CN108511515A - 一种调节场效应晶体管沟道长度的新方法及其制造工艺 - Google Patents

一种调节场效应晶体管沟道长度的新方法及其制造工艺 Download PDF

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CN108511515A
CN108511515A CN201810288960.0A CN201810288960A CN108511515A CN 108511515 A CN108511515 A CN 108511515A CN 201810288960 A CN201810288960 A CN 201810288960A CN 108511515 A CN108511515 A CN 108511515A
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张帅
黄昕
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Jinan Anhai Semiconductor Co Ltd
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Abstract

本发明公开了一种调节场效应晶体管沟道长度的新方法及其制造工艺，该方法利用沟槽设计出不同的离子注入的角度，形成的沟道区域的角度不同，得到不同深度的沟道，从而调节沟道长度；为了在调节沟道长度的同时不影响基区电阻，场效应晶体管利用沟槽作为阻挡，通过调节注入角度形成不同的沟道长度，同时通过调节contact的P型杂质来降低基区电阻且不影响沟道区。本发明制造工艺中注入的剂量可以根据阈值电压的需求并结合导通电阻进行协调，为了降低基区电阻，在contact刻蚀完成后紧接着注入P型杂质，利用横向扩散与沟道区连接，为了降低基区电阻，此P型杂质的浓度会更浓，但是由于离沟道较远，所以对阈值电压的影响很小。

