CN106847814B - 在栅绕式架构中的锗和iii-v纳米线及纳米带的cmos实现 - Google Patents

在栅绕式架构中的锗和iii-v纳米线及纳米带的cmos实现 Download PDF

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CN106847814B
CN106847814B CN201710001499.1A CN201710001499A CN106847814B CN 106847814 B CN106847814 B CN 106847814B CN 201710001499 A CN201710001499 A CN 201710001499A CN 106847814 B CN106847814 B CN 106847814B
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semiconductor
group
nanowire channel
channel region
semiconductor nanowire
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CN106847814A (zh
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M·拉多萨夫列维奇
R·皮拉里塞泰
G·杜威
N·慕克吉
J·卡瓦列罗斯
W·拉赫马迪
V·勒
B·舒-金
M·V·梅茨
R·周
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Intel Corp
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Abstract

公开了用于在同一衬底(例如硅)上的异质材料，例如III‑V族半导体材料和IV族半导体(例如Ge)的共同集成的架构和技术。在实施例中，具有交替的纳米线和牺牲层的多层异质半导体材料堆叠体用来释放纳米线并允许完全围绕纳米线晶体管的沟道区的同轴栅极结构的形成。在实施例中，单独的PMOS和NMOS沟道半导体材料与具有交替的Ge/III‑V层的覆盖层的起始衬底共同集成。在实施例中，在单独PMOS和单独NMOS器件内的多个堆叠的纳米线的垂直集成使能给定的布局区域的相当大的驱动电流。

Description

在栅绕式架构中的锗和III-V纳米线及纳米带的CMOS实现
本申请为分案申请，其原申请是2014年6月18日进入中国国家阶段、国际申请日为2011年12月19日的国际专利申请PCT/US2011/065914，该原申请的中国国家申请号是201180075625.9，发明名称为“在栅绕式架构中的锗和III-V纳米线及纳米带的CMOS实现”。
技术领域
本发明的实施例通常涉及微电子器件架构和制造，且更特别地涉及CMOS的异质纳米线晶体管。
背景技术
硅CMOS技术已成为过去几十年来微电子器件的支柱。然而，摩尔定律将在某个点要求基于非硅器件技术的扩展。虽然早已在除了硅以外的材料(例如III-V族半导体)中制造微电子器件，在这些介质中的MOS技术从高容量制造(HVM)观点被认为是不成熟的。
当代III-V族技术的另一问题源于合理地配合得很好的n型和p型器件的缺乏，因为虽然III-V族材料系统具有高电子迁移率，但空穴迁移率低得多。因此，从高级硅CMOS到III-V族器件的过渡可能需要对到目前为止与基于硅的器件共同发展的电路设计的显著中断，且结果是依赖于CMOS逻辑的互补晶体管的可用性。
能够实现具有基于III-V族的微电子器件的CMOS的器件架构和制造技术提供了在更多的几十年间扩展摩尔定律的优点。
附图说明
本发明的实施例作为例子而不是作为限制被示出，且可参考当结合附图考虑时的下面的详细描述来更充分理解本发明的实施例，在附图中：
图1是根据一实施例的在同一衬底上的与PMOS IV族纳米线晶体管集成的NMOSIII-V纳米线晶体管的等距视图；
图2A是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的沟道区的横截面的图示；
图2B是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的外赋区的横截面的图示；
图3A是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的沟道区的横截面的图示；
图3B是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的外赋区的横截面的图示；
图4A是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的沟道区的横截面的图示；
图4B是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的外赋区的横截面的图示；
