CN116420220A - 具有互连结构的键合结构 - Google Patents

具有互连结构的键合结构 Download PDF

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Publication number
CN116420220A
CN116420220A CN202180071066.8A CN202180071066A CN116420220A CN 116420220 A CN116420220 A CN 116420220A CN 202180071066 A CN202180071066 A CN 202180071066A CN 116420220 A CN116420220 A CN 116420220A
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China
Prior art keywords
conductive
bonding
die
interconnect structure
pad
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CN202180071066.8A
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B·哈巴
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American Semiconductor Bonding Technology Co ltd
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American Semiconductor Bonding Technology Co ltd
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Publication of CN116420220A publication Critical patent/CN116420220A/zh
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Abstract

公开了一种键合结构。键合结构可以包括互连结构，该互连结构具有第一侧和与第一侧相对的第二侧。键合结构还可以包括安装到互连结构的第一侧的第一管芯。第一管芯可以在没有中间粘合剂的情况下直接键合到互连结构。键合结构还可以包括安装到互连结构的第一侧的第二管芯。键合结构还可以包括安装到互连结构的第二侧的元件。第一管芯和第二管芯通过至少互连结构和该元件电连接。

Description

具有互连结构的键合结构
相关申请的交叉引用
本申请要求于2020年9月4日提交的题为“BONDED STRUCTURE WITH INTERCONNECTSTRUCTURE”的美国临时专利申请第63/075,038号的优先权，该申请的全部内容通过引用并入本文。
技术领域
本领域总体上涉及键合结构，并且具体地涉及具有互连结构的键合结构。
背景技术
电子组件可以连接到再分布层(RDL)，该RDL可以包括导电路由迹线，导电路由迹线用于在电子组件的覆盖区之外横向地路由信号。RDL可以通过沉积工艺形成在电子组件上。当RDL被形成时，在RDL的导电部分与电子组件的接触焊盘之间可能存在未对准。因此，仍然需要用于制造电子组件的改进的结构和方法。
附图说明
现在将参考以下附图来描述具体实现，这些附图是通过示例而非限制的方式提供的。
图1A示出了集成器件管芯和多个元件在安装到互连结构之前的示意性侧视图。
图1B示出了根据一个实施例的键合结构的示意性横截面侧视图。
图2A示出了根据一个实施例的制造键合结构的工艺中的一个步骤。
图2B示出了在图2A之后制造键合结构的过程中的另一步骤。
图2C示出了在图2B之后制造键合结构的过程中的另一步骤。
图2D示出了在图2C之后制造键合结构的过程中的另一步骤。
图2E示出了在图2D之后制造键合结构的过程中的另一步骤。
图3A示出了根据另一实施例的制造键合结构的工艺中的一个步骤。
图3B示出了在图3A之后制造键合结构的过程中的另一步骤。
图3C示出了在图3B之后制造键合结构的过程中的另一步骤。
图3D示出了在图3C之后制造键合结构的过程中的另一步骤。
图3E示出了在图3D之后制造键合结构的过程中的另一步骤。
图4示出了根据另一实施例的键合结构的示意性横截面侧视图。
图5是根据各种实施例的包括一个或多个微电子组件的系统的示意图。
具体实施方式
集成器件封装可以使用再分布层(RDL)将信号从封装中的一个或多个集成器件管芯再分布到其他器件(例如，在集成器件管芯的覆盖区之外的其他器件)。例如，扇出再分布可以将信号从集成器件管芯的精细节距的键合焊盘传送到与管芯地横向间隔开的其他器件。在一些实现中，扇出RDL可以将信号从管芯传送到被配置为连接到系统板(例如，印刷电路板或PCB)的引线或接触焊盘。在一些实现中，扇出RDL可以将信号从管芯传送到其他器件，诸如其他集成器件管芯等。在包括多个集成器件管芯的一些封装中，管芯可以安装到牺牲载体，并且模制化合物可以设置在管芯和载体之上。牺牲载体可以去除，并且模制的器件管芯可以被翻转。RDL可以沉积在模制化合物和器件管芯之上以形成重构晶片。重构晶片可以被单片化为多个封装，每个封装包括连接到RDL的一个或多个管芯。
