CN1294415A - 垂直mos晶体管 - Google Patents
垂直mos晶体管 Download PDFInfo
- Publication number
- CN1294415A CN1294415A CN00135316A CN00135316A CN1294415A CN 1294415 A CN1294415 A CN 1294415A CN 00135316 A CN00135316 A CN 00135316A CN 00135316 A CN00135316 A CN 00135316A CN 1294415 A CN1294415 A CN 1294415A
- Authority
- CN
- China
- Prior art keywords
- conduction type
- source region
- polysilicon
- high concentration
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 13
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims description 82
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005286 illumination Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract description 11
- 238000007254 oxidation reaction Methods 0.000 abstract description 11
- 210000000746 body region Anatomy 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 29
- 230000007797 corrosion Effects 0.000 description 29
- 238000009792 diffusion process Methods 0.000 description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0869—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Abstract
Description
Claims (19)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP295838/1999 | 1999-10-18 | ||
JP29583899 | 1999-10-18 | ||
JP313770/2000 | 2000-10-13 | ||
JP2000313770A JP4091242B2 (ja) | 1999-10-18 | 2000-10-13 | 縦形mosトランジスタ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1294415A true CN1294415A (zh) | 2001-05-09 |
CN1197168C CN1197168C (zh) | 2005-04-13 |
Family
ID=26560429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001353160A Expired - Fee Related CN1197168C (zh) | 1999-10-18 | 2000-10-18 | 垂直mos晶体管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6624469B1 (zh) |
JP (1) | JP4091242B2 (zh) |
CN (1) | CN1197168C (zh) |
Cited By (14)
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CN1326218C (zh) * | 2003-03-03 | 2007-07-11 | 株式会社电装 | 具有沟槽栅结构的半导体器件及其制造方法 |
CN100392812C (zh) * | 2005-08-15 | 2008-06-04 | 力晶半导体股份有限公司 | 形成埋入式掺杂区的方法 |
CN100395876C (zh) * | 2003-09-16 | 2008-06-18 | 茂德科技股份有限公司 | 功率金属氧化物半导体场效应晶体管的制造方法 |
CN100416856C (zh) * | 2003-12-24 | 2008-09-03 | 上海华虹Nec电子有限公司 | 大功率mos晶体管的制造方法 |
CN100433366C (zh) * | 2002-03-22 | 2008-11-12 | 西利康尼克斯股份有限公司 | 沟槽形栅极的mis器件的结构和制造方法 |
CN100435352C (zh) * | 2002-12-09 | 2008-11-19 | 半导体元件工业有限责任公司 | 垂直mos功率晶体 |
CN102386233A (zh) * | 2010-08-30 | 2012-03-21 | 精工电子有限公司 | 半导体器件 |
CN103295910A (zh) * | 2012-02-28 | 2013-09-11 | 精工电子有限公司 | 半导体装置及其制造方法 |
CN104300010A (zh) * | 2013-07-18 | 2015-01-21 | 万国半导体股份有限公司 | 常态导通高压开关 |
CN104769723A (zh) * | 2014-12-04 | 2015-07-08 | 冯淑华 | 沟槽栅功率半导体场效应晶体管 |
CN104835740A (zh) * | 2014-02-11 | 2015-08-12 | 北大方正集团有限公司 | 沟槽型功率器件的制造方法 |
CN106206278A (zh) * | 2015-05-27 | 2016-12-07 | 丰田自动车株式会社 | 绝缘栅型开关元件制造方法 |
CN108511515A (zh) * | 2018-04-03 | 2018-09-07 | 广州安海半导体股份有限公司 | 一种调节场效应晶体管沟道长度的新方法及其制造工艺 |
CN110176395A (zh) * | 2019-06-13 | 2019-08-27 | 深圳市锐骏半导体股份有限公司 | 一种降低浮动误差的vdmos器件制作方法 |
Families Citing this family (32)
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US6781195B2 (en) * | 2001-01-23 | 2004-08-24 | Semiconductor Components Industries, L.L.C. | Semiconductor bidirectional switching device and method |
