CN106167895B - 用于改善流动均匀性的具有面板孔的低体积喷头 - Google Patents

用于改善流动均匀性的具有面板孔的低体积喷头 Download PDF

Info

Publication number
CN106167895B
CN106167895B CN201610345779.XA CN201610345779A CN106167895B CN 106167895 B CN106167895 B CN 106167895B CN 201610345779 A CN201610345779 A CN 201610345779A CN 106167895 B CN106167895 B CN 106167895B
Authority
CN
China
Prior art keywords
showerhead
faceplate
diameter
holes
panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610345779.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN106167895A (zh
Inventor
拉梅什·钱德拉塞卡拉
萨昂格鲁特·桑普朗
尚卡尔·斯娃米纳森
弗兰克·L·帕斯夸里
康胡
阿德里安·拉瓦伊
爱德华·奥古斯提尼亚克
行则崎山
克洛伊·巴尔达赛罗尼
萨沙撒耶·瓦拉达拉简
巴莎·萨贾德
詹妮弗·L·彼得拉利亚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN106167895A publication Critical patent/CN106167895A/zh
Application granted granted Critical
Publication of CN106167895B publication Critical patent/CN106167895B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201610345779.XA 2015-05-22 2016-05-23 用于改善流动均匀性的具有面板孔的低体积喷头 Active CN106167895B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562165761P 2015-05-22 2015-05-22
US62/165,761 2015-05-22
US14/850,816 US10378107B2 (en) 2015-05-22 2015-09-10 Low volume showerhead with faceplate holes for improved flow uniformity
US14/850,816 2015-09-10

Publications (2)

Publication Number Publication Date
CN106167895A CN106167895A (zh) 2016-11-30
CN106167895B true CN106167895B (zh) 2020-05-01

Family

ID=57324324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610345779.XA Active CN106167895B (zh) 2015-05-22 2016-05-23 用于改善流动均匀性的具有面板孔的低体积喷头

Country Status (6)

