TWI267563B - Diamond coatings on reactor wall and method of manufacturing thereof - Google Patents

Diamond coatings on reactor wall and method of manufacturing thereof Download PDF

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TWI267563B
TWI267563B TW90130003A TW90130003A TWI267563B TW I267563 B TWI267563 B TW I267563B TW 90130003 A TW90130003 A TW 90130003A TW 90130003 A TW90130003 A TW 90130003A TW I267563 B TWI267563 B TW I267563B
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diamond
coating
component
coating method
patent application
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TW90130003A
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Robert J O'donnell
Christopher C Chang
John E Daugherty
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Lam Res Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0053—Details of the reactor
    • B01J19/0073—Sealings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0231—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)

Description

A7 B7 1267563 五、發明説明（1 ) 發明背景 1. 發明領域 本發明係關於一種半導體加工設備及改善該組件腐蝕抗 性之方法。 2. 相關技藝之敘述 半導體加工之領域中，一般均使用眞空加工室，藉由供 給蝕刻或沉積氣體於眞空室中，且施加RF電場於氣體，對 氣體施加能量成爲電漿態’蝕刻且化學蒸氣沉積（CVD)基 材上之物質。平行板、變壓器耦合電漿（TCPTM)(其亦稱之 爲謗發性耦合電漿（ICP)，及電子-粒子迴旋加速器共振 (ECR)反應器及其组件之實例揭示於美國專利第4,340,402; 4,948,458; 5,200,232及5,820,723中。因爲該反應器中電漿 環境之腐蝕性質，及最小粒徑之需求及/或重金屬污染’該 設備之組件極需要呈現高的腐蝕抗性。 半導體基材之加工過程中，基材一般均以基材固定器如 機械夾具及靜電夾具（ESC)固定於眞空室中。該夾具系統及 其組件之實例可見於美國專利第5,262,029及5,838,529號中 。加工氣體可以以各種方式如氣體喷嘴、氣體環、氣體分 布盤等加於室中。謗發性耦合之電漿反應器及其組件之溫 度控制氣體分布盤之實例見於美國專利第5,863,376號中。 除電漿室設備外，半導體基材加工用之其他設備包含傳輸 機構、氣體供給系統、内襯、升降機構、負荷鎖、門機構 、機械臂、固定器、等。該設備之組件會因半導體加工而 遭遇各種腐蚀條件。另外，對於半導體基材如碎晶圓’及 •4 本紙張中國國家標準(CNS) Α4規格(210X 297公釐) 裝 訂