然而，在利用沉积RDL的重构晶片中，管芯相对于其预期位置可能具有较小未对准，例如旋转和/或平移未对准。当数百或数千个管芯跨重构晶片未对准时，沉积RDL的未对准可能相应地被放大相当大的量。在这种情况下，未对准可以通过在(多个)管芯上使用粗间距和/或在管芯之间使用有限数目的互连来补偿。然而，减少管芯上的接触焊盘的数目和/或管芯之间的互连的数目可能是不希望的。当一个系统中使用两个以上的管芯时，可能会加剧未对准问题。因此，仍然需要利用扇出再分布的封装中的集成器件管芯的改进的对准。
本文中公开的各种实施例可以通过将器件管芯安装(例如，直接键合)到互连结构(例如，RDL)来有利地确保多个器件管芯相对于彼此对准，该互连结构可以用作对准层以相对于彼此和/或重构晶片中的期望位置来精确地对准管芯。一个或多个元件可以安装(例如，直接键合)到互连结构的相对侧，以电连接横向地间隔的器件管芯。模制化合物可以设置在互连结构、管芯和元件的一个或两个侧之上。将器件管芯和/或连接元件直接键合到公共互连结构(例如，用作RDL的对准层)可以改善管芯之间的对准。重构晶片可以被单片化以形成多个封装，每个封装包括在互连结构的相对侧上的多个器件管芯和连接元件。
两个或更多个半导体元件(诸如集成器件管芯、晶片等)可以堆叠或彼此键合以形成键合结构。一个元件的导电接触焊盘可以电连接到另一元件的对应导电接触焊盘。任何合适数目的元件都可以堆叠在键合结构中。
参考图1A和图1B，在一些实施例中，元件(例如，多个管芯12和互连结构10)在没有粘合剂的情况下直接彼此键合。在各种实现中，第一元件(例如，具有有源电路系统的第一半导体器件管芯或第一集成器件管芯12)的非导电材料46可以在没有粘合剂的情况下直接键合到第二元件(例如，具有有源电路系统的第二半导体器件管芯或互连结构10)的对应介电场区域(例如，非导电材料30)。非导电材料46可以称为第一元件的非导电键合区域。在一些实施例中，第一元件的非导电材料可以使用介电介电键合技术直接键合到第二元件的对应介电场区域。例如，介电介电键合可以使用至少在美国专利第9,564,414号、第9,391,143号和第10,434,749号中公开的直接键合技术在没有粘合剂的情况下形成，其中的每个专利的全部内容通过引用整体并入本文并且用于所有目的。
在各种实施例中，混合直接键合可以在没有中间粘合剂的情况下形成。例如，介电键合表面可以被抛光到高度光滑。键合表面可以被清洁并且暴露于等离子体和/或蚀刻剂以激活表面。在一些实施例中，表面可以在激活之后或在激活期间(例如，在等离子体和/或蚀刻工艺期间)用物质终止。在不受理论限制的情况下，在一些实施例中，激活过程可以被执行以破坏键合表面处的化学键，并且终止过程可以在键合表面处提供附加化学物质，其提高了直接键合期间的键合能量。在一些实施例中，激活和终止在相同步骤中提供，例如，用于激活和终止表面的等离子体或湿蚀刻剂。在其他实施例中，键合表面可以在单独的处理中终止，以提供用于直接键合的附加物质。在各种实施例中，终止物质可以包括氮。此外，在一些实施例中，键合表面可以暴露于氟。例如，在层和/或键合界面附近可以存在一个或多个氟峰。因此，在直接键合结构中，两种介电材料之间的键合界面可以包括在键合界面处具有较高氮含量和/或氟峰的非常光滑的界面。激活和/或终止处理的附加示例可以在美国专利第9,564,414号、第9,391,143号和第10,434,749号中找到，其中的每个专利的全部内容通过引用整体并入本文并且用于所有目的。
在各种实施例中，第一元件的导电接触焊盘可以直接键合到第二元件的对应导电接触焊盘。例如，混合键合技术可以用于提供沿着键合界面的导体到导体直接键合，该键合界面包括如上所述制备的共价直接键合介电到介电表面。在各种实施例中，导体到导体(例如，接触焊盘到接触焊盘)直接键合和介电到介电混合键合可以使用至少在美国专利第9,716,033号和第9,852,988号中公开的直接键合技术来形成，其中的每个专利的全部内容通过引用整体并入本文并且用于所有目的。
例如，介电键合表面可以被制备并且在没有中间粘合剂的情况下直接彼此键合，如上所述。导电接触焊盘(其可以被非导电介电场区域围绕)也可以在没有中间粘合剂的情况下直接彼此键合。在一些实施例中，相应接触焊盘可以凹陷在介电场或非导电键合区域的外(例如，上)表面下方，例如，凹陷小于20nm、小于15nm或小于10nm，例如，凹陷2nm至20nm的范围内，或凹陷4nm至10nm的范围内。在一些实施例中，不导电键合区域可以在室温下、在没有粘合剂的情况下直接彼此键合，并且随后，键合结构可以被退火。在退火时，接触焊盘可以膨胀并且彼此接触以形成金属到金属直接键合。有益的是，直接键合互连或
Figure BDA0004182394240000051
技术的使用可以实现跨直接键合界面连接的高密度焊盘(例如，针对常规阵列的小间距或精细间距)。在一些实施例中，键合焊盘的间距可以小于40微米或小于10微米或甚至小于2微米。对于一些应用，键合焊盘的间距与键合焊盘的尺寸中的一个尺寸的比率小于5，或小于3，有时希望小于2。在各种实施例中，接触焊盘可以包括铜，尽管其他金属也可以是合适的。
