CN1118874C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1118874C
CN1118874C CN97116176A CN97116176A CN1118874C CN 1118874 C CN1118874 C CN 1118874C CN 97116176 A CN97116176 A CN 97116176A CN 97116176 A CN97116176 A CN 97116176A CN 1118874 C CN1118874 C CN 1118874C
Authority
CN
China
Prior art keywords
conductive layer
electric conductor
semiconductor device
conductor part
opening portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN97116176A
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English (en)
Chinese (zh)
Other versions
CN1186343A (zh
Inventor
中谷康雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1186343A publication Critical patent/CN1186343A/zh
Application granted granted Critical
Publication of CN1118874C publication Critical patent/CN1118874C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN97116176A 1996-12-24 1997-08-08 半导体装置及其制造方法 Expired - Fee Related CN1118874C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8343351A JPH10189898A (ja) 1996-12-24 1996-12-24 半導体装置およびその製造方法
JP343351/96 1996-12-24
JP343351/1996 1996-12-24

Publications (2)

Publication Number Publication Date
CN1186343A CN1186343A (zh) 1998-07-01
CN1118874C true CN1118874C (zh) 2003-08-20

Family

ID=18360855

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97116176A Expired - Fee Related CN1118874C (zh) 1996-12-24 1997-08-08 半导体装置及其制造方法

Country Status (6)

Country Link
US (1) US6188099B1 (ja)
JP (1) JPH10189898A (ja)
KR (1) KR100272941B1 (ja)
CN (1) CN1118874C (ja)
DE (1) DE19726069B4 (ja)
TW (1) TW365703B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3998373B2 (ja) * 1999-07-01 2007-10-24 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
KR100359163B1 (ko) * 1999-12-31 2002-10-31 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
US6329291B1 (en) * 2000-01-28 2001-12-11 United Microelectronics Corp. Method of forming a lower storage node of a capacitor for dynamic random access memory
KR100533969B1 (ko) * 2000-10-04 2005-12-07 주식회사 하이닉스반도체 이너 캐패시터의 전하저장 전극 형성방법
JP2003243535A (ja) * 2002-02-15 2003-08-29 Mitsubishi Electric Corp 半導体記憶装置
TWI271872B (en) * 2002-12-30 2007-01-21 Hynix Semiconductor Inc Capacitor and method for fabricating the same
US20070052021A1 (en) * 2005-08-23 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Transistor, and display device, electronic device, and semiconductor device using the same
JP4483896B2 (ja) * 2007-05-16 2010-06-16 ソニー株式会社 半導体装置及びその製造方法
KR20130106151A (ko) 2012-03-19 2013-09-27 에스케이하이닉스 주식회사 고종횡비 캐패시터 제조 방법
JP2015028990A (ja) * 2013-07-30 2015-02-12 株式会社東芝 不揮発性記憶装置
TWI723848B (zh) * 2020-04-17 2021-04-01 華邦電子股份有限公司 記憶體結構及其製造方法
CN113555363B (zh) * 2020-04-24 2023-11-07 华邦电子股份有限公司 存储器结构及其制造方法
US11342332B2 (en) * 2020-06-23 2022-05-24 Winbond Electronics Corp. Memory structure and manufacturing method therefor

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
US5130885A (en) 1991-07-10 1992-07-14 Micron Technology, Inc. Dram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surface
JPH0555505A (ja) 1991-08-29 1993-03-05 Nec Corp 半導体メモリセルとその形成方法
JPH05304267A (ja) 1992-04-27 1993-11-16 Nec Yamaguchi Ltd 半導体集積回路装置の製造方法
JP2848135B2 (ja) 1992-07-03 1999-01-20 日本電気株式会社 半導体記憶装置の製造方法
US5539612A (en) 1992-09-08 1996-07-23 Texas Instruments Incorporated Intermediate structure for forming a storage capacitor
JP3172321B2 (ja) 1993-04-26 2001-06-04 三洋電機株式会社 半導体記憶装置の製造方法
KR960011664B1 (ko) * 1993-05-21 1996-08-24 현대전자산업 주식회사 반도체 장치의 캐패시터 형성방법
JPH0730077A (ja) 1993-06-23 1995-01-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH0774325A (ja) * 1993-06-29 1995-03-17 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
KR950021644A (ko) * 1993-12-31 1995-07-26 김주용 반도체 기억장치 및 그 제조방법
JPH07235612A (ja) * 1994-02-23 1995-09-05 Mitsubishi Electric Corp 半導体装置のメモリセル構造
US5418180A (en) * 1994-06-14 1995-05-23 Micron Semiconductor, Inc. Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon
JP2679671B2 (ja) * 1995-03-30 1997-11-19 日本電気株式会社 半導体記憶装置の容量素子の製造方法
US5602051A (en) * 1995-10-06 1997-02-11 International Business Machines Corporation Method of making stacked electrical device having regions of electrical isolation and electrical connection on a given stack level
US5940713A (en) * 1996-03-01 1999-08-17 Micron Technology, Inc. Method for constructing multiple container capacitor
US5811331A (en) * 1996-09-24 1998-09-22 Taiwan Semiconductor Manufacturing Company Ltd. Formation of a stacked cylindrical capacitor module in the DRAM technology
US5668038A (en) * 1996-10-09 1997-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. One step smooth cylinder surface formation process in stacked cylindrical DRAM products
US5748521A (en) * 1996-11-06 1998-05-05 Samsung Electronics Co., Ltd. Metal plug capacitor structures for integrated circuit devices and related methods

Also Published As

Publication number Publication date
KR19980063330A (ko) 1998-10-07
US6188099B1 (en) 2001-02-13
KR100272941B1 (ko) 2000-11-15
DE19726069B4 (de) 2004-11-04
CN1186343A (zh) 1998-07-01
DE19726069A1 (de) 1998-07-02
TW365703B (en) 1999-08-01
JPH10189898A (ja) 1998-07-21

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