DE10214175B4 (de) * | 2002-03-28 | 2006-06-29 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6930004B2 (en) * | 2003-08-13 | 2005-08-16 | International Business Machines Corporation | Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling |
EP1536463A1 (en) * | 2003-11-28 | 2005-06-01 | STMicroelectronics S.r.l. | Method for manufacturing a power device with insulated trench-gate having controlled channel length and corresponding device |
JP4829473B2 (ja) * | 2004-01-21 | 2011-12-07 | オンセミコンダクター・トレーディング・リミテッド | 絶縁ゲート型半導体装置およびその製造方法 |
US7372088B2 (en) * | 2004-01-27 | 2008-05-13 | Matsushita Electric Industrial Co., Ltd. | Vertical gate semiconductor device and method for fabricating the same |
JP4091921B2 (ja) * | 2004-02-16 | 2008-05-28 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
KR100587090B1 (ko) | 2005-03-15 | 2006-06-08 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 제조방법 |
US7297603B2 (en) * | 2005-03-31 | 2007-11-20 | Semiconductor Components Industries, L.L.C. | Bi-directional transistor and method therefor |
DE112006001516T5 (de) | 2005-06-10 | 2008-04-17 | Fairchild Semiconductor Corp. | Feldeffekttransistor mit Ladungsgleichgewicht |
DE102006045126B4 (de) * | 2005-09-26 | 2012-02-09 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer Anschlusselektrode für zwei übereinander angeordnete Halbleiterzonen |
DE102005056426B4 (de) * | 2005-11-28 | 2012-03-15 | Infineon Technologies Austria Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
WO2007100803A1 (en) * | 2006-02-23 | 2007-09-07 | Vishay-Siliconix | Process for forming a short channel trench mosfet and device |
US7537970B2 (en) * | 2006-03-06 | 2009-05-26 | Semiconductor Components Industries, L.L.C. | Bi-directional transistor with by-pass path and method therefor |
US7282406B2 (en) * | 2006-03-06 | 2007-10-16 | Semiconductor Companents Industries, L.L.C. | Method of forming an MOS transistor and structure therefor |
KR100780658B1 (ko) * | 2006-12-27 | 2007-11-30 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100811275B1 (ko) * | 2006-12-28 | 2008-03-07 | 주식회사 하이닉스반도체 | 벌브 타입의 리세스 채널을 갖는 반도체소자의 제조방법 |
KR100800495B1 (ko) * | 2007-02-27 | 2008-02-04 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
JP4544360B2 (ja) * | 2008-10-24 | 2010-09-15 | トヨタ自動車株式会社 | Igbtの製造方法 |
JP4862878B2 (ja) | 2008-10-30 | 2012-01-25 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
KR101094372B1 (ko) | 2009-06-30 | 2011-12-15 | 주식회사 하이닉스반도체 | 매립게이트를 구비한 반도체장치 제조 방법 |
KR101662282B1 (ko) * | 2010-01-14 | 2016-10-05 | 삼성전자주식회사 | 고유전율의 보호막 패턴을 포함하는 매립 게이트 패턴을 갖는 반도체 장치 및 이의 제조 방법 |
JP5729331B2 (ja) * | 2011-04-12 | 2015-06-03 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
JP6031681B2 (ja) | 2011-04-20 | 2016-11-24 | パナソニックIpマネジメント株式会社 | 縦型ゲート半導体装置およびその製造方法 |
JP6270799B2 (ja) * | 2011-05-16 | 2018-01-31 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6290526B2 (ja) | 2011-08-24 | 2018-03-07 | ローム株式会社 | 半導体装置およびその製造方法 |