图5A是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的沟道区的横截面的图示；
图5B是根据一实施例的穿过与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的外赋区的横截面的图示；
图6是示出根据一实施例的在同一衬底上制造与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的方法的流程图；
图7是示出根据一实施例的在同一衬底上制造与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的方法的流程图；
图8A和8B是示出根据本发明的一实施例的用于制造与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的起始衬底的横截面图示；以及
图9示出根据本发明的一个实施方式的计算设备。
具体实施方式
在下面的描述中，阐述了很多细节，然而，对本领域中的技术人员来说明显的是，可在没有这些特定细节的情况下实施本发明。在一些实例中，公知的方法和器件以方框图形式而不是详细地示出，以便避免使本发明难理解。在整个这个说明书中对“一实施例”的提及意味着联系该实施例描述的特定的特征、结构、功能或特性包括在本发明的至少一个实施例中。因此，短语“在一实施例中”在整个这个说明书的不同地方中的出现并不一定指本发明的同一实施例。此外，特定的特征、结构、功能或特性可在一个或多个实施例中以任何适当的方式组合。例如，第一实施例可与第二实施例在这两个实施例不相互排他的任何地方组合。
术语“耦合”和“连接”连同其派生词可在本文用于描述部件之间的结构关系。应理解，这些术语并不被打算作为彼此的同义词。更确切地，在特定的实施例中，“连接”可用于指示两个或多个元件彼此直接物理或电接触。“耦合”可用于指示两个或多个元件彼此直接或间接(利用在它们之间的其它中间元件)物理或电接触，和/或两个或多个元件彼此协作或交互(例如在产生影响的关系中)。
如本文使用的术语“在…之上”、“在…之下”、“在…之间”和“在…上”指一个材料层相对于其它层的相对位置。因此例如，布置在另一层之上或之下的一个层可与其它层直接接触或可具有一个或多个中间层。而且，布置在两个层之间的一个层可与该两个层直接接触或可具有一个或多个中间层。相比之下，在第二层“上”的第一层与该第二层直接接触。
本文描述的是用于在同一衬底(例如硅)上的异质材料(例如III-V族半导体材料和IV族半导体(例如Ge))的共同集成的架构和技术。在实施例中，采用具有交替的纳米线层和牺牲层的多层异质半导体材料堆叠体来释放纳米线并且允许完全围绕纳米线晶体管的沟道区的同轴栅极结构的形成。在实施例中，利用具有交替的Ge/III-V层的覆盖层(即，整片)堆叠体的起始衬底来共同集成单独的PMOS沟道半导体材料和NMOS沟道半导体材料。在实施例中，在单独PMOS和单独NMOS器件内的多个堆叠的纳米线的垂直集成使能了用于给定的布局区域的相当大的驱动电流。
图1是根据实施例的在同一衬底上101的与NMOS III-V族纳米线器件(晶体管)120集成的PMOS纳米线器件(晶体管)110的等距视图。PMOS纳米线器件110包括由布置在第一衬底区102之上的IV族半导体组成的一个或多个PMOS纳米线112A、112B，而NMOS纳米线器件120包括由布置在第二衬底区103之上的III-V族半导体组成的一个或多个NMOS纳米线122A、122B。用于PMOS和NMOS器件的不同纳米线材料提供有助于具有超过基于硅的CMOS器件的性能能力的CMOS的晶体管级架构。
在例证性实施例中，衬底101是硅，绝缘或半绝缘的，和/或具有布置在其上的绝缘或半绝缘层，PMOS器件110和NMOS器件120布置在该绝缘或半绝缘层之上。在一个这样的实施例中，衬底105包括在支承衬底上生长或转移到施主衬底(支承和施主衬底未被描绘)上的缓冲结构的顶层。在特定的实施例中，衬底101包括硅支承衬底，缓冲层外延地在硅支承衬底上生长，然而，支承衬底也可具有可以或可以不与硅组合的替代材料，该替代材料包括但不限于锗、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、碳(SiC)和蓝宝石。在另一实施例中，衬底101包括可例如通过转移半导体的一层或多层而形成的介电层，例如隐埋氧化物(BoX)，纳米线从该半导体的一层或多层形成到衬底101上。
