CN1284880C - 反应器壁上的金刚石涂层及其制造方法 - Google Patents
反应器壁上的金刚石涂层及其制造方法 Download PDFInfo
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Abstract
半导体工艺设备如等离子体腔的一种包括一个含金刚石的表面的抗腐蚀部件,及其制造方法。
Description
发明背景
1.发明领域
本发明涉及半导体工艺设备以及提高这些部件抗腐蚀性的方法。
2.相关技术描述
在半导体工艺领域中,通常使用真空工艺腔来在衬底上进行材料的刻蚀和化学气相沉积(CVD),将刻蚀或者沉积气体供入真空腔中,并对气体施加一种RF场将气体激发到等离子体状态。在专利号为4340462,4948458,5200232和5820723的共同所有的US专利中公开了平行板式变压耦合等离子体(TCPTM),也叫做电感耦合等离子体(ICP),和电子回旋共振(ECR)反应器及其部件的例子。由于这些反应器中等离子体环境的腐蚀性以及极小化颗粒和/或重金属污染的需要,高度希望这些设备的部件呈现出高的抗腐蚀性。
在半导体衬底的处理过程中,衬底一般用衬底夹具例如机械钳和静电钳(ESC)固定在真空腔中。这些钳制系统及其部件的例子可以在专利号为5262029和5838529的共同所有的US专利中找到。处理气体可以通过许多方式供入腔室中,比如通过气体喷嘴,导气环,气体分布板等。在专利号为5863376的共同所有的US专利中可以找到一种用于电感耦合等离子体反应器的温控气体分布板及其部件的例子。除了等离子体腔室设备,在半导体衬底处理过程中使用的其它设备包括传送机构,气体供应系统,衬里,起落机构,加载锁,室门机构,机械臂,紧固件及其它类似的设备。这些设备的部件要承受多种与半导体工艺相关的腐蚀条件。而且,考虑到半导体衬底处理对高纯度的需要,如硅晶片及介电材料如用于平板显示的玻璃衬底,高度希望在这些环境中的部件具有改善了的抗腐蚀性。
通常地,将铝和铝合金用于等离子体反应器的器壁,电极,衬底支撑,紧固件及其它的部件。为了防止这些金属部件的腐蚀,已提出了在铝表面用各种涂层进行涂覆的多种技术。例如,在专利号为5641375的US专利中公开了进行了阳极化处理的铝腔室壁,减少了等离子体对腔壁的侵蚀和磨损。专利’375指出,阳极化层最终会被溅射掉或刻蚀掉,腔室必须进行更换。专利号为5895586的US专利指出可以在序列号为62-103379的日本申请公开中找到一种技术,来在铝材料上制备Al2O3,AlC,TiN,TiC,AlN或者其它类似的抗侵蚀膜。
专利号为5680013的US专利指出,在专利号为4491496的US专利中公开了一种在刻蚀腔室的金属表面火焰喷镀Al2O3的技术。专利’013指出铝和陶瓷涂层如氧化铝间的热膨胀系数的不同会导致涂层因热循环而开裂,涂层最终在腐蚀环境下失效。为保护腔壁,专利号为5366585,5798016和5885356的US专利提出了衬里配置。例如,专利’016公开了一种因其易加工性而优选的与铝共用的由陶瓷,铝,钢和/或石英组成的衬里,并涂覆一个氧化铝,Sc2O3或者Y2O3涂层来为铝针对等离子体提供保护,优选的是Al2O3。专利’585公开了一种独立式陶瓷衬里,厚度至少为0.005英寸,由固体氧化铝加工而成。专利’585提到通过火焰喷镀或者等离子体喷镀氧化铝,也能提供不用消耗下面的铝即可沉积的陶瓷层。专利’356公开了用于晶片基座的一种氧化铝陶瓷衬里和一种氮化铝陶瓷屏蔽。专利号为5885356的US专利公开了在CVD腔室内可用的陶瓷衬里材料。
对于半导体工艺设备的金属部件已提出了多种涂层。例如,专利号为5879523的US专利公开了一种溅射腔,其中在诸如不锈钢或者铝的金属上应用了一种热喷镀Al2O3涂层,并且二者之间有一个可选的含NiAlx键合的涂层。专利号为5522932和5891253的US专利公开了一种用在衬底等离子体处理设备的金属部件上的铑涂层,二者之间有一个可选的镍涂层。专利号为5680013的US专利公开了一种在等离子体工艺腔室中保护金属表面的非键合陶瓷,优选的陶瓷材料是烧结AlN,其次优选的材料包括氧化铝,氟化镁和氧化镁。专利号为5904778的US专利公开了一种在独立式SiC上的SiC CVD涂层,可用作腔室壁,腔室顶或者围绕晶片的套环。
对于等离子体反应器的部件,如莲蓬式喷头气体分布系统,已有针对莲蓬式喷头材料的许多提议。例如,专利号为5569356的共同所有的US专利公开了一种由硅,石墨或者碳化硅制成的莲蓬式喷头。专利号为5494713的US专利指出,可在铝电极上制备一种防蚀钝化铝膜,并在该钝化膜上加覆一个硅涂层膜,如氧化硅或者氮化硅。专利’713指出,由于铝涂层膜,防蚀钝化铝涂层膜和硅涂层膜具有不同的线膨胀系数,硅涂层膜的厚度应为10μm或者以下,优选的为5μm,硅涂层膜太厚时容易产生裂纹。然而,厚度低于5μm,由于对铝衬底的保护不充分,因而是不可取的。专利号为4534816的US专利公开了一种不锈钢,铝,铜及其它类似材料制成的上部莲蓬式喷头电极。专利号为4612077的US专利公开了一种镁制成的莲蓬式喷头电极。专利号为5888907的US专利公开了一种无定形碳,SiC或者Al制成的莲蓬式喷头电极。专利号为5006220和5022979的US专利公开了一种莲蓬式喷头电极,要么完全由SiC制成,要么是将通过CVD沉积的SiC涂覆在碳基体上,提供一个高纯SiC的表面层。
专利号为5952060的US专利描述了碳基涂层的使用,来对衬底处理系统的内部腔室进行保护。碳基涂层是金刚石或者类金刚石的碳涂层,其厚度在大约1μm到50μm之间。专利号为5812362的US专利描述了在静电卡盘上的金刚石膜的使用,其中金刚石膜的厚度在5到50μm之间。这些专利的每一个都公开了极薄的金刚石和类金刚石涂层的选择使用。
其它的专利,比如专利号为5308661,5393572,5846613,5989511和6015597的US专利也公开了金刚石或者类金刚石涂层。这些专利都没有描述这些涂层在等离子体反应器中的使用。
考虑到半导体工艺设备部件对高纯度和抗腐蚀性的需求,在该领域内,对用于这些部件的材料和/或涂层需要进行改善。而且,对于腔室材料来讲,能够提高等离子体反应器腔室的使用寿命,从而减少设备的停机时间的任何材料将有利于降低半导体晶片处理的成本。
发明简述