線 1267563 A7 B7 五、發明説明（2 ) 介電材料如用於平板顯示器之玻璃基材之加工高純度要求 之觀點，在該環境下極需要具有改良腐蝕抗性之組件。 電漿反應器之壁、電極、基材支撐材、固定器及其他組 件一般均使用链及鋁合金。爲避免各金屬組件腐钱，曾提 出各種技術以各種塗料塗佈鋁之表面。例如，美國專利第 5,641，375號揭示經陽極化，以降低電漿腐蝕及壁磨損之鋁 室壁。’375專利敘述濺射或蝕刻最終之陽極化層，且須取 代室。美國專利第5,895,586號列出日本申請案公開第62-103379號中在鋁材料上形成Al2〇3，A1C，TiN，TiC，A1N等之 抗腐蝕薄膜之技術。 美國專利第5,680,013號列出在美國專利第4,491，496號中 揭示之蚀刻室之金屬表面上火焰噴佈八丨2〇3技術。該，〇13號 專利列出鋁及陶瓷塗層如氧化鋁間熱膨脹係數之差異，使 之因熱循環導致龜裂，最後使塗層在腐蝕環境中受損。爲 保濩室壁，美國專利第5,366,585、5,798,016及5,885,356號 提出内襯排列》例如，016號專利揭示陶瓷、鋁、鋼及/或石 英内襯，且針對機械加工性之難易以鋁較佳，且對於塗佈 鋁以提供鋁對電漿之保護，較好爲具有氧化鋁、Sc2〇3或 丫2〇3之塗層，且以氧化鋁較佳。，585專利揭示厚度至少爲 0.005封且由固態氧㈣機製之固定式陶⑥内襯。，585專 利亦提出可藉由火焰喷佈或電衆喷佈氧化銘在不消耗下層 銘下沉積陶竞層之應用。，356專利揭示氧化銘陶是内觀及 晶圓柱用之淡化銘陶瓷保缚差 充休邊美國專利第5,885,356號揭示 CVD室用之陶资内襯材料。 1267563 A7 B7 五 發明説明（3 各種塗層已被提出用於半導體加工設備用之金屬組件。 美國專利第5,879,523號揭示濺射室，其中氧化鋁之熱濺射 塗佈係以其間之選用NiAlx結合塗層塗佈於不銹鋼或鋁金屬 上。美國專利第5,522,932號及589，153號揭示其間具有選用 之鎳塗層之基材電漿加工用之裝置之金屬組件用之鍺塗層 。美國專利第5,680,013號揭示電漿加工室中之金屬表面用 之未鍵結陶瓷保護，較佳之陶瓷材料爲燒結之AIN，次佳 之材料包含氧化鋁、氟化鎂及氧化鎂。美國專利第 5,904,778號揭示用作室壁、室保護或環繞晶圓之c〇llar之固 定SiC上之SiCCVD塗層。 關於電漿反應器組件如噴霧頭氣體分佈系統，已針對喷 霧頭之材料提出各種提案。例如，美國專利第5,569,356號 揭示矽、石墨或碳化矽之喷頭。美國專利第5,494,713號揭 示在銘電極上形成之耐酸链薄膜，及在耐酸銘薄膜上之梦 塗層膜如氧化碎或氮化梦。’713號專利列出石夕塗層膜之厚 度應爲10微米或更低，較好約5微米，因爲鋁塗層膜、耐 酸鋁塗層膜及矽塗層膜具有不同之内襯膨脹係數，且在矽 塗層膜之厚度太厚時容易造成龜裂。然而，厚度低於5微米 並不適當，因爲對鋁基材之保護不足。美國專利第4,534,516 號揭示不銹鋼、鋁、銅等之上噴頭電極。美國專利第 4,612,077號揭示一種鎂之噴頭電極。美國專利第5,888,907 號揭示一種無定型碳、SiC或A1之噴頭電極。美國專利第 5,006,220號及5,022,979號揭示一種全部由SiC製成，或以碳 爲基礎藉由CVD沉積塗佈SiC得到高純度SiC表面層之噴頭 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