如在图1中进一步示出的，对于PMOS和NMOS器件110、120中的每个，纳米线的纵向长度在沟道区(栅极导体115和125完全环绕在该沟道区周围以形成同轴纳米线结构)、外赋区(介电隔片116A、116B、126A和126B布置在该外赋区周围)和源极/漏极区113、123之间被划分。在至少沟道区内，纳米线112A、122A通过中间材料与衬底101物理地分离。对于本文描述的实施例，纳米线112A、122A的横向横截面几何形状可从圆形相当大地变化到矩形，使得纳米线112A、122A的厚度(即，在z维度上的)可大致等于纳米线112A、122A的宽度(即，在x维度上)，或纳米线112A、122A的厚度和宽度可明显不同于彼此(即，在物理上类似于带)以形成圆柱形和平行六面体半导体主体。对于带实施例，为了减小的被纳米线遮蔽的立体角起见，有利的实施例具有大于x尺寸的z尺寸，从而提高通过栅极导体115、125的同轴封装。对于示例性实施例，纳米线112A、122A的宽度在5和50纳米(nm)之间，且更特别地在5和10nm之间，但这可根据实施方式而变化。
通常，纳米线112A、122A是结晶的，具有比“多晶”材料大得多的长范围数量级。在示例性实施例中，沟道区实质上是单晶体的，且虽然可在本文被称为“单晶的”，普通技术人员将认识到，低水平的晶体缺陷可能仍然存在，作为不完美的外延生长工艺的人工产物。PMOS器件110和NMOS器件120中的至少一个在衬底101没有与纳米线112A和/或122A的至少沟道区相同的材料的意义上是异质的。
在示例性实施例中，PMOS纳米线112A基本上由锗(Ge)组成。锗对于高空穴迁移率是有利的，并且还具有对Ge层和III-V族半导体层的优质外延堆叠体足够的与一些III-V族半导体材料匹配的晶格参数。PMOS纳米线112A由IV族合金(例如SiGe)组成或由硅组成的替代实施例也是可能的。在实施例中，NMOS纳米线122A基本上由III-V族半导体材料组成。在PMOS纳米线112A基本上由锗组成的示例性实施例中，NMOS纳米线122A基本上由GaAs组成。在其它实施例中，NMOS纳米线122A基本上由InAs、III-N族(例如GaN)、InP、包括GaAs的三元合金、包括InAs的三元合金、包括InP的三元合金或包括III-N族的三元合金或包括GaAs的四元合金、包括InAs的四元合金、包括InP的四元合金或包括III-N族的四元合金组成。在另外的实施例中，为了最高的载流子迁移率，在PMOS纳米线112A和NMOS纳米线122A中的沟道区实质上是无掺杂的。
如在图1中进一步示出的，纳米线112A、122A还分别包括源极/漏极区113、123。在实施例中，源极区包括用于相应的PMOS和NMOS纳米线的存在于沟道区中的相同的半导体材料，但源极和漏极区还包括较高浓度的掺杂物。在示例性实施例中，PMOS纳米线源极/漏极区113包括高p型杂质(P+掺杂物)，而NMOS纳米线源极/漏极区123包括高n型杂质(即，N+掺杂物)。在某些实施例中，源极和漏极区维持与在纳米线112A和123A的沟道区内相同的单晶性。在实施例中，源极/漏极113、123中的至少一个与欧姆金属(未描绘)接触，欧姆金属同轴地完全环绕在纳米线112A、122A周围以填充在纳米线和衬底101之间的间隙中。源极/漏极触头还可包括具有与纳米线112A、122A不同的构成的外延生长的半导体。例如，隧道结(例如，环绕在纳米线122A的源极区123周围的p+层)可提供极陡的导通和关断(即，提高的子阈值性能)。作为另一例子，原位掺杂的半导体可以完全生长在释放的源极/漏极113、123周围，以获得较低的接触电阻。
在实施例中，如图1所示，PMOS纳米线器件110和NMOS纳米线器件120都包括纳米线的垂直堆叠体以实现在衬底101之上的给定器件覆盖区(即，布局区)的较大载流能力(例如，较大驱动电流)。取决于制造限制，可垂直地堆叠任何数量的纳米线，而每个纳米线的纵轴实质上平行于衬底101的顶表面。在图1所示的示例性实施例中，在至少沟道区内，PMOS纳米线112A、112B中的每个具有相同的IV族半导体材料(例如Ge)。同样地，在沟道区内，NMOS纳米线122A、122B中的每个具有相同的III-V族半导体材料(例如GaAs)。在另外的实施例中，PMOS纳米线112A、112B中的每个被栅极导体115同轴地环绕(例如，如在图2A、3A、4A、5A中进一步示出的)。类似地，对于每个堆叠的纳米线，触点金属化和/或凸起的(再生长的)源极/漏极区同轴地完全环绕在源极/漏极区113、123周围。
图2A、3A、4A和5A示出沿着穿过PMOS和NMOS器件110、120的沟道区的x-z平面(在图1中由虚线A区分)的横截面视图。图2B、3B、4B和5B示出沿着穿过PMOS和NMOS器件110、120的外赋区的x-z平面(在图1中由虚线B却分)的横截面视图。
图2A和2B示出示例性实施例，其中PMOS纳米线112A、112B实质上与NMOS纳米线122A、122B共平面。如对图2A中描述的沟道区所示的，PMOS纳米线112A的纵轴153A布置在衬底101之上的第一距离H1处，而NMOS纳米线122A的纵轴布置在衬底101之上的第二距离H2处，第二距离H2实质上等于H1(即，小于10％的差异)。此外，在纵轴153A、153B之间的节距P1实质上等于(即，小于10％的差异)NMOS纳米线122A和122B的纵轴之间的节距P2。