本发明的第一个方面,提供一种方法,该方法可以在半导体工艺设备部件表面提供一种抗侵蚀的含金刚石或类金刚石的涂层。该方法包括在半导体工艺设备部件表面沉积一种含金刚石或类金刚石的涂层,以形成一个抗侵蚀的外表面。抗侵蚀表面,意味着表面涂层抵抗等离子体腔室气体对涂层的刻蚀时,保护下面的材料免于等离子体腔室气体的腐蚀作用。下面的被涂覆的工艺设备部件的表面可包含一种金属,陶瓷或者聚合物材料,一种优选的材料是阳极化铝。
在一个优选的实施方案中,在半导体工艺设备的表面和含金刚石或类金刚石的涂层之间,可以使用一种或者多种中间金属,陶瓷或者聚合物涂层。用于等离子体腔室的可被涂覆的金属的表面包括阳极化铝或非阳极化铝,不锈钢,难熔金属如钼或其它金属或者合金。可被涂覆的陶瓷的表面包括氧化铝,SiC,AlN,Si3N4,BC或者其它与等离子体相容的陶瓷材料。可被涂覆的聚合物的表面包括含氟聚合物如Teflon,聚酰亚胺如Vespel和其它可在达200℃的温度下用于等离子体腔室的聚合物材料。
本发明的第二个方面,提供一种金属部件。该部件包括:(a)一个金属表面;(b)一个可选的在金属表面上的第一中间涂层;(c)一个可选的在第一中间涂层或者金属表面上的第二中间涂层;及一个在此部件上提供抗腐蚀的外表面的含金刚石或类金刚石的涂层。第一和第二中间涂层的每个可以是金属或其合金,陶瓷,聚合物或用于等离子体腔室反应器的材料的混合物或复合材料。
本发明的另一个方面,提供一种由含金刚石或类金刚石的材料制成的半导体工艺设备部件。该部件可以包括用于该设备的任意的一种或者多种涂层。
附图简述
结合附图对其优选的实施方案进行下面的详述将使本发明的目的和优势变得明显,附图中:
图1是等离子体反应器腔室的剖面示意图,其中含有一个根据本发明涂覆了一种抗腐蚀涂层的部件。
图2是图1中细节A中的抗腐蚀涂层的详细说明图。
本发明的优选实施方案详述
本发明通过利用一种抗侵蚀涂层,为给半导体工艺设备部件如等离子体工艺反应器腔室部件的金属,陶瓷和聚合物表面提供抗腐蚀性提供了一种有效的方法。这些部件包括腔室壁,衬底支撑,气体分布系统包括莲蓬式喷头,折流板,套环,喷嘴等,紧固件,加热元件,等离子体屏,衬里,传输模块部件,例如:机械臂,紧固件,内外腔室壁等,以及其它部件。
尽管本发明适用于任意类型的具有金属,陶瓷或者聚合物表面的部件,为了便于说明,结合参考在专利号为5820723的US专利中描述的设备来对本发明作更详细的描述,这里对整个专利作了参考。
图1示意的是一个真空工艺反应器腔室10,包括衬底支撑70,其为衬底60提供一个静电钳力,当用He背冷时也为衬底提供一个RF偏置。聚焦环72,在衬底上方限定了一个等离子体域。能量源,以在腔室中保持高密度(如1011-1012离子/cm3)的等离子体,例如由适宜的RF源驱动以提供高密度等离子体的天线40,放置在反应器腔室10的顶部。该腔室包括适宜的真空泵浦设备,通过在腔室底部的位于中心的真空接口20将腔室抽空,以使腔室的内部30保持在所希望的压力(例如低于50mTorr,一般的在1-20mTorr)。
在天线40和工艺腔室10的内部之间是一个基本上具有均一厚度的平面介电窗50,其在工艺腔室10的顶部构成真空壁。在窗50下面是一个气体分布板52,其上包含诸如圆孔的开口,以使处理气体从供气处传递到腔室10中。一个锥形的衬里54从气体分布板延伸出来并包围在衬底支撑70之上。
在操作中,将半导体衬底如硅晶片60放置在衬底支撑70上,典型地,当使用He背冷时,用一个静电钳74来固定。然后通过使处理气体穿过窗50和气体分布板52之间的间隙将处理气体供给到真空工艺腔室10中。在专利号为5824605,6048798和5863376的共同所有的US专利中公开了适用的气体分布板配置(如莲蓬式喷头),据此将这些公开资料作为参考。例如,尽管在图1中的窗口和气体分布板配置是平面的并有均一的厚度,对窗口和/或气体分布板而言,可以用非平面的和/或非均一厚度的几何形状。通过向天线40施加适宜的RF源,在衬底和窗口之间的空间里触发高密度的等离子体。
腔室壁28,比如阳极化或非阳极化的铝壁,和金属,陶瓷或者聚合物部件,比如衬底支撑70,紧固件56,衬里54等,暴露在等离子体中并表现出腐蚀征兆,根据本发明,选择将这些部件进行涂层,这样,在等离子体腔室的操作中就不需要把它们罩住。可被涂覆的金属和/或合金的例子包括阳极化或非阳极化铝及其合金,不锈钢,难熔金属如W和Mo及其合金,铜及其合金等。可被涂覆的陶瓷的表面的例子包括氧化铝,SiC,AlN,Si3N4,BC和TiO2。商业可获的可被涂覆的聚合物材料的例子包括含氟聚合物如Teflon,聚酰亚胺如Vespel和其它在达200℃的温度下可用于等离子腔室的聚合物材料。在一个优选的实施方案中,被涂覆的部件是具有一个阳极化或者非阳极化铝的表面29的腔室壁28。根据本发明,涂层允许使用铝合金而不用考虑它的组成(这样除了高纯铝外,还允许使用更经济的铝合金),晶粒结构或者表面条件。在下面的讨论中,被涂覆的部件的例子是一个铝腔室壁28,其具有一个可选的第一中间涂层80,一个可选的第二中间涂层90和一个含金刚石的涂层100,如图2中所示。
为了保证涂覆材料的好的粘附性,优选地,在涂覆之前,将铝衬底28表面彻底净化以除去表面物质,比如氧化物或者油脂。另外,特别希望的是,在应用任意所希望的涂层之前,将衬底表面粗化,阳极化衬底表面并对阳极化的衬底表面再次粗化。
根据本发明,可选地,通过一种传统技术将第一中间涂层80涂覆在铝侧壁28上。这种可选的第一中间涂层80是足够厚的,以粘附在衬底之上并进一步允许在制备可选的第二中间涂层90或者下面要提及的含金刚石的涂层之前对其进行处理。第一中间涂层80可以是任意适用的厚度,比如至少大约0.001英寸的厚度,优选的从大约0.001到大约0.25英寸,更优选的在0.001和0.1英寸之间,最优选的在从0.001英寸到0.05英寸。
在将可选的第一中间涂层80沉积到铝衬底28上之后,镀层可以用任意适用的技术来进行喷砂或者粗化,然后,用可选的第二涂层90或者含金刚石的涂层100来涂覆。粗化层80提供相当好的键合。所希望地,第二中间涂层90给涂层80带来高的机械压缩强度并在涂层90中减少裂缝的形成。
可选的第二中间涂层90是足够厚的,以粘附在第一中间涂层80上,并进一步允许在制备任意附加的中间涂层或者下述的含金刚石的外部涂层100之前对其进行处理。第二中间涂层90可以是任意适用的厚度,比如至少大约0.001英寸的厚度,优选的从大约0.001到大约0.25英寸,更优选的在0.001和0.1英寸之间,最优选的在0.001英寸和0.05英寸之间。