裝 訂
1267563 A7 B7 五、發明説明（4 ) 電極。 美國專利第5,952,060號敘述使用以碳爲主之塗層以保護 基材加工系統之内部室。該碳爲主之塗層爲厚度在丨微米至 5 0微米間之鑽石或似鑽石之碳塗層。美國專利第5，g 12,362 號敘述在靜電刷上使用鑽石薄膜，其中之鑽石薄膜之厚度 爲5至5 0微米。各此等專利均揭示選擇性的使用極薄之鑽 石與似鑽石之塗層。
其他專利如美國專利第 5,308,661 ,· 5,393,572，· 5,846,613; 5,989,511及6,015,597亦揭示鑽石或似鑽石之塗層。此等專 利中並沒有一專利敘述在電漿反應器中使用該塗層。 裝 針對半導體加工設備之組件用之高純度及腐蝕抗性之需 求，技藝中需要對該組件所用之材料及/或塗層進行改良。 再者，關於室之材料，任一種可增加電漿反應器室之使用 訂
壽命，且因此降低裝置之停工期之材料均可有利的用於降 低半導體晶圓之加工成本。 發明概要 依據本發明之第一目的爲在半導體加工設備組件之表面 上提供一種含抗腐蝕鑽石或含似鑽石塗層之方法。該方法 包含使鑽石或含似鑽石之塗層沉積在加工設備組件之表面 上，以形成抗外部腐蝕之表面。抗腐蝕之表面意指可保護 下層之材料免受％漿至乳體之腐蝕作用，同時使塗層可抗 電漿室氣體之腐蝕。欲塗佈之製程設備組件之下表面可包 括金屬、㈣或聚合物材料，且較佳之材料爲陽極化之铭
1267563
較佳具_中，τ在半導體加工設備之表面&绩石或含 似缚石塗層之間使用_或多層之中間金屬、陶t或聚合物 塗層。可塗佈之金屬表面包含電漿室中所用之陽極化或未 陽極化ι鋁、不銹鋼、耐火金屬如鉬或其他金屬或合金。 :塗佈之金屬表面包含氧化鋁、Sic、αιν、_4、bc或他 電漿可相容之陶瓷材料。可塗佈之聚合物表面包含氟聚合 物，如Teflon®，聚亞醯胺如Vespel®及其他在溫度低於2〇〇 C下於電漿室中使用之聚合物材料。 依據本發明之目的係提供一種金屬組件。該組件包含： (a)金屬表面；金屬表面上選用之第一種中間塗層； (c)在第一中間物塗層上或在金屬表面上選用之第二種中 間塗層；及在該組件上之鑽石或含似鑽石之塗層，其可提 供抗腐蝕之外表面。第一及第二中間塗層之各層可爲金屬 或其合金、陶瓷、聚合物或電漿室反應器中所用之 混合物或複合材。 依據本發明另一目的係提供一種由鑽石或含似鑽石材料 製成之半導體加工設備組件。該組件可包含任一或多層之 該設備中用之塗層。 附圖之簡要敘沭 本發明之目的及優點由下列其較佳具體例之詳細敘述配 合附圖將變得顯而易見，其中： 圖1爲具有塗佈本發明抗腐蚀塗層組件之電衆反應器室之 簡要剖面圖。 圖2詳細顯示圖1之抗腐蝕塗層之細節。 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1267563 A7 _____B7 五、發明説明（6 ) 本發明較佳具體例之詳細敘述 本發明提供一種有效之方法，該方法係藉由使用抗腐蝕 塗層對半導體加工裝置，如電漿加工反應器室之組件之金 屬、陶瓷及聚合物表面提供腐蝕抗性。該組件包含室壁、 基材支撐物、包含喷頭、檔板、環、喷嘴等之氣體分散系 統、固定器、加熱元件、電漿濾網、内襯、傳輸模組組件 、如機械臂、固定器、室之内及外壁，等。 雖然本發明用於可用於具有金屬、陶瓷或聚合物表面之 任一類型組件，但爲方便説明起見，本發明將參考美國專 利第5,820,723號中敘述之裝置詳細説明，該專利在此提出 供參考。 圖1説明眞空加工反應器室10，包含對基材60提供靜電 夾緊力以及對基材提供RF偏斜同時以He回冷卻之基材支 撐器70。