图2A进一步示出栅极导体115和125，每个栅极导体与栅极导体(140、145)的MOS结构相称，栅极导体(140、145)通过布置在栅极导体之下的栅极介电材料(140、145)与纳米线(112、122)电隔离。环绕式栅极构架的同轴性质在图2A中是明显的，因为栅极介电材料布置在衬底层100和栅极导体之间。栅极导体也布置在纳米线112A、122A和衬底101之间。复合地，栅极介电材料240可包括在本领域中已知适合于FET栅极电介质(和/或沟道钝化)的任何材料中的一个或多个，且优选地是高K电介质(即，具有比氮化硅(Si3N4)的介电常数大的介电常数)，例如但不限于高K氧化物(如氧化钆(Gd2O3)、氧化铪(HfO2))、高K硅酸盐(例如HfSiO、TaSiO、AlSiO)和高K氮化物(例如HfON)。
类似地，栅极导体可具有适合于特定的纳米线半导体构成的栅极电极以及期望的阈值电压和操作模式(增强或耗尽)的在本领域中已知的任何材料。在某些实施例中，对PMOS栅极电介质140和NMOS栅极电介质145使用相同的栅极介电材料。通常，栅极导体构成包括功函数金属，功函数金属可被选择为对PMOS栅极导体115和NMOS栅极导体125中的每个是不同的，以得到期望阈值电压(Vt)(例如大于0V等)。示例性导电栅极材料包括钨(W)、铝(Al)、钛(Ti)、钽(Ta)、镍(Ni)、钼(Mo)、锗(Ge)、铂(Pt)、金(Au)、钌(Ru)、钯(Pd)、铱(Ir)、它们的合金和其硅化物、碳化物、氮化物、磷化物和碳氢化物。
参考图2B，在实施例中，沿着纵向纳米线长度的至少一部分物理地接合两个垂直堆叠的纳米线，其中通过中间第三晶体半导体材料层来布置隔片。例如，PMOS纳米线112A通过中间(第三)半导体层210A接合到衬底101，而PMOS纳米线112A和112B通过中间半导体层210B接合在一起。类似地，NMOS纳米线122A通过中间(第四)半导体层220A接合到衬底101，而NMOS纳米线122A和122B通过中间半导体层220B接合在一起。虽然图2B中描绘的结构可以部分地是特定制造工艺的人工制品，其中中间层210、220不被完全移除(例如，被隔片116A、126A掩蔽)，但是它示出用来释放在图2A中描绘的沟道区中的纳米线的半导体材料堆叠体。
通常，中间半导体层210A、210B具有可维持PMOS纳米线112A、112B的期望结晶度的任何牺牲半导体材料，并适用于选择性地针对PMOS纳米线112A、112B被移除。在PMOS纳米线112A、112B是Ge的示例性实施例中，牺牲半导体层210A、210B包括SiGe。同样，中间半导体层220A、220B具有可维持NMOS纳米线122A、122B的期望结晶度的任何牺牲半导体材料，并适用于选择性地针对PMOS纳米线112A、112B被移除。在NMOS纳米线122A、122B是GeAs的一个示例性实施例中，牺牲半导体层220A、220B包括AlGaAs。特别地，可基于期望纳米线节距(例如P1、P2)、栅极堆叠体沉积约束、堆叠体型面控制等作为设计的问题来选择牺牲半导体层210、220的厚度(z维度)。
图3A和3B示出示例性实施例，其中PMOS纳米线112A、112B从NMOS纳米线122A、122B沿着z维度移动或偏移。如对图3A中描绘的沟道区所示的，PMOS纳米线112A的纵轴布置在衬底101之上的第一距离H1处，而NMOS纳米线122A的纵轴布置在衬底101之上的第二距离H2处，第二距离H2不同于H1(即，明显大于10％的差异)。在例证性实施例中，第二距离H2大致等于第一距离H1加上第一沟道区(z维度)的厚度之和，因为纳米线112A和122A实质上是相等的。如也示出的，在相邻PMOS纳米线112A、112B之间的间隙G1实质上等于NMOS纳米线122A的厚度(直径)(在图3B中被示为T3)。在相邻NMOS纳米线122A、122B之间的间隙G2实质上等于PMOS纳米线112B的厚度(直径)(在图3B中被示为T4)。因此，节距P1和P2实质上是相等的。
如进一步在图3B中示出的，在外赋区内，PMOS器件110的半导体材料堆叠体与NMOS器件120的相同。基本上，在PMOS纳米线(例如112B)中的IV族材料用作在NMOS器件120中的牺牲材料，而在NMOS纳米线(例如122A)中的III-V族材料用作在PMOS器件110中的牺牲材料。在示例性实施例中，PMOS器件110和NMOS器件120都包括与III-V族半导体(例如GaAs)交替的IV族半导体(例如Ge)层。半导体层的这个双重功能是有利的，因为它允许由同时覆盖衬底的第一和第二区(例如图1中的区102和103)的同一覆盖过程形成堆叠体的PMOS/NMOS对。