第一和第二中间涂层可以用在传统的等离子体工艺腔室中使用的任意一种或者多种材料制成。这些材料的例子包括金属,陶瓷和聚合物。尤其希望的金属包括任意一种或多种难熔金属,含这些金属的复合材料或合金。尤其希望的陶瓷包括Al2O3,SiC,Si3N4,BC,AlN,TiO2等。尤其希望的聚合物包括含氟聚合物如Teflon,聚酰亚胺如Vespel和其它的在达200℃的温度下可用于等离子体腔室的聚合物材料。预期的中间层的特殊材料还包括含富勒烯的材料;其它含碳的硬质材料如金刚石和类金刚石材料;例如铪,钽,钛和/或硅的碳化物,硼化物,氮化物和/或碳氮化物;碳化硼;氮化硼;碳氮化硼;氧化锆;氧化钇,或者任意上述材料的混合材料。
所希望地,可选的第一和第二中间涂层80和90可以是上述材料的任意一种,这样依赖所预想的性能,涂层可以是相同的或者不同的。也希望可以采用相同或者不同材料的附加中间层如第三,第四或者第五中间层。
含金刚石的涂层100沉积在可选的第二中间层90上,或者可选的第一中间层80上,或者铝衬底28上。含金刚石的涂层的所希望的厚度是至少0.001英寸;优选的从大约0.001到大约0.25英寸,更优选的从大约0.001到大约0.1英寸,最优选的在从0.001到0.05英寸。最希望地,金刚石或者类金刚石涂层的厚度应能为下面的层,尤其是衬底,在暴露于腐蚀性腔室气体的相当长的阶段提供侵蚀和/或腐蚀保护。较希望地,所有涂层的厚度等于或者大于0.001英寸,最希望的厚度在大约0.002到0.010英寸之间。含金刚石或者类金刚石的涂层100的厚度可选择以与在反应器中遇到的等离子体环境(如刻蚀,CVD等)相容。这种含金刚石的涂覆层可以将上述反应器腔室和部件整个涂覆,或者部分涂覆。
含金刚石的涂层,这里意味着一种其中含有金刚石或者类金刚石材料的涂层。类金刚石的材料是那些具有许多但不是全部的金刚石性能的碳基材料。这些材料包括无定形碳,硬质碳和α-碳。优选的类金刚石材料是硬度超过金刚石硬度的50%的非晶碳材料,优选的超过金刚石硬度的70%。所有这些金刚石或者类金刚石涂层,在下文中一并称为含金刚石的涂层。
考虑到所希望的厚度,最希望将含金刚石的涂层与其它保护性材料掺杂或者混合使用,这样,含金刚石的涂层就是金刚石或者类金刚石材料与其它保护性材料的复合材料。这些材料可以包括在传统的等离子体工艺腔室中采用的任意一种或者多种材料。这些材料的例子包括任意一种或多种金属,陶瓷或者聚合物。尤其希望的金属包括任意一种或多种难熔金属,含这些金属的复合材料或合金。尤其希望的陶瓷包括Al2O3,SiC,Si3N4,BC,AlN,TiO2等。尤其希望的聚合物包括含氟聚合物如Teflon,聚酰亚胺如Vespel和其它的在达200℃的温度下可用于等离子体腔室的聚合物材料。相信最希望的材料将包括单独存在的或者与例如铪,钽,钛和/或硅的碳化物,硼化物,氮化物和/或碳氮化物;碳化硼;氮化硼;碳氮化硼;氧化锆;氧化钇,或者上述材料的混合物一同存在的金刚石或者类金刚石材料。
如上所述,本发明的含金刚石的涂层可以与其它的保护性材料掺杂使用。其它保护性材料的掺杂浓度希望小于等于金刚石涂层重量的1%,更希望的在金刚石涂层重量的大约100ppm到1%之间,进一步希望的在金刚石涂层重量的0.001%到0.1%之间。
本发明的含金刚石的涂层也可以是与其它的保护性材料构成的复合材料。该复合材料希望有一个含金刚石的涂层的连续的基体相。其它保护性材料的复合浓度希望大于涂层100重量的1%,更希望的在涂层的大约20%到80%之间,进一步希望的在涂层的大约40%到60%之间。在一些情况下,尤其是成本具有很大重要性的情况下,金刚石或者类金刚石涂层的百分比是非常低的,例如,低于涂层重量的20%,10%,5%和1%。
本发明中的含金刚石的涂层可用任意所知的涂覆技术来沉积到所希望的表面上,如热喷涂,等离子体喷涂,化学气相沉积,升华,激光蒸发,溅射,溅射沉积,离子束涂层,喷敷涂层,浸镀,蒸发,辊涂,毛刷涂层等。还希望将一层或多层含金刚石的涂层与或者不与其它材料的中间层一起用任意适宜的技术沉积到所希望的表面上。
在本发明的一个可选的方面,提供一种由含金刚石的材料制成的半导体工艺设备部件。该部件可以包括传统地用于该设备的任意一种或者多种涂层。
通过使用本发明的含金刚石的涂层或者部件,优选的可获得一种超硬的,抗侵蚀的表面。在该涂层或者部件中,希望不含那些与工艺腔室气体反应的物质而且是化学惰性的,这样就有低的颗粒污染或者没有颗粒污染,轻微的腐蚀或者没有腐蚀,轻微的金属污染或者没有金属污染及/或少量的挥发性的刻蚀产物或者没有挥发性的刻蚀产物。
优选地,含金刚石的涂层或者部件放在那些可以或者不可以暴露在等离子体环境下的区域里,如直接与等离子体接触的部分或者腔室部件后面的部分,如衬里等,以防止在反应器腔室中处理的半导体衬底的金属污染。尤其优选的是要限制或者排除过渡金属的尘埃;比如在周期表中的元素21到29(钪到铜),39到47(钇到银),57到79(镧到金)和所有从89(锕)往后的所知元素中的任意的一种或者多种元素。所以,本发明的一个优势就是通过抑制这些因侵蚀或者腐蚀而产生的尘埃,在沉积膜上减少了所不满意的刻蚀或者不希望的针状气孔的形成。
尽管已结合其具体的实施方案,对本发明进行了详细的描述,对本领域技术人员来讲,明显地,不脱离所附权利要求的范围,可进行多样的变化和改善,并可等价地采用。
Claims (30)
1.一种对半导体工艺设备部件表面进行涂层的涂层方法,所述部件具有金属、合金、陶瓷或者聚合物表面,该方法包括:
(a)可选地,在半导体工艺设备部件表面沉积一个第一中间涂层;
(b)可选地,在上述第一中间涂层或者上述表面上沉积一个第二中间涂层;并
(c)沉积一个含金刚石的涂层以形成一个抗腐蚀的外表面,该含金刚石的涂层包括选自难熔金属,聚合物,碳化物,硼化物,氮化物,碳氮化物,氧化锆,氧化钇,TiO2和Al2O3的至少一种其它材料。
2.权利要求1中的涂层方法,其中所述部件的所述表面包含一种金属,陶瓷或者聚合物的表面。
3.权利要求2中的涂层方法,其中所述表面是阳极化铝。
4.权利要求1中的涂层方法,其中所述第一中间涂层是必需的。
5.权利要求4中的涂层方法,其中所述第一中间涂层包含一种金属,陶瓷或者聚合物的涂层。
6.权利要求1中的涂层方法,其中所述部件包含等离子体刻蚀腔室的腔室壁。