因此，在直接键合工艺中，第一元件可以在中间粘合剂的情况下直接键合到第二元件。在一些布置中，第一元件可以包括单片化元件，诸如单片化集成器件管芯。在其他布置中，第一元件可以包括载体或衬底(例如，晶片)，该载体或衬底包括多个(例如，数十个、数百个或更多个)器件区域，这些器件区域在被单片化时形成多个集成器件管芯。类似地，第二元件可以包括单片化元件，诸如单片化集成器件管芯。在其他布置中，第二元件可以包括载体或衬底(例如，晶片)。
如本文中所述，第一元件和第二元件可以在没有粘合剂的情况下直接彼此键合，这与沉积工艺不同。第一元件和第二元件可以相应地包括非沉积元件。此外，与沉积层不同，直接键合结构可以包括沿着键合界面的缺陷区域，缺陷区域中存在纳米空隙。纳米空隙可能是由于键合表面的激活(例如，暴露于等离子体)而形成的。如上所述，键合界面可以包括来自激活和/或最后化学处理过程的材料的浓度。例如，在利用氮等离子体进行激活的实施例中，氮峰可以形成在键合界面处。在利用氧等离子体进行激活的实施例中，氧峰可以形成在键合界面处。在一些实施例中，键合界面可以包括氮氧化硅、碳氮氧化硅或碳氮化硅。如本文中解释的，直接键合可以包括共价键合，其比范德华键更强。键合层还可以包括被平坦化到高度光滑的抛光表面。
在各种实施例中，接触焊盘之间的金属到金属键合可以被结合，使得铜晶粒跨键合界面生长到彼此之中。在一些实施例中，铜可以具有沿着111晶面定向的晶粒，以改善铜跨键合界面的扩散。键合界面可以基本上完全延伸到键合接触焊盘的至少一部分，使得在键合接触焊盘处或附近的非导电键合区域之间基本上没有间隙。在一些实施例中，阻挡层可以设置在接触焊盘(例如，可以包括铜)下方。然而，在其他实施例中，例如，如US 2019/0096741中所述，在接触焊盘下方可以不存在阻挡层，该专利通过引用整体并入本文并且用于所有目的。
图1A示出了集成器件管芯12a-12c和多个元件14a-14b在安装到互连结构10之前的示意性侧视图。图1B示出了根据一个实施例的键合结构1的示意性横截面侧视图。图1B的键合结构1可以表示已经从重构晶片分离(例如，通过锯切或冲压)的单片化结构。键合结构1可以包括具有第一侧10a和第二侧10b的互连结构10、安装到互连结构10的第一侧10a的多个集成器件管芯12(例如，第一管芯12a、第二管芯12b和第三管芯12c)、以及安装到互连结构10的第二侧10b的多个连接元件14(例如，第一元件14a和第二元件14b)。键合结构还可以包括设置在互连结构的第一侧10a上的第一模制材料16、设置在互连结构的第二侧10b上的第二模制材料18、以及第二互连结构20。
互连结构10的第一侧10a可以包括多个导电接触焊盘22(例如，第一接触焊盘22a、第二接触焊盘22b和第三接触焊盘22c)，并且互连结构10的第二侧10b可以包括多个导电接触焊盘24(例如，第一接触焊盘24a、第二接触焊盘24b)。在一些实施例中，第一接触焊盘22a和第一接触焊盘24a可以电连接，并且第二接触焊盘22b和第二接触焊盘24b可以电连接。第一接触焊盘22a可以相对于第一接触焊盘24a横向地偏移。第二接触焊盘22b可以相对于第二接触焊盘24b横向地偏移。在一些实施例中，互连结构10可以包括再分布层(RDL)。互连结构10可以包括非导电材料30、形成在非导电材料30中的多个导线32、形成在非导电材料30中的多个导电过孔(未示出)。非导电材料30可以包括任何合适的材料。例如，非导电材料30可以包括介电材料(诸如氧化硅)或聚合物(诸如聚酰亚胺)。在一些实施例中，导线32可以包括用于向管芯12提供电力的电力线。在一些实施例中，导线32可以包括用于在管芯12a-12c之间传输信号的信号线。在一些实施例中，导线32可以在第一侧10a上的接触焊盘(例如，第一接触焊盘22a和第二焊盘22b)与第二侧10b上的接触焊盘(例如，第一接触焊盘24a和第二接触焊盘24b)之间横向地传输或再分布信号。
互连结构10可以通过转移工艺提供。例如，在一些实施例中，互连结构10(例如，RDL)可以形成在载体(诸如半导体或玻璃载体)上，并且直接键合到多个管芯12。载体可以从互连结构10去除以将RDL转移到多个管芯12。因此，在一些实施例中，互连结构10可以包括转移RDL。第一管芯12a、第二管芯12b和第三管芯12c可以沿着互连结构10的第一侧10a彼此间隔开。互连结构10可以有利地用于相对于公共互连结构10(例如，RDL)对准多个管芯12a、12b、12c和元件14。
在一些实施例中，多个集成器件管芯12中的一个或多个可以倒装芯片安装到互连结构10。多个集成器件管芯12可以包括任何合适类型的器件管芯。例如，多个集成器件管芯12中的一个或多个管芯可以包括电子组件，诸如处理器管芯、存储器管芯、微机电系统(MEMS)管芯、光学器件、或任何其他合适类型的器件管芯。在其他实施例中，电子组件可以包括无源器件，诸如电容器、电感器或其他表面安装器件。在各种实施例中，电路系统(诸如晶体管等有源组件)可以在多个集成器件管芯12中的一个或多个管芯的(多个)有源表面处或附近被图案化。有源表面可以在多个集成器件管芯12中的一个或多个管芯的一侧上，该侧与多个集成设备管芯12中的一个或多个的相应背面相对。背面可以包括也可以不包括任何有源电路系统或无源器件。第一集成器件管芯12和第二集成器件管芯14可以是相同类型的集成器件管芯或不同类型的器件管芯。