也在图2A、2B的实施例中示出的，PMOS纳米线112布置成通过也存在于NMOS器件堆叠体中的第三牺牲半导体材料210A与衬底101分开。关于图2A、2B，第三牺牲材料半导体210A提供布置成最接近于衬底的纳米线(例如PMOS纳米线112A)的绝缘体以允许环绕式栅极堆叠体。如在图2A和2B中所描述的采用的，第三牺牲半导体材料210A可选择性地针对PMOS纳米线112A和NMOS纳米线122A被移除。例如，在一个实施例中，第三牺牲半导体材料210A是IV族半导体(SiGe)，而在另一实施例中，第三牺牲半导体材料210A是III-V族半导体(AlGaAs)。在其它实施例中，第三牺牲半导体材料可被留下，因为器件中的无功能的结构性人工制品不依赖于第三牺牲材料，作为纳米线从衬底101释放的手段(例如第三牺牲半导体材料210A可被留在NMOS器件120中)，使得第三牺牲半导体材料210A对纳米线122A中的III-V族材料的选择性不造成问题。
图3A和3B示出示例性实施例，其中PMOS纳米线112A、112B沿着z维度从NMOS纳米线122A、122B再次实质上偏移。在第三示例性实施例中，第三牺牲层布置在交替的半导体材料堆叠体中的相邻层之间，作为使在第一器件(例如PMOS器件110)中的纳米线之间的垂直间隔从第二器件(例如NMOS器件120)中的纳米线的横截面维度(例如在z维度上的直径或厚度)去耦的手段。
如图4A所示，在相邻PMOS纳米线112A、112B之间的间隙G1大于NMOS纳米线122A(T3，图4B)的厚度，且在相邻NMOS纳米线122A、122B之间的间隙G2大于PMOS纳米线112B(T4，图4B)的厚度。较大的间隙G1、G2可适应于沟道设计的要求和/或栅极堆叠体沉积约束以确保在纳米线112A、112B、122A、122B周围的栅极导体115、125的足够填充。如在图4B中进一步示出的，第三牺牲半导体材料310A布置在纳米线122A、112B之间。在这个实施例中第三牺牲半导体材料310A再次选择性地针对在PMOS纳米线112B中使用的IV族材料和在NMOS纳米线122A中使用的III-V族材料被移除。虽然很多这样的材料存在，优选的材料有助于维持III-V族和IV族材料例如SiGe或AlGaAs的结晶度。
图4A和4B进一步示出示例性实施例，其中蚀刻衬底101的凹槽实现纳米线(例如PMOS纳米线112A)的释放，而没有布置在衬底101上的第三牺牲层。如所示，衬底101具有足以释放PMOS纳米线112A的高度ΔH的凹槽。在沟道区之下的凹槽的部分被回填有栅极导体115。这样的衬底可通过使用对衬底材料是选择性的蚀刻剂从下部切割第一衬底区102中的器件堆叠体来实现。由于衬底101在衬底区之一中选择性地凹进，PMOS和NMOS器件110、120可由具有最小垂直堆叠高度的相同半导体器件堆叠体形成。
图5A和5B示出示例性实施例，其中在第一器件的纳米线中使用多种材料。该多种材料接着在第二器件中牺牲或保留。如图5A所示，NMOS器件120包括具有底部和顶部势垒层或过渡层132A、132B的纳米线122A以及具有底部和顶部势垒层或过渡层142A、142B的纳米线122B。势垒层或过渡层132A、132B、142A、142B可具有与纳米线122A、122B不同(例如更宽)的带隙，并可起下列项中的一个或多个的作用：结合栅极电介质145限制载流子的混合栅极介电层、沟道钝化层、表层电荷感应层、应变层、或沟道带隙(Vt)调谐层等。
如图3B所示，势垒层或过渡层132A、132B、142A、142B存在于PMOS和NMOS器件110、120的外赋区中，并可作为牺牲层被利用或作为互补器件的沟道区中的部分覆层被保留。例如，可在NMOS器件120的上面描述的功能能力之一中在PMOS器件110中利用势垒层或过渡层132A、132B、142A、142B。然而，在图5A所示的实施例中，势垒层或过渡层132A、132B、142A、142B从PMOS纳米线112A、112B中被移除，连同利用用于NMOS纳米线122A、122B的III-V族半导体一起牺牲。在这个示例性实施例中，从移除势垒层或过渡层132A、132B产生的较大间隙G1然后提供对单独的沟道过渡层138的更多空间，沟道过渡层138像栅极电介质140和栅极导体115一样可环绕在PMOS纳米线112A、112B周围。同样，通过移除势垒层或过渡层142A、142B来提供较大的间隙G2。
现在提供制造过程实施例的突出部分的简要描述。图6和7是示出根据本发明的实施例的在同一衬底上制造与PMOS IV族纳米线晶体管集成的NMOS III-V纳米线晶体管的方法601和701的流程图。虽然方法601和701强调某些操作，那些操作可能要求多得多的工艺序列，且没有通过图6和7中的操作的编号或操作的相对定位来暗示顺序。通常，方法601利用具有沉积在半导体堆叠体中的覆盖层(其如图8A所示，在衬底810、820的两个区中是相同的)的起始衬底，而方法701要求具有沉积在衬底810、820的两个区中的在材料上不同的堆叠体的起始衬底。
首先参考图6，方法601在操作610以布置在衬底的第一和第二区上的PMOS和NMOS半导体材料层的交替堆叠体开始。例如，在图8A中描绘的例证性实施例中，起始衬底801具有半导体材料803的相同堆叠体，其中IV族半导体层与布置在区810和820之上的III-V族半导体层交替。半导体材料803的交替堆叠体可在衬底101上外延地生长或被转移和粘合。