7.权利要求1中的涂层方法,进一步包含在所述部件上制备一个粗化表面,在该粗化表面上沉积所述含金刚石的涂层。
8.权利要求1中的涂层方法,其中所述含金刚石的涂层包括无定形碳、硬质碳和/或α-碳。
9.权利要求1中的涂层方法,其中所述含金刚石的涂层包含金刚石或者类金刚石材料和所述至少一种其它材料。
10.权利要求1中的涂层方法,其中所述其它材料是难熔金属或者聚合物。
11.权利要求10中的涂层方法,其中所述其它材料包括碳化钛,硼化钛,氮化钛,碳化硅,硼化硅,氮化硅或其混合物。
12.权利要求1中的涂层方法,其中所述含金刚石的涂层用所述至少一种其它材料进行掺杂。
13.权利要求1中的涂层方法,其中所述含金刚石的涂层是一种金刚石或类金刚石材料与所述其它材料的复合材料形式。
14.权利要求1中的涂层方法,其中所述含金刚石的涂层通过化学气相沉积,等离子体喷涂,升华,激光蒸发,溅射,溅射沉积,离子束涂层,喷敷涂层,浸镀,蒸发涂层,辊涂或者毛刷涂层进行沉积。
15.一种半导体工艺设备部件,包含:
(a)一个表面,所述表面是金属、合金、陶瓷或者聚合物表面;
(b)一个可选的在上述表面上的第一中间涂层;
(c)一个可选的在上述第一中间涂层或者上述表面上的第二中间涂层;及
(d)一个在上述部件上形成抗腐蚀外表面的含金刚石的涂层,该含金刚石的涂层包括选自难熔金属,聚合物,碳化物,硼化物,氮化物,碳氮化物,氧化锆,氧化钇,TiO2和Al2O3的至少一种其它材料。
16.权利要求15中的部件,其中所述表面是一种金属,陶瓷或者聚合物的表面。
17.权利要求16中的部件,其中所述表面是阳极化铝。
18.权利要求15中的部件,其中所述第一中间涂层是必需的。
19.权利要求15中的部件,其中所述部件包含等离子体刻蚀腔室的腔室壁。
20.权利要求15中的部件,其中所述含金刚石的涂层包括无定形碳、硬质碳和/或α-碳。
21.权利要求15中的部件,其中所述其它材料是难熔金属或者聚合物。
22.权利要求21中的部件,其中所述其它材料包括碳化钛,硼化钛,氮化钛,碳化硅,硼化硅,氮化硅或其混合物。
23.权利要求15中的部件,其中所述含金刚石的涂层用所述至少一种其它材料进行掺杂。
24.权利要求15中的部件,其中所述含金刚石的涂层是一种金刚石或类金刚石材料与所述其它材料的复合材料形式。
25.权利要求15中的部件,进一步包含一个或多个附加的含金刚石的涂层或者中间涂层。
26.权利要求15中的部件,其中金刚石或类金刚石材料在所述含金刚石的涂层内形成连续的基体相。
27.一种半导体工艺设备部件,在该设备中至少有一个表面暴露在等离子体中,该部件包括含金刚石的材料,该含金刚石的材料在该设备中形成暴露在等离子体中的表面,该含金刚石的材料包括选自难熔金属,聚合物,碳化物,硼化物,氮化物,碳氮化物,氧化锆,氧化钇,TiO2和Al2O3的至少一种材料。
28.权利要求27中的部件,其中所述整个部件由所述含金刚石的材料制成。
29.一种半导体工艺设备部件,在该设备中至少有一个表面暴露在等离子体中,该部件包括含金刚石的材料,该含金刚石的材料在该设备中形成暴露在等离子体中的表面,该含金刚石材料的厚度为至少0.002英寸。
30.一种半导体工艺设备部件,在该设备中至少有一个表面暴露在等离子体中,该部件包括含金刚石的材料,该含金刚石的材料在该设备中形成暴露在等离子体中的表面,该含金刚石材料含有金刚石或类金刚石材料和20%到80%的至少一种另外的材料。
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US09/749,925 US6537429B2 (en) | 2000-12-29 | 2000-12-29 | Diamond coatings on reactor wall and method of manufacturing thereof |
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CN (1) | CN1284880C (zh) |
AT (1) | ATE401430T1 (zh) |
AU (1) | AU2002228604A1 (zh) |
DE (1) | DE60134896D1 (zh) |
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Families Citing this family (387)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3555844B2 (ja) * | 1999-04-09 | 2004-08-18 | 三宅 正二郎 | 摺動部材およびその製造方法 |
KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
US6613442B2 (en) * | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
JP2003231203A (ja) * | 2001-08-21 | 2003-08-19 | Toshiba Corp | 炭素膜被覆部材 |
DE10163171A1 (de) * | 2001-12-21 | 2003-07-03 | Solvay Fluor & Derivate | Neue Verwendung für Legierungen |
KR100460143B1 (ko) * | 2002-08-02 | 2004-12-03 | 삼성전자주식회사 | 반도체 제조설비용 프로세스 챔버 |
US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US7204912B2 (en) | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7166166B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US6798519B2 (en) | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US6969198B2 (en) * | 2002-11-06 | 2005-11-29 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