Description

一种调节场效应晶体管沟道长度的新方法及其制造工艺
技术领域
本发明属于功率半导体器件技术领域，具体的说是涉及一种调节场效应晶体管沟道长度的新方法及其制造工艺。
背景技术
随着电子信息技术的迅速发展，特别是像时尚消费电子和便携式产品的快速发展，金属氧化物半导体场效应晶体管(MOSFET)等功率器件的需求量越来越大，MOSFET主要分为横向和纵向两种，横向MOSFET的明显优势是其较好的集成性，可以更容易的集成到现有技术的工艺平台上，但由于其耐压的漂移区在表面展开，从而显示出了其最大的不足，而且占用的面积较大，面积代表成本，耐压越高的器件，劣势越明显，而纵向MOSFET很好的避免了这一问题，因此，超高压的分立器件仍然以纵向为主。
如果优化器件结构和工艺制造来降低器件的导通电阻一直是器件设计的重要方向之一，对于不同电压域功率器件，沟道区电阻所占比例有所不同，电压越低，沟道电阻所占比例越大，对于中低压器件，沟道工程至关重要。以说明书附图的图1中所示的常规NMOS为例，沟道电阻跟P-body的掺杂浓度和深度有直接关系，从沟道导通电阻的角度，希望P-body的浓度越浓越好，深度越浅越好，但是P-body的工艺参数是MOS器件的关键，不仅对沟道电阻起到决定性作用，还影响了器件的阈值电压Vth以及寄生BJT的基区电阻Rb，基区电阻Rb的大小决定了器件的安全工作区SOA，理论上希望基区电阻Rb越小越好，即P-body浓度越浓越好，深度越深越好，但是过浓的P-body会导致阈值电压过大，导通电流过小，进而影响工作效率。
如说明书附图中的图3所示，P-body的注入角度太大，多晶硅栅底部承担电压会太大，容易发生栅氧击穿；或者如说明书附图的图4中所示，P-body的注入角度太小，容易造成开启困难，阈值电压过高，电流效率太低；因此P-body的浓度对这三个参数而言需要找到一个平衡，而这往往非常困难。
发明内容
本发明为了克服现有技术存在的不足，在调节沟道长度的同时不影响基区电阻，提供一种调节场效应晶体管沟道长度的新方法及其制造工艺。
本发明是通过以下技术方案实现的：一种调节场效应晶体管沟道长度的新方法，该方法利用沟槽设计出不同的离子注入的角度，形成的沟道区域的角度不同，得到不同深度的沟道，从而调节沟道长度；为了在调节沟道长度的同时不影响基区电阻，场效应晶体管利用沟槽作为阻挡，通过调节注入角度形成不同的沟道长度，同时通过调节contact的P型杂质来降低基区电阻且不影响沟道区。
本发明调节场效应晶体管沟道长度的新方法设计出一种带有辅助耗尽的P型柱结构的沟槽形场效应晶体管。
本发明还公开了一种调节场效应晶体管沟道长度的新方法中场效应晶体管沟槽的制造工艺，该制造工艺具体包括如下步骤：
（1）Trench刻蚀：利用氮化硅作为掩模版，刻出栅槽，然后高温退火修复刻蚀带来的缺陷；
（2）分立栅Poly-1：在刻好的槽内生长或者淀积一定厚度的氧化层，根据电压应用不同，氧化层的厚度控制在0.1um～0.8um，然后淀积带掺杂的多晶硅poly，刻蚀栅氧区域的poly，低温氧化形成分立栅与多晶硅栅之间的氧化层；
（3）P-body注入：首先生长一层100A～300A的氧化层作为杂质注入的阻挡层，然后将沟槽作为掩模版，通过控制杂质注入与侧壁的角度来调节沟道长度，控制杂质剂量来调节沟道区浓度进而调节阈值电压；
（4）多晶硅栅Poly-2：湿法去除步骤（3）中生长的牺牲氧化层，然后生长栅氧化层，接着淀积带掺杂的多晶硅poly形成器件的栅极；
（5）N+注入：在cell区进行N+杂质注入，形成器件的源极；
（6）ILD及Contact：完成N+注入后，淀积一定厚度的氧化层，然后在source区刻蚀contact孔；
（7）P+注入：在刻好contact孔的wafer表面注入P型杂质形成器件的体区，P的杂质的浓度要与击穿电压相对应，过浓的P型杂质容易过早击穿，为了调节击穿电压，P+注入采用多次注入的方式来形成想要的杂质分布；
（8）Metal：淀积metal互连线，再淀积氧化层，最后在需要引出封装的地方开孔用作PAD。
本发明的有益效果是：为了在调节沟道长度的同时不影响基区电阻，本发明提出了一种创新做法，该创新做法是利用沟槽作为阻挡，通过调节注入角度形成不同的沟道长度，同时通过调节contact的P型杂质来降低基区电阻却不影响沟道区。本发明属于一种工艺创新，利用沟槽设计出不同的离子注入的角度，形成沟道区域的角度不同，可以得到不同深度的沟道长度。
本发明制造工艺的特点在于：注入的剂量可以根据阈值电压的需求并结合导通电阻进行协调，而能量很小，只注入较浅区域，为了降低基区电阻，在contact刻蚀完成后紧接着注入P型杂质，利用横向扩散与沟道区连接，为了降低基区电阻，此P型杂质的浓度会更浓，但是由于离沟道较远，所以对阈值电压的影响却很小。这种做法就可以很好的做到在阈值电压和沟道长度可调的情况下尽可能的降低基区电阻来抑制寄生BJT被触发。
附图说明
图1是传统分立栅器件的结构示意图；
图2是本发明沟槽型场效应晶体管的结构示意图；
图3是本发明沟槽型场效应晶体管P-body注入角度太大时的结构示意图；
图4是本发明沟槽型场效应晶体管P-body注入角度太小时的结构示意图；
图5是制作本发明沟槽型场效应晶体管的工艺流程示意图。
具体实施方式
以下结合附图和具体实施方式对本发明作详细描述。
如图2所示，一种调节场效应晶体管沟道长度的新方法，该方法利用沟槽设计出不同的离子注入的角度，形成的沟道区域的角度不同，得到不同深度的沟道，从而调节沟道长度；为了在调节沟道长度的同时不影响基区电阻，场效应晶体管利用沟槽作为阻挡，通过调节注入角度形成不同的沟道长度，同时通过调节contact的P型杂质来降低基区电阻且不影响沟道区。本发明调节场效应晶体管沟道长度的新方法设计出一种带有辅助耗尽的P型柱结构的沟槽形场效应晶体管。
如图5所示，本发明还公开了一种调节场效应晶体管沟道长度的新方法中场效应晶体管沟槽的制造工艺，该制造工艺具体包括如下步骤：
（1）Trench刻蚀：利用氮化硅作为掩模版，刻出栅槽，然后高温退火修复刻蚀带来的缺陷；
（2）分立栅Poly-1：在刻好的槽内生长或者淀积一定厚度的氧化层，根据电压应用不同，氧化层的厚度控制在0.1um～0.8um，然后淀积带掺杂的多晶硅poly，刻蚀栅氧区域的poly，低温氧化形成分立栅与多晶硅栅之间的氧化层；
（3）P-body注入：首先生长一层100A～300A的氧化层作为杂质注入的阻挡层，然后将沟槽作为掩模版，通过控制杂质注入与侧壁的角度来调节沟道长度，控制杂质剂量来调节沟道区浓度进而调节阈值电压；
（4）多晶硅栅Poly-2：湿法去除步骤（3）中生长的牺牲氧化层，然后生长栅氧化层，接着淀积带掺杂的多晶硅poly形成器件的栅极；
（5）N+注入：在cell区进行N+杂质注入，形成器件的源极；
（6）ILD及Contact：完成N+注入后，淀积一定厚度的氧化层，然后在source区刻蚀contact孔；
（7）P+注入：在刻好contact孔的wafer表面注入P型杂质形成器件的体区，P的杂质的浓度要与击穿电压相对应，过浓的P型杂质容易过早击穿，为了调节击穿电压，P+注入采用多次注入的方式来形成想要的杂质分布；
（8）Metal：淀积metal互连线，再淀积氧化层，最后在需要引出封装的地方开孔用作PAD。
最后应当说明的是，以上内容仅用以说明本发明的技术方案，而非对本发明保护范围的限制，本领域的普通技术人员对本发明的技术方案进行的简单修改或者等同替换，均不脱离本发明技术方案的实质和范围。

