CN1520616A - 具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法 - Google Patents

具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法 Download PDF

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Publication number
CN1520616A
CN1520616A CNA028117026A CN02811702A CN1520616A CN 1520616 A CN1520616 A CN 1520616A CN A028117026 A CNA028117026 A CN A028117026A CN 02811702 A CN02811702 A CN 02811702A CN 1520616 A CN1520616 A CN 1520616A
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China
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region
conductivity type
base
transition region
regions
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Pending
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CNA028117026A
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English (en)
Chinese (zh)
Inventor
Bj
B·J·巴利加
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SILICON SEMICONDUCTOR CORP.
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SILICON SEMICONDUCTOR CORP.
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Priority claimed from US09/833,132 external-priority patent/US6781194B2/en
Application filed by SILICON SEMICONDUCTOR CORP. filed Critical SILICON SEMICONDUCTOR CORP.
Publication of CN1520616A publication Critical patent/CN1520616A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
CNA028117026A 2001-04-11 2002-04-05 具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法 Pending CN1520616A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/833,132 US6781194B2 (en) 2001-04-11 2001-04-11 Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US09/833,132 2001-04-11
US10/008,171 2001-10-19
US10/008,171 US6791143B2 (en) 2001-04-11 2001-10-19 Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through

Publications (1)

Publication Number Publication Date
CN1520616A true CN1520616A (zh) 2004-08-11

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Country Status (5)

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US (2) US6800897B2 (enExample)
EP (1) EP1396030B1 (enExample)
JP (1) JP4198469B2 (enExample)
CN (1) CN1520616A (enExample)
WO (1) WO2002084745A2 (enExample)

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CN1909200B (zh) * 2005-08-01 2010-06-30 半导体元件工业有限责任公司 具有改善的开态电阻和击穿电压性能的半导体结构
CN103238207A (zh) * 2010-11-23 2013-08-07 密克罗奇普技术公司 使用低压外延硅以实现低漏极源极导通电阻(rdson)的场效晶体管
CN103681850A (zh) * 2012-09-13 2014-03-26 台湾积体电路制造股份有限公司 功率mosfet及其形成方法
CN104078517A (zh) * 2014-07-22 2014-10-01 苏州硅能半导体科技股份有限公司 沟槽式肖特基半导体器件
CN104241363A (zh) * 2013-06-21 2014-12-24 竹懋科技股份有限公司 沟渠式mos整流元件及其制造方法
CN104934473A (zh) * 2014-03-17 2015-09-23 株式会社东芝 半导体装置
CN105655390A (zh) * 2009-10-20 2016-06-08 维西埃-硅化物公司 分栅式场效应晶体管
CN105723516A (zh) * 2013-10-21 2016-06-29 维西埃-硅化物公司 采用高能量掺杂剂注入技术的半导体结构
CN106505106A (zh) * 2016-10-11 2017-03-15 东南大学 一种高雪崩耐量的屏蔽栅功率晶体管及其制备方法
CN107170672A (zh) * 2017-05-18 2017-09-15 上海先进半导体制造股份有限公司 Vdmos的栅氧生长方法
CN108346579A (zh) * 2013-08-09 2018-07-31 英飞凌科技股份有限公司 具有单元沟槽结构和接触点的半导体器件及其制造方法
CN115224128A (zh) * 2022-01-21 2022-10-21 北京大学 一种金属氧化物半导体场效应晶体管及其制造方法
CN117269711A (zh) * 2023-11-20 2023-12-22 江苏摩派半导体有限公司 Igbt模块性能测试方法及系统

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