US7780786B2 (en) | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US20040134427A1 (en) * | 2003-01-09 | 2004-07-15 | Derderian Garo J. | Deposition chamber surface enhancement and resulting deposition chambers |
KR20050094436A (ko) * | 2003-01-27 | 2005-09-27 | 동경 엘렉트론 주식회사 | 패스닝 하드웨어를 개선하기 위한 방법 및 장치 |
WO2004095532A2 (en) * | 2003-03-31 | 2004-11-04 | Tokyo Electron Limited | A barrier layer for a processing element and a method of forming the same |
JP3891433B2 (ja) * | 2003-04-15 | 2007-03-14 | 日産自動車株式会社 | 燃料噴射弁 |
EP1479946B1 (en) * | 2003-05-23 | 2012-12-19 | Nissan Motor Co., Ltd. | Piston for internal combustion engine |
EP1482190B1 (en) * | 2003-05-27 | 2012-12-05 | Nissan Motor Company Limited | Rolling element |
JP2005008851A (ja) * | 2003-05-29 | 2005-01-13 | Nissan Motor Co Ltd | 硬質炭素薄膜付き機械加工工具用切削油及び硬質炭素薄膜付き機械加工工具 |
JP4863152B2 (ja) * | 2003-07-31 | 2012-01-25 | 日産自動車株式会社 | 歯車 |
WO2005014761A2 (ja) * | 2003-08-06 | 2005-02-17 | Nissan Motor Co., Ltd. | 低摩擦摺動機構、低摩擦剤組成物及び摩擦低減方法 |
JP2005054617A (ja) * | 2003-08-08 | 2005-03-03 | Nissan Motor Co Ltd | 動弁機構 |
JP4973971B2 (ja) * | 2003-08-08 | 2012-07-11 | 日産自動車株式会社 | 摺動部材 |
JP4117553B2 (ja) * | 2003-08-13 | 2008-07-16 | 日産自動車株式会社 | チェーン駆動装置 |
US7771821B2 (en) * | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
EP1508611B1 (en) | 2003-08-22 | 2019-04-17 | Nissan Motor Co., Ltd. | Transmission comprising low-friction sliding members and transmission oil therefor |
US7824498B2 (en) * | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
US7119032B2 (en) * | 2004-08-23 | 2006-10-10 | Air Products And Chemicals, Inc. | Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
US7552521B2 (en) * | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
US20060280946A1 (en) * | 2005-05-20 | 2006-12-14 | United Technologies Corporation | Metal-containing diamond-like-carbon coating compositions |
CN1870863B (zh) * | 2005-05-28 | 2011-06-08 | 鸿富锦精密工业(深圳)有限公司 | 便携式电子装置外壳及其制作方法 |
JP4817102B2 (ja) * | 2005-10-03 | 2011-11-16 | 麒麟麦酒株式会社 | ダイヤモンド状炭素薄膜、それを表面に成膜したプラスチックフィルム及びガスバリア性プラスチックボトル |
KR100757347B1 (ko) * | 2006-08-30 | 2007-09-10 | 삼성전자주식회사 | 이온 주입 장치 |
US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
KR100773486B1 (ko) * | 2007-05-23 | 2007-11-05 | 주식회사 넥스텍 | 표면이 코팅된 폴리쉬 캐리어 및 이의 코팅 방법 |
US8187414B2 (en) * | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
JP2009123795A (ja) * | 2007-11-13 | 2009-06-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
ES2736731T3 (es) | 2008-07-18 | 2020-01-07 | Suneeta Neogi | Método para producir recubrimientos de diamante nanocristalino sobre piedras preciosas |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20110076400A1 (en) * | 2009-09-30 | 2011-03-31 | Applied Materials, Inc. | Nanocrystalline diamond-structured carbon coating of silicon carbide |