Country Link
US (1) US10378107B2 (enExample)
JP (3) JP6912164B2 (enExample)
KR (3) KR102357417B1 (enExample)
CN (1) CN106167895B (enExample)
SG (2) SG10201604054PA (enExample)
TW (1) TWI713525B (enExample)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
JP5697389B2 (ja) * 2010-09-27 2015-04-08 東京エレクトロン株式会社 プラズマエッチング用の電極板及びプラズマエッチング処理装置
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9797042B2 (en) 2014-05-15 2017-10-24 Lam Research Corporation Single ALD cycle thickness control in multi-station substrate deposition systems
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10483092B2 (en) * 2016-04-13 2019-11-19 Lam Research Corporation Baffle plate and showerhead assemblies and corresponding manufacturing method
US20170314129A1 (en) 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) * 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
KR102523730B1 (ko) * 2016-11-14 2023-04-19 도쿄엘렉트론가부시키가이샤 이중 주파수 표면파 플라즈마 소스
CN110050333B (zh) * 2016-12-08 2023-06-09 应用材料公司 时间性原子层沉积处理腔室
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
CN107516625A (zh) * 2017-07-13 2017-12-26 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统的喷淋头
US10851457B2 (en) * 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
KR102404061B1 (ko) 2017-11-16 2022-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
KR102538177B1 (ko) 2017-11-16 2023-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
CN111433902A (zh) * 2017-12-08 2020-07-17 朗姆研究公司 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US11149350B2 (en) * 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
KR102474847B1 (ko) * 2018-04-25 2022-12-06 삼성전자주식회사 가스 인젝터 및 웨이퍼 처리 장치
US11834743B2 (en) 2018-09-14 2023-12-05 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
US12378665B2 (en) * 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
WO2020185360A1 (en) * 2019-03-08 2020-09-17 Applied Materials, Inc. Porous showerhead for a processing chamber
JP7058239B2 (ja) * 2019-03-14 2022-04-21 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
US12040181B2 (en) 2019-05-01 2024-07-16 Lam Research Corporation Modulated atomic layer deposition
CN110170433A (zh) * 2019-05-28 2019-08-27 昆山国显光电有限公司 一种真空干燥装置
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
DE102019119019A1 (de) 2019-07-12 2021-01-14 Aixtron Se Gaseinlassorgan für einen CVD-Reaktor
KR102505474B1 (ko) 2019-08-16 2023-03-03 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
US11859284B2 (en) * 2019-08-23 2024-01-02 Taiwan Semiconductor Manufacturing Company Ltd. Shower head structure and plasma processing apparatus using the same
CN119980191A (zh) * 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
JP2023501371A (ja) 2019-11-08 2023-01-18 ラム リサーチ コーポレーション 高周波電力増加によるプラズマ強化原子層堆積
TW202131993A (zh) * 2019-11-20 2021-09-01 大陸商中國石油化工科技開發有限公司 一種氣體分布板、流體化裝置和反應方法
JP7313269B2 (ja) * 2019-12-23 2023-07-24 東京エレクトロン株式会社 プラズマ処理装置
JP7637686B2 (ja) * 2020-01-06 2025-02-28 ラム リサーチ コーポレーション 内部輪郭を有するフェースプレートを備えるシャワーヘッド
CN111403256B (zh) * 2020-03-24 2022-03-22 北京北方华创微电子装备有限公司 半导体工艺装置
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
CN113802113A (zh) * 2020-06-13 2021-12-17 拓荆科技股份有限公司 一种改善反应过程中反射功率稳定性的等离子体发生装置
US12139791B2 (en) 2020-06-15 2024-11-12 Lam Research Corporation Showerhead faceplates with angled gas distribution passages for semiconductor processing tools
US12180589B2 (en) 2020-06-24 2024-12-31 Tokyo Electron Limited Showerhead for process tool
TWI727839B (zh) * 2020-06-24 2021-05-11 天虹科技股份有限公司 半導體原子層沉積裝置之噴灑頭結構
US20220122811A1 (en) * 2020-10-16 2022-04-21 Applied Materials, Inc. Electric arc mitigating faceplate
CN112323043A (zh) * 2020-10-30 2021-02-05 泉芯集成电路制造(济南)有限公司 一种气体分配器以及原子层沉积反应设备
US12179223B2 (en) * 2020-10-30 2024-12-31 Kabushiki Kaisha Toshiba Rectifying plate, fluid-introducing apparatus, and film-forming apparatus
CN114045471B (zh) * 2021-11-23 2024-12-31 中国电子科技集团公司第五十五研究所 等离子体增强型化学气相淀积设备薄膜均匀性改善装置
CN114098371B (zh) * 2021-12-02 2023-02-28 郑州航空工业管理学院 一种智能化控制的工业设计展示装置
CN114457321B (zh) * 2022-01-21 2023-03-28 深圳市纳设智能装备有限公司 一种进气装置及cvd设备
KR20240158990A (ko) * 2022-03-15 2024-11-05 램 리써치 코포레이션 기판 프로세싱 시스템을 위한 샤워헤드
JP2025509809A (ja) * 2022-03-25 2025-04-11 ラム リサーチ コーポレーション 堆積厚さの均一性を改善するためのシャワーヘッドアセンブリおよび基板処理システム
US12340980B2 (en) 2022-04-01 2025-06-24 Applied Materials, Inc. Plasma showerhead with improved uniformity
TW202402387A (zh) * 2022-04-06 2024-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體遞送總成及包括氣體遞送總成之反應器系統
WO2024091408A1 (en) * 2022-10-25 2024-05-02 Lam Research Corporation Cupped baffle plates for showerheads of substrate processing systems
KR102822397B1 (ko) * 2023-01-18 2025-06-18 세메스 주식회사 기판 처리 장치
TWI869097B (zh) * 2023-12-06 2025-01-01 銳感豐科技有限公司 Cvd背板裝置
USD1105018S1 (en) 2024-02-12 2025-12-09 Lam Research Corporation Shower head
CN120683474A (zh) * 2024-03-20 2025-09-23 盛美半导体设备(上海)股份有限公司 喷淋头
KR102767497B1 (ko) * 2024-11-28 2025-02-17 주식회사 트리스 튜브 내표면 광휘 소둔 열처리용 가스 분배기

