CN112840461A - 显示面板及其制造方法、显示装置 - Google Patents

显示面板及其制造方法、显示装置 Download PDF

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CN112840461A
CN112840461A CN201980001453.7A CN201980001453A CN112840461A CN 112840461 A CN112840461 A CN 112840461A CN 201980001453 A CN201980001453 A CN 201980001453A CN 112840461 A CN112840461 A CN 112840461A
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electrode
layer
display panel
silicon nitride
metal reflective
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童慧
董永发
王青
黄冠达
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BOE Technology Group Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/828Transparent cathodes, e.g. comprising thin metal layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/878Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/361Temperature
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/126Shielding, e.g. light-blocking means over the TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板及制造方法、显示装置。显示面板包括:衬底基板(200)和位于衬底基板(200)一侧的多个子像素。多个子像素中的至少一个包括:发光元件(220),包括依次层叠的第一电极(226)、发光功能层(227)和第二电极(228),第一电极(226)比第二电极(228)更靠近衬底基板(200);金属反射层(222),位于衬底基板(200)和第一电极(226)之间;氮化硅层(224),位于第一电极(226)和金属反射层(222)之间,氮化硅层(224)与金属反射层(222)直接接触,氮化硅层(224)包括第一过孔(224a),第一电极(226)和金属反射层(222)通过第一过孔(224a)电连接;驱动电路,位于衬底基板(200)和金属反射层(222)之间,驱动电路包括驱动晶体管(T)和存储电容,驱动晶体管包括源极(S)、漏极(D)和栅极(G),源极(S)和漏极(D)之一与金属反射层(222)电连接,栅极(G)与存储电容电连接,存储电容被配置为存储数据信号。

Description

PCT国内申请,说明书已公开。

Claims (22)

  1. PCT国内申请,权利要求书已公开。
CN201980001453.7A 2019-08-23 2019-08-23 显示面板及其制造方法、显示装置 Pending CN112840461A (zh)

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PCT/CN2019/102314 WO2021035420A1 (zh) 2019-08-23 2019-08-23 显示面板及其制造方法、显示装置