第一管芯12a可以包括键合表面40和与键合表面40相对的背表面42。键合表面40可以具有多个导电键合焊盘(包括导电键合焊盘44)和靠近导电键合焊盘44的非导电材料46。在一些实施例中，导电键合焊盘44可以键合到第一导电焊盘22a，并且非导电材料46可以键合到非导电材料30的一部分。在一些实施例中，导电键合焊盘44可以在没有中间粘合剂的情况下直接键合到第一导电焊盘22a，并且非导电材料46可以在没有中间粘合剂的情况下直接键合到非导电材料30的上述部分。非导电材料46、30和导电焊盘44、22a可以在没有粘合剂的情况下直接键合，如整个美国专利第7,126,212号、第8,153,505号、第7,622,324号、第7,602,070号、第8,163,373号、第8,389,378号、第7,485,968号、第8,735,219号、第9,385,024号、第9,391,143号、第9,431,368号、第9,953,941号、第9,716,033号、第9,852,988号、第10,032,068号、第10,204,893号、第10,434,749号和第10,446,532号中所述，其中的每个专利的内容通过引用整体并入本文并且用于所有目的。在一些实施例中，多个集成器件管芯12可以替代地通过导热键合(TCB)键合到互连结构10。
第二管芯12b和第三管芯12c可以以与第一管芯12a类似的方式键合到互连结构。在一些实施例中，第二管芯12b可以包括多个接触焊盘和非导电材料52，接触焊盘包括导电接触焊盘50，导电接触焊盘50可以键合到互连结构10的导电接触焊盘22b，非导电材料52可以键合到互连结构10的非导电材料30的一部分。在一些实施例中，第二管芯12b可以包括导电接触焊盘50和非导电材料52，导电接触焊盘50可以在没有中间粘合剂的情况下直接键合到互连结构10的导电接触焊盘22b，非导电材料52可以在没有中间粘合剂的情况下直接键合到互连结构10的非导电材料30的一部分。
在一些实施例中，多个元件14(例如，第一元件14a和第二元件14b)可以包括互连层60和元件本体62。在一些实施例中，互连层60可以包括具有嵌入在绝缘或非导电材料中的导体的再分布层(RDL)。在一些实施例中，元件本体62可以包括衬底，诸如硅衬底、玻璃衬底等。在一些实施例中，元件本体62可以包括集成器件管芯。在一些实施例中，多个元件14可以包括高密度互连衬底。元件14可以通过连接到互连结构10中连接到管芯12a-12c的导体来有利地提供管芯12a、12b、12c之间的电通信。在一些布置中，互连结构10可以包括横向地电连接管芯12a-12c的迹线。然而，互连结构10可以包括一个或若干层，这可能不足以在管芯12a-12c之间提供密集的信号线。有利地，元件14可以包括多个或密集的互连和信号线，这些互连和信号线可以在管芯12a-12c之间传送大量信号。例如，在一些实施例中，互连结构10可以通过互连结构10中的过孔将信号从管芯12a的焊盘垂直地传输到元件14a。第一元件14a可以通过元件内的迹线或导体66a横向地传输信号。信号可以通过互连结构10中的过孔垂直地传输到管芯12b。第二元件14b可以通过元件内的迹线或导体66b横向地传输信号。
第一元件14a可以包括第一导电接触焊盘64a和第二导电接触焊盘64b。第一导电接触焊盘64a和第二导电接触焊盘64b可以通过导线66a彼此电耦合。第一导电焊盘64a和第二导电焊盘64b可以键合到互连结构10的第二侧10b上的对应焊盘。在一些实施例中，第一导电焊盘64a和第二导电焊盘64b可以以与第一管芯12a的导电接触焊盘44键合到互连结构的导电接触焊盘22a的方式相同或大体相似的方式键合到互连结构10的第二侧10b上的对应焊盘。元件14b还可以包括键合到互连结构10的第二侧10b的非导电材料68。在一些实施例中，非导电材料68可以以与第一管芯12a的非导电材料46在互连结构10的第一侧10a处键合到非导电材料30的一部分的方式相同或大体相似的方式在互连结构10的第二侧10b处直接键合到非导电材料30的一部分。
互连结构10和第一元件14a可以限定第一管芯12a与第二管芯12b之间的导电路径的至少一部分。在一些实施例中，第一元件14a和第二元件14b可以大体相似。例如，第一元件14a和第二元件14b可以是相同结构。在其他实施例中，第一元件14a和第二元件14b可以包括不同结构。尽管在图1B中，第一元件14a限定两个相邻管芯(第一管芯12a和第二管芯12b)之间的导电路径的一部分，但在一些实施例中，元件可以限定互连结构10上的两个或更多个相邻管心或两个或更多个远程定位管芯之间的导电通路的至少一部分。仅通过互连结构10(例如，RDL，在没有元件14a、14b的情况下)将管芯12彼此电耦合可能导致某些问题和困难。例如，针对两个或更多个管芯12在RDL中形成导电路由可能需要复杂的多层结构，并且RDL可能不能提供足够的密度用于管芯12之间的适当连接。此外，在互连结构中形成用于两个或更多个管芯12的导电路由可能相对昂贵。因此，元件14可以提供与在互连结构10中具有用于管芯12的导电路由相关联的这些问题和困难的解决方案。
第一模制材料16可以包括聚合物、环氧树脂、树脂或类似材料。在一些实施例中，第一模制材料16为第一集成器件管芯12a、第二集成器件管芯12b和/或第三集成器件管心12c提供机械支撑。在一些实施例中，第一模制材料16可以至少部分设置在第一集成器件管芯12a、第二集成器件管芯12b和第三集成器件管心12c周围。
第二模制材料18可以包括与第一材料18相同或大体相似的材料。在一些实施例中，第一模制材料16和第二模制材料18可以包括功能相似的材料。第二模制材料18可以包括聚合物、环氧树脂、树脂或类似材料。在一些实施例中，第二模制材料18为第一元件14a和/或第二元件14b提供机械支撑。在一些实施例中，第二模制材料18可以至少部分设置在第一元件14a和第二元件14b周围。