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040023461A1 (en) * 2002-07-30 2004-02-05 Micron Technology, Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
CN1802722A (zh) * 2003-05-22 2006-07-12 艾克塞利斯技术公司 等离子体灰化装置和终点检测方法
CN101916715A (zh) * 2004-02-26 2010-12-15 应用材料有限公司 用于前段工艺制造的原地干洗腔

Family Cites Families (227)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287968A (enExample) 1962-03-15
GB2112715B (en) 1981-09-30 1985-07-31 Shinshu Seiki Kk Ink jet recording apparatus
JPS6187319A (ja) * 1984-10-05 1986-05-02 Hitachi Ltd プラズマを用いた化学気相成膜装置
JPH067542B2 (ja) 1984-11-22 1994-01-26 株式会社日立製作所 製造装置
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4993485A (en) 1989-09-18 1991-02-19 Gorman Jeremy W Easily disassembled heat exchanger of high efficiency
US5186756A (en) 1990-01-29 1993-02-16 At&T Bell Laboratories MOCVD method and apparatus
US5106453A (en) 1990-01-29 1992-04-21 At&T Bell Laboratories MOCVD method and apparatus
EP0462730A1 (en) 1990-06-18 1991-12-27 AT&T Corp. Method and apparatus for forming planar integrated circuit layers
US5212116A (en) 1990-06-18 1993-05-18 At&T Bell Laboratories Method for forming planarized films by preferential etching of the center of a wafer
JP3147392B2 (ja) 1991-03-04 2001-03-19 宇部サイコン株式会社 熱可塑性樹脂組成物
US5286519A (en) 1991-06-25 1994-02-15 Lsi Logic Corporation Fluid dispersion head
US5268034A (en) 1991-06-25 1993-12-07 Lsi Logic Corporation Fluid dispersion head for CVD appratus
FR2682047B1 (fr) 1991-10-07 1993-11-12 Commissariat A Energie Atomique Reacteur de traitement chimique en phase gazeuse.
US5446824A (en) 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5376213A (en) 1992-07-28 1994-12-27 Tokyo Electron Limited Plasma processing apparatus
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
JP3174438B2 (ja) 1993-08-03 2001-06-11 松下電器産業株式会社 プラズマｃｖｄ方法
US5452396A (en) 1994-02-07 1995-09-19 Midwest Research Institute Optical processing furnace with quartz muffle and diffuser plate
JPH07240404A (ja) * 1994-03-02 1995-09-12 Fujitsu Ltd プラズマ処理装置
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5581874A (en) 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US6025013A (en) 1994-03-29 2000-02-15 Schott Glaswerke PICVD process and device for the coating of curved substrates
US5468298A (en) 1994-04-13 1995-11-21 Applied Materials, Inc. Bottom purge manifold for CVD tungsten process
US5643394A (en) 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
DE69518710T2 (de) * 1994-09-27 2001-05-23 Applied Materials Inc Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer
TW331652B (en) 1995-06-16 1998-05-11 Ebara Corp Thin film vapor deposition apparatus
KR100319468B1 (ko) 1995-06-30 2002-04-22 히가시 데쓰로 플라즈마 처리 방법
JPH0945624A (ja) 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JP2879887B2 (ja) * 1995-08-24 1999-04-05 東京エレクトロン株式会社 プラズマ処理方法
US5670218A (en) 1995-10-04 1997-09-23 Hyundai Electronics Industries Co., Ltd. Method for forming ferroelectric thin film and apparatus therefor
DE29517100U1 (de) 1995-10-17 1997-02-13 Zimmer, Johannes, Klagenfurt Strömungsteilungs- und -umformungskörper
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5653479A (en) 1996-02-02 1997-08-05 Vlsi Technology, Inc. Vacuum seal for a ball junction
US5741363A (en) 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US5614026A (en) 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US5948704A (en) 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5996528A (en) 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US5834068A (en) 1996-07-12 1998-11-10 Applied Materials, Inc. Wafer surface temperature control for deposition of thin films
JP3310171B2 (ja) 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
JPH1050678A (ja) * 1996-08-02 1998-02-20 Ibiden Co Ltd プラズマエッチング用電極板
US5806980A (en) 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
US5950925A (en) 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
US5882411A (en) 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6616767B2 (en) 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