随后，在操作620，例如通过各向异性等离子体蚀刻将堆叠体803蚀刻到第一区810中的第一鳍状物和第二区820中的第二鳍状物中。取决于IV族和III-V族材料，可利用基于常规技术的一种或多种等离子蚀刻工艺。在操作630，从第一鳍状物移除NMOS材料以形成在IV族半导体层和衬底101之间的间隙来释放沿着纵向沟道长度的PMOS纳米线。例如，在起始材料801(图8A)中，在第一区810内使用常规技术(例如各向同性湿和/或干蚀刻化学性质)针对IV族层选择性地移除III-V族层以释放PMOS纳米线112A、112B。在操作640，从第二鳍状物针对III-V族半导体层选择性地移除PMOS材料以形成在III-V族半导体层和衬底之间的间隙来释放沿着至少其纵向沟道长度的NMOS纳米线。例如，在堆叠体803(图8A)中，在第二区820内，针对III-V族层选择性地移除IV族层以释放NMOS纳米线122A和122B。
在操作650，接着使用任何常规沉积技术根据所利用的材料完全围绕PMOS和NMOS纳米线(即，同轴结构)而形成栅极堆叠体。在特定的实施例中，利用替代栅极技术，如在本领域中对非平面硅晶体管技术已知的。在一个实施例中，形成牺牲栅极(堆叠体)，在纳米线112A、112B中的源极和漏极区是p型掺杂的，而在纳米线122A、122B中的源极和漏极区是n型掺杂的(和/或环绕有凸起的源极漏极区)，牺牲栅极被移除，且非牺牲栅极堆叠体形成。用于形成非牺牲栅极的示例性技术包括对高K栅极介电材料的原子层沉积(ALD)和对栅极导体材料的ALD或物理气相沉积(PVD)。方法610然后在操作660使用常规处理(例如夹层介电形成、在PMOS和NMOS器件中的每个上的源极和漏极触点形成等)来完成。
接着参考图7，方法701在操作715以沉积在衬底的第一区上的交替的PMOS半导体材料层和第一牺牲材料的第一堆叠体和沉积在衬底的第二区上的交替的NMOS半导体材料层和第二牺牲材料的第二堆叠体开始。例如，在图8B中描绘的例证性实施例中，起始材料802包括沉积在第一衬底区810之上的半导体材料804的第一堆叠体，IV族半导体层与第一牺牲材料层210A、210B交替。起始材料802还包括沉积在第二衬底区820之上的半导体材料805的第二堆叠体，III-V族半导体层与第二牺牲材料层220A、220B交替。对于这个实施例，半导体材料的每个不同的交替堆叠体可外延地生长在衬底101上(例如在场隔离介电层850中形成的沟槽中)，且然后材料的侧壁被暴露(例如通过使场隔离介电层850凹进)。
在操作725，通过蚀刻剂在IV族半导体材料上选择性地移除第一牺牲材料层210A、210B以形成PMOS纳米线112A、112B来释放PMOS纳米线112A、112B。在操作735，通过蚀刻剂在III-V族半导体材料上选择性地移除第二牺牲材料层220A、220B以释放NMOS纳米线122A、122B。在操作745，根据功函数和所利用的覆层材料使用任何常规沉积技术完全环绕在PMOS和NMOS纳米线(即，形成具有纳米线的同轴结构的功函数金属)的所释放的沟道区周围而形成栅极堆叠体。在特定的实施例中，利用替代栅极技术，如在非平面硅晶体管技术的领域中已知的。在一个实施例中，形成牺牲栅极(堆叠体)，在纳米线112A、112B中的源极和漏极区是p型掺杂的，而在纳米线122A、122B中的源极和漏极区是n型掺杂的(和/或环绕有凸起的源极漏极区)，牺牲栅极被移除，且非牺牲栅极堆叠体形成。方法701然后在操作660使用常规处理(例如夹层介电形成、在PMOS和NMOS器件中的每个上的源极和漏极接触形成等)来完成。
在任一方法601或701中，应理解，沉积在衬底上的半导体堆叠体还可包括在本文的其它地方描述的一个或多个中间半导体层(例如通过使第三牺牲层在第一和第二区810、820中的衬底之上外延地生长)。对于这样的实施例，操作620和725接着还包括针对IV族半导体层选择性地蚀刻第三牺牲层以在第一区810中形成在IV族半导体层和衬底之间的间隙，其比III-V族半导体层的厚度宽。类似地，针对III-V族半导体层选择性地蚀刻第三牺牲层以在第二区820中形成在III-V族半导体层和衬底之间的间隙，其比IV族半导体层的厚度宽。
图9示出根据本发明的一个实施方式的计算设备1000。计算设备1000容纳板1002。板1002可包括多个部件，包括但不限于处理器1004和至少一个通信芯片1006。处理器1004物理地和电气地耦合到板1002。在一些实施方式中，至少一个通信芯片1006也物理地和电气地耦合到板1002。在另外的实施方式中，通信芯片1006是处理器1004的部分。
根据其应用，计算设备1000可包括其它部件，其他部件可以或可以不物理地和电气地耦合到板1002。这些其它部件可包括但不限于易失性存储器(例如DRAM)、非易失性存储器(例如ROM)、闪存、图形处理器、数字信号处理器、加密处理器、芯片组、天线、显示器、触摸屏显示器、触摸屏控制器、电池、音频编码解码器、视频编码解码器、功率放大器、全球定位系统(GPS)设备、罗盘、加速度计、陀螺仪、扬声器、照相机和大容量存储设备(例如硬盘驱动器、光盘(CD)、数字通用盘(DVD)等)。