JP6524279B2 (ja) * | 2011-08-24 | 2019-06-05 | ローム株式会社 | 半導体装置およびその製造方法 |
KR101779384B1 (ko) * | 2013-03-05 | 2017-09-19 | 매그나칩 반도체 유한회사 | 반도체소자 제조방법 |
JP6511034B2 (ja) * | 2016-11-17 | 2019-05-08 | 株式会社豊田中央研究所 | 炭化珪素半導体装置の製造方法 |
CN107221502A (zh) * | 2017-05-25 | 2017-09-29 | 电子科技大学 | 一种沟槽栅dmos的制作方法 |
JP2019175930A (ja) * | 2018-03-27 | 2019-10-10 | エイブリック株式会社 | 半導体装置及びその製造方法 |
CN111969036B (zh) * | 2020-07-14 | 2022-09-13 | 西安电子科技大学 | 一种提高uis耐性的vdmosfet器件及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
FR2513016A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Transistor v mos haute tension, et son procede de fabrication |
JPH03142971A (ja) * | 1989-10-30 | 1991-06-18 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
GB9512089D0 (en) * | 1995-06-14 | 1995-08-09 | Evans Jonathan L | Semiconductor device fabrication |
JP3528420B2 (ja) * | 1996-04-26 | 2004-05-17 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP3164030B2 (ja) * | 1997-09-19 | 2001-05-08 | 日本電気株式会社 | 縦型電界効果トランジスタの製造方法 |
JP3281847B2 (ja) * | 1997-09-26 | 2002-05-13 | 三洋電機株式会社 | 半導体装置の製造方法 |
JPH11251592A (ja) * | 1998-01-05 | 1999-09-07 | Denso Corp | 炭化珪素半導体装置 |
JPH11354780A (ja) * | 1998-06-03 | 1999-12-24 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
-
2000
- 2000-10-13 JP JP2000313770A patent/JP4091242B2/ja not_active Expired - Fee Related
- 2000-10-17 US US09/690,226 patent/US6624469B1/en not_active Expired - Lifetime
- 2000-10-18 CN CNB001353160A patent/CN1197168C/zh not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100433366C (zh) * | 2002-03-22 | 2008-11-12 | 西利康尼克斯股份有限公司 | 沟槽形栅极的mis器件的结构和制造方法 |
CN100435352C (zh) * | 2002-12-09 | 2008-11-19 | 半导体元件工业有限责任公司 | 垂直mos功率晶体 |
CN1326218C (zh) * | 2003-03-03 | 2007-07-11 | 株式会社电装 | 具有沟槽栅结构的半导体器件及其制造方法 |
CN100395876C (zh) * | 2003-09-16 | 2008-06-18 | 茂德科技股份有限公司 | 功率金属氧化物半导体场效应晶体管的制造方法 |
CN100416856C (zh) * | 2003-12-24 | 2008-09-03 | 上海华虹Nec电子有限公司 | 大功率mos晶体管的制造方法 |
CN100392812C (zh) * | 2005-08-15 | 2008-06-04 | 力晶半导体股份有限公司 | 形成埋入式掺杂区的方法 |
CN102386233B (zh) * | 2010-08-30 | 2015-11-11 | 精工电子有限公司 | 半导体器件 |
CN102386233A (zh) * | 2010-08-30 | 2012-03-21 | 精工电子有限公司 | 半导体器件 |
CN103295910A (zh) * | 2012-02-28 | 2013-09-11 | 精工电子有限公司 | 半导体装置及其制造方法 |
CN103295910B (zh) * | 2012-02-28 | 2017-04-12 | 精工半导体有限公司 | 半导体装置及其制造方法 |
CN104300010A (zh) * | 2013-07-18 | 2015-01-21 | 万国半导体股份有限公司 | 常态导通高压开关 |
CN104300010B (zh) * | 2013-07-18 | 2017-05-03 | 万国半导体股份有限公司 | 常态导通高压开关 |
CN104835740A (zh) * | 2014-02-11 | 2015-08-12 | 北大方正集团有限公司 | 沟槽型功率器件的制造方法 |
CN104769723A (zh) * | 2014-12-04 | 2015-07-08 | 冯淑华 | 沟槽栅功率半导体场效应晶体管 |
CN106206278A (zh) * | 2015-05-27 | 2016-12-07 | 丰田自动车株式会社 | 绝缘栅型开关元件制造方法 |
CN108511515A (zh) * | 2018-04-03 | 2018-09-07 | 广州安海半导体股份有限公司 | 一种调节场效应晶体管沟道长度的新方法及其制造工艺 |
CN110176395A (zh) * | 2019-06-13 | 2019-08-27 | 深圳市锐骏半导体股份有限公司 | 一种降低浮动误差的vdmos器件制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US6624469B1 (en) | 2003-09-23 |
JP4091242B2 (ja) | 2008-05-28 |
JP2001189456A (ja) | 2001-07-10 |
CN1197168C (zh) | 2005-04-13 |
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