JP3341619B2 (ja) 1997-03-04 2002-11-05 東京エレクトロン株式会社 成膜装置
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6112697A (en) 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US6289842B1 (en) 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP2000183029A (ja) 1998-12-17 2000-06-30 Sony Corp ドライアッシング装置
US6409837B1 (en) 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
KR100302609B1 (ko) 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6205869B1 (en) 1999-08-12 2001-03-27 Sentry Equipment Corporation Apparatus and method for sampling fluid from reactor vessel
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6537420B2 (en) 1999-12-17 2003-03-25 Texas Instruments Incorporated Method and apparatus for restricting process fluid flow within a showerhead assembly
US20020134507A1 (en) 1999-12-22 2002-09-26 Silicon Valley Group, Thermal Systems Llc Gas delivery metering tube
DE60003850T2 (de) 1999-12-22 2004-03-11 Aixtron Ag Cvd reaktor und prozesskammer dafür
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6237528B1 (en) 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
DE10007059A1 (de) 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
US6444039B1 (en) 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
KR100406174B1 (ko) 2000-06-15 2003-11-19 주식회사 하이닉스반도체 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
JP3578398B2 (ja) 2000-06-22 2004-10-20 古河スカイ株式会社 成膜用ガス分散プレート及びその製造方法
JP4567148B2 (ja) 2000-06-23 2010-10-20 東京エレクトロン株式会社 薄膜形成装置
US6890861B1 (en) 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
JP2002069650A (ja) 2000-08-31 2002-03-08 Applied Materials Inc 気相堆積方法及び装置並びに半導体装置の製造方法及び装置
DE10043601A1 (de) 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
US6379056B1 (en) 2000-09-12 2002-04-30 Tokyo Electron Limited Substrate processing apparatus
US20040002346A1 (en) * 2000-12-14 2004-01-01 John Santhoff Ultra-wideband geographic location system and method
CN1328766C (zh) 2001-01-22 2007-07-25 东京毅力科创株式会社 处理装置和处理方法
KR100756107B1 (ko) 2001-02-09 2007-09-05 동경 엘렉트론 주식회사 성막 장치
US20020144783A1 (en) 2001-04-05 2002-10-10 Applied Materials, Inc. Apparatus and method for accelerating process stability of high temperature vacuum processes after chamber cleaning
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
JP5079949B2 (ja) 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
WO2002089531A1 (en) 2001-04-30 2002-11-07 Lam Research, Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
EP1421606A4 (en) 2001-08-06 2008-03-05 Genitech Co Ltd PLASMA ACTIVE ATOMIC LAYER (PEALD) DEPOSITION APPARATUS AND METHOD OF FORMING THIN FILM USING SAID APPARATUS
US20030047282A1 (en) 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
US6986324B2 (en) 2001-10-19 2006-01-17 Hydropac/Lab Products, Inc. Fluid delivery valve system and method
JP4121269B2 (ja) 2001-11-27 2008-07-23 日本エー・エス・エム株式会社 セルフクリーニングを実行するプラズマｃｖｄ装置及び方法
US6773507B2 (en) 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
JP2003271218A (ja) 2002-03-15 2003-09-26 Toshiba Corp 半導体製造装置、半導体製造システム及び基板処理方法
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
WO2003097996A1 (en) * 2002-05-21 2003-11-27 Sofitech N.V. Hydraulic fracturing method
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
JP4186536B2 (ja) 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
US7543547B1 (en) 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US20040050326A1 (en) 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US20040050325A1 (en) 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
JP2004115837A (ja) 2002-09-24 2004-04-15 Hitachi Cable Ltd Ｃｖｄ膜の製造方法及びその製造装置
US6716287B1 (en) 2002-10-18 2004-04-06 Applied Materials Inc. Processing chamber with flow-restricting ring
KR100490049B1 (ko) 2003-04-14 2005-05-17 삼성전자주식회사 일체형 디퓨저 프레임을 가지는 ｃｖｄ 장치
US7296534B2 (en) 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
JP4493932B2 (ja) 2003-05-13 2010-06-30 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
JP4115337B2 (ja) 2003-05-30 2008-07-09 俊夫 後藤 プラズマ処理装置