聚集環72將電漿圍在基材60上之區域中。使室中 之電漿維持南密度（例如10^-1012離子/ cm3 )之能量源，如 以適當之R F電源施加電力以提供高密度電衆之天線4 〇係配 置在反應器室10之上方。該室包含藉由中心配置在室之底 部之眞空抽空槽20將反應室抽眞空，使室之内部3〇維持在 所需壓力（例如低於50 mTorr，一般爲le2〇 mT〇rr)i適用眞 空泵浦裝置。 裝置在天線40及加工室10之間之均勻厚度之實質平面之 介電視窗50在加工室10之上方形成眞空壁。視窗2q之下方 裝置乱體分佈板52 ’且包含開口如圓形之洞，以輸送氣體 供給室之加工氣體到達室10中。圓錐形内襯54自氣體分佈
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板延伸，且環繞基材支撐材7〇。 操作時，係將半導體基材如矽晶圓6〇置於基材支撐材7〇 (上，且一般係藉由靜電夾具74固定，同時使用He回冷。 接著藉由使製程氣體通過視窗5 〇及氣體分佈板5 2間之間隙 ，將加工氣體供給至眞空加工室10中。適當之氣體分散板 排列（亦即噴頭）係揭示於美國專利第5 824 6〇5; 6 〇48,798; 及5,863,376號中，該揭示均在此提出供參考。例如，雖然 圖1中之視窗及氣體分散板排列爲平面且厚度均勻，但非平 面及/或不均勻厚度之形狀亦可用作視窗及/或玻璃分散板 。藉由對天線40施加適當之RF電力激發基材及視窗間之空 間中之高密度電漿。 室壁28如陽極化或未經陽極化之鋁壁及金屬、陶瓷或聚 合物組件如基材支撐材7〇、固定件56、内襯54等（其均暴 露於電漿中且呈現腐蝕現象）均可依本發明塗佈，因此可避 免在電漿室操作過程中需將其遮蔽。可塗佈之金屬及/或合 金之實例包含陽極化或未經陽極化之鋁及其合金、不銹鋼 、耐火金屬如W及Mo及其合金、銅及其合金等。可塗佈之 陶瓷表面實例包含氧化鋁、sic，A1N，Si3N4, BC及Ti〇2。市 售可塗佈之聚合物材料實例包含氟聚合物如丁en〇n®，聚亞 醯胺如Vespel®及其他在溫度達2〇〇°C時用於電漿室中之聚 合物材料。較佳具體例中，欲塗佈之組件爲具有陽極化或 未將陽極化鋁表面29之室壁28。本發明之塗層可使用鋁合 金，不管其組成（因此除高純度鋁外，可使用更經濟之鋁合 金）、晶粒結構或表面條件。下列敘述中，欲塗佈組件之實 -10- 本纸張尺度適用中國國家標準(CNS) A4規格(21〇X297公釐) 1267563
例爲具有第一選用之中間塗層80、第^選用之中間塗層90 及含鑽石之塗層100之鋁反應室壁28，如圖2中之説明。 爲確保塗佈材料之良好黏著，鋁基材28之表面在塗佈前 較好充刀的π潔，以移除表面物質如氧化物或油脂。另外 ，最好使基材表面變粗糙，使基材表面陽極化，且在塗佈 任一所需塗層前使陽極化之基材表面變粗。 依據本發明，第一中間塗層8〇可以以一般技術，視情況 塗佈在鋁側壁2 8上。選用之第一中間塗層8 〇足夠厚以便附 著於基材上，且在形成選用之第二中間塗層9〇或下述之含 鑽石塗層之前進一步加工。第一中間塗層8〇可具有任一適 當之厚度如厚度至少約0·001英吋，較好爲約〇 〇〇1至約〇 25 英叶’更好在0.001至0 1英吋之間，且最好爲〇〇〇1至〇 〇5 英忖。 將選用之第一中間塗層8〇沉積在鋁基材28上之後，可以 以任一適用之技術使電鍍終止或變粗，接著覆蓋塗佈第二 選用之塗層90或含鑽石之塗層100〇打粗之層8()提供特別 好之結合。期望上，第二中間塗層9 〇對塗層8 〇賦予高的機 械壓縮強度，且使塗層90中裂缝之形成爲最小。 選用之第二中間塗層90夠厚以黏著第一中間塗層8〇，且 再形成任一額外之中間塗層或下述之外部含鑽石或似鑽石 塗層100之前進一步加工。第二中間塗層90可具有任一適 當之厚度如厚度至少爲約0.001英吋，較好爲約〇 〇〇1至約 0.25英吋，更好在0·〇〇1至〇·1英吋之間，且最好爲〇〇〇1至 0.05英吋。 -11 · 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 1267563