通信芯片1006使能用于到和来自计算设备1000的数据的传输的无线通信。术语“无线”及其派生词可用于描述可通过使用经由非固体介质的经调制电磁辐射来传递数据的电路、设备、系统、方法、技术、通信通道等。该术语并不暗示相关的设备不包含任何电线，虽然在一些实施例中它们可以不包含电线。通信芯片1006可实现多种无线标准或协议中的任意，包括但不限于Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE802.20、长期演进(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、蓝牙、其派生物以及被指定为3G、4G、5G和更高代的任何其它无线协议。计算设备1000可包括多个通信芯片1006。例如，第一通信芯片1006可专用于较短距离无线通信，例如Wi-Fi和蓝牙，而第二通信芯片1006可专用于较长距离无线通信，例如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO和其它。
计算设备1000的处理器1004包括封装在处理器1004内的集成电路。在本发明的一些实施方式中，处理器的集成电路管芯包括一个或多个器件，例如根据在本文的其它地方描述的实施例的PMOS器件110和NMOS器件120(图1)。术语“处理器”可以指处理例如来自寄存器和/或存储器的电子数据以将该电子数据转换成可存储在寄存器和/或存储器中的其它电子数据的任何设备或设备的部分。
通信芯片1006还可包括封装在通信芯片1006内的集成电路管芯。根据本发明的另一实施方式，通信芯片的集成电路裸片包括一个或多个器件，例如根据在本文的其它地方描述的实施例的PMOS器件110和NMOS器件120(图1)。
在另外的实施方式中，容纳在计算设备1000内的另一部件可包含集成电路管芯，集成电路管芯包括一个或多个器件，例如PMOS器件110和NMOS器件120，如在图1中所示的和在本文的其它地方描述的那样。
在各种实施方式中，计算设备1000可以是膝上型计算机、上网本、笔记本计算机、超级笔记本计算机、智能电话、平板计算机、个人数字助理(PDA)、超移动PC、移动电话、桌上型计算机、服务器、打印机、扫描仪、监视器、机顶盒、娱乐控制单元、数字照相机、便携式音乐播放器或数字视频记录器。在另外的实施方式中，设备1000可以是处理数据的任何其它电子设备。
应理解，上面的描述是例证性的而不是限制性的。例如，虽然附图中的流程图示出由本发明的某些实施例执行的操作的特定顺序，应理解，这样的顺序可能不是要求的(例如，替代的实施例可以按不同的顺序执行操作，组合某些操作，重叠某些操作，等等)。此外，对于在阅读并理解上面的描述后的本领域中的技术人员来说，很多其它实施例将是明显的。虽然参考特定的示例性实施例描述了本发明，应认识到，本发明不限于所描述的实施例，而是可在所附权利要求的精神和范围内的修改和变更下实践本发明。应因此参考所附权利要求连同这样的权利要求享有权利的等效形式的完整范围来确定本发明的范围。

Claims (28)

1.一种半导体结构，包括：
布置在衬底之上的第一半导体器件，其中，所述第一半导体器件包括：
IV族半导体纳米线沟道区；
与所述IV族半导体纳米线沟道区电耦合的第一源极区和第一漏极区；以及
第一栅极堆叠体，其包括同轴地完全环绕在所述IV族半导体纳米线沟道区周围的栅极绝缘体和栅极导体；以及
布置在所述衬底之上的第二半导体器件，其中，所述第二半导体器件包括：
III-V族半导体纳米线沟道区；
位于所述III-V族半导体纳米线沟道区的顶表面和底表面上的势垒层，所述势垒层的带隙宽于所述III-V族半导体纳米线沟道区的带隙；
与所述III-V族半导体纳米线沟道区电耦合的第二源极区和第二漏极区；以及
第二栅极堆叠体，其包括同轴地完全环绕在所述III-V族半导体纳米线沟道区周围的栅极绝缘体和栅极导体，其中，所述第一栅极堆叠体布置在所述衬底的第一表面上，所述第二栅极堆叠体布置在所述衬底的第二表面上。
2.如权利要求1所述的半导体结构，其中，所述第一源极区和第一漏极区是p型，且其中，所述第二源极区和第二漏极区是n型。
3.如权利要求1所述的半导体结构，其中，所述IV族半导体纳米线沟道区由锗(Ge)组成。
4.如权利要求1所述的半导体结构，其中，所述IV族半导体纳米线沟道区布置在IV族半导体纳米线沟道区的垂直堆叠体内。
5.如权利要求4所述的半导体结构，还包括：
位于所述第一栅极堆叠体的相对侧壁上的一对介电隔片；以及
位于所述一对介电隔片之下的外赋区，所述外赋区耦合到所述IV族半导体纳米线沟道区且耦合到所述第一源极区和第一漏极区。
6.如权利要求5所述的半导体结构，还包括：
位于所述一对介电隔片之下且垂直位于所述外赋区之间的III-V族半导体材料，所述III-V族半导体材料是与所述III-V族半导体纳米线沟道区相同的材料。
7.如权利要求1所述的半导体结构，其中，所述III-V族半导体纳米线沟道区布置在III-V族半导体纳米线沟道区的垂直堆叠体内。