Claims (3)

1.一种调节场效应晶体管沟道长度的新方法，其特征在于：所述调节场效应晶体管沟道长度的新方法利用沟槽设计出不同的离子注入的角度，形成的沟道区域的角度不同，得到不同深度的沟道，从而调节沟道长度；为了在调节沟道长度的同时不影响基区电阻，场效应晶体管利用沟槽作为阻挡，通过调节注入角度形成不同的沟道长度，同时通过调节contact的P型杂质来降低基区电阻且不影响沟道区。
2.根据权利要求1所述的一种调节场效应晶体管沟道长度的新方法，其特征在于：所述调节场效应晶体管沟道长度的新方法设计出一种带有辅助耗尽的P型柱结构的沟槽形场效应晶体管。
3.一种根据权利要求1或2所述的调节场效应晶体管沟道长度的新方法中场效应晶体管沟槽的制造工艺，其特征在于：所述沟槽的制造工艺具体包括如下步骤：
（1）Trench刻蚀：利用氮化硅作为掩模版，刻出栅槽，然后高温退火修复刻蚀带来的缺陷；
（2）分立栅Poly-1：在刻好的槽内生长或者淀积一定厚度的氧化层，根据电压应用不同，氧化层的厚度控制在0.1um～0.8um，然后淀积带掺杂的多晶硅poly，刻蚀栅氧区域的poly，低温氧化形成分立栅与多晶硅栅之间的氧化层；
（3）P-body注入：首先生长一层100A～300A的氧化层作为杂质注入的阻挡层，然后将沟槽作为掩模版，通过控制杂质注入与侧壁的角度来调节沟道长度，控制杂质剂量来调节沟道区浓度进而调节阈值电压；
（4）多晶硅栅Poly-2：湿法去除步骤（3）中生长的牺牲氧化层，然后生长栅氧化层，接着淀积带掺杂的多晶硅poly形成器件的栅极；
（5）N+注入：在cell区进行N+杂质注入，形成器件的源极；
（6）ILD及Contact：完成N+注入后，淀积一定厚度的氧化层，然后在source区刻蚀contact孔；
（7）P+注入：在刻好contact孔的wafer表面注入P型杂质形成器件的体区，P的杂质的浓度要与击穿电压相对应，过浓的P型杂质容易过早击穿，为了调节击穿电压，P+注入采用多次注入的方式来形成想要的杂质分布；
（8）Metal：淀积metal互连线，再淀积氧化层，最后在需要引出封装的地方开孔用作PAD。
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