WO2005054537A2 (en) 2003-12-01 2005-06-16 Structured Materials Industries, Inc. System and method for forming multi-component films
US6983892B2 (en) 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US20050221000A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method of forming a metal layer
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US20050241767A1 (en) * 2004-04-30 2005-11-03 Ferris David S Multi-piece baffle plate assembly for a plasma processing system
US20060005767A1 (en) 2004-06-28 2006-01-12 Applied Materials, Inc. Chamber component having knurled surface
US20060027169A1 (en) 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
WO2006026765A2 (en) 2004-09-01 2006-03-09 Axcelis Technologies, Inc. Plasma ashing process for increasing photoresist removal rate and plasma apparatus wuth cooling means
JP4633425B2 (ja) 2004-09-17 2011-02-16 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR20060059305A (ko) 2004-11-26 2006-06-01 삼성전자주식회사 반도체 공정 장비
KR100628888B1 (ko) 2004-12-27 2006-09-26 삼성전자주식회사 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치
KR20060107683A (ko) * 2005-04-11 2006-10-16 삼성전자주식회사 화학 기상 증착 장치
JP4615600B2 (ja) 2005-04-18 2011-01-19 ザ プロクター アンド ギャンブル カンパニー 増粘剤を含有する希釈布地ケア組成物及び陰イオンキャリーオーバー存在下で用いる布地ケア組成物
JP4628900B2 (ja) * 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7641762B2 (en) 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
TWI329135B (en) 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070116872A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
DE102005055468A1 (de) * 2005-11-22 2007-05-24 Aixtron Ag Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor
DE102005056324A1 (de) 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit auswechselbarer Prozesskammerdecke
US8454749B2 (en) 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
US7679024B2 (en) 2005-12-23 2010-03-16 Lam Research Corporation Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
US20070246163A1 (en) 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
JP2008047869A (ja) 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
CN101101887A (zh) 2006-07-06 2008-01-09 通用电气公司 抗腐蚀的晶片处理设备及其制造方法
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
JP2008088228A (ja) 2006-09-29 2008-04-17 Fujifilm Corp インクジェット用インク組成物、及び、これを用いた画像形成方法並びに記録物
US20080081114A1 (en) 2006-10-03 2008-04-03 Novellus Systems, Inc. Apparatus and method for delivering uniform fluid flow in a chemical deposition system
CN101522943B (zh) 2006-10-10 2013-04-24 Asm美国公司 前体输送系统
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US7993457B1 (en) 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US8128750B2 (en) 2007-03-29 2012-03-06 Lam Research Corporation Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components
US8568555B2 (en) 2007-03-30 2013-10-29 Tokyo Electron Limited Method and apparatus for reducing substrate temperature variability
US8069817B2 (en) 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US7862682B2 (en) 2007-06-13 2011-01-04 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
JP5008478B2 (ja) 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
KR101206812B1 (ko) * 2007-07-02 2012-11-30 삼성전자주식회사 잉크젯 프린트헤드 및 그 제조방법
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
JP5422854B2 (ja) 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
JP5058727B2 (ja) 2007-09-06 2012-10-24 東京エレクトロン株式会社 天板構造及びこれを用いたプラズマ処理装置
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
JP2009088229A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜装置、成膜方法、記憶媒体及びガス供給装置
SG152163A1 (en) 2007-10-16 2009-05-29 Novellus Systems Inc Temperature controlled showerhead
KR200454281Y1 (ko) 2007-10-16 2011-06-23 노벨러스 시스템즈, 인코포레이티드 온도 제어 샤워헤드
US8137467B2 (en) 2007-10-16 2012-03-20 Novellus Systems, Inc. Temperature controlled showerhead
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US20090095218A1 (en) 2007-10-16 2009-04-16 Novellus Systems, Inc. Temperature controlled showerhead
CN101488446B (zh) 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置