8.如权利要求7所述的半导体结构，还包括：
位于所述第二栅极堆叠体的相对侧壁上的一对介电隔片；以及
位于所述一对介电隔片之下的外赋区，所述外赋区耦合到所述III-V族半导体纳米线沟道区且耦合到所述第二源极区和第二漏极区。
9.如权利要求8所述的半导体结构，还包括：
位于所述一对介电隔片之下且垂直位于所述外赋区之间的IV族半导体材料，所述IV族半导体材料是与所述IV族半导体纳米线沟道区相同的材料。
10.如权利要求1所述的半导体结构，其中，所述IV族半导体纳米线沟道区布置在IV族半导体纳米线沟道区的垂直堆叠体内，并且其中，所述III-V族半导体纳米线沟道区布置在III-V族半导体纳米线沟道区的垂直堆叠体内。
11.如权利要求10所述的半导体结构，其中，所述IV族半导体纳米线沟道区与所述III-V族半导体纳米线沟道区之间的垂直隔片横向相邻。
12.如权利要求1所述的半导体结构，其中，所述衬底的所述第一表面位于所述衬底的所述第二表面的下方。
13.如权利要求1所述的半导体结构，其中，所述衬底的所述第二表面位于所述衬底的所述第一表面的下方。
14.如权利要求1所述的半导体结构，还包括：
环绕在所述IV族半导体纳米线沟道区周围的过渡层。
15.一种制造半导体结构的方法，所述方法包括：
在衬底之上形成第一半导体器件，其中，形成所述第一半导体器件包括：
形成IV族半导体纳米线沟道区；
形成与所述IV族半导体纳米线沟道区电耦合的第一源极区和第一漏极区；以及
形成第一栅极堆叠体，其包括同轴地完全环绕在所述IV族半导体纳米线沟道区周围的栅极绝缘体和栅极导体；以及
在所述衬底之上形成第二半导体器件，其中，形成所述第二半导体器件包括：
形成III-V族半导体纳米线沟道区；
在所述III-V族半导体纳米线沟道区的顶表面和底表面上形成势垒层，所述势垒层的带隙宽于所述III-V族半导体纳米线沟道区的带隙；
形成与所述III-V族半导体纳米线沟道区电耦合的第二源极区和第二漏极区；以及
形成第二栅极堆叠体，其包括同轴地完全环绕在所述III-V族半导体纳米线沟道区周围的栅极绝缘体和栅极导体，
其中，所述第一栅极堆叠体布置在所述衬底的第一表面上，所述第二栅极堆叠体布置在所述衬底的第二表面上。
16.如权利要求15所述的方法，其中，所述第一源极区和第一漏极区是p型，且其中，所述第二源极区和第二漏极区是n型。
17.如权利要求15所述的方法，其中，所述IV族半导体纳米线沟道区由锗(Ge)组成。
18.如权利要求15所述的方法，其中，所述IV族半导体纳米线沟道区布置在IV族半导体纳米线沟道区的垂直堆叠体内。
19.如权利要求18所述的方法，还包括：
在所述第一栅极堆叠体的相对侧壁上形成一对介电隔片；以及
在所述一对介电隔片之下形成外赋区，所述外赋区耦合到所述IV族半导体纳米线沟道区且耦合到所述第一源极区和第一漏极区。
20.如权利要求19所述的方法，还包括：
形成III-V族半导体材料，所述III-V族半导体材料位于所述一对介电隔片之下且垂直位于所述外赋区之间，所述III-V族半导体材料是与所述III-V族半导体纳米线沟道区相同的材料。
21.如权利要求15所述的方法，其中，所述III-V族半导体纳米线沟道区布置在III-V族半导体纳米线沟道区的垂直堆叠体内。
22.如权利要求21所述的方法，还包括：
在所述第二栅极堆叠体的相对侧壁上形成一对介电隔片；以及
在所述一对介电隔片之下形成外赋区，所述外赋区耦合到所述III-V族半导体纳米线沟道区且耦合到所述第二源极区和第二漏极区。
23.如权利要求22所述的方法，还包括：
形成IV族半导体材料，所述IV族半导体材料位于所述一对介电隔片之下且垂直位于所述外赋区之间，所述IV族半导体材料是与所述IV族半导体纳米线沟道区相同的材料。
24.如权利要求15所述的方法，其中，所述IV族半导体纳米线沟道区布置在IV族半导体纳米线沟道区的垂直堆叠体内，并且其中，所述III-V族半导体纳米线沟道区布置在III-V族半导体纳米线沟道区的垂直堆叠体内。
25.如权利要求24所述的方法，其中，所述IV族半导体纳米线沟道区与所述III-V族半导体纳米线沟道区之间的垂直隔片横向相邻。
26.如权利要求15所述的方法，其中，所述衬底的所述第一表面位于所述衬底的所述第二表面的下方。
27.如权利要求15所述的方法，其中，所述衬底的所述第二表面位于所述衬底的所述第一表面的下方。
28.如权利要求15所述的方法，还包括：
形成环绕在所述IV族半导体纳米线沟道区周围的过渡层。
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US20170229354A1 (en) 2017-08-10
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US9123567B2 (en) 2015-09-01
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