键合结构1还可以包括至少形成在第二模制材料18中的导电过孔70。在一些实施例中，导电过孔70可以至少部分延伸穿过第二模制材料18的厚度。在一些实施例中，导电过孔70可以从互连结构10的第二侧10b延伸到第二互连结构20。在一些实施例中，导电过孔70可以从互连结构10的第一侧10a延伸到第二互连结构20，从而与多个管芯12中的一个管芯直接接触。
第二互连结构20可以包括与第一互连结构10相同或大体相似的结构。在一些实施例中，第一互连结构10和第二互连结构20可以包括功能相似的结构。
图2A-图2E示出了根据一个实施例的制造键合结构1的工艺流程。图2A示出了形成在载体74上的互连结构10的示意性横截面侧视图。在一些实施例中，载体74可以包括半导体或玻璃载体。在图2B中，多个管芯12可以设置在互连结构10的第一侧10a上。管芯12可以在没有粘合剂的情况下直接键合到互连结构10(例如，管芯12和互连结构10的导电触点和非导电场区域可以分别彼此直接键合)。在图2B中，第一模制材料16还可以设置在互连结构10的第一侧10a之上，包括在互连结构10的第一侧10a、管芯12的侧表面和管芯12的上表面之上。载体74可以从互连层10去除。在图2C中，一个或多个元件14可以设置在互连结构10的与第一侧10a相对的第二侧10b上。在一些实施例中，元件14可以在没有粘合剂的情况下直接键合到互连结构10的第二侧10b(例如，元件14和互连结构10的导电触点和非导电场区域可以分别彼此直接键合)。一个或多个元件14可以通过互连结构10(例如，RDL)电耦合多个集成器件管芯12中的两个或更多个集成器件管芯。在一些实施例中，图2C所示的结构可以是可以安装到另一器件(诸如系统板)的最终结构。
在图2D中，第二模制材料18可以至少部分设置在元件14周围，例如，在互连结构10的第二侧10b之上。在所示实施例中，元件14可以完全嵌入第二模制材料18中，使得第二模制材料18覆盖元件14的侧表面和上表面。在一些实施例中，第二模制材料18可以包括至少部分延伸穿过第二模制材料18的厚度的导电过孔70。在一些实施例中，图2D所示的结构可以是可以安装到另一器件(诸如系统板或其他器件)的最终结构。
在图2E中，可以提供第二互连结构20。在一些实施例中，图2E所示的结构可以是可以安装到另一器件(诸如系统板或其他器件)的最终结构。在一些实施例中，图2E所示的结构可以安装到系统板或PCB。在其他实施例中，诸如图2E所示的多个结构可以彼此堆叠，或者可以堆叠在不同类型的结构上，诸如重构的晶片或元件、管芯、中介层等。
图3A-图3E示出了根据另一实施例的制造键合结构的工艺流程。图3A示出了形成在载体74上或载体74中的互连结构10的示意性横截面侧视图。在一些实施例中，载体74可以包括半导体或玻璃载体。在图3B中，一个或多个元件14可以设置在互连结构10的第二侧10b上。如上所述，在一些实施例中，元件14可以在没有粘合剂的情况下直接键合到互连结构10。第二模制材料18可以至少部分设置在元件14周围。在一些实施例中，第二模制材料18可以包括至少部分延伸穿过(例如，完全穿过)第二模制材料18的厚度的导电过孔70。
在图3C中，可以提供第二载体76。在一些实施例中，第二载体76可以包括半导体或玻璃载体。载体74可以从互连层10去除。在图3D中，多个管芯12可以设置在互连结构10的第一侧10a上。如上所述，在一些实施例中，管芯12可以在没有粘合剂的情况下直接键合到互连结构10。第一模制材料16也可以设置在互连结构10的第一侧10a之上。在图3E中，第二载体76可以去除。图3E所示的结构可以与图2D所示的结构相同或大体相似。
图4示出了根据一个实施例的键合结构2的示意性横截面侧视图。除非另有说明，否则图4中的组件可以与图1A-图3E中编号相同的组件相同或大体相似。图4的键合结构2可以表示已经从重构晶片分离(例如，通过锯切或冲孔)的单片化结构。键合结构2可以包括具有第一侧l0'a和第二侧l0'b的互连结构10'、安装到互连结构10'的第一侧l0'a的多个集成器件管芯12(例如，第一管芯12a、第二管芯12b和第三管芯12c)、以及安装到互连结构10'的第二侧l0'b的多个连接元件14(例如，第一元件14a和第二元件14b)。键合结构还可以包括设置在互连结构的第一侧l0'a上的第一模制材料16、设置在互连结构的第二侧l0'b上的第二模制材料18、以及第二互连结构20。
图4中的互连结构10'通常类似于图1A-图3E所示的互连结构10。在互连结构10'中，导电接触焊盘22不是内部电连接的。例如，第一导电接触焊盘22a和第二导电接触焊盘22b在互连结构10'内没有内部电连接在一起。相反，第一导电接触焊盘22a和第二导电接触焊盘22b通过分别连接到第一接触焊盘24a和第二接触焊盘24b的第一元件14a的第一导电接触焊盘64a和第二导电接触焊盘64b电耦合。