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Family Cites Families (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2061879A1 (de) 1970-12-16 1972-06-29 Steinzeug U Kunststoffwarenfab Verfahren zur Herstellung von Keramik-Met all-Verbundkonstruktionen
JP3120200B2 (ja) 1992-10-12 2000-12-25 セイコーインスツルメンツ株式会社 光弁装置、立体画像表示装置および画像プロジェクタ
JP2860226B2 (ja) 1993-06-07 1999-02-24 シャープ株式会社 液晶表示装置およびその製造方法
JP3223997B2 (ja) 1994-09-13 2001-10-29 シャープ株式会社 論理回路及び液晶表示装置
US5986311A (en) 1997-05-19 1999-11-16 Citizen Watch Company, Ltd. Semiconductor device having recrystallized source/drain regions
US6040208A (en) 1997-08-29 2000-03-21 Micron Technology, Inc. Angled ion implantation for selective doping
US6274421B1 (en) 1998-01-09 2001-08-14 Sharp Laboratories Of America, Inc. Method of making metal gate sub-micron MOS transistor
US6677613B1 (en) 1999-03-03 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4860026B2 (ja) 1999-03-03 2012-01-25 株式会社半導体エネルギー研究所 表示装置
US6876145B1 (en) 1999-09-30 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent display device
JP2001195016A (ja) 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
US6580094B1 (en) 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
JP4360015B2 (ja) 2000-03-17 2009-11-11 セイコーエプソン株式会社 有機el表示体の製造方法、半導体素子の配置方法、半導体装置の製造方法
US6580657B2 (en) 2001-01-04 2003-06-17 International Business Machines Corporation Low-power organic light emitting diode pixel circuit
JP3904936B2 (ja) 2001-03-02 2007-04-11 富士通株式会社 半導体装置の製造方法
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
US6716687B2 (en) 2002-02-11 2004-04-06 Micron Technology, Inc. FET having epitaxial silicon growth
TWI227340B (en) 2002-02-25 2005-02-01 Himax Tech Inc Color filter and liquid crystal display
JP3794411B2 (ja) 2003-03-14 2006-07-05 セイコーエプソン株式会社 表示装置および電子機器
JP4540359B2 (ja) 2004-02-10 2010-09-08 シャープ株式会社 半導体装置およびその製造方法
JP4319078B2 (ja) 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
US7733359B1 (en) 2004-09-15 2010-06-08 Rockwell Collins, Inc. Pixel structure for electrical flat panel displays
KR101219749B1 (ko) 2004-10-22 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR100700648B1 (ko) 2005-01-31 2007-03-27 삼성에스디아이 주식회사 전면발광 유기전계발광표시장치
JP4965080B2 (ja) 2005-03-10 2012-07-04 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
US7361534B2 (en) 2005-05-11 2008-04-22 Advanced Micro Devices, Inc. Method for fabricating SOI device
JP5017851B2 (ja) 2005-12-05 2012-09-05 セイコーエプソン株式会社 発光装置および電子機器
KR100879294B1 (ko) 2006-06-12 2009-01-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치
US7781768B2 (en) 2006-06-29 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and electronic device having the same
KR100807557B1 (ko) * 2006-11-10 2008-03-03 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
CN101192382B (zh) 2006-11-29 2010-11-10 群康科技(深圳)有限公司 液晶显示器
KR100846592B1 (ko) 2006-12-13 2008-07-16 삼성에스디아이 주식회사 유기 발광 디스플레이 장치
TWI330998B (en) 2007-01-16 2010-09-21 Chimei Innolux Corp Top emitter organic electroluminescent display
US7679284B2 (en) 2007-02-08 2010-03-16 Seiko Epson Corporation Light emitting device and electronic apparatus