USD590045S1 (en) 2008-01-31 2009-04-07 Hansgrohe Ag Showerhead
US20090260571A1 (en) 2008-04-16 2009-10-22 Novellus Systems, Inc. Showerhead for chemical vapor deposition
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5268626B2 (ja) 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8293013B2 (en) 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
KR20100093347A (ko) 2009-02-16 2010-08-25 엘지전자 주식회사 태양전지, 태양전지의 제조방법 및 제조장치, 박막 증착방법
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20100263588A1 (en) 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
KR101112974B1 (ko) 2009-06-15 2012-03-02 주식회사 테스 대면적 기판 처리 장치
US8894767B2 (en) 2009-07-15 2014-11-25 Applied Materials, Inc. Flow control features of CVD chambers
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US20110117728A1 (en) 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US9034142B2 (en) 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
TWI563582B (en) 2010-06-03 2016-12-21 Novellus Systems Inc Method of improving film non-uniformity and throughput
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
CN103109357B (zh) 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8733280B2 (en) 2010-12-20 2014-05-27 Intermolecular, Inc. Showerhead for processing chamber
KR101306315B1 (ko) 2011-01-11 2013-09-09 주식회사 디엠에스 화학기상증착 장치
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
WO2012125275A2 (en) 2011-03-11 2012-09-20 Applied Materials, Inc. Apparatus for monitoring and controlling substrate temperature
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US9695510B2 (en) 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
CN102953050B (zh) 2011-08-26 2014-06-18 杭州士兰明芯科技有限公司 大直径mocvd反应器的喷淋头
US8960235B2 (en) 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
KR20140092892A (ko) * 2011-11-08 2014-07-24 어플라이드 머티어리얼스, 인코포레이티드 개선된 증착 균일성을 위한 전구체 분배 피처들
US20130220975A1 (en) 2012-02-27 2013-08-29 Rajinder Dhindsa Hybrid plasma processing systems
US9058960B2 (en) 2012-05-09 2015-06-16 Lam Research Corporation Compression member for use in showerhead electrode assembly
US9447499B2 (en) 2012-06-22 2016-09-20 Novellus Systems, Inc. Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US20140026926A1 (en) * 2012-07-30 2014-01-30 Lam Research Ag Method and apparatus for liquid treatment of wafer-shaped articles
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
JP6136613B2 (ja) 2012-09-21 2017-05-31 東京エレクトロン株式会社 プラズマ処理方法
JP6123208B2 (ja) 2012-09-28 2017-05-10 東京エレクトロン株式会社 成膜装置
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US8975817B2 (en) 2012-10-17 2015-03-10 Lam Research Corporation Pressure controlled heat pipe temperature control plate
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
JP6078354B2 (ja) * 2013-01-24 2017-02-08 東京エレクトロン株式会社 プラズマ処理装置
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US20140235069A1 (en) 2013-02-15 2014-08-21 Novellus Systems, Inc. Multi-plenum showerhead with temperature control
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US9123510B2 (en) * 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
US20150004798A1 (en) 2013-06-28 2015-01-01 Lam Research Corporation Chemical deposition chamber having gas seal
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9490149B2 (en) 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
CN103521956A (zh) 2013-10-10 2014-01-22 光达光电设备科技（嘉兴）有限公司 分离式喷淋头结构
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10107490B2 (en) 2014-06-30 2018-10-23 Lam Research Corporation Configurable liquid precursor vaporizer
US9793096B2 (en) 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US20160343595A1 (en) 2015-05-19 2016-11-24 Lam Research Corporation Corrosion resistant gas distribution manifold with thermally controlled faceplate
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040023461A1 (en) * 2002-07-30 2004-02-05 Micron Technology, Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
CN1802722A (zh) * 2003-05-22 2006-07-12 艾克塞利斯技术公司 等离子体灰化装置和终点检测方法
CN101916715A (zh) * 2004-02-26 2010-12-15 应用材料有限公司 用于前段工艺制造的原地干洗腔

