CN1870863B - 便携式电子装置外壳及其制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 238000000465 moulding Methods 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims description 21
- 229910003460 diamond Inorganic materials 0.000 claims description 21
- 239000010432 diamond Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 238000005546 reactive sputtering Methods 0.000 claims description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 10
- 150000002430 hydrocarbons Chemical class 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 150000001398 aluminium Chemical class 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims description 5
- 238000002048 anodisation reaction Methods 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
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- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims description 2
- 239000008151 electrolyte solution Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000008246 gaseous mixture Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
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- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
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- 238000009713 electroplating Methods 0.000 description 3
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- 150000003839 salts Chemical class 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- -1 aqueous vapor Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910007567 Zn-Ni Inorganic materials 0.000 description 1
- 229910007614 Zn—Ni Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
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- 239000002131 composite material Substances 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
本发明是关于一种便携式电子装置外壳,包括一铝基材、一氧化铝膜层及一类金刚石薄膜层,该氧化铝膜层形成于该铝基材的表面,该类金刚石薄膜层形成于该氧化铝膜层的表面。一种便携式电子装置外壳的制作方法,包括以下步骤:提供一成型的铝基材;将该铝基材放入阳极处理液中进行阳极处理,形成一氧化铝膜层;于该氧化铝膜层表面沉积一层类金刚石薄膜层。
Description
【技术领域】
本发明是关于一种便携式电子装置外壳及其制作方法。
【背景技术】
随着信息科技的迅速发展,便携式电子装置如笔记型电脑(notebook)、个人数字助理(PDA)、移动电话等普及率日益升高,因此这些电子装置外壳的美观程度及触觉效果也愈来愈受到人们的关注与重视。现有的便携式电子装置大部份采用塑料外壳,而为使塑料外壳更加美观及更具抗磨损性,射出成型后还要经过电镀或烤漆等进一步处理工序。如美国专利第4,350,739号,其是采用在射入塑料树脂前于模腔内壁喷涂涂料,而该涂料层与后期射入的塑料结合而形成装饰层。但是经过模内喷涂处理过的塑料外壳表面较硬,手感不佳,而且若要使其表面具有图案花纹等,将使得制造加工更加复杂,成本更高。再如美国专利第5,123,988号,其是采用在挤压成型橡胶基体后,在其表面涂上黏结剂,将一层黏结层通过硫化使其与基体结合,再将具有黏结层的软质材料压到基体上,加热融化黏结层使二者结合在一起,形成具有布状表面的橡胶。但是现有的塑料外壳本身的强度较低,其表面的烤漆也较易磨损,且其制造工序较复杂。
铁、铝等金属材料因为具有优良的加工性能,而广泛应用于诸多领域。但是,铝材由于硬度低、耐磨性差,而铁件暴露在空气中则容易被腐蚀,因而在使用前需要进行电镀、烤漆等功能性或装饰性处理,以弥补材料自身的缺陷。如美国专利第5,783,313号即揭示了一种在金属基体表面形成镍、钯、钼的复合镀层,以提高基体表面的亮度和耐磨性的电镀方法;而中国专利CN1030851A号则通过电镀Zn-Ni合金的方法提高金属材料的抗腐蚀性能。目前,便携式电子装置等许多具有金属壳体的产品一般通过烤漆制程提高表面质量。
但是,上述电镀、烤漆等制程处理后,便携式电子装置外壳表面品质虽有所改善,但是这些产品多为日常用品,与人体经常接触,特别是与手指接触时会在表面留下清晰的指纹。众所周知,指纹中含有水、灰尘、盐等腐蚀性物质,不仅影响美观,久而久之,会加速表面的锈蚀,而且在使用过程中需要定期对表面进行擦拭、清洗等工作来清除指纹,造成不便。
【发明内容】
鉴于上述状况,有必要提供一种制造较为简单、具有良好耐磨性能及耐腐蚀性能的便携式电子装置外壳。
另,有必要提供一种便携式电子装置外壳的制作方法。
一种便携式电子装置外壳,包括一铝基材、一氧化铝膜层及一类金刚石薄膜层,该氧化铝膜层形成于该铝基材的表面,该类金刚石薄膜层形成于该氧化铝膜层的表面。
一种便携式电子装置外壳的制作方法,包括以下步骤:
提供一成型的铝基材;
将该铝基材放入阳极处理液中进行阳极处理,形成一氧化铝膜层;
于该氧化铝膜层表面沉积一层类金刚石薄膜层。
相较现有技术,该便携式电子装置外壳的铝基材表面阳极处理后形成一层阳极处理层,然后于该阳极处理层表面表面沉积一层类金刚石薄膜层,该阳极处理层具有很强的硬度及耐磨性,可提高铝基材表面的性质,且通过铝基材表面生成的阳极处理层及类金刚石薄膜层具有良好的耐磨性能及耐腐蚀性能,可防止外界的水气、灰尘及盐等成份的腐蚀,亦可抵制尖物或硬物的刻划及磨损。
【附图说明】
图1是本发明便携式电子装置外壳较佳实施例的立体示意图。
图2是本发明便携式电子装置外壳较佳实施例的结构示意图。
【具体实施方式】
本发明的便携式电子装置外壳适用于笔记型电脑、移动电话、PDA、数码相机等便携式电子装置。
参照图1及图2所示,本发明的便携式电子装置外壳1包括铝基材10、氧化铝膜层20及类金刚石薄膜层30,其中该氧化铝膜层20形成于铝基材10表面,且该氧化铝膜层20表面形成有一类金刚石薄膜层30。
该氧化铝膜层20是铝基材10表面经阳极处理而形成的阳极处理层,该氧化铝膜层20的较佳厚度为10-200纳米,更佳的厚度应为50-100纳米。该类金刚石薄膜层30的材料可为非结晶碳氢(a-C:H)、非结晶碳氮(a-C:N)或非结晶碳氢氮(a-CNH),该三种材料均具有类金刚石结构的原子结合方式。该类金刚石薄膜层30的较佳厚度为10-100纳米,更佳的厚度应为20-60纳米。
该便携式电子装置外壳1的制作方法包括以下步骤:
提供一成型的铝基材10;
将该铝基材10放入阳极处理液中进行阳极处理,形成一氧化铝膜层20;
于该氧化铝膜层20表面沉积一层类金刚石薄膜层30。
其中该成型的铝基材10是通过冲压成型等技术所成型,其具有便携式电子装置外壳的形状。
该铝基材10进行阳极处理的阳极处理液可为果酸电解液,亦可为柠檬酸、酒石酸及苹果酸的混合电解液,当然亦可为其它现有的阳极处理液。
该类金刚石薄膜层30的材料可为非结晶碳氢、非结晶碳氮或非结晶碳氢氮。
当该类金刚石薄膜层30的材料为非结晶碳氢时,其可由反应性溅射或化学气相沉积法所沉积,该反应性溅射是指现有的直流、交流或射频反应性溅射。反应性溅射采用的溅射气体为氩气与氢气的混合气、氩气与甲烷的混合气、或氩气与乙烷的混合气,溅射靶材为石墨。在氩气与氢气的混合气中,氢气含量为20%左右,在氩气与甲烷的混合气中,甲烷含量为20%左右,在氩气与乙烷的混合气中,乙烷含量为20%左右。其中上述溅射气体中的氩气亦可为其它惰性气体所代替,如氪气等。
当该类金刚石薄膜层30的材料为非结晶碳氮时,其亦可由反应性溅射或化学气相沉积法所沉积,该反应性溅射是指现有的直流、交流或射频反应性溅射。反应性溅射采用的溅射气体为氩气与氮气的混合气,溅射靶材为石墨。其中所述溅射气体中的氩气亦可为其它惰性气体所代替,如氪气等。
当该类金刚石薄膜层30的材料为非结晶碳氢氮时,其亦可由反应性溅射或化学气相沉积法所沉积,该反应性溅射是指现有的直流、交流或射频反应性溅射。反应性溅射采用的溅射气体为氢气与氮气的混合气,溅射靶材为石墨。
该便携式电子装置外壳1具有良好的耐磨性能及耐腐蚀性能,可防止外界的水气、灰尘及盐等成份的腐蚀,亦可抵制尖物或硬物的刻划及磨损。
Claims (10)
1.一种便携式电子装置外壳,其特征在于:其包括一铝基材、一氧化铝膜层及一类金刚石薄膜层,该氧化铝膜层形成于该铝基材的表面,该类金刚石薄膜层形成于该氧化铝膜层的表面。
2.如权利要求1所述的便携式电子装置外壳,其特征在于:所述氧化铝膜层是铝基材表面经阳极处理而形成的阳极处理层。
3.如权利要求1所述的便携式电子装置外壳,其特征在于:所述类金刚石薄膜层的材料为非结晶碳氢、非结晶碳氮或非结晶碳氢氮。
4.如权利要求1所述的便携式电子装置外壳,其特征在于:所述氧化铝膜层的厚度为10-200纳米。
5.如权利要求1所述的便携式电子装置外壳,其特征在于:所述类金刚石薄膜层的厚度为10-100纳米。
6.一种便携式电子装置外壳的制作方法,其特征在于:其包括以下步骤:
提供一成型的铝基材;
将该铝基材放入阳极处理液中进行阳极处理,形成一氧化铝膜层;
于该氧化铝膜层表面沉积一层类金刚石薄膜层。
7.如权利要求6所述的便携式电子装置外壳的制作方法,其特征在于:阳极处理时采用柠檬酸、酒石酸及苹果酸的混合电解液或果酸电解液为阳极处理液。
8.如权利要求6所述的便携式电子装置外壳的制作方法,其特征在于:所述类金刚石薄膜的材料为非结晶碳氢、非结晶碳氮或非结晶碳氢氮。
9.如权利要求6所述的便携式电子装置外壳的制作方法,其特征在于:所述类金刚石薄膜是采用反应性溅射或化学气相沉积法所沉积。
10.如权利要求9所述的便携式电子装置外壳的制作方法,其特征在于:所述反应性溅射是直流、交流或射频反应性溅射。
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CN102534611A (zh) * | 2010-12-27 | 2012-07-04 | 鸿富锦精密工业(深圳)有限公司 | 壳体及其制造方法 |
CN102732824A (zh) * | 2011-03-31 | 2012-10-17 | 鸿富锦精密工业(深圳)有限公司 | 壳体及其制造方法 |
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