US8513678B2 (en) 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2009016410A (ja) 2007-07-02 2009-01-22 Toshiya Doi 薄膜トランジスタ及びその製造方法
JP2009036948A (ja) 2007-08-01 2009-02-19 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法、および有機エレクトロルミネッセンス装置
KR101235559B1 (ko) 2007-12-14 2013-02-21 삼성전자주식회사 리세스 채널 트랜지스터 및 그 제조 방법
CN101939697B (zh) 2008-03-31 2013-05-22 夏普株式会社 液晶显示装置
KR101534006B1 (ko) 2008-07-29 2015-07-06 삼성디스플레이 주식회사 유기 발광 표시 장치
CN101833186B (zh) 2009-03-10 2011-12-28 立景光电股份有限公司 显示装置的像素电路
US8754913B2 (en) 2010-04-21 2014-06-17 Lg Display Co., Ltd. Subpixel arrangement structure of display device
KR20110129531A (ko) 2010-05-26 2011-12-02 삼성모바일디스플레이주식회사 유기전계발광 표시장치의 화소배열구조
KR101645404B1 (ko) 2010-07-06 2016-08-04 삼성디스플레이 주식회사 유기 전계발광 표시장치
WO2012021767A2 (en) 2010-08-13 2012-02-16 Pixel Qi Corporation Transflective lcd with arcuate pixel portions
TWI424412B (zh) 2010-10-28 2014-01-21 Au Optronics Corp 有機發光二極體之像素驅動電路
CN101980330B (zh) 2010-11-04 2012-12-05 友达光电股份有限公司 有机发光二极管的像素驱动电路
KR101860860B1 (ko) 2011-03-16 2018-07-02 삼성디스플레이 주식회사 유기 전계발광 표시장치 및 그의 구동방법
KR101893376B1 (ko) 2011-06-28 2018-08-31 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN103403787B (zh) 2011-08-09 2016-06-29 株式会社日本有机雷特显示器 图像显示装置
KR101920766B1 (ko) 2011-08-09 2018-11-22 엘지디스플레이 주식회사 유기 발광 표시 장치의 제조 방법
US9245939B2 (en) 2011-11-07 2016-01-26 Joled Inc. Organic electroluminescence display panel and organic electroluminescence display apparatus
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
DE102013105972B4 (de) 2012-06-20 2016-11-03 Lg Display Co., Ltd. Verfahren zum Herstellen einer organischen lichtemittierenden Dioden-Anzeigevorrichtung
KR101943995B1 (ko) 2012-06-27 2019-01-31 삼성디스플레이 주식회사 유기전계발광 표시장치
CN102760841B (zh) 2012-07-11 2014-11-26 深圳市华星光电技术有限公司 有机发光二极管器件及相应的显示装置
CN104380368B (zh) 2012-07-31 2016-08-24 夏普株式会社 显示装置及其驱动方法
CN102981335A (zh) 2012-11-15 2013-03-20 京东方科技集团股份有限公司 像素单元结构、阵列基板和显示装置
CN102983155B (zh) 2012-11-29 2015-10-21 京东方科技集团股份有限公司 柔性显示装置及其制作方法
CN203026507U (zh) 2012-11-29 2013-06-26 京东方科技集团股份有限公司 柔性显示装置
CN103022079B (zh) 2012-12-12 2015-05-20 京东方科技集团股份有限公司 阵列基板及其制备方法、有机发光二极管显示装置
KR102030799B1 (ko) 2013-03-11 2019-10-11 삼성디스플레이 주식회사 유기발광표시장치
JP6207239B2 (ja) * 2013-05-31 2017-10-04 株式会社ジャパンディスプレイ 有機el表示装置
CN104240633B (zh) 2013-06-07 2018-01-09 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及其制造方法
KR102084715B1 (ko) 2013-06-18 2020-03-05 삼성디스플레이 주식회사 유기 발광 표시 장치
CN103440840B (zh) 2013-07-15 2015-09-16 北京大学深圳研究生院 一种显示装置及其像素电路
US9059123B2 (en) 2013-07-24 2015-06-16 International Business Machines Corporation Active matrix using hybrid integrated circuit and bipolar transistor
US9859439B2 (en) 2013-09-18 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105659369B (zh) 2013-10-22 2019-10-22 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
TWI511283B (zh) 2013-11-07 2015-12-01 Chunghwa Picture Tubes Ltd 畫素陣列基板及有機發光二極體顯示器
TWI660490B (zh) 2014-03-13 2019-05-21 日商半導體能源研究所股份有限公司 攝像裝置
WO2015181997A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102298336B1 (ko) 2014-06-20 2021-09-08 엘지디스플레이 주식회사 유기발광다이오드 표시장치
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
CN104201190A (zh) * 2014-08-26 2014-12-10 上海和辉光电有限公司 有机发光装置及其制备方法
CN104332486A (zh) 2014-10-29 2015-02-04 上海和辉光电有限公司 Oled像素排列结构
CN104299572B (zh) 2014-11-06 2016-10-12 京东方科技集团股份有限公司 像素电路、显示基板和显示面板
CN104332561A (zh) 2014-11-26 2015-02-04 京东方科技集团股份有限公司 有机电致发光器件、其制备方法以及显示装置
KR102338906B1 (ko) 2014-12-18 2021-12-14 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN104681624A (zh) 2014-12-24 2015-06-03 上海交通大学 单晶硅基底tft器件
CN104483796A (zh) 2015-01-04 2015-04-01 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板及显示装置
CN104597655B (zh) 2015-02-13 2017-06-27 京东方科技集团股份有限公司 一种像素排列结构、显示面板及显示装置
JP6518471B2 (ja) 2015-03-19 2019-05-22 株式会社ジャパンディスプレイ 発光素子表示装置
CN106159100A (zh) 2015-04-24 2016-11-23 上海和辉光电有限公司 有机发光二极管结构及其制作方法
KR102017764B1 (ko) 2015-04-29 2019-09-04 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20170005252A (ko) * 2015-07-01 2017-01-12 엘지디스플레이 주식회사 전극에 산란층을 포함하는 유기발광표시장치 및 이를 제조하는 방법
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KR102470504B1 (ko) 2015-08-12 2022-11-28 삼성디스플레이 주식회사 화소 및 이를 이용한 유기전계발광 표시장치
CN105304679B (zh) 2015-09-29 2018-03-16 京东方科技集团股份有限公司 一种底发光型oled显示面板
CN105185816A (zh) 2015-10-15 2015-12-23 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN204966501U (zh) 2015-10-15 2016-01-13 京东方科技集团股份有限公司 阵列基板及显示装置
CN105280139B (zh) 2015-11-11 2018-05-01 深圳市华星光电技术有限公司 Amoled亮度补偿方法及amoled驱动系统
CN105427792A (zh) 2016-01-05 2016-03-23 京东方科技集团股份有限公司 像素补偿电路及驱动方法、显示面板和显示装置
JP6746937B2 (ja) 2016-02-15 2020-08-26 セイコーエプソン株式会社 電気光学装置、および電子機器
CN205355055U (zh) 2016-02-18 2016-06-29 京东方科技集团股份有限公司 一种像素排列结构、显示面板及显示装置
CN107275359B (zh) 2016-04-08 2021-08-13 乐金显示有限公司 有机发光显示装置
CN205789046U (zh) 2016-06-28 2016-12-07 中华映管股份有限公司 像素电路
JP6722086B2 (ja) 2016-10-07 2020-07-15 株式会社ジャパンディスプレイ 表示装置
KR102578996B1 (ko) 2016-11-30 2023-09-14 엘지디스플레이 주식회사 유기발광표시패널 및 이를 이용한 유기발광표시장치
CN106601167B (zh) 2016-12-20 2019-10-01 上海天马有机发光显示技术有限公司 一种显示面板的灰阶补偿方法、装置和系统
CN106558287B (zh) 2017-01-25 2019-05-07 上海天马有机发光显示技术有限公司 有机发光像素驱动电路、驱动方法及有机发光显示面板
CN106782307B (zh) 2017-01-25 2019-07-05 上海天马有机发光显示技术有限公司 一种oled显示面板的灰阶补偿方法以及灰阶补偿系统
CN107103878B (zh) 2017-05-26 2020-07-03 上海天马有机发光显示技术有限公司 阵列基板、其驱动方法、有机发光显示面板及显示装置
CN109215549B (zh) 2017-06-30 2021-01-22 昆山国显光电有限公司 显示屏调光方法、装置、存储介质及电子设备
CN107424570B (zh) 2017-08-11 2022-07-01 京东方科技集团股份有限公司 像素单元电路、像素电路、驱动方法和显示装置
CN107393468B (zh) 2017-08-24 2019-10-22 京东方科技集团股份有限公司 一种显示面板的色偏校正方法及色偏校正装置
CN109509430B (zh) 2017-09-15 2020-07-28 京东方科技集团股份有限公司 像素驱动电路及方法、显示装置
CN107768385B (zh) 2017-10-20 2020-10-16 上海天马微电子有限公司 一种显示面板和显示装置
CN107591125A (zh) 2017-10-26 2018-01-16 京东方科技集团股份有限公司 一种电致发光元件的驱动电路和驱动方法、显示装置
CN107799577B (zh) 2017-11-06 2019-11-05 武汉华星光电半导体显示技术有限公司 Amoled显示面板及amoled显示器
CN109119027B (zh) 2018-09-10 2020-06-16 京东方科技集团股份有限公司 像素电路及其驱动方法以及显示面板
CN109036279B (zh) 2018-10-18 2020-04-17 京东方科技集团股份有限公司 阵列基板、驱动方法、有机发光显示面板及显示装置
CN109904347B (zh) 2019-03-15 2020-07-31 京东方科技集团股份有限公司 发光器件及其制造方法、显示装置
CN110071229B (zh) * 2019-05-07 2020-09-08 武汉华星光电半导体显示技术有限公司 阵列基板及其制作方法

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