DE102009044876A1 (de) | 2009-12-14 | 2011-06-16 | Elmar Hans Schmidbauer Gmbh & Co. Kg | Verwendung von Funktionselementen mit Diamantbeschichtung auf Zwischenschichten auf Stahlsubstraten als Funktions- elemente mit Schutzbeschichtung gegen Kavitationserosion |
CN102534611A (zh) * | 2010-12-27 | 2012-07-04 | 鸿富锦精密工业(深圳)有限公司 | 壳体及其制造方法 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
FI123883B (fi) * | 2011-09-16 | 2013-11-29 | Picodeon Ltd Oy | Kohtiomateriaali, pinnoite ja pinnoitettu esine |
CN102456568A (zh) * | 2011-09-29 | 2012-05-16 | 上海华力微电子有限公司 | 一种淀积掺氮碳化硅薄膜的方法 |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US20140099794A1 (en) * | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
EP3056069A4 (en) * | 2013-10-07 | 2017-06-21 | Aeonclad Coatings, LLC | Low-cost plasma reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
CN105986245A (zh) * | 2015-02-16 | 2016-10-05 | 中微半导体设备(上海)有限公司 | 改善mocvd反应工艺的部件及改善方法 |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US11008655B2 (en) * | 2016-03-03 | 2021-05-18 | Lam Research Corporation | Components such as edge rings including chemical vapor deposition (CVD) diamond coating with high purity SP3 bonds for plasma processing systems |
JP6400227B2 (ja) | 2016-04-05 | 2018-10-03 | 関東電化工業株式会社 | 半導体製造装置のクリーニング方法 |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
JP6851217B2 (ja) * | 2017-02-16 | 2021-03-31 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
CN107267952B (zh) * | 2017-05-05 | 2023-05-23 | 宁波工程学院 | 一种化学气相沉积镀制金刚石膜的方法 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
CN111316417B (zh) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | 与批式炉偕同使用的用于储存晶圆匣的储存装置 |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
KR102159224B1 (ko) * | 2018-07-17 | 2020-09-23 | 주식회사 마스터 | 포커스 링, 그 제조 방법, 및 기판 처리 장치 |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
TW202115273A (zh) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
WO2021154474A1 (en) * | 2020-01-30 | 2021-08-05 | Exxonmobil Chemical Patents Inc. | Autoclave reactor system comprising an agitator with polycrystalline diamond bearings |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202140831A (zh) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含氮化釩層及包含該層的結構之方法 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
CN114686848B (zh) * | 2020-12-29 | 2024-05-14 | 中微半导体设备(上海)股份有限公司 | 半导体零部件、半导体处理装置及形成耐腐蚀涂层的方法 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN115819118B (zh) * | 2022-11-25 | 2023-09-22 | 湖南柯盛新材料有限公司 | 抗氧化涂层和含有抗氧化涂层的石墨模具及其制备方法 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
FR2538987A1 (fr) | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
US4534816A (en) | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
US4612077A (en) | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
JPS62103379A (ja) | 1985-10-29 | 1987-05-13 | Showa Alum Corp | Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法 |
JPS6413404A (en) * | 1987-07-07 | 1989-01-18 | Sumitomo Electric Industries | Opening and closing state detection sensor |
JPH0741153Y2 (ja) | 1987-10-26 | 1995-09-20 | 東京応化工業株式会社 | 試料処理用電極 |
US5262029A (en) | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
JPH0656842B2 (ja) | 1990-04-30 | 1994-07-27 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 導電性ダイヤモンド被覆表面を有するプラズマ反応チャンバ |
GB2243577A (en) | 1990-05-07 | 1991-11-06 | Compeq Manufacturing Co Limite | A method of bonding copper and resin |
US5268200A (en) * | 1990-05-21 | 1993-12-07 | Applied Materials, Inc. | Method of forming plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion |
US5200232A (en) | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
US5989511A (en) | 1991-11-25 | 1999-11-23 | The University Of Chicago | Smooth diamond films as low friction, long wear surfaces |
DE4300223A1 (de) | 1993-01-07 | 1994-07-14 | Hora Heinrich | Erosionsfeste Überzüge an Innenwänden von Plasmabehältern |
US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5308661A (en) | 1993-03-03 | 1994-05-03 | The Regents Of The University Of California | Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate |
US5522932A (en) | 1993-05-14 | 1996-06-04 | Applied Materials, Inc. | Corrosion-resistant apparatus |
US5891253A (en) | 1993-05-14 | 1999-04-06 | Applied Materials, Inc. | Corrosion resistant apparatus |
JP3308091B2 (ja) | 1994-02-03 | 2002-07-29 | 東京エレクトロン株式会社 | 表面処理方法およびプラズマ処理装置 |
US5798016A (en) | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
US5680013A (en) | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
KR100331053B1 (ko) | 1994-05-17 | 2002-06-20 | 가나이 쓰도무 | 플라즈마처리장치및플라즈마처리방법 |
US5393572A (en) | 1994-07-11 | 1995-02-28 | Southwest Research Institute | Ion beam assisted method of producing a diamond like carbon coating |
US5641375A (en) | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
FR2726579A1 (fr) | 1994-11-07 | 1996-05-10 | Neuville Stephane | Procede de depot d'un revetement protecteur de type pseudo carbonne diamant amorphe |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5569356A (en) | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
US5824605A (en) | 1995-07-31 | 1998-10-20 | Lam Research Corporation | Gas dispersion window for plasma apparatus and method of use thereof |
US5838529A (en) | 1995-12-22 | 1998-11-17 | Lam Research Corporation | Low voltage electrostatic clamp for substrates such as dielectric substrates |
JP3360265B2 (ja) | 1996-04-26 | 2002-12-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US6048798A (en) | 1996-06-05 | 2000-04-11 | Lam Research Corporation | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer |
US5863376A (en) | 1996-06-05 | 1999-01-26 | Lam Research Corporation | Temperature controlling method and apparatus for a plasma processing chamber |
US5812362A (en) | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
US5952060A (en) | 1996-06-14 | 1999-09-14 | Applied Materials, Inc. | Use of carbon-based films in extending the lifetime of substrate processing system components |
US5904778A (en) | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
US5879523A (en) | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
US6015597A (en) | 1997-11-26 | 2000-01-18 | 3M Innovative Properties Company | Method for coating diamond-like networks onto particles |
US5916370A (en) | 1998-06-12 | 1999-06-29 | Applied Materials, Inc. | Semiconductor processing chamber having diamond coated components |
JP2000012523A (ja) * | 1998-06-22 | 2000-01-14 | Fujitsu Ltd | 半導体装置の製造方法 |
US6508911B1 (en) | 1999-08-16 | 2003-01-21 | Applied Materials Inc. | Diamond coated parts in a plasma reactor |
-
2000
- 2000-12-29 US US09/749,925 patent/US6537429B2/en not_active Expired - Fee Related
-
2001
- 2001-11-21 EP EP20010989716 patent/EP1358363B1/en not_active Expired - Lifetime
- 2001-11-21 AU AU2002228604A patent/AU2002228604A1/en not_active Abandoned
- 2001-11-21 KR KR1020037008678A patent/KR100853972B1/ko not_active IP Right Cessation
- 2001-11-21 AT AT01989716T patent/ATE401430T1/de not_active IP Right Cessation
- 2001-11-21 JP JP2002555455A patent/JP4358509B2/ja not_active Expired - Fee Related
- 2001-11-21 CN CNB018215580A patent/CN1284880C/zh not_active Expired - Fee Related
- 2001-11-21 DE DE60134896T patent/DE60134896D1/de not_active Expired - Lifetime
- 2001-11-21 WO PCT/US2001/043153 patent/WO2002054454A2/en active Application Filing
- 2001-12-04 TW TW90130003A patent/TWI267563B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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US20020086501A1 (en) | 2002-07-04 |
KR100853972B1 (ko) | 2008-08-25 |
WO2002054454A3 (en) | 2002-09-12 |
WO2002054454A2 (en) | 2002-07-11 |
EP1358363A2 (en) | 2003-11-05 |
EP1358363B1 (en) | 2008-07-16 |
KR20030063475A (ko) | 2003-07-28 |
ATE401430T1 (de) | 2008-08-15 |
JP2004526054A (ja) | 2004-08-26 |
JP4358509B2 (ja) | 2009-11-04 |
AU2002228604A1 (en) | 2002-07-16 |
TWI267563B (en) | 2006-12-01 |
CN1488009A (zh) | 2004-04-07 |
DE60134896D1 (de) | 2008-08-28 |
US6537429B2 (en) | 2003-03-25 |
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