Also Published As

Publication number Publication date
KR102779387B1 (ko) 2025-03-10
KR20230157908A (ko) 2023-11-17
SG10201604054PA (en) 2016-12-29
SG10202102836YA (en) 2021-04-29
JP6912164B2 (ja) 2021-07-28
US10378107B2 (en) 2019-08-13
JP2023018006A (ja) 2023-02-07
KR20220017968A (ko) 2022-02-14
KR20160137404A (ko) 2016-11-30
KR102357417B1 (ko) 2022-01-27
JP7313528B2 (ja) 2023-07-24
US20160340782A1 (en) 2016-11-24
TW201712144A (zh) 2017-04-01
CN106167895A (zh) 2016-11-30
KR102627544B1 (ko) 2024-01-19
JP2016219803A (ja) 2016-12-22
KR102357417B9 (ko) 2025-09-02
JP7181337B2 (ja) 2022-11-30
JP2021106293A (ja) 2021-07-26
TWI713525B (zh) 2020-12-21

Similar Documents

Publication Publication Date Title
CN106167895B (zh) 用于改善流动均匀性的具有面板孔的低体积喷头
KR102753612B1 (ko) 다공성 베플을 갖는 저 볼륨 샤워헤드
CN107768275B (zh) 衬底处理系统和处理在衬底处理系统中的衬底的方法
JP7171165B2 (ja) 膜プロフィール調整のためのシャワーヘッドカーテンガス方法及びシャワーヘッドガスカーテンシステム
JP2017103454A (ja) エッチング処理および蒸着処理のためのコンピュータアドレス可能なプラズマ密度修正
CN111663120A (zh) 通过在整个沉积过程中改变晶片温度来抑制界面反应
TW201509537A (zh) 用於暫態非均勻性之級聯設計噴淋頭
TW201801129A (zh) 將處理控制在晶圓均勻性內之方法及設備
KR20200142587A (ko) 프로세싱 챔버의 세정 프로세스 동안 에지 링 포커싱된 증착
US20240420969A1 (en) Valve manifold for semiconductor processing
JP7677886B2 (ja) インターバル調整パージによるスループットの向上
KR20250099178A (ko) 3 개의 플레넘들을 갖는 샤워헤드
TWI849145B (zh) 基板處理系統用的縮小直徑承載環硬件
KR20210109640A (ko) 다운스트림 플라즈마를 위한 듀얼 이온 필터를 포함하는 기판 프로세싱 시스템
KR20200067218A (ko) 반응기 프로세싱 배치 (batch) 사이즈를 증가시키기 위한 방법들 및 장치들

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant