177494A (ja) | シリコンウェーハの熱処理方法 | |
JP5441261B2 (ja) | シリコンウェーハの熱処理方法 | |
JP2010283076A (ja) | シリコンウェーハの熱処理方法 | |
JP2004319653A (ja) | シリコンウエハの熱処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: COVALENT SILICON CORPORATION Free format text: FORMER OWNER: COVALENT MATERIALS CORP. Effective date: 20130328 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Niigata Prefecture, Japan Applicant after: GLOBALWAFERS JAPAN Co.,Ltd. Address before: Niigata Prefecture, Japan Applicant before: Crystal silicon Limited by Share Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: COVALENT SILICON CORPORATION TO: GLOBALWAFERS CO., LTD. |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130328 Address after: Niigata Prefecture, Japan Applicant after: Crystal silicon Limited by Share Ltd. Address before: Tokyo, Japan Applicant before: Covalent Materials Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |