CN1488009A - 反应器壁上的金刚石涂层及其制造方法 - Google Patents

反应器壁上的金刚石涂层及其制造方法 Download PDF

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CN1488009A
CN1488009A CNA018215580A CN01821558A CN1488009A CN 1488009 A CN1488009 A CN 1488009A CN A018215580 A CNA018215580 A CN A018215580A CN 01821558 A CN01821558 A CN 01821558A CN 1488009 A CN1488009 A CN 1488009A
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R��J���¶�����
R·J·奥多尼尔
J·E·道格尔蒂
C·C·常
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Abstract

半导体工艺设备如等离子体腔的一种包括一个含金刚石的表面的抗腐蚀部件，及其制造方法。

Description

反应器壁上的金刚石涂层及其制造方法
发明背景
1.发明领域
本发明涉及半导体工艺设备以及提高这些部件抗腐蚀性的方法。
2.相关技术描述
在半导体工艺领域中，通常使用真空工艺腔来在衬底上进行材料的刻蚀和化学气相沉积(CVD)，将刻蚀或者沉积气体供入真空腔中，并对气体施加一种RF场将气体激发到等离子体状态。在专利号为4340462，4948458，5200232和5820723的共同所有的US专利中公开了平行板式变压耦合等离子体(TCPTM)，也叫做电感耦合等离子体(ICP)，和电子回旋共振(ECR)反应器及其部件的例子。由于这些反应器中等离子体环境的腐蚀性以及极小化颗粒和/或重金属污染的需要，高度希望这些设备的部件呈现出高的抗腐蚀性。
在半导体衬底的处理过程中，衬底一般用衬底夹具例如机械钳和静电钳(ESC)固定在真空腔中。这些钳制系统及其部件的例子可以在专利号为5262029和5838529的共同所有的US专利中找到。处理气体可以通过许多方式供入腔室中，比如通过气体喷嘴，导气环，气体分布板等。在专利号为5863376的共同所有的US专利中可以找到一种用于电感耦合等离子体反应器的温控气体分布板及其部件的例子。除了等离子体腔室设备，在半导体衬底处理过程中使用的其它设备包括传送机构，气体供应系统，衬里，起落机构，加载锁，室门机构，机械臂，紧固件及其它类似的设备。这些设备的部件要承受多种与半导体工艺相关的腐蚀条件。而且，考虑到半导体衬底处理对高纯度的需要，如硅晶片及介电材料如用于平板显示的玻璃衬底，高度希望在这些环境中的部件具有改善了的抗腐蚀性。
通常地，将铝和铝合金用于等离子体反应器的器壁，电极，衬底支撑，紧固件及其它的部件。为了防止这些金属部件的腐蚀，已提出了在铝表面用各种涂层进行涂覆的多种技术。例如，在专利号为5641 375的US专利中公开了进行了阳极化处理的铝腔室壁，减少了等离子体对腔壁的侵蚀和磨损。专利’375指出，阳极化层最终会被溅射掉或刻蚀掉，腔室必须进行更换。专利号为5895586的US专利指出可以在序列号为62-103379的日本中请公开中找到一种技术，来在铝材料上制备Al2O3，AlC，TiN，TiC，AlN或者其它类似的抗侵蚀膜。
专利号为5680013的US专利指出，在专利号为4491496的US专利中公开了一种在刻蚀腔室的金属表面火焰喷镀Al2O3的技术。专利’013指出铝和陶瓷涂层如氧化铝间的热膨胀系数的不同会导致涂层因热循环而开裂，涂层最终在腐蚀环境下失效。为保护腔壁，专利号为5366585，5798016和5885356的US专利提出了衬里配置。例如，专利’016公开了一种因其易加工性而优选的与铝共用的由陶瓷，铝，钢和/或石英组成的衬里，并涂覆一个氧化铝，Sc2O3或者Y2O3涂层来为铝针对等离子体提供保护，优选的是Al2O3。专利’585公开了一种独立式陶瓷衬里，厚度至少为0.005英寸，由固体氧化铝加工而成。专利’585提到通过火焰喷镀或者等离子体喷镀氧化铝，也能提供不用消耗下面的铝即可沉积的陶瓷层。专利’356公开了用于晶片基座的一种氧化铝陶瓷衬里和一种氮化铝陶瓷屏蔽。专利号为5885356的US专利公开了在CVD腔室内可用的陶瓷衬里材料。
对于半导体工艺设备的金属部件已提出了多种涂层。例如，专利号为5879523的US专利公开了一种溅射腔，其中在诸如不锈钢或者铝的金属上应用了一种热喷镀Al2O3涂层，并且二者之间有一个可选的含NiAlx键合的涂层。专利号为5522932和589153的US专利公开了一种用在衬底等离子体处理设备的金属部件上的铑涂层，二者之间有一个可选的镍涂层。专利号为5680013的US专利公开了一种在等离子体工艺腔室中保护金属表面的非键合陶瓷，优选的陶瓷材料是烧结AlN，其次优选的材料包括氧化铝，氟化镁和氧化镁。专利号为5904778的US专利公开了一种在独立式SiC上的SiC CVD涂层，可用作腔室壁，腔室顶或者围绕晶片的套环。
对于等离子体反应器的部件，如莲蓬式喷头气体分布系统，已有针对莲蓬式喷头材料的许多提议。例如，专利号为5569356的共同所有的US专利公开了一种由硅，石墨或者碳化硅制成的莲蓬式喷头。专利号为5494713的US专利指出，可在铝电极上制备一种防蚀钝化铝膜，并在该钝化膜上加覆一个硅涂层膜，如氧化硅或者氮化硅。专利’713指出，由于铝涂层膜，防蚀钝化铝涂层膜和硅涂层膜具有不同的线膨胀系数，硅涂层膜的厚度应为10μm或者以下，优选的为5μm，硅涂层膜太厚时容易产生裂纹。然而，厚度低于5μm，由于对铝衬底的保护不充分，因而是不可取的。专利号为4534516的US专利公开了一种不锈钢，铝，铜及其它类似材料制成的上部莲蓬式喷头电极。专利号为4612077的US专利公开了一种镁制成的莲蓬式喷头电极。专利号为5888907的US专利公开了一种无定形碳，SiC或者Al制成的莲蓬式喷头电极。专利号为5006220和5022979的US专利公开了一种莲蓬式喷头电极，要么完全由SiC制成，要么是将通过CVD沉积的SiC涂覆在碳基体上，提供一个高纯SiC的表面层。
专利号为5952060的US专利描述了碳基涂层的使用，来对衬底处理系统的内部腔室进行保护。碳基涂层是金刚石或者类金刚石的碳涂层，其厚度在大约1μm到50μm之间。专利号为5812362的US专利描述了在静电卡盘上的金刚石膜的使用，其中金刚石膜的厚度在5到50μm之间。这些专利的每一个都公开了极薄的金刚石和类金刚石涂层的选择使用。
其它的专利，比如专利号为5308661，5393572，5846613，5989511和6015597的US专利也公开了金刚石或者类金刚石涂层。这些专利都没有描述这些涂层在等离子体反应器中的使用。
考虑到半导体工艺设备部件对高纯度和抗腐蚀性的需求，在该领域内，对用于这些部件的材料和/或涂层需要进行改善。而且，对于腔室材料来讲，能够提高等离子体反应器腔室的使用寿命，从而减少设备的停机时间的任何材料将有利于降低半导体晶片处理的成本。
发明简述
本发明的第一个方面，提供一种方法，该方法可以在半导体工艺设备部件表面提供一种抗侵蚀的含金刚石或类金刚石的涂层。该方法包括在半导体工艺设备部件表面沉积一种含金刚石或类金刚石的涂层，以形成一个抗侵蚀的外表面。抗侵蚀表面，意味着表面涂层抵抗等离子体腔室气体对涂层的刻蚀时，保护下面的材料免于等离子体腔室气体的腐蚀作用。下面的被涂覆的工艺设备部件的表面可包含一种金属，陶瓷或者聚合物材料，一种优选的材料是阳极化铝。
在一个优选的实施方案中，在半导体工艺设备的表面和含金刚石或类金刚石的涂层之间，可以使用一种或者多种中间金属，陶瓷或者聚合物涂层。用于等离子体腔室的可被涂覆的金属的表面包括阳极化铝或非阳极化铝，不锈钢，难熔金属如钼或其它金属或者合金。可被涂覆的陶瓷的表面包括氧化铝，SiC，AlN，Si3N4，BC或者其它与等离子体相容的陶瓷材料。可被涂覆的聚合物的表面包括含氟聚合物如Teflon，聚酰亚胺如Vespel和其它可在达200℃的温度下用于等离子体腔室的聚合物材料。
本发明的第二个方面，提供一种金属部件。该部件包括：(a)一个金属表面；(b)一个可选的在金属表面上的第一中间涂层；(c)一个可选的在第一中间涂层或者金属表面上的第二中间涂层；及一个在此部件上提供抗腐蚀的外表面的含金刚石或类金刚石的涂层。第一和第二中间涂层的每个可以是金属或其合金，陶瓷，聚合物或用于等离子体腔室反应器的材料的混合物或复合材料。
本发明的另一个方面，提供一种由含金刚石或类金刚石的材料制成的半导体工艺设备部件。该部件可以包括用于该设备的任意的一种或者多种涂层。
附图简述
结合附图对其优选的实施方案进行下面的详述将使本发明的目的和优势变得明显，附图中：
图1是等离子体反应器腔室的剖面示意图，其中含有一个根据本发明涂覆了一种抗腐蚀涂层的部件。
图2是图1中细节A中的抗腐蚀涂层的详细说明图。
本发明的优选实施方案详述
本发明通过利用一种抗侵蚀涂层，为给半导体工艺设备部件如等离子体工艺反应器腔室部件的金属，陶瓷和聚合物表面提供抗腐蚀性提供了一种有效的方法。这些部件包括腔室壁，衬底支撑，气体分布系统包括莲蓬式喷头，折流板，套环，喷嘴等，紧固件，加热元件，等离子体屏，衬里，传输模块部件，例如：机械臂，紧固件，内外腔室壁等，以及其它部件。
尽管本发明适用于任意类型的具有金属，陶瓷或者聚合物表面的部件，为了便于说明，结合参考在专利号为5820723的US专利中描述的设备来对本发明作更详细的描述，这里对整个专利作了参考。
图1示意的是一个真空工艺反应器腔室10，包括衬底支撑70，其为衬底60提供一个静电钳力，当用He背冷时也为衬底提供一个RF偏置。聚焦环72，在衬底上方限定了一个等离子体域。能量源，以在腔室中保持高密度(如1011-1012离子/cm3)的等离子体，例如由适宜的RF源驱动以提供高密度等离子体的天线40，放置在反应器腔室10的顶部。该腔室包括适宜的真空泵浦设备，通过在腔室底部的位于中心的真空接口20将腔室抽空，以使腔室的内部30保持在所希望的压力(例如低于50mTorr，一般的在1-20mTorr)。
在天线40和工艺腔室10的内部之间是一个基本上具有均一厚度的平面介电窗50，其在工艺腔室10的顶部构成真空壁。在窗50下面是一个气体分布板52，其上包含诸如圆孔的开口，以使处理气体从供气处传递到腔室10中。一个锥形的衬里54从气体分布板延伸出来并包围在衬底支撑70之上。
在操作中，将半导体衬底如硅晶片60放置在衬底支撑70上，典型地，当使用He背冷时，用一个静电钳74来固定。然后通过使处理气体穿过窗50和气体分布板52之间的间隙将处理气体供给到真空工艺腔室10中。在专利号为5824605，6048798和5863376的共同所有的US专利中公开了适用的气体分布板配置(如莲蓬式喷头)，据此将这些公开资料作为参考。例如，尽管在图1中的窗口和气体分布板配置是平面的并有均一的厚度，对窗口和/或气体分布板而言，可以用非平面的和/或非均一厚度的几何形状。通过向天线40施加适宜的RF源，在衬底和窗口之间的空间里触发高密度的等离子体。
腔室壁28，比如阳极化或非阳极化的铝壁，和金属，陶瓷或者聚合物部件，比如衬底支撑70，紧固件56，衬里54等，暴露在等离子体中并表现出腐蚀征兆，根据本发明，选择将这些部件进行涂层，这样，在等离子体腔室的操作中就不需要把它们罩住。可被涂覆的金属和/或合金的例子包括阳极化或非阳极化铝及其合金，不锈钢，难熔金属如W和Mo及其合金，铜及其合金等。可被涂覆的陶瓷的表面的例子包括氧化铝，SiC，AlN，Si3N4，BC和TiO2。商业可获的可被涂覆的聚合物材料的例子包括含氟聚合物如Teflon，聚酰亚胺如Vespel和其它在达200℃的温度下可用于等离子腔室的聚合物材料。在一个优选的实施方案中，被涂覆的部件是具有一个阳极化或者非阳极化铝的表面29的腔室壁28。根据本发明，涂层允许使用铝合金而不用考虑它的组成(这样除了高纯铝外，还允许使用更经济的铝合金)，晶粒结构或者表面条件。在下面的讨论中，被涂覆的部件的例子是一个铝腔室壁28，其具有一个可选的第一中间涂层80，一个可选的第二中间涂层90和一个含金刚石的涂层100，如图2中所示。
为了保证涂覆材料的好的粘附性，优选地，在涂覆之前，将铝衬底28表面彻底净化以除去表面物质，比如氧化物或者油脂。另外，特别希望的是，在应用任意所希望的涂层之前，将衬底表面粗化，阳极化衬底表面并对阳极化的衬底表面再次粗化。
根据本发明，可选地，通过一种传统技术将第一中间涂层80涂覆在铝侧壁28上。这种可选的第一中间涂层80是足够厚的，以粘附在衬底之上并进一步允许在制备可选的第二中间涂层90或者下面要提及的含金刚石的涂层之前对其进行处理。第一中间涂层80可以是任意适用的厚度，比如至少大约0.001英寸的厚度，优选的从大约0.001到大约0.25英寸，更优选的在0.001和0.1英寸之间，最优选的在从0.001英寸到0.05英寸。
在将可选的第一中间涂层80沉积到铝衬底28上之后，镀层可以用任意适用的技术来进行喷砂或者粗化，然后，用可选的第二涂层90或者含金刚石的涂层100来涂覆。粗化层80提供相当好的键合。所希望地，第二中间涂层90给涂层80带来高的机械压缩强度并在涂层90中减少裂缝的形成。
可选的第二中间涂层90是足够厚的，以粘附在第一中间涂层80上，并进一步允许在制备任意附加的中间涂层或者下述的含金刚石的外部涂层100之前对其进行处理。第二中间涂层90可以是任意适用的厚度，比如至少大约0.001英寸的厚度，优选的从大约0.001到大约0.25英寸，更优选的在0.001和0.1英寸之间，最优选的在0.001英寸和0.05英寸之间。
第一和第二中间涂层可以用在传统的等离子体工艺腔室中使用的任意一种或者多种材料制成。这些材料的例子包括金属，陶瓷和聚合物。尤其希望的金属包括任意一种或多种难熔金属，含这些金属的复合材料或合金。尤其希望的陶瓷包括Al2O3，SiC，Si3N4，BC，AlN，TiO2等。尤其希望的聚合物包括含氟聚合物如Teflon，聚酰亚胺如Vespel和其它的在达200℃的温度下可用于等离子体腔室的聚合物材料。预期的中间层的特殊材料还包括含富勒烯的材料；其它含碳的硬质材料如金刚石和类金刚石材料；例如铪，钽，钛和/或硅的碳化物，硼化物，氮化物和/或碳氮化物；碳化硼；氮化硼；碳氮化硼；氧化锆；氧化钇，或者任意上述材料的混合材料。
所希望地，可选的第一和第二中间涂层80和90可以是上述材料的任意一种，这样依赖所预想的性能，涂层可以是相同的或者不同的。也希望可以采用相同或者不同材料的附加中间层如第三，第四或者第五中间层。
含金刚石的涂层100沉积在可选的第二中间层90上，或者可选的第一中间层80上，或者铝衬底28上。含金刚石的涂层的所希望的厚度是至少0.001英寸；优选的从大约0.001到大约0.25英寸，更优选的从大约0.001到大约0.1英寸，最优选的在从0.001到0.05英寸。最希望地，金刚石或者类金刚石涂层的厚度应能为下面的层，尤其是衬底，在暴露于腐蚀性腔室气体的相当长的阶段提供侵蚀和/或腐蚀保护。较希望地，所有涂层的厚度等于或者大于0.001英寸，最希望的厚度在大约0.002到0.010英寸之间。含金刚石或者类金刚石的涂层100的厚度可选择以与在反应器中遇到的等离子体环境(如刻蚀，CVD等)相容。这种含金刚石的涂覆层可以将上述反应器腔室和部件整个涂覆，或者部分涂覆。
含金刚石的涂层，这里意味着一种其中含有金刚石或者类金刚石材料的涂层。类金刚石的材料是那些具有许多但不是全部的金刚石性能的碳基材料。这些材料包括无定形碳，硬质碳和α-碳。优选的类金刚石材料是硬度超过金刚石硬度的50％的非晶碳材料，优选的超过金刚石硬度的70％。所有这些金刚石或者类金刚石涂层，在下文中一并称为含金刚石的涂层。
考虑到所希望的厚度，最希望将含金刚石的涂层与其它保护性材料掺杂或者混合使用，这样，含金刚石的涂层就是金刚石或者类金刚石材料与其它保护性材料的复合材料。这些材料可以包括在传统的等离子体工艺腔室中采用的任意一种或者多种材料。这些材料的例子包括任意一种或多种金属，陶瓷或者聚合物。尤其希望的金属包括任意一种或多种难熔金属，含这些金属的复合材料或合金。尤其希望的陶瓷包括Al2O3，SiC，Si3N4，BC，AlN，TiO2等。尤其希望的聚合物包括含氟聚合物如Teflon，聚酰亚胺如Vespel和其它的在达200℃的温度下可用于等离子体腔室的聚合物材料。相信最希望的材料将包括单独存在的或者与例如铪，钽，钛和/或硅的碳化物，硼化物，氮化物和/或碳氮化物；碳化硼；氮化硼；碳氮化硼；氧化锆；氧化钇，或者上述材料的混合物一同存在的金刚石或者类金刚石材料。
如上所述，本发明的含金刚石的涂层可以与其它的保护性材料掺杂使用。其它保护性材料的掺杂浓度希望小于等于金刚石涂层重量的1％，更希望的在金刚石涂层重量的大约100ppm到1％之间，进一步希望的在金刚石涂层重量的0.001％到0.1％之间。
本发明的含金刚石的涂层也可以是与其它的保护性材料构成的复合材料。该复合材料希望有一个含金刚石的涂层的连续的基体相。其它保护性材料的复合浓度希望大于涂层100重量的1％，更希望的在涂层的大约20％到80％之间，进一步希望的在涂层的大约40％到60％之间。在一些情况下，尤其是成本具有很大重要性的情况下，金刚石或者类金刚石涂层的百分比是非常低的，例如，低于涂层重量的20％，10％，5％和1％。
本发明中的含金刚石的涂层可用任意所知的涂覆技术来沉积到所希望的表面上，如热喷涂，等离子体喷涂，化学气相沉积，升华，激光蒸发，溅射，溅射沉积，离子束涂层，喷敷涂层，浸镀，蒸发，辊涂，毛刷涂层等。还希望将一层或多层含金刚石的涂层与或者不与其它材料的中间层一起用任意适宜的技术沉积到所希望的表面上。
在本发明的一个可选的方面，提供一种由含金刚石的材料制成的半导体工艺设备部件。该部件可以包括传统地用于该设备的任意一种或者多种涂层。
通过使用本发明的含金刚石的涂层或者部件，优选的可获得一种超硬的，抗侵蚀的表面。在该涂层或者部件中，希望不含那些与工艺腔室气体反应的物质而且是化学惰性的，这样就有低的颗粒污染或者没有颗粒污染，轻微的腐蚀或者没有腐蚀，轻微的金属污染或者没有金属污染及/或少量的挥发性的刻蚀产物或者没有挥发性的刻蚀产物。
优选地，含金刚石的涂层或者部件放在那些可以或者不可以暴露在等离子体环境下的区域里，如直接与等离子体接触的部分或者腔室部件后面的部分，如衬里等，以防止在反应器腔室中处理的半导体衬底的金属污染。尤其优选的是要限制或者排除过渡金属的尘埃；比如在周期表中的元素21到29(钪到铜)，39到47(钇到银)，57到79(镧到金)和所有从89(锕)往后的所知元素中的任意的一种或者多种元素。所以，本发明的一个优势就是通过抑制这些因侵蚀或者腐蚀而产生的尘埃，在沉积膜上减少了所不满意的刻蚀或者不希望的针状气孔的形成。
尽管已结合其具体的实施方案，对本发明进行了详细的描述，对本领域技术人员来讲，明显地，不脱离所附权利要求的范围，可进行多样的变化和改善，并可等价地采用。

Claims (31)