弟 中所用之材料^塗層可由任一種或多種一般電漿加工室 物。最佳之含=材料之實例包含金屬、陶資及聚合 複合材或合全種或多種耐火金屬、含該金屬之 A1N Ti0 菩 \ 〈陶资包含 Al2〇3, SiC，礼IBC， 亞醯胺4 1 °取佳〈聚合物包含氟聚合物如Teflon<"，聚 espel<"，及其他在溫度達2〇o°c時用於電漿室中 口材料。可用作中間層之特殊材料亦包含含填料之 二u其他硬質碳之材料如鑽石及似鑽石之材料；例如 給姮、鈇及/或石夕之碳化物、硼化物、氮化物及/或碳氮 物灭化硼，氮化硼；碳氮化硼；氧化結，·氧化釔或任 一上述材料之混合物。 期望選用之第一及第二中間層80及90爲上述材料之任一 種，使塗層依所需之性質爲相同或不同。亦期望可使用相 同或不同材料之額外中間塗層如第三、第四或第五中間塗 層0 含鑽石之塗層100沉積在選用之第二中間塗層90上，或在 選用之第一中間塗層80上，或在鋁基材28上。含鑽石塗層 之厚度期望至少爲0.001英吋，較好爲約0.001至約025英吋 ，更好在0.001至0.1英吋之間，且最好爲0·001至0 05英叶 。最希望者爲鑽石或似鑽石之塗層之厚度係用於對下層， 尤其是對基材提供暴露於腐蝕之室氣體下之明顯時段之侵 蝕及/或腐蝕保護。更好，塗層均等於或大於0.001英吋， 且最好在約0.002至0.010英吋厚之間。含鑽石或似鑽石之塗 層100可經選擇使之與反應器中遇到之電漿環境（例如蝕刻 件CVf等）相容。該讀石之層可塗佈在上述反 件〈全部或部分上。 主戎組 。靖石〈塗層在本文中意指含鑽石或似鑽石材料之 。似罐石之材料爲具有許多靖石性質，但並非全部性= 以碳爲主之材料。此等材料包含無定型碳、硬質碳、及α· 碳。較佳之似辨石材料爲硬度超過鑽石硬度之，較: ,過鑽石硬度之7〇%之非結晶碳材料。所有此種意指鑽石 或似鑽石之塗層此後通稱之爲含鑽石之塗層。 針對所需之厚度，最好使用經掺雜或與其他保護材料昆 合之讀石塗層，使得含鑽石之塗層爲费石或似鑽石材二 及其他㈣用材料之複合材/該材料可包含任_種或多種 用於-般電漿加王室中所用之材料。該材料之實例包含任 一種或多種金屬、陶资及聚合物。最佳之金屬包含任二種 或多種耐火金屬含該金屬之複合材或合金。最佳之陶资包 fAl203, SiC，Si3N4, BC，Am, Ti〇e。最佳之聚合物包含 氟聚合物如Teflon®、聚亞醯胺如Vespel®及在達到2〇〇ec之 狐度下可用於電漿室中之其他聚合物材料。相信大部分所 需之材料將單獨包含鑽石或似鑽石之材料；例如給、妲、 鈦及/或矽之碳化物、硼化物、氮化物及/或碳氮化物；碳 化硼；氮化硼；碳氮化硼；氧化鲒；氧化釔或任一上述材 料之混合物。 如上述，本發明之含鑽石塗層可以以其他保護性材料摻 雜。其他保濩性材料之摻雜濃度較好低於或等於鑽石塗層 之1重量％，更好在鑽石塗層之約100叩111至i重量％之間， 1267563 A7
且最好在鑽石塗層之約〇 〇〇1至〇丨重量％之間。 本發明之含鑽石塗層亦可爲具有其他保護材料之複合材 。所需之複合材具有含鑽石塗層之連續基質相。其他保護 材料之複合材濃度需要大於塗層重量％，更好爲塗 層心約2 0至8 0 %，且最好爲塗層之約4 〇至6 〇 %。部分例中 (尤其是成本特別重要之例），鑽石或似鑽石之塗層％極低 ，例如低於塗層之2〇、1〇、5及1重量。/。。 一
本發明之含鑽石塗層可藉由已知之塗佈技術，如熱噴佈 、電漿噴佈，化學蒸氣沉積、昇華、雷射蒸發、濺、、濺 射沉積、離子束塗佈、喷霧塗佈、浸潰塗佈、蒸發、滾塗 '刷塗、等沉積在所需表面上。期望具有或不含其他材料 裝 心中間層之一或多層含鑽石塗層使用該以之方法沉積在所 需表面上。 訂 依本發明之另一目的係提供一種由含鑽石材料製成之半 導體加工設備組件。該組件可包含一般用於該組件中之一 或多層塗層。 藉由使用本發明之含鑽石塗層或組件，較好得到超硬、 抗腐蚀之表面。該塗層或組件較好不含與加工室氣體反應 之材料，且爲化學惰性，使其顆粒污染低或沒有，腐蝕低 或沒有、金屬之污染低或沒有，及/或揮發性石刻產物少或 沒有。 較好含鑽石之塗層或組件至於會或不會暴露在電漿環境 中之區域，如零件與電漿直接接觸，或零件在室組件之中 如内槪寺，以避免在反應器室中加工之半導體基材受到 -14· 本紙張尺度逋用中國國家標準(CNS) A4規格(210 X 297公釐) 1267563 A7 B7 五、發明説明〇2 ) 金屬之/亏染。取好限制或排除過度金屬之粉塵；例如週期 表中元素21至29(钪至銅）、39至47(釔至銀）、57至79(鑭 至金）及自89(4可）之所有已知元素之一種或多種。因此，依 據本發明之一優點，可藉由壓制侵蝕或腐蝕形成之該粉麈 降低沉積之薄膜中不滿意之蝕刻或不希望形成之針孔。 雖然本發明已經參考其特定之具體例詳細敘述，但熟習 本技藝者應了解可進行各種改變及改良及使用對等物，且 均不離本發明之範圍。 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)

Claims (1)

  1. I267|65i3〇〇〇3號專利申請案 Α8 中文申請專利範圍替換本车7 EM S
    其中該組件知該表 其中該表面為陽極 2 ·如申請專利範園第1項之塗佈方法 面包括金屬、陶瓷或聚合物表面。 3 ·如申請專利範圍第2項之塗佈方法 化之銘。 4 ·如申請專利範圍第1項之塗佈方法，其中一層第一中間 塗層係於表面上。 其中該第一中間塗 其中該組件包括電 5 ·如申請專利範圍第4項之塗佈方法 層包括金屬、陶瓷或聚合物塗層。 6·如申請專利範圍第1項之塗佈方法 漿蚀刻室之室壁。 7. 如申請專利範圍第i項之塗佈方法，尚包括在該組件上 形成粗糖表面該含鑽石纟材料沉積在該粗链表面之 8. 如申請專利範圍第i項之塗饰方法，其中該含鑽石之材 料包括無定型四面形碳。 9·如中請專利範圍第i項之塗佈方法’其中該含鑽石之材 料包括至少一種除鑽石及似鑽石材料以外之材料。 .如申請專利範圍第9項之塗佈方法’其中該其他材料為 反射金屬或聚合物。 U·如"專·圍第1G項之塗佈方法，其中該其他材料包 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 1267563 A8 B8 C8 D8 申請專利範圍 含鈦或矽。 12. 如申請專利範圍第n項之塗佈方法，其中該其他材料包 含碳化鈦、硼化鈦、氮化鈦、碳化矽、硼化矽、氮化矽 或其混合物。 13. 如申請專利範圍第9項之塗佈方法’其中該含鑽石之材 料係以該至少一種其它材料摻雜。 Μ.如申請專利範圍第9項之塗佈方法，其中該含鑽石之材 料為鑽石或似鑽石材料及該其它材料之複合材形式。 15·如申請專鄉圍第！項之塗佈方法，其中該含鑽石之材 料係以化學蒸氣沉積、電漿噴佈、昇華、雷射蒸發、嘰 射；濺射沉積、離子束塗佈、噴霧塗佈、浸潰塗佈、篆 發塗佈、滾動塗佈或刷塗沉積。 4 16· —種半導體加工設備之組件，其包括暴露於設備之電漿 中的含鑽石材料，該含鑽石材料具有厚度至少 付0 如申請專利範圍第16項之組件，其中該含鑽 手 置於一金屬、陶資或聚合物表面。 系佈 Κ如申請專利範圍第17項之組件，其中該表面為陽極化之 其中一層第一中間塗層 其中該組件包括電漿蝕 其中該含鑽石之材料包 1 9 ·如申請專利範圍第1 6項之組件 係於表面上。 2 〇 ·如申睛專利範圍第1 6項之組件， 刻室之室壁。 2 1 ·如申凊專利範圍第1 6項之組件 -2 - A8 B8 C8
    1267563 括無定型四面形碳。 2 2 ·如申凊專利範圍第i 6項之組件，其中八 括至少-種除_及_石材料以外石之材料包 2 3 ·如申清專利範圍第2 2項之組件， 、、 金屬或聚合物。 一孩其他材料為反射 24.如申請專利範圍第23項之組件，並 或矽。 ，、中邊其他材料包含鈦 2 5 ·如申請專利範圍第2 4項之組件，並―、 化献、硼化鈥、氮錢、他材料包含碳 混合物。 則匕矽、氦化梦或其 2 6 ·如申請專利範圍第丨6項之組件，其本 /、丫点δ鑽石之材料彳系 以至少一種其它材料摻雜。 可竹係 27.如申請專利範圍第22項之組件，其中該含攀石 为 鑽石或似鑽石材料及該至少-種除鑽石或似鑽石材料以 外之材料之複合材形式。 Μ.如申請專利範圍第16項之組件，尚包括一或多層 含鑽*石塗層。 29·如申請專利範圍第16項之組件，其中鑽石或似鑽石之材 料形成該含鑽石材料之連續基質相。 30.如申請專利範圍第16項之組件，其中該含鑽石材料包各 鑽石或似鑽石材料及20至80重量％之至少一種額外材^ 31.如申請專利範圍第16項之組件，其中該全部之組件係由 該含鑽石之材料製成。
    I267563 園 、申請專利範 2·:申請專利範圍第4項之塗佈方法，其另包括沉 夕層額外之中間塗層。 、或 •如申請專利範圍第19項之組件，其 之中間塗層。 ^ ^層頭外 • 請專利範圚第16項之組件，其中該含鑽石材料包含 4少一種其它材料，其係選自由反射金屬、聚合物、碳 物、氮化物、碳氮化物、氧化錐、氧化釔、Ti〇2及 A 1 2 0 3所組成之群。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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KR100853972B1 (ko) 2008-08-25
WO2002054454A3 (en) 2002-09-12
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EP1358363A2 (en) 2003-11-05
EP1358363B1 (en) 2008-07-16
KR20030063475A (ko) 2003-07-28
ATE401430T1 (de) 2008-08-15
JP2004526054A (ja) 2004-08-26
JP4358509B2 (ja) 2009-11-04
CN1284880C (zh) 2006-11-15
AU2002228604A1 (en) 2002-07-16
CN1488009A (zh) 2004-04-07
DE60134896D1 (de) 2008-08-28
US6537429B2 (en) 2003-03-25

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