图5是根据各种实现的合并一个或多个键合结构5的系统80的示意图。系统80可以包括任何合适类型的电子设备，诸如移动电子设备(例如，智能手机、平板计算设备、膝上型计算机等)、台式计算机、汽车或其组件、立体声系统、医疗设备、相机或任何其他合适类型的系统。在一些实施例中，电子设备可以包括微处理器、图形处理器、电子记录设备或数字存储器。系统80可以包括一个或多个器件封装82，器件封装82例如通过一个或多个主板机械连接和电连接到系统80。每个封装82可以包括一个或多个键合结构5。图5所示的键合结构5可以包括本文中公开的任何键合结构。键合结构5可以包括执行系统80的各种功能的一个或多个集成器件管芯。
在一个方面，公开了一种键合结构。键合结构可以包括互连结构，该互连结构具有第一侧和与第一侧相对的第二侧。第一侧包括第一导电焊盘、第二导电焊盘和非导电区域。键合结构还可以包括安装并且直接键合到互连结构的第一侧的第一管芯。第一管芯电连接到互连结构的第一导电焊盘。键合结构还可以包括安装到互连结构的第一侧的第二管芯。第二管芯电连接到互连结构的第二导电焊盘。第二管芯沿着互连结构的第一侧与第一管芯横向地间隔开。键合结构还可以包括安装到互连结构的第二侧的元件。第一管芯和第二管芯通过至少互连结构和该元件电连接。
在一个实施例中，第一管芯包括键合表面。键合表面可以包括第一导电键合焊盘和第一非导电材料。第一导电键合焊盘可以在没有中间粘合剂的情况下直接键合到第一导电焊盘。第一非导电材料可以在没有中间粘合剂的情况下直接键合到非导电区域的第一部分。第二管芯包括键合表面。键合表面可以包括第二导电键合焊盘和第二非导电材料。第二导电键合焊盘可以在没有中间粘合剂的情况下直接键合到第二导电焊盘。第二非导电材料可以在没有中间粘合剂的情况下直接键合到非导电区域的第二部分。
在一个实施例中，元件在没有中间粘合剂的情况下直接键合到互连结构的第二侧。
在一个实施例中，第一管芯通过导热键合(TCB)安装到互连结构的第一侧。
在一个实施例中，互连结构包括再分布层(RDL)。RDL层包括单层RDL。
在一个实施例中，该元件通过导热键合(TCB)安装到互连结构的第二侧。
在一个实施例中，该元件包括第三管芯。
在一个实施例中，该元件包括形成在衬底上的再分布层(RDL)。
在一个实施例中，该元件包括高密度互连衬底。
在一个实施例中，键合结构还包括第一模制材料，该第一模制材料设置在互连结构之上并且至少部分在第一管芯与第二管芯之间。
在一个实施例中，键合结构还包括设置在该元件周围的第二模制材料。键合结构还可以包括至少延伸穿过第二模制材料的厚度的导电过孔。键合结构还可以包括通过过孔被电耦合到互连结构的第二互连结构。该元件可以定位在互连结构与第二互连结构之间。
在一个方面，公开了一种键合结构。键合结构可以包括互连结构，该互连结构具有第一侧和与第一侧相对的第二侧。第一侧包括第一导电焊盘、第二导电焊盘和非导电区域。第二侧包括第三导电焊盘和第四导电焊盘。键合结构还可以包括安装到互连结构的第一侧的第一管芯。第一管芯电连接到互连结构的第一导电焊盘。键合结构还可以包括安装到互连结构的第一侧的第二管芯。第二管芯电连接到互连结构的第二导电焊盘。第二管芯沿着互连结构的第一侧与第一管芯横向地间隔开。键合结构还包括安装并且直接键合到互连结构的第二侧并且电连接到第三导电焊盘和第四导电焊盘的元件。该元件被配置为提供第一管芯与第二管芯之间的导电路径的至少一部分。
在一个实施例中，第三导电焊盘相对于第一导电焊盘横向地偏移。
在一个实施例中，第一管芯包括键合表面。键合表面可以包括第一导电键合焊盘和第一非导电材料。第一导电键合焊盘可以在没有中间粘合剂的情况下直接键合到第一导电焊盘。第一非导电材料可以直接键合到非导电区域的第一部分。第二管芯可以包括键合表面。键合表面可以包括第二导电键合焊盘和第二非导电材料。第二导电键合焊盘可以在没有中间粘合剂的情况下直接键合到第二导电焊盘。第二非导电材料可以在没有中间粘合剂的情况下直接键合到非导电区域的第二部分。
在一个实施例中，该元件在没有中间粘合剂的情况下直接键合到互连结构的第二侧。
在一个实施例中，第一管芯通过导热键合(TCB)安装到互连结构的第一侧。
在一个实施例中，互连结构包括再分布层(RDL)。RDL层包括单层RDL。
在一个实施例中，该元件通过导热键合(TCB)安装到互连结构的第二侧。
在一个实施例中，该元件包括第三管芯。
在一个实施例中，该元件包括形成在衬底上的再分布层(RDL)。
在一个实施例中，该元件包括高密度互连衬底。
在一个实施例中，键合结构还包括第一模制材料，该第一模制材料至少部分设置在第一管芯与第二管芯之间的互连结构之上。
在一个实施例中，键合结构还包括设置在该元件周围的第二模制材料。键合结构还可以包括至少延伸穿过第二模制材料的厚度的导电过孔。键合结构还可以包括通过过孔被电耦合到互连结构的第二互连结构。该元件可以定位在互连结构与第二互连结构之间。
在一个方面，公开了一种键合结构。键合结构可以包括互连结构，该互连结构具有第一侧和与第一侧相对的第二侧。第一侧被配置为支撑多个管芯。第二侧包括第一导电焊盘、第二导电焊盘和在第一导电焊盘与第二导电焊盘之间的非导电区域。键合结构还可以包括具有键合表面的元件。键合表面包括第一导电键合焊盘、第二导电键合焊盘和在第一导电键合焊盘与第二导电键合焊盘之间的非导电材料。第一导电键合焊盘和第二导电键合焊盘分别在没有中间粘合剂的情况下直接键合到第一导电焊盘和第二导电焊盘。非导电材料直接键合到非导电区域的一部分。该元件被配置为限定多个管芯中的两个或更多个管芯之间的导电路径的至少一部分。