1.一种对半导体工艺设备部件表面进行涂层的方法，该方法包括：
(a)可选地，在半导体工艺设备部件表面沉积一个第一中间涂层；
(b)可选地，在上述第一中间涂层或者上述表面上沉积一个第二中间涂层；并
(c)在上述部件上沉积一个厚度至少为0.001英寸的含金刚石的涂层以形成一个抗侵蚀的外表面。
2.权利要求1中的涂层方法，其中所述部件的所述表面包含一种金属，陶瓷或者聚合物的表面。
3.权利要求2中的涂层方法，其中所述表面是阳极化铝。
4.权利要求1中的涂层方法，其中所述第一中间涂层是必需的。
5.权利要求4中的涂层方法，其中所述第一中间涂层包含一种金属，陶瓷或者聚合物的涂层。
6.权利要求1中的涂层方法，其中所述部件包含等离子体刻蚀腔室的腔室壁。
7.权利要求1中的涂层方法，进一步包含在所述部件上制备一个粗化表面，在该粗化表面上沉积所述含金刚石的涂层。
8.权利要求1中的涂层方法，其中所述含金刚石的涂层包括无定形的四面体碳。
9.权利要求1中的涂层方法，其中所述含金刚石的涂层包含至少一种除了金刚石或者类金刚石材料之外的其它材料。
10.权利要求9中的涂层方法，其中所述其它材料是金属，陶瓷或者聚合物。
11.权利要求10中的涂层方法，其中所述其它材料包括钛或者硅。
12.权利要求11中的涂层方法，其中所述其它材料包括碳化钛，硼化钛，氮化钛，碳化硅，硼化硅，氮化硅或其混合物。
13.权利要求9中的涂层方法，其中所述含金刚石的涂层用所述至少一种金刚石或类金刚石材料之外的其它材料进行掺杂。
14.权利要求9中的涂层方法，其中所述含金刚石的涂层是所述金刚石或类金刚石材料与所述金刚石或类金刚石材料之外的其它材料的复合材料形式。
15.权利要求1中的涂层方法，其中所述含金刚石的涂层通过化学气相沉积，等离子体喷涂，升华，激光蒸发，溅射，溅射沉积，离子束涂层，喷敷涂层，浸镀，蒸发涂层，辊涂或者毛刷涂层进行沉积。
16.一种半导体工艺设备部件，包含：
(a)一个表面；
(b)一个可选的在上述表面上的第一中间涂层；
(c)一个可选的在上述第一中间涂层或者上述表面上的第二中间涂层；及
(d)一个在上述部件上形成抗腐蚀外表面的厚度至少为0.001英寸的含金刚石的涂层。
17.权利要求16中的部件，其中所述表面是一种金属，陶瓷或者聚合物的表面。
18.权利要求17中的部件，其中所述表面是阳极化铝。
19.权利要求16中的部件，其中所述第一中间涂层是必需的。
20.权利要求16中的部件，其中所述部件包含等离子体刻蚀腔室的腔室壁。
21.权利要求12中的部件，其中所述含金刚石的涂层包括无定形的四面体碳。
22.权利要求16中的部件，其中所述含金刚石的涂层包含至少一种金刚石或类金刚石材料之外的其它材料。
23.权利要求22中的部件，其中所述其它材料是金属，陶瓷或者聚合物。
24.权利要求23中的部件，其中所述其它材料包括钛或者硅。
25.权利要求24中的部件，其中所述其它材料包括碳化钛，硼化钛，氮化钛，碳化硅，硼化硅，氮化硅或其混合物。
26.权利要求22中的部件，其中所述含金刚石的涂层用所述至少一种金刚石或类金刚石材料之外的其它材料进行掺杂。
27.权利要求22中的部件，其中所述含金刚石的涂层是所述金刚石或类金刚石材料与所述金刚石或类金刚石材料之外的其它材料的复合材料形式。
28.权利要求16中的部件，进一步包含一个或多个附加的含金刚石的涂层或者中间涂层。
29.权利要求16中的部件，其中金刚石或类金刚石材料在所述含金刚石的涂层内形成连续的基体相。
30.一种半导体工艺设备部件，在该设备中至少有一个表面暴露在等离子体中，该部件包括在该设备中由含金刚石的材料制成的暴露在等离子体中的厚度至少为0.001英寸的表面。
31.权利要求30中的部件，其中所述整个部件由所述含金刚石的材料制成。
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