在一个实施例中，键合结构还包括安装到互连结构的第一侧的第一管芯和安装到互连结构的第一侧的第二管芯。第二管芯可以与第一管芯沿着互连结构的第一侧横向地间隔开。第一管芯通过至少互连层和该元件与第二管芯电耦合。键合结构还可以包括第一模制材料，第一模制材料至少部分第一管芯与第二管芯之间设置在互连结构之上。第一管芯可以在没有中间粘合剂的情况下直接安装到互连结构的第一侧。
在一个实施例中，互连结构包括再分布层(RDL)。RDL层可以包括单层RDL。
在一个实施例中，该元件包括集成器件管芯。
在一个实施例中，该元件包括形成在衬底上的再分布层(RDL)。
在一个实施例中，该元件包括高密度互连衬底。
在一个实施例中，键合结构还包括设置在该元件周围的第二模制材料。键合结构还可以包括至少延伸穿过模制材料的厚度的导电过孔。键合结构还可以包括通过过孔被电耦合到互连结构的第二互连结构。该元件定位在互连结构与第二互连结构之间。
除非上下文另有明确要求，否则在整个说明书和权利要求书中，词语“包括(comprise)”、“包括(comprising)”、“包括(include)”、“包括(including)”等应当在包括性的意义上解释，而不是在排他性或详尽的意义上解释；也就是说，在“包括但不限于”的意义上解释。本文中通常使用的词语“耦合”是指两个或更多个元件，它们可以直接连接，也可以通过一个或多个中间元件连接。同样，本文中通常使用的词语“连接”是指两个或更多个元件，它们可以直接连接，也可以通过一个或多个中间元件连接。此外，在本申请中使用的词语“本文中”、“上面”、“下面”和具有类似含义的词语应当是指本申请的整体，而不是本申请的任何特定部分。在上下文允许的情况下，上述“具体实施方式”中使用单数或复数的词语也可以分别包括复数或单数。词语“或”是指两个或更多个项目的列表，该词语涵盖了对该词语的所有以下解释：列表中的任何项目、列表中的所有项目、以及列表中的项目的任何组合。
此外，本文中使用的条件语言，诸如“可能(can)”、“可以(could)”、“可以(might)”、“可以(may)”、“例如(e.g.)”、“例如(for example)”、“诸如(such as)”等，除非另有特别说明，或在所使用的上下文中以其他方式理解，否则通常旨在传达某些实施例包括、而其他实施例不包括某些特征、元素和/或状态。因此，这种条件语言通常并不表示特征、元素和/或状态以任何方式是一个或多个实施例所需要的。
虽然已经描述了某些实施例，但这些实施例仅以示例的方式呈现，并不旨在限制本公开的范围。事实上，本文中描述的新颖装置、方法和系统可以以各种其他形式来体现；此外，在不脱离本公开的精神的情况下，可以对本文中描述的方法和系统的形式进行各种省略、替换和改变。例如，虽然块以给定布置呈现，但是替代实施例可以利用不同的组件和/或电路拓扑来执行类似的功能，并且一些块可以删除、移动、添加、细分、组合和/或修改。这些块中的每个可以以各种不同方式来实现。上述各种实施例的元件和动作的任何适当组合都可以被组合以提供另外的实施例。所附权利要求及其等同物旨在涵盖落入本公开的范围和精神内的这样的形式或修改。

Claims (43)

1.一种键合结构，包括：
互连结构，具有第一侧和与所述第一侧相对的第二侧，所述第一侧包括第一导电焊盘、第二导电焊盘和非导电区域；
第一管芯，安装并且直接键合到所述互连结构的所述第一侧，所述第一管芯电连接到所述互连结构的所述第一导电焊盘；
第二管芯，安装到所述互连结构的所述第一侧，所述第二管芯电连接到所述互连结构的所述第二导电焊盘，所述第二管芯沿着所述互连结构的所述第一侧与所述第一管芯横向地间隔开；以及
元件，安装到所述互连结构的所述第二侧，
其中所述第一管芯和所述第二管芯通过至少所述互连结构和所述元件电连接。
2.根据权利要求1所述的键合结构，其中所述第一管芯包括键合表面，所述键合表面包括第一导电键合焊盘和第一非导电材料，所述第一导电键合焊盘在没有中间粘合剂的情况下直接键合到所述第一导电焊盘，并且所述第一非导电材料在没有中间粘合剂的情况下直接键合到所述非导电区域的第一部分。
3.根据权利要求2所述的键合结构，其中所述第二管芯包括键合表面，所述键合表面包括第二导电键合焊盘和第二非导电材料，所述第二导电键合焊盘在没有中间粘合剂的情况下直接键合到所述第二导电焊盘，并且所述第二非导电材料在没有中间粘合剂的情况下直接键合到所述非导电区域的第二部分。
4.根据权利要求1所述的键合结构，其中所述元件在没有中间粘合剂的情况下直接键合到所述互连结构的所述第二侧。
5.根据权利要求1所述的键合结构，其中所述第一管芯通过导热键合(TCB)安装到所述互连结构的所述第一侧。
6.根据权利要求1所述的键合结构，其中所述互连结构包括再分布层(RDL)。
7.根据权利要求6所述的键合结构，其中所述RDL层包括单层RDL。
8.根据权利要求1所述的键合结构，其中所述元件通过导热键合(TCB)安装到所述互连结构的所述第二侧。
9.根据权利要求1所述的键合结构，其中所述元件包括第三管芯。
10.根据权利要求1所述的键合结构，其中所述元件包括再分布层(RDL)，所述RDL形成在衬底上。
11.根据权利要求1所述的键合结构，其中所述元件包括高密度互连衬底。
12.根据权利要求1所述的键合结构，还包括第一模制材料，所述第一模制材料至少部分在所述第一管芯与所述第二管芯之间设置在所述互连结构之上。
13.根据权利要求1所述的键合结构，还包括第二模制材料，所述第二模制材料设置在所述元件周围。
14.根据权利要求13所述的键合结构，还包括导电过孔，所述导电过孔至少延伸穿过所述第二模制材料的厚度。
15.根据权利要求14所述的键合结构，还包括第二互连结构，所述第二互连结构通过所述过孔被电耦合到所述互连结构，所述元件定位在所述互连结构与所述第二互连结构之间。
16.一种键合结构，包括：
互连结构，具有第一侧和与所述第一侧相对的第二侧，所述第一侧包括第一导电焊盘、第二导电焊盘和非导电区域，并且所述第二侧包括第三导电焊盘和第四导电焊盘；
第一管芯，安装到所述互连结构的所述第一侧，所述第一管芯电连接到所述互连结构的所述第一导电焊盘；
第二管芯，安装到所述互连结构的所述第一侧，所述第二管芯电连接到所述互连结构的所述第二导电焊盘，所述第二管芯沿着所述互连结构的所述第一侧与所述第一管芯横向地间隔开；以及
元件，安装并且直接键合到所述互连结构的所述第二侧，并且电连接到所述第三导电焊盘和所述第四导电焊盘，所述元件被配置为提供所述第一管芯与所述第二管芯之间的导电路径的至少一部分。
17.根据权利要求16所述的键合结构，其中所述第三导电焊盘相对于所述第一导电焊盘横向地偏移。
18.根据权利要求16所述的键合结构，其中所述第一管芯包括键合表面，所述键合表面包括第一导电键合焊盘和第一非导电材料，所述第一导电键合焊盘在没有中间粘合剂的情况下直接键合到所述第一导电焊盘，并且所述第一非导电材料直接键合到所述非导电区域的第一部分。
19.根据权利要求18所述的键合结构，其中所述第二管芯包括键合表面，所述键合表面包括第二导电键合焊盘和第二非导电材料，所述第二导电键合焊盘在没有中间粘合剂的情况下直接键合到所述第二导电焊盘，并且所述第二非导电材料在没有中间粘合剂的情况下直接键合到所述非导电区域的第二部分。
20.根据权利要求16所述的键合结构，其中所述元件在没有中间粘合剂的情况下直接键合到所述互连结构的所述第二侧。
21.根据权利要求16所述的键合结构，其中所述第一管芯通过导热键合(TCB)安装到所述互连结构的所述第一侧。
22.根据权利要求16所述的键合结构，其中所述互连结构包括再分布层(RDL)。
23.根据权利要求22所述的键合结构，其中所述RDL层包括单层RDL。
24.根据权利要求16所述的键合结构，其中所述元件通过导热键合(TCB)安装到所述互连结构的所述第二侧。
25.根据权利要求16所述的键合结构，其中所述元件包括第三管芯。
26.根据权利要求16所述的键合结构，其中所述元件再分布层(RDL)，所述RDL包括形成在衬底上。
27.根据权利要求16所述的键合结构，其中所述元件包括高密度互连衬底。
28.根据权利要求16所述的键合结构，还包括第一模制材料，所述第一模制材料至少部分在所述第一管芯与所述第二管芯之间设置在所述互连结构之上。
29.根据权利要求16所述的键合结构，还包括第二模制材料，所述第二模制材料设置在所述元件周围。
30.根据权利要求29所述的键合结构，还包括导电过孔，所述导电过孔至少延伸穿过所述第二模制材料的厚度。
31.根据权利要求30所述的键合结构，还包括第二互连结构，所述第二互连结构通过所述过孔被电耦合到所述互连结构，所述元件定位在所述互连结构与所述第二互连结构之间。
32.一种键合结构，包括：
互连结构，具有第一侧和与所述第一侧相对的第二侧，所述第一侧被配置为支撑多个管芯，所述第二侧包括第一导电焊盘、第二导电焊盘和非导电区域，所述非导电区域位于所述第一导电焊盘与所述第二导电焊盘之间；以及
元件，具有键合表面，所述键合表面包括第一导电键合焊盘、第二导电键合焊盘和非导电材料，所述非导电材料位于所述第一导电键合焊盘与所述第二导电键合焊盘之间，所述第一导电键合焊盘和所述第二导电键合焊盘分别在没有中间粘合剂的情况下直接键合到所述第一导电焊盘和所述第二导电焊盘，并且所述非导电材料直接键合到所述非导电区域的一部分，
其中所述元件被配置为限定所述多个管芯中的两个或更多个管芯之间的导电路径的至少一部分。
33.根据权利要求32所述的键合结构，还包括：
第一管芯，安装到所述互连结构的所述第一侧；以及
第二管芯，安装到所述互连结构的所述第一侧，所述第二管芯沿着所述互连结构的所述第一侧与所述第一管芯横向地间隔开，
其中所述第一管芯通过至少所述互连层和所述元件与所述第二管芯电耦合。
34.根据权利要求33所述的键合结构，还包括第一模制材料，所述第一模制材料至少部分在所述第一管芯与所述第二管芯之间设置在所述互连结构之上。
35.根据权利要求33所述的键合结构，其中所述第一管芯在没有中间粘合剂的情况下直接安装到所述互连结构的所述第一侧。
36.根据权利要求32所述的键合结构，其中所述互连结构包括再分布层(RDL)。
37.根据权利要求36所述的键合结构，其中所述RDL层包括单层RDL。
38.根据权利要求32所述的键合结构，其中所述元件包括集成器件管芯。
39.根据权利要求32所述的键合结构，其中所述元件包括再分布层(RDL)，所述RDL形成在衬底上。
40.根据权利要求32所述的键合结构，其中所述元件包括高密度互连衬底。
41.根据权利要求32所述的键合结构，还包括第二模制材料，所述第二模制材料设置在所述元件周围。
42.根据权利要求41所述的键合结构，还包括导电过孔，所述导电过孔至少延伸穿过所述模制材料的厚度。
43.根据权利要求42所述的键合结构，还包括第二互连结构，所述第二互连结构通过所述过孔被电耦合到所述互连结构，所述元件定位在所述互连结构与所述